MMBTA64
PNP Darlington
Transistor
Features
Maximum Ratings*
Symbol Rating Rating Unit
VCES Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 10 V
IC Collector Current, Continuous 1.2 A
TJ Operating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
PD Total Device Dissipation*
Derate above 25OC 350
2.8 mW
mW/
OC
RJA Thermal Resistance, Junction to Ambient 357 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CES Collector-Emitter Breakdown Voltage
(IC=100uAdc, IB=0) 30 --- Vdc
ICBO Collector Cutoff Current
(VCB=30Vdc, IE=0) --- 100 nAdc
IEBO Emitter Cutoff Current
(VEB=10Vdc, IC=0) --- 100 nAdc
ON CHARACTERISTICS
**
hFE DC Current Gain
(VCE=5.0Vdc, IC=10mAdc)
(VCE=5.0Vdc, IC=100mA) 10000
20000 ---
--- ---
VCE(sat) Collector-Emitter Saturation Voltage
(IC=100mAdc, IB=0.1mAdc) --- 1.5 Vdc
VBE(sat) Base-Emitter On Voltage
(IC=100mAdc, VCE=5.0Vdc) --- 2.0 Vdc
fT Current-Gain—Bandwidth Product
(IC=10mAdc, VCE=5.0Vdc, f=100MHz) 125 --- MHz
* These ratings are limiting values above which the serviceability of any
semiconductor device may be impaired.
** Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
Note: 1) These rating are based on a maximum junction temperature of 150 degrees
C.
2) These are steady state limits. The factory should be consulted on
applications involving pulsed or low duty cycle operations.
• This device is designed for applications requiring extremely high
current gain at currents to 800mA.
• Marking Code: MMBTA64=2V
2 V
C
B E
Pin Configuration
Top View SOT-23
Suggested Solder
Pad Layout
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .110 .120 2.80 3.04
B .083 .098 2.10 2.64
C .047 .055 1.20 1.40
D .035 .041 .89 1.03
E .070 .081 1.78 2.05
F .018 .024 .45 .60
G .0005 .0039 .013 .100
H .035 .044 .89 1.12
J .003 .007 .085 .180
K .015 .020 .37 .51
A
B
C
D
E
F
G
H
J
.079
2.000
inches
mm
.031
.800
.035
.900
.037
.950
.037
.950
www.mccsemi.com
Revision: 2 2003/04/30
omponents
20736 Marilla Street Chatsworth
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MCC
Collector- Em itter Saturation
Voltage vs Collector Current
P61
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
I - COL LEC TOR CURRENT (A)
V - COLLECTOR EMITTER VOLTAG E (V)
C
CESAT
ββ = 10 00
25 °C
- 40 ºC
125 ºC
Typi cal Pul sed Current Gai n
vs Collector Curr ent
P61
0.01 0.1 1
0
10
20
30
40
50
I - COLL EC TOR CU RRENT (A)
h - TYPICAL PULSED CURR ENT GAIN (K)
C
FE
125 °C
25 °C
- 40 °C
V = 5V
CE
B ase-Em i tte r Sa tu ra tion
Voltag e vs Co l lec tor Cu rren t
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - COLL ECTOR CURRENT (A)
V - BASE EMITTER VO LTAGE (V)
C
BESAT
25 °C
- 40 ºC
125 ºC
ββ = 1000
Base Emitter ON Vol tage vs
Co llector Current
P61
0.001 0.01 0.1 1
0
0.4
0.8
1.2
1.6
2
I - COLLE CTO R CUR REN T (A)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 ºC
125 ºC
Collector-Cut off Current
vs. Ambient T emperature
25 50 75 100 125
0.01
0.1
1
10
100
T - AMBIEN T TEMPERATURE ( C)
I - CO LLECTOR CURRENT (nA)
A
CBO
º
V = 15V
CB
I nput an d Output Capacitance
vs Reverse Bias Voltage
0.1 1 10 100
0
4
8
12
16
R EVER SE VOL TAG E (V)
CAPAC ITANCE (pF )
C
f = 1. 0 M Hz
ib
Cob
MCC
MMBTA64
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
0.25
0.5
0.75
1
TEMP ERATURE ( C)
P - P OWER DIS SIPATI ON (W)
D
o
SOT-23
www.mccsemi.com
Revision: 2 2003/04/30
