N-Channel PowerTrench(R) MOSFET General Description 20 V, 9 A, 18 m Features Max rDS(on) = 18 m at VGS = 4.5 V, ID = 9 A This Single N-Channel MOSFET has been designed using ON Semiconductor's advanced Power Trench process to optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET Max rDS(on) = 24 m at VGS = 2.5 V, ID = 7.5 A leadframe. Max rDS(on) = 32 m at VGS = 1.8 V, ID = 7 A Applications Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6 Thin Li-lon Battery Pack Free from halogenated compounds and antimony oxides Baseband Switch HBM ESD protection level >2.5 kV (Note3) Load Switch DC-DC Conversion RoHS Compliant G D Pin 1 D S D D D D G S S D D BOTTOM TOP MicroFET 1.6x1.6 Thin MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 C (Note 1a) -Pulsed PD TJ, TSTG Ratings 20 Units V 12 V 9 A 40 Power Dissipation for Single Operation TA = 25 C (Note 1a) 2.1 Power Dissipation for Single Operation TA = 25 C (Note 1b) 0.7 Operating and Storage Junction Temperature Range W -55 to +150 C Thermal Characteristics RJA Thermal Resistance, Junction to Ambient (Note 1a) 70 RJA Thermal Resistance, Junction to Ambient (Note 1b) 190 C/W Package Marking and Ordering Information Device Marking 8T Device FDME820NZT (c)2012 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Package MicroFET 1.6x1.6 Thin Reel Size 7 '' Tape Width 8 mm Quantity 5000 units Publication Order Number: FDME820NZT/D FDME820NZT N-Channel PowerTrench(R) MOSFET FDME820NZT Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 A, VGS = 0 V BVDSS TJ Breakdown Voltage Temperature Coefficient ID = 250 A, referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 A IGSS Gate to Source Leakage Current VGS = 12 V, VDS = 0 V 10 A 1.0 V 20 V 20 mV/C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 A VGS(th) TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 A, referenced to 25 C -3 VGS = 4.5 V, ID = 9 A 14 18 VGS = 2.5 V, ID = 7.5 A 17 24 VGS = 1.8 V, ID = 7 A 26 32 VGS = 4.5 V, ID = 9 A , TJ = 125 C 19 24 VDS = 10 V, VGS = 0 V, f = 1 MHz 865 pF 203 pF 190 pF 1.0 rDS(on) Drain to Source On Resistance 0.5 0.8 mV/C m Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Switching Characteristics td(on) Turn-On Delay Time 9 ns tr Rise Time 5 ns td(off) Turn-Off Delay Time tf Fall Time VDD = 10 V, ID = 4 A VGS = 4.5 V, RGEN = 2 19 ns 5 ns Qg Total Gate Charge VDD = 4.2 V, ID = 3 A, VGS = 4.3 V 8.0 nC Qg Total Gate Charge VDD = 4.2 V, ID = 3 A, VGS = 4.5 V 8.5 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain "Miller" Charge VDD = 10 V, ID = 9 A 1.4 nC 3.2 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 1.6 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 9 A (Note 2) 0.8 1.2 IF = 9 A, di/dt = 100 A/us V V 18 ns 4 nC Notes: 1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by the user's board design. a. 70 C/W when mounted on a 1 in2 pad of 2 oz copper. b. 190 C/W when mounted on a minimum pad of 2 oz copper. SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. www.onsemi.com 2 FDME820NZT N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25 C unless otherwise noted 40 5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 4.5 V VGS = 3 V VGS = 2.5 V 30 VGS = 1.8 V 20 VGS = 2 V PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 10 VGS = 1.5 V 0 0 0.5 1.0 1.5 2.0 4 VGS = 1.8 V VGS = 2 V 3 2 VGS = 3 V 0 2.5 Figure 1. On Region Characteristics VGS = 4.5 V 0 10 20 ID, DRAIN CURRENT (A) 40 80 ID = 9 A VGS = 4.5 V rDS(on), DRAIN TO 1.4 1.2 1.0 0.8 SOURCE ON-RESISTANCE (m) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.6 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 60 ID = 9 A 40 TJ = 125 oC 20 TJ = 25 oC -50 -25 0 25 50 75 0 0.9 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.8 2.7 3.6 4.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 1000 40 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) VGS = 2.5 V 1 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.6 -75 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX VGS = 1.5 V VDS = 5 V 30 20 TJ = 150 oC TJ = 25 oC 10 TJ = -55 oC 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS, GATE TO SOURCE VOLTAGE (V) VGS = 0 V 100 TJ = 150 oC 10 TJ = 25 oC 1 0.1 TJ = -55 oC 0.01 0.001 0 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 3 1.2 FDME820NZT N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2000 ID = 9 A 3.6 1000 VDD = 8 V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 4.5 2.7 VDD = 10 V 1.8 VDD = 12 V Ciss Coss 0.9 0.0 f = 1 MHz VGS = 0 V 0 3 6 9 100 0.1 12 1 Figure 7. Gate Charge Characteristics 20 Figure 8. Capacitance vs Drain to Source Voltage -1 20 10 Ig, GATE LEAKAGE CURRENT (A) IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 TJ = 25 oC TJ = 100 oC TJ = 125 oC -2 VGS = 0 V 10 -3 10 -4 10 TJ = 125 oC -5 10 -6 10 -7 10 TJ = 25 oC -8 10 -9 10 -10 1 0.001 0.01 0.1 1 10 10 100 0 3 tAV, TIME IN AVALANCHE (ms) P(PK), PEAK TRANSIENT POWER (W) 100 us 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms SINGLE PULSE TJ = MAX RATED 100 ms 1s 10 s DC RJA = 190 oC/W 0.01 0.01 12 15 18 1000 10 0.1 9 Figure 10. Gate Leakage Current vs Gate to Source Voltage 100 1 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) Crss TA = 25 oC 0.1 1 10 100 SINGLE PULSE RJA = 190 oC/W 100 TA = 25 oC 10 1 0.1 -4 10 -3 10 -2 10 -1 10 1 10 100 t, PULSE WIDTH (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1000 FDME820NZT N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA o RJA = 190 C/W 0.001 -4 10 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (s) Figure 13. Junction-to-Ambient Transient Thermal Response Curve www.onsemi.com 5 100 1000 FDME820NZT N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25 C unless otherwise noted www.onsemi.com 6 FDME820NZT N-Channel PowerTrench(R) MOSFET Dimensional Outline and Pad Layout ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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