GLS29EE512-70-4C-NHE - Greenliant Systems

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Features

• Single Voltage Read and Write Operations

- 4.5-5.5V for GLS29EE512

• Superior Reliability

- Endurance: 100,000 Cycles (typical)

- Greater than 100 years Data Retention

• Low Power Consum p tion

- Active Current: 20 mA (typical)

- Standby Current: 10 µA (typical)

• Fast Page-Write Operation

- 128 Bytes per Page, 512 Pages

- Page-Write Cycle: 5 ms (typical)

- Complete Memory Rewrite: 2.5 sec (typical)

- Effective Byte-Write Cycle Time: 39 µS (typical)

• Fast Read Access Time

- 4.5-5.5V operation: 70 ns

• Latched A d d ress and Data

• Automatic Write Timing

- Internal VPP Generation

• End of Write Detection

- Toggle Bit

- Data# Polling

• Hardware and Software Data Protection

• Produc t Identificati o n can be accessed via

Software Operation

• TLL I/O Compatibi lity

• JEDEC St an da rd

- Flash EEPRO M Pinou ts and Command Sets

• Packages Availabl e

- 32-lead PLCC

- 32-lead TSOP (8mm x 20mm)

• All Devices are RoHS Compliant

Product Description

GLS29EE512 Small-Sector Flash™ is a 64K x8

CMOS, Pa ge -Write EEPROM manufactured with high-

performance SuperFlash technology. The split-gate

cell design and thick-oxide tunneling injector attain

better reliability and manufacturability compared with

alternate approaches. GLS29EE512 writes with a

single power supply. Internal Erase/Program is

transparent to the user. GLS29EE512 conforms to

JEDEC standard pin assignments for byte-wide

memories.

Featuring high performance Page-Write,

GLS29EE512 provides a typical Byte-W rite time of 39

μsec. The entire memory, i.e., 64 KByte, can be

written page-by-page in as little as 2.5 seconds , when

using interface features such as Toggle Bit or Data#

Polling to indicate the completion of a W rite cycle. To

protect against inadvertent write, GLS29EE512 have

on-chip hardware and Software Data Protection

schemes. Designed, manufactured and tested for a

wide spectrum of applications, GLS29EE512 is

offered with a guaranteed Page-Write endurance of

10,000 cycles. Data retention is rated at greater than

100 years.

GLS29EE512 is suited for applications that require

convenient and economical updating of program,

configuration, or data memory. For all system

applications, GLS29EE512 significantly improves

performance and reliability, while lowering power

consumption. GLS29EE512 improves flexibility while

lowering t he cost f or progra m, data, and c onfiguration

storage applications.

To meet high density, surface mount requirements,

GLS29E E512 is off ered in 32-lead PLCC and 32-lead

TSOP packages. See Figures 1 and 2 for pin

assignments.

Device Operation

The Greenliant Page-Write EEPROM offers in-circuit

electrical write capability. GLS29EE512 does not

require separate Erase and Program operations. The

internally timed Write cycle executes both erase and

program transparently to the user. GLS29EE512 has

industry standard optional Software Data Protection,

which Greenliant recommends always to be enabled.

GLS29EE512 is compatible with industry standard

EEPROM pinout s and functionality.

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Read

The Read o perations of GLS29EE512 is controlled b y

CE# and OE#, both have to be low for the system to

obtain data from the outputs. CE# is used for device

selection. When CE# is high, the chip is deselected

and only standby power is consumed. OE# is the

output contr o l a nd is us ed t o gat e data fr om the out put

pins. The data bus is in high impedance state when

either CE# or OE# is high. Refer to the Read Cycle

Timing diagram for further details (Figure 3).

Write

The Page-Write to GLS29EE512 should always use

the JEDEC Standard Software Data Protection (SDP)

three-byte command sequence. GLS29EE512

contains the optional JEDEC approved Software Data

Protection scheme. Greenliant recommends that SDP

always be enabled, thus, the description of the Write

operations will be given using the SDP enabled

format. The three-byte SDP Enable and SDP Write

commands are identical; therefore, any time a SDP

Write command is issued, Software Data

Protection is automatically assured. The first time

the three-byte SDP command is given, the device

becomes SDP enabled. Subsequent issuance of the

same command bypasses the data protection for the

page being written. At the end of the desired Page-

Write, the entire device remains protected. For

additional descriptions, please see the application

note, Protecting Against Unintentional Writes When

Using Sing le Pow er Supply Flash Memories.

The Write operation consists of three steps. Step 1 is

the three-byte load sequence for Software Data

Protection. Step 2 is the byte-load cycle to a page

buffer of GLS29EE512. Steps 1 and 2 use the same

timing for both operations. Step 3 is an internally

controlled Write cycle for w ritin g th e da ta loa ded in the

page buffer into the memory array for nonvolatile

storage.

During both the SDP three-byte load sequence and

the byte-load cycle, the addresses are latched by the

falling edge of either CE# or WE#, whichever occurs

last. The data is latched by the rising edge of either

CE# or WE#, whichever occurs first. The internal

Write cycle is initiated by the TBLCO timer after the

rising edge of WE# or CE#, whichever occurs first.

The Write cycle, once initiated, will continue to

completi on, typically within 5 m s. See Figures 4 and 5

for WE# and CE# controlled Page-Write cycle timing

diagrams and Figures 15 and 17 for flowcharts.

The Write operation has three functional cycles: the

Software Data Protection load sequence, the page-

load cycle, and the internal Write cycle. The Software

Data Protection consists of a specific three-byte load

sequence that allows wr iting to the se lected page and

will leave GLS29EE512 protected at the end of the

Page-W rite. T he page-load c ycle c onsists of loading 1

to 128 B ytes of data into th e page buff er. The internal

Write cycle consists of the TBLCO time-out and the

write timer operation. During the Write operation, the

only valid reads are Data# Polling and Toggle Bit.

The Page-Write operation allows the loading of up to

128 Bytes of data into the page buffer of

GLS29E E512 before the initiation of the internal W rite

cycle. During the internal Write cycle, all the data in

the page buffer is written simultaneously into the

memory array. Hence, the Page-Write feature of

GLS29EE512 allows the entire memory to be written

in as little as 2.5 seconds. During the internal Write

cycle, the host is free to perform additional tasks, such

as to fetch data from other locations in the system to

set up the write to the next page. In each Page-Write

operation, all the bytes that are loaded into the page

buffer must have the same page address, i.e. A7

through A16. Any byte not loaded with user data will

be written to FFH.

See Figures 4 and 5 for the Page-Write cycle timing

diagrams. If after the completion of the three-byte

SDP load sequence or the initial byte-load cycle, the

host loads a second b yte into the pag e buffer within a

byte-load cycle time (TBLC) of 100 μs, GLS29EE512

will stay in the page-load cycle. Additional bytes are

then loaded consecutively. The page-load cycle will

be terminated if no additional byte is loaded into the

page buffer within 200 μs (TBLCO) from the last byte-

load cycle, i.e., no subsequent WE# or CE# high-to-

low transition af ter the last rising edg e of WE# or C E#.

Data in the page buffer can be changed by a

subseque nt byte-load c ycle. The page-load p er io d can

continue indefinitely, as long as the host continues to

load the device within the byte-load cycle time of 100

μs. The page to be loaded is determined by the page

address of the last b yte loaded.

Software Chip-Erase

GLS29EE512 provides a Chip-Erase oper ation, which

allows the user to simultaneously clear the entire

memory arr ay to the “ 1” state. T his is useful when the

entire device must be quickly erased.

The Software Chip-Erase operation is initiated by

using a specific six-byte load sequenc e. After the load

sequence, the device enters into an internally timed

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

cycle similar to the Write cycle. During the Erase

operatio n, the only valid re ad is Toggle Bit. See T able

4 for the load sequence, Figure 9 for timing diagram,

and Figure 18 for the flowchart.

Write Operation Status Detection

GLS29EE512 provides two software means to detect

the completion of a Write cycle, in order to optimize

the system Write cycle time. The software detection

includes two status bits: Data# Polling (DQ7) and

Toggle Bit (DQ6). The end of write detection mode is

enabled af ter th e r is ing WE# or CE# whic hever occ urs

first, which initiates the internal Write cycle.

The actual completion of the nonvolatile write is

asynchronous with the system; therefore, either a

Data# P olling or T oggle Bit read m ay be sim ultane ous

with the completion of the Write cycle. If this occurs,

the s ystem ma y possib ly get an erroneous result, i.e.,

valid data may appear to conflict with either DQ7 or

DQ6. In order to prevent spurious rejection, if an

erroneous result occurs, the software routine should

include a loop to read the accessed location an

additional two (2) times. If both reads are valid, then

the device has completed the Write cycle, otherwise

the rejection is valid.

Data# Polling (DQ7)

When GLS29EE512 is in the internal Write cycle, any

attem pt to read DQ7 of the last byte loaded during t he

byte-load cycle wi ll rec e ive the c omplement of the tr ue

data. Once the Write cycle is completed, DQ7 will

show true data. No te that even though DQ7 may have

valid data immediately following the completion of an

internal Write operation, the remaining data outputs

may still be invalid: valid data on the entire data bus

will appear in subsequent successive Read cycles

after an interval of 1 μs. See Figure 6 for Data#

Polling timing diagram and Figure 16 for a flowchart.

Toggle Bit (DQ6)

During the internal Write cycle, any consecutive

attempts to read DQ6 will produce alternating ‘0’s and

‘1’s, i.e., toggling between 0 and 1. When the Write

cycle is completed, the toggling will stop. The device

is then ready for the next operation. See Figure 7 for

Toggle Bit timing diagram and Figure 15 for a

flowchart. The initial read of the Toggle Bit will

typicall y be a “1”.

Data Protection

GLS29EE512 provide both hardware and software

features to protect nonvolatile data from inadvertent

writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less

than 5 ns will not initiate a Write cycle.

VDD Power Up/Dow n Detec tion : The W r ite operation is

inhibited when VDD is less than 2.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or

WE# high will inhibit the Write operation. This

prevents inadv ertent writes during pow er-up or po wer-

down.

Software Data Protection (SDP)

GLS29EE512 provides the JEDEC approved optional

Software Data Protection scheme for all data

alteration operations, i.e., Write and Chip-Erase. W ith

this scheme, any Write operation requires the

inclusion of a series of three byte-load operations to

precede the data loading operation. The three-byte

load sequence is used to initiate the Write cycle,

providing optimal protection from inadvertent Write

operations, e.g., during the system power-up or

power-down. The GLS29EE512 is shipped with the

Software Data Protection disabled.

The software protection scheme can be enabled by

applying a t hree-byte sequence to the d ev ice, during a

page-load cycle (Figures 4 and 5). The device will

then be automatically set into the data protect mode.

Any subsequent Write operation will require the

preceding three-byte sequence. See Table 4 for the

specific software command codes and Figures 4 and

5 for the timing diagrams. To set the device into the

unprotected mode, a six-byte sequence is required.

See Table 4 for the specific codes and Figure 8 for the

timing diagram. If a Write is attempted while SDP is

enabled the device will be in a non-accessible state

for ~ 300 μs. Greenliant recommends Software Data

Protection always be enabled. See Figure 16 for

flowcharts.

GLS29EE512 Software Data Protection is a global

comm and, protect ing (or unpr otect ing) al l pages i n the

entire memory array once enabled (or disabled).

Therefore, using SDP for a single Page-Write will

enable SDP for the entire array. Single pages by

themselves cannot be SDP enabled or disabled,

although the p age a ddr es sed duri ng th e SD P wr ite w ill

be written.

Single power supply reprogrammable nonvolatile

memories may be unintentionally altered. Greenliant

strongly recommends that Software Data Protection

(SDP) always be enabled. GLS29EE512 should be

programmed using the SDP command sequence.

Greenliant recommends the SDP Disable Command

Sequence not be issued to the device prior to writing.

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Please refer to the following application note for more

information on using SDP, Protecting Against

Unintentional Writes When Using Single Power

Supply Flash Memories.

Product Identification

The Product Identification mode identifies the device

as GLS29EE512 and manufacturer as Greenliant.

This mode is accessed via software. For details, see

Table 4, Fi gure 10 f or th e sof tware ID en try, and Read

timing diagram and Figure 17 for the ID entry

command sequence flowchart.

Table 1: Product Identification

Address Data

Manufacturer’s ID 0000H BFH 0000H BFH

Device ID

GLS29EE512

0001H 5DH

Product Identification Mode Exit

In order to return to the standard Read mode, the

Software Product Identification mode must be exited.

Exiting is accomplished by issuing the Software ID

Exit (reset) operation, which returns the device to the

Read operation. The Reset operation may also be

used to reset the device to the Read mode after an

inadvertent transient condition that apparently causes

the device to behave abnormally, e.g., not read

correctly. See Table 4 for software command codes,

Figure 11 for timing waveform, and Figure 17 for a

flowchart.

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 1: Pin Assignment for 3 2-Lead PLCC

Figure 2: Pin Assignment for 32-Lead TSOP

Table 2: Pin Descri ption

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Table 3: Operation Modes Sele ction

1. X can be VIL or VIH, but no other value.

2. Device ID = 5DH for GLS29EE512

Table 4: Software Command Sequence

1. Address format A14-A0 (Hex), Address A15 can be VIL or VIH,, but no other va lu e

2. Page-Write consists of loading up to 128 Bytes (A6-A0)

3. The software Chip-Erase function is not supported by the industrial temperature part.

Please contact Greenliant if you require this function for an industrial temperature part.

4. The device does not remain in Software Product ID mode if powered down.

5. With A14-A1 = 0; Greenliant Manufacturer’s ID = BFH, is read with A0 = 0,

GLS29EE512 Device ID = 5DH, is read with A0 = 1

6. Alternate six-b yte Soft ware Pr oduct ID Command Code

Note: This product supports both the JEDEC standard three-byte command code sequence and Greenliant’s

original six-byte command code sequence. For new designs, Greenliant recommends that the three-byte

command code sequence be used.

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this

datasheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 14.0V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Through Hole Lead Soldering Temperature (10 Seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300°C

Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA

1. All packages are 260°C capable in both non-Pb and with-P b solder vers ion s.

2. Outputs shorted for no more than one second. No more than one output shorted at a time.

Operating Range for GLS29EE512

AC Condi ti ons of Test

Table 5: DC Operating Characteristics VDD = 4.5-5.5V for G LS29E E512

See Figures 12 and 13

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Table 6: Reliability Characteristics

1. This parameter is measured only for initial qualification and after a design or process change that

could affect this parameter.

AC Characteristics

Table 7: Read Cycle Timing Parameters for GLS29EE512

1. This parameter is measured only for initial qualification and after a design or process change that

could affect this parameter.

Table 8: Page-Write Cycle Timing Parameters

1. This parameter is measured only for initial qualification and after a design or process change that

could affect this parameter.

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 3: Rea d Cycle Timing Dia gr am

Figure 4: WE# Controlled Page-Write Cycle Timing Diagram

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 5: CE# Controlle d Page-Write Cycle Timing Diagram

Figure 6: Data# Pol ling Timing Dia gr am

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 7: Toggle Bi t Timing Diagram

Figure 8: Software Data Protect Disable Timing Diagram

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 9: Softwa re Chip-Erase Timing Diagram

Figure 10: Softw are ID Entry and Read

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 11: Software ID Exit and Reset

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 12: AC I nput/Output Refere nce Waveforms

Figure 13: Test Load Example

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 14: Write A lgorithm

See Figure 16

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 15: Wait Options

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 16: Softw are Data Pr otection Flowcharts

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 17: Softw are Product Comm and Flowcharts

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Figure 18: Software Chip-Erase Command Codes

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Product Ordering Information

GLS 29 EE 512 - 70 - 4C - NH - E

XX XX XXXX - XXX - XX -

XX -

Environmental Attribute

E = non-Pb solder (RoHS Compliant)

Package Modifier

H = 32 leads

Package Type

E = TSOP (type 1, die up, 8mm x 20mm)

N = PLCC

Operation Temperature

C = Commercial: 0°C to +70°C

I = Industrial: -40°C to +85°C

Minimum Endurance

4 = 10,000 cycle

Read Access Speed

70 = 70 ns

Device Density

512 = 512 Kbit

Function

E = Page-Write

Voltage

E = 4.5V to 5.5V

Product Series

29 = Page-Writ e Flash

Valid Combinations

Valid prod uct combinati ons are thos e that are in the mass production or will be in th e mass produc tion. Consult

your Gr een liant s al es repre sentative t o c o nf irm ava i lab ilit y of t he v al id combinati o ns an d to det ermine a vai labil ity

of new product combinations.

GLS29EE512-70-4C-NHE GLS29EE512-70-4C-EHE

GLS29EE512-70-4I-NHE GLS29EE512-70-4I-EHE

Note: The software Chip-Erase function is not supported by the industrial temperature part.

Please contact Greenliant if this function is required in an industrial temperature part.

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Package Diagrams

32-Lead Plastic Lead Chip Carrier (P LCC)

Greenliant Package Code: NH

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

32-Lead Thin Small Outline Package (TSOP) 8mm x 20mm

Greenliant Package Code: EH

Datasheet 11.000

July 2018

These specificat i ons are subject to change without notice. 07/26/2018

GLS29EE512 Small-Sec tor Flash™

512 Kbit (64K x8) Page-Write EEPROM

GLS FS0019 Rev. 01

Table 9: Revision History

Number

Description

Date

06.000

2002 Data Book

May 2002

07.000

• WH package no longer offere d

• Removed the SST29EE512 90 ns Read Access Time

• Removed the SST29LE512 200 ns Read Access Time

• Removed the SST29VE512 250 ns Read Access Time

•

Clarified IDD Write to be Program and Erase in Table 6 on page 11

March 2003

08.000

• 2004 Data Book

• Added non-Pb MPNs and removed footnote (See page 22)

November 2003

09.000

• Removed 2.7V and 3V devices, and associated MPNs; refer to EOL Product

Data Sheet S71060(01)

• Added RoHS complianc e information on page 1 and in the “Product Ordering

Information” on page 22

• Clarified the Solder Temperature Profile under “Absolute Maximum Stress

Ratings” on page 9

September 2005

10.000

Transferred from SST to Greenliant

May 2010

11.000

PH package no longer offered

July 2018

Greenliant and the Greenliant logo are registered trademarks, and Small-Sector Flash is a trademark of

Greenliant. All other tradem arks and registered trademarks are the property of thei r respective owners.

Specifications are subject to change without notice. Memory sizes denote raw storage capacity; actual usable

capacity may be less.

Greenliant makes no warranty for the use of its products other than those expressly contained in the Greenliant

Terms and Conditions of Sale.