TOPAZ SEMICONDUCTOR OSE D B scsseas QOOOLO44 4 i T-29-25 $D4200, $D1204 N-CHANNEL ENHANCEMENT-MODE HIGH-VOLTAGE D-iviOS FETs ORDERING INFORMATION SEMICONDUC TOR in Conductive FEATURES APPLICATIONS li Gate Stand-off Voltage, +40V min. lf High-Voltage Level Translators P-Channel Complements Available, SD2204 M High-Voltage Display Drivers @ Low Capacitance (Cogs 1.0pF typ.) High-Voltage Switches M@ Low Leakage @ AC-DC Relays ABSOLUTE MAXIMUM RATINGS (T, = +25C unless otherwise noted) Drain-Source Voltage Maximum Power Dissipation FS) By 10 Te = +100C )3=Tp = +25C SD1201 .............. BD, TO-92 Pkg. O.3W 0.8W Drain-Gate Voltage (Ras = 1M) DD, TO-18 Pkg. 0.4W 1.0W SD1200 oo. ecccec cet ee eee renee eee eeeeeeeenees 450V Linear Derating Factor 21) 10) 400V Junction Junction Gate-Source Voltage .......... cee cee cece eens +40V to Ambient to Case Continuous Drain Current (mW/*C) (mW/C) To = +100C Tg = +26C BD, TO-92 Pkg. 40 6.4 $D1200DD 18mA 28mA DD, TO-18 Pkg. 5.3 8.0 $D1201BD 18mA 30mA Operating Junction and $Di1201DD 20mA 30mA Storage Temperature Range ......... -55C to +150C Peak Drain Current ........... ccc cece eee n ener eee eee 20mA Lead Temperature (1/16" from mounting surface for 0 SEC) ....ccceceeee erences eee renee +260C PIN CONFIGURATIONS CHIP CONFIGURATION DRAIN TO-226AA TO-206AA (TO-92) (TO-18) may 1 1 k GATE ' ol | = i ana SOURCE Of g 8 See Package 5 See Package 1 Dimensions: .026 x .035 = .020 in. Drain is backside contact 3-88 0-88-6 TOPAZ SEMICONDUCTOR OSE D B coase2t Coo1o4s o 5 TOWRA Z SEMICONDUCTOR , T-29-25 $D1200, $D41204 ELECTRICAL CHARACTERISTICS (1, = +25C unless otherwise notd) $D1200 $D1201 # CHARACTERISTIC UNIT TEST CONDITIONS MIN | TYP | MAX] MIN | TYP ; MAX Drain Source = = 7 BVpss Breakdown Voltage 450 | 475 400 | 425 Vv Ip = 10uA, Vag = 0 Gate Forward _ 2 lassr Leakage Current 03 | 10 03 | 10 Vag = 20V - Gate R nA Vos =0 ate Reverse _ 3 lassa Leakage Current -.03 | -10 -.03 | -10 Vas = -20V 4 1.0 | 100 NA | Vpg = 360V r~ 19 = = 5 | Ely Drain-Source OFF 1.0 uA | Vas =0 Tg = +125C 6|/5| Leakage Current 1.0 | 100| nA _| Vog = a20v 7 10 | pA | Vas =0 To = +125C Gate Source = = , 8 Vestn) Threshold Voltage 40 | 30/60] 10/30/50] V_ | Ip = 10uA, Vpg = Ves 9 Iprony ON Drain Current 20 | 35 20 | 35 mA |} Vos = 25\, Vag = 10V | 10 | 1 Drain-Source ON 310 | 700 310 | 500 ohms | Vas = 10V 11 DS(ON) Resistance 520 | 1200 520 | 850 Ip=10mA_ | Te = 125C 12 Os Forward Transconductance ; 10 | 20 10 | 20 mS os aN Ip = 10mA olen, Common-Source *3 | = Siss Input Capacitance 50) 10 5.0 | 10 2 Common-Source = = 1418 | cs Reverse Transfer 08 | 10 os | 10] pr | Yos=25 Vas = 0 f = IMHz Capacitance Common-Source " Coss Output Capacitance 1.0 | 20 1.0 | 20 3-89 TOPAZ SEMICONDUCTOR OSE D Bf coasee. OOOLO4b 2 i VOVRFIAZ SEMICONDUCTOR TosionyON RESISTANCE InjonyON DRAIN CURRENT (mA) ON RESISTANCE Vs GATE-SOURCE VOLTAGE VasGATE-SOURCE VOLTAGE (Volts) ON DRAIN CURRENT GATE-SOURCE VOLTAGE VagGATE-SOURCE VOLTAGE (Volts) CCAPACITANCE(pF) 9FORWARD TRANSCONDUCTANCE(mS) 3 T-29-25 $D1200, SD1204 TYPICAL PERFORMANCE CHARACTERISTICS (T, = +25C unless otherwise specified) FORWARD TRANSCONDUCTANCE ys ON DRAIN CURRENT Vos = 2! f= 1KHz ZL. Oo 5 20 3 wo x fofonyON DRAIN CURRENT(mA) CAPACITANCES DRAIN-SOURCE VOLTAGE VosDRAIN-SOURCE VOLTAGE(Volts) 3-90