Certificate TH97/10561QM 1N5614 - 1N5622 Certificate TW00/17276EM GLASS PASSIVATED JUNCTION SILICON RECTIFIERS PRV : 200 - 1000 Volts Io : 1.0 Ampere DO - 41 FEATURES : * * * * * * Glass passivated chip High forward surge current capability High reliability Low reverse current Low forward voltage drop Pb / RoHS Free 1.00 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) 0.205 (5.2) 0.161 (4.1) MECHANICAL DATA : 1.00 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) * Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.34 gram Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 Maximum Working Peak Reverse Voltage Minimum Breakdown Voltage @ 50 A Maximum Average Forward Current at Ta = 55 C at Ta = 100 C UNIT VRWM 200 400 600 800 1000 V VBR(MIN) 220 440 660 880 1100 V IF(AV) 1.0 0.75 A Peak Forward Surge Current IFSM 30 A Minimum Forward Voltage at I F = 3.0 A VF(MIN) 0.8 V Maximum Forward Voltage at I F = 3.0A VF(MAX) 1.3 V at VRWM , Ta = 25 C IR 0.5 at VRWM , Ta = 100 C IR(H) 25 Trr 2.0 s RJL 38 C/W TJ, TSTG -65 to +175 C (Ta = 100 C,f = 60 Hz, I F(AV) = 750 mA for ten 8.3 ms surges @ 1 minute intervals) Maximum Reverse Current Maximum Reverse Recovery Time ( Note 1 ) Thermal Resistance , Junction to Lead (Note 2) Operating Junction and Storage Temperature Range A Notes : (1) Reverse Recovery Test Conditions : I F = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A. (2) At 3/8"(10 mm) lead length form body. Page 1 of 1 Rev. 02 : July 24, 2006