MICR SEMICONDUCTOR, INC. UALITY High Voltage Full Wave Bridge Rectifiers 1.5, 2, 4, 6, 8, and 10 KV Vary Ratings Fast Recovery Platinum Doped High Purity Epoxy Encapsulation Avalanche Grade Junctions LTR. INCHES MILLIMETERS A 1.85 46,99 A a Fi B 925 23,50 - c 187 Dia. 4.75 Dia. 8 ~| D 625 Dia. 15,88 Dia. } } NEG. E "189 4'80 i J | . aC F 75 19,05 7 . G 35 8,89 rd H 1032 813 A r | .250 6, 35 a | t 7? Inch Tolerances + .005 - AC POS. L XC c H c| | oO Terminals are .25 35mm Faston or Equivalent MAXIMUM RATINGS (At T, = 25C unless otherwise noted) RATINGS SYMBOL H1645 | H1646 | H1647 | H1648 | Ht649 | H1650 UNITS Repetitive Peak Reverse Voltage Vawm 1.50 2.00 4.00 6.00 8.00 410.00 kv RMS Reverse Voltage Vatams) 1.0 1.4 28 42 5.6 7.0 kV Average Forward Current @ T, = 50C (Fig. 1) lo -90 65 45 -33 30 26 Amps Peak Surge Current, 2 cycle at 60 Hz (Non-Rep) lesne 35.00 30.00 25.00 20.00 20.00 15.00 Amps Storage Temperature Range Tst 30 to + 150 C Ambient Operating Temperature Range Ta 30 to + 125 C ELECTRICAL CHARACTERISTICS (At T, = 25C unless otherwise noted) CHARACTERISTICS SYMBOL | H1645 | H1646 | H1647 | H1648 | Hi649 | H1650 UNITS Maximum instantaneous Forward Voltage Drop (per diode) @ |e = 10mA Vem 4.00 7,00 10.00 16.00 16.00 20.00 v Maximum Reverse Current at Rated Varm lam 1 pA Maximum Reverse Recovery Time at |; = 50mA, Ip = 100mA, t 250 ns & laa = 25mA {Fig 2) i 175 TO TEXTRONIX 455 49n SCOPE OR EQutv, w/S0n LOAD \42W ALL RESISTORS ARE CARBON COMPOSITION SWITCHING 100MA - REVERSE RECOVERY CURRENT T o H16045 = 900 | me m 800 | | H1646 Ee 5 9 700 4 H1647 we C oe 600 H1648 1-3) Sz 500 - H1649 5 L YH11650 Aa 400 7- Bg <4 Ew 300 {2 o> me ee B34 200 +- RS 3 m SSO Be 100 +. PSN < 0 20 50 75 100 125 150 AMBIENT TEMPERATURE Ta, (C) FIGURE 1 RECOVERY WAVE FORM FORWARD CONDUCTION soma REVERSE RECOVERY TEST CIRCUIT Tra To Hp2i68 S09 {HF 350 + lp EQuiv. i ew Sw . O-SOmA = Hie 390n CURRENT v = 20 REGULATED IN PARALLEL - - 9ppe worn TIME > / 25mA FIGURE 2 176