1N5614 - 1N5622 GLASS PASSIVATED JUNCTION
SILICON RECTIFIERS
PRV : 200 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High forward surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL 1N5614 1N5616 1N5618 1N5620 1N5622 UNIT
Maximum Working Peak Reverse Voltage VRWM 200 400 600 800 1000 V
Minimum Breakdown Voltage @ 50 μAVBR(MIN) 220 440 660 880 1100 V
Maximum Average Forward Current at Ta = 55 °C 1.0
at Ta = 100 °C 0.75
Peak Forward Surge Current
(Ta = 100 °C,f = 60 Hz, IF(AV) = 750 mA for ten 8.3 ms
surges @ 1 minute intervals)
Minimum Forward Voltage at I F = 3.0 A VF(MIN) 0.8 V
Maximum Forward Voltage at IF = 3.0A VF(MAX) 1.3 V
Maximum Reverse Current at VRWM, Ta = 25 °C IR0.5
at VRWM, Ta = 100 °C IR(H) 25
Maximum Reverse Recovery Time ( Note 1 ) Trr 2.0 μs
Thermal Resistance , Junction to Lead (Note 2) RӨJL 38 °C/W
Operating Junction and Storage Temperature Range TJ, TSTG -65 to +175 °C
Notes :
(1) Reverse Recovery Test Conditions : I
F = 0.5 A, IRM = 1.0 A, IR(REC) = 0.25 A.
(2) At 3/8"(10 mm) lead length form body.
Page 1 of 1 Rev. 02 : July 24, 2006
μA
A
RATING
IFSM 30
IF(AV) A
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.161 (4.1)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
Certificate TH97/10561QM Certificate TW00/17276EM
