wa SBL530SBL560 VISHAY Vishay Lite-On Power Semiconductor 5.0A Schottky Barrier Rectifiers Features @ Schottky barrier chip @ Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forward voltage drop @ Foruse in low voltage, high frequency inverters, free wheeling, and polarity protection application 94 9537 e Plastic material has UL flammability classification 94V0 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage SBL530 Vrru 30 Vv =Working peak reverse voltage SBL535 =VawM 35 Vv =DC Blocking voltage SBL540 =VrR 40 V SBL545 45 Vv SBL550 50 Vv SBL560 60 Vv Peak forward surge current lesm 175 A Average forward current Tce=95C IFay 5 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics Tj = 25C Forward voltage IrF=5A, Tc=25C | SBL530-545 Ve 0.55 Vv SBL550560 Ve 0.7 Vv Reverse current Tce=25C IR 0.5 | mA To=100C IR 33 mA Diode capacitance VrR=4V, f=1MHz Cp 500 pF Thermal resistance T_=const. RthJA 11 KW junction to ambient Rev. A2, 24-Jun-98 1 (4) SBL530-SBL560 Vay Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) 5 \ leay Average Forward Current (A) bw LL Cp Diode Capacitance ( pF ) 0 100 0 50 100 150 0.1 1.0 10 100 15308 Tamb Ambient Temperature ( C ) 15311 Vr Reverse Voltage ( V ) Figure 1. Max. Average Forward Current vs. Figure 4. Typ. Diode Capacitance vs. Reverse Voltage Ambient Temperature 100 100 ~ SBL530 SBL545 x << E ~ ~ 10 o 10 = 6 3 z 1.0 g a = SBL550 SBL560 g 10 cc | I 0.1 = T; = 25C = Pulse Width = 300 ps 2% Duty Cycle 0.1 0.01 0.2 0.4 0.6 0.8 0 40 80 120 15309 Ve Forward Voltage ( V ) 15312 Percent of Rated Peak Reverse Voltage (%) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage x 300 TTT Trin T T TTT 8.3 ms Single Half-Sine-Wave =e JEDEC method 250 5 oO 8, 200 a o iso TC 5 N\ = IN o N, iL 100 _ s rw a 50 I PT = Pd wn a 0 1 10 100 15310 Number of Cycles at 60 Hz Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles 2 (4) Rev. A2, 24-Jun-98 , SBL530-SBL560 VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm L M B TO-220AC Dim Min Max , AT 14.22 15.88 : lan _ Bl 9.65 10.67 | | Cc] 254 3.43 . Lo a, 5.84 a KY) | Ee; - | 62 co c | i270 kB a) 1) 051 11h | K | 93.53 01.09 us L | 356 1.83 ug I M (1h 140 N | 0.30 0.64 P| 2.03 7.9) LU RT 4.83 533 ALL Dimensions in mm N J P R PIN | + QO, 4. acorag fo ON t+(_) p 14469 PIN 2 - Q>_Ssiase Case positive Case: Molded Plastic Polarity: See Diagram Approx. Weight: 2.3 grams Mounting Position: Any Marking: Tupe Number Rev. A2, 24-Jun-98 3 (4) SBL530-SBL560 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98