MOTOROLA SC (DIODES/OPTO) 2eSE D M8 6367255 Cosotok 7 me fo Orel | NOT RECOMMENDED FOR NEW DESIGNS | ua a i PN Unijunction Transistor 2N3980 ayn a _ a Silicon Annular PN Unijunction Transistor . . designed for military and industrial use in pulse, timing, sensing, and oscitlator circuits. These devices feature: Low Peak Point Current 2 #A max Fast Switching to 1 MHz PN UuTs Low Emitter Reverse Current 10 nA max Passivated Surface for Reliability and Uniformity MAXIMUM RATINGS (Ta = 25C unless otherwise noted.) Rating Symbol Value Unit RMS Power Dissipation, Note 1 Pp 360 mw RMS Emitter Current le 50 mA Peak Pulse Emitter Current, Note 2 ig 1 Amp Emitter Reverse Voltage Veze 30 Volts CASE 22A-01 Interbase Voltage VB2B1 35 Volts STYLE 1 Storage Temperature Range Tstg 65 to +200 c Notas: 1. Derate 2.4 mWPC increase In ambient temperature. Total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry. 2, Capacitance discharge current must fall to 0.37 Amp within 3. ms and PRR = 10 PPS. En ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted.) : Characteristic Symbol Min Typ Max Unit Intrinsic Standoff Ratio n 0.68 - 0.82 _ (Vega1 = 10 V) Note 1 ; Interbase Resistance Rea 4 6 8 k ohms (Vg2n1 = 3 V, Ie = 0} Interbase Resistance Temperature Coofficient aRep 04 - 0.9 SPC (Va2B1 = 3V, le = 0, Ta = 65C to + 100C) Emitter Saturatlon Voltage VeBi (sat) _~ 2.5 3 Volts (Vg2e1 = 10 V, le = 50 mA) Note 2 Modulated Interbase Current IB2(mod) 12 15 _ mA (Vg2e1 = 10 V, lg = 50 mA) Emitter Reverse Current leg2o (Vp2e = 30 V, 191 = 0} _ 6 10 nA (Veze =. 30 V, igq = 9, Ta = 125C) - - 1 pA Peak Point Emitter Current Ip - 0.6 2 BA (Vpop1 = 25 V) {cont.) Notes: 1. Intrinsic standoff ratio, 2, is defined by equation: _ ep West) Ve2a1 Where Vp = Peak Point Emitter Voltage Vp261 = Interbase Voltage Ve = Emitter to Base-One Junction Diode Drop (0.45 V @ 10 pA) 2. Use pulse techniques: PW ~ 300 xs duty cycle < 2% to avoid internal heating due to interbase modulation which may result in erroneous readings. MOTOROLA THYRISTOR DEVICE DATA 3-25 MOTOROLA SC (DIODES/OPTO) 2SE D MM 6367255 0080907 9 a 2N3980 . T-37- al ELECTRICAL CHARACTERISTICS continued (Ta = 25C unless otherwise noted.) ; Characteristic Symbol =| Min Typ Max Unit Valley Point Current ly 1 4 10 mA (Vgon1 = 20 V, Raz = 100 ohms} Note 2 ; Base-One Peak Pulse Voltage Vos ; 6 8 - Volts (Note 1, Figure 3) Maximum Oscillation Frequency f(max) - 400 - kHz (Figure 4) . Notes: 14. Base-One Peak Pulse Voltage ig measured in circuit of Figure 3. 2, Use pulse techniques; PW ~ 300 ys duty cycle. = 2% to avold This specification Ig used to ensura minimum pulse amplitude Internal heating due to intarbas modulation which may result In for applications in ACR firing circuits and other types of pulse erroneous readings, circuita, FIGURE 1 UNIJUNCTION FIGURE 2 STATIC EMITTER TRANSISTOR CHARACTERISTICS CURVES SYMBOL AND (Exaggeratad to Show Details) NOMENCLATURE Ve NEGATIVE tee CUTOFF ee ee SATURATION _ REGION REGION vp 7 SPEAK POINT lg EMITTER TO wore Bo BASE-1 E CHARACTERISTIC VALLEY Vest POINT 5) Ve2e4 (sat) Pt to Yosser t Vy 7 | Ve a | | tga=0 \ Lie | Ip Iv . | a leo o__4-____0 FIGURE 3 -Vog1 FIGURE 4 -~ f(max) MAXIMUM TEST CIRCUIT FREQUENCY:TEST CIRCUIT {Typical Relaxation Oscillator) M +20 V A AA. a et oe 0.1 HE] = toot wel Rel $FREQUENCY 209. | COUNTER O = 3-26