©2012 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
FDME820NZT/D
FDME820NZT N-Channel PowerTrench® MOSFET
FDME820NZT
N-Channel PowerTrench® MOSFET
20 V, 9 A, 18 mΩ
Features
Max rDS(on) = 18 mΩ at VGS = 4.5 V, ID = 9 A
Max rDS(on) = 24 mΩ at VGS = 2.5 V, ID = 7.5 A
Max rDS(on) = 32 mΩ at VGS = 1.8 V, ID = 7 A
Low profile: 0.55 mm maximum in the new package
MicroFET 1.6x1.6 Thin
Free from halogenated compounds and antimony oxides
HBM ESD protection level >2.5 kV (Note3)
RoHS Compliant
General Description
This Single N-Channel MOSFET has been designed using
ON Semiconductor’s advanced Power Trench process to
optimize the rDS(ON) @ VGS = 1.8 V on special MicroFET
leadframe.
Applications
Li-lon Battery Pack
Baseband Switch
Load Switch
DC-DC Conversion
MicroFET 1.6x1.6 Thin
G
D
D
TOP
BOTTOM
Pin 1 D
G
DS
D
DS
D
D
S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 20 V
VGS Gate to Source Voltage ±12 V
IDDrain Current -Continuous TA = 25 °C (Note 1a) 9 A
-Pulsed 40
PDPower Dissipation for Single Operation TA = 25 °C (Note 1a) 2.1 W
Power Dissipation for Single Operation TA = 25 °C (Note 1b) 0.7
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 70 °C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 190
Device Marking Device Package Reel Size Tape Width Quantity
8T FDME820NZT MicroFET 1.6x1.6 Thin 7 ’’ 8 mm 5000 units
FDME820NZT N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 20 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 250 μA, referenced to 25 °C 20 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 μA
IGSS Gate to Source Leakage Current VGS = ±12 V, VDS = 0 V ±10 μA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 0.5 0.8 1.0 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 250 μA, referenced to 25 °C -3 mV/°C
rDS(on) Drain to Source On Resistance
VGS = 4.5 V, ID = 9 A 14 18
mΩ
VGS = 2.5 V, ID = 7.5 A 17 24
VGS = 1.8 V, ID = 7 A 26 32
VGS = 4.5 V, ID = 9 A ,
TJ = 125 °C 19 24
Ciss Input Capacitance VDS = 10 V, VGS = 0 V,
f = 1 MHz
865 pF
Coss Output Capacitance 203 pF
Crss Reverse Transfer Capacitance 190 pF
RgGate Resistance 1.0 Ω
td(on) Turn-On Delay Time VDD = 10 V, ID = 4 A
VGS = 4.5 V, RGEN = 2 Ω
9ns
trRise Time 5ns
td(off) Turn-Off Delay Time 19 ns
tfFall Time 5ns
QgTotal Gate Charge VDD = 4.2 V, ID = 3 A, VGS = 4.3 V 8.0 nC
QgTotal Gate Charge VDD = 4.2 V, ID = 3 A, VGS = 4.5 V 8. 5 nC
Qgs Gate to Source Gate Charge VDD = 10 V, ID = 9 A 1.4 nC
Qgd Gate to Drain “Miller” Charge 3.2 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 1.6 A (Note 2) 0.7 1.2 V
VGS = 0 V, IS = 9 A (Note 2) 0.8 1.2 V
trr Reverse Recovery Time IF = 9 A, di/dt = 100 A/us 18 ns
Qrr Reverse Recovery Charge 4 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad o n a 1.5 x 1.5 in. board of FR-4 m aterial. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied.
a. 70 °C/W when mounte d on
a 1 in2 pad of 2 oz copper. b. 190 °C/W whe n mounte d on a
minimum pad of 2 oz copper.
G
DF
DS
SF
SS
G
DF
DS
SF
SS
www.onsemi.com
2
FDME820NZT N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
VGS = 1.5 V
VGS = 2.5 V
VGS = 1.8 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
VGS = 2 V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MA X
On Region Characteristics Figure 2.
0 10203040
0
1
2
3
4
5
VGS = 2 V
VGS = 1.5 V
VGS = 2.5 V
PULSE D U RA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOU RC E ON-RESISTA NCE
ID, DRA IN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
VGS = 1.8 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 9 A
VGS = 4.5 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPER ATURE (oC)
vs Junction Te mperature Figure 4.
0.91.82.73.64.5
0
20
40
60
80
TJ = 125 oC
ID = 9 A
TJ = 25 oC
VGS, GA TE TO SOU RC E VO LTA GE (V)
rDS(on), DRAIN T O
SOURCE ON-RESISTANCE (mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
10
20
30
40
TJ = 150 oC
VDS = 5 V
PULSE D U R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6.
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
1000
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
Forward Voltage vs Source Current
www.onsemi.com
3
FDME820NZT N-Channel PowerTrench® MOSFET
Figure 7.
036912
0.0
0.9
1.8
2.7
3.6
4.5 ID = 9 A
VDD = 12 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 8 V
Gate Charge Characteristics Figure 8.
0.1 1 10 20
100
1000
2000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Ca pacitance vs Drain
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100
1
10
20
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Unc l amped Indu c tive
Switching Capability Figure 10.
0369121518
10-10
10-9
10-8
10-7
10-6
10-5
10-4
10-3
10-2
10-1
VGS = 0 V
TJ = 125 oC
TJ = 25 oC
VGS, GATE TO SOUR C E VO LTAGE (V)
Ig, GATE LEAKAGE CURRENT (A)
Gate Leakage Current vs Gate
to Source Voltage
Figure 11. Forward Bias Safe
Operating Are a
0.01 0.1 1 10 100
0.01
0.1
1
10
100
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 190 oC/W
TA = 25 oC
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.1
1
10
100
1000
SINGLE PULSE
RθJA = 190 oC/W
TA = 25 oC
P(PK), PEAK TRANSIENT POW ER (W )
t, PULSE WIDTH (s)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
www.onsemi.com
4
FDME820NZT N-Channel PowerTrench® MOSFET
Figure 13.
10-4 10-3 10-2 10-1 110
100 1000
0.001
0.01
0.1
1
SINGLE PULSE
RθJA = 190 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURATION (s)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
2
PDM
t1t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Junction-to-Ambient Transient Thermal Response Curve
Typical Characteristics TJ = 25 °C unless otherwise noted
www.onsemi.com
5
FDME820NZT N-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
www.onsemi.com
6
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
© Semiconductor Components Industries, LLC
❖
