N EC HIGH ISOLATION VOLTAGE AC INPUT RESPONSE TYPE | P$2505-1, -2, -4 MULTI OPTOCOUPLER SERIES | * 4 FEATURES DESCRIPTION HIGH ISOLATION VOLTAGE PS2505-1, -2, and -4 and PS2505L-1, -2, and -4 are optically BV: 5 kVr.m.s. MIN coupled isolators containing a GaAs light emitting diode and . an NPN silicon phototransistor. PS2505-1, -2, and -4 are ina man coon TO EMITTER VOLTAGE plastic DIP (Dual In-line Package) and PS2505-1, -2, and -4 are in a lead bending type (Gull-wing) for surface mount. HIGH CURRENT TRANSFER RATIO CTR: 300% TYP * HIGH SPEED SWITCHING APPLICATIONS tr=3 us, tt=5 ys TYP Interface circuit for various instrumentations and control * LOW COST equipments. ISOLATED CHANNELS PER EACH PACKAGE * AC LINE / DIGITAL LOGIC AC INPUT RESPONSE DIGITAL LOGIC / DIGITAL LOGIC TWISTED PAIR LINE RECEIVER TELEPHONE / TELEGRAPH LINE RECEIVER * SEQUENCE CONTROLLERS SYSTEMS APPLICATIONS, MEASURING ELECTRICAL CHARACTERISTICS (ta= 25C) INSTRUMENTS PART NUMBER PS2505-1, -2, -4 PS2505L-1, -2, -4 SYMBOLS PARAMETERS UNITS MIN TYP MAX 3 VF Forward Voltage, IF = +10 mA Vv 1.17 1.4 5 Cc Junction Capacitance, V= 0, f = 1.0 MHz pF 100 5 Iceo Collector to Emitter Dark Current, Vce = 80 V, IF =0 nA 100 3 BVcEO Collector to Emitter Breakdown Voltage, ic= 1 mA, IB =0 Vv 40 60 = BYVEco Emitter to Collector Breakdown Voltage, lc = 100 pA, Ip = 0 Vv 7 9 CTR Current Transfer Ratio , lF=+5 mA, Vce=5V % 80 300 600 VCE (sat) Collector Saturation Voltage, iF = +10 mA, Ilc=2mA Vv 0.3 3 R 1-2 Isolation Resistance, Vin-out = 1.0 kV Q 10" > C12 Isolation Capacitance, V = 0, f= 1.0 MHz pF 0.5 S tr Rise Time ', Vcc = 10 v, Ic= 2mA, Ri = 100Q HS tt Fall Time ?, Vcc = 10 V, Ic =2 mA, Rt = 1009 us CTRiIV/CTR2e | CTR? Ratio, IF=5mA, VcE=5V 0.3 0.1 3.0 Notes: . a ict Ice 1. Test Circuit for Switching Time 2, CTAI= ey CT R2= ie PULSE INPUT 3 \-1 om _ 4 8765 16 181413121110 9 7 r r -~9 PW = 100 pa ) non , vce Duty cycte =1/10, Ica if if it f if2 _ P] 12 1234567 8 PS2505-1 PS$2505-2 PS2505-4 1-35 PS2505-1, -2, -4, PS2505L-1, -2, -4 ABSOLUTE MAXIMUM RATINGS! (14 = 25C) L RATINGS YMBOLS PARAMETERS UNITS | ps2505-1 PS2505-2,4 PS2505L-1 | PS2505L-2, 4 Diode le Forward Current mA 80 80 Po Power Dissipation mW/Ch 150 120 ip (Peak) | Peak Forward Current A t 1 (PW = 100 us, Duty Cycle 1%) Transistor VcEO Collector to Emitter Voltage} V 80 80 Veco__| Emitter to Collector Voltage|_*V 7 7 Ic Collector Current mA 50 50 Pc Power Dissipation mW/Ch 150 120 Coupled BV Isolation Voltage 2 Vins. 5000 5000 TSTG Storage Temperature C -55 to+150| -55 to +150 TOPT Operating Temperature C -55 to +100} -55 to +100 TSOL Lead Temperature C 260 260 (Soldering 10 s) Pr Total Power Dissipation mW/Ch 250 200 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. AC voltage for 1 minute at Ta = 25 C, RH = 60 % between input and ouput. TYPICAL PERFORMANCE CURVES (ta = 25 c) Diode Power Dissipation, Po (mW) DIODE POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 AQ psesos-1 \ Ps2sosi-t 100 PS2505-2 N 1.5 mW/'C PS2505-4 N\ |__ PS2505L-2 PS2505L-4 N\ 50 12mWw/s'c \ 0 25 50 75 100. 125 150 Ambient Temperature, Ta(C } 1-36 Transistor Power Dissipation, Pc (mW) 150 50 TRANSISTOR POWER DISSIPATION vs. AMBIENT TEMPERATURE -_ PS2505-1 N PS2S05L-t PS2505-2 \ te mWi'c PS2505-4 |_ PS2505L-2 PS2505L-4 \ \ 1.2mW/"C \ 25 50 75 100 125 Ambient Temperature, TA(C ) 180 TYPICAL PERFORMANCE CURVES ta = 25c) Forward Current, le (mA) Collector to Emitter Dark Current, Iceo (nA) Collector Current, Ic (mA) FORWARD CURRENT vs. FORWARD VOLTAGE 0.5 01 07 O08 09 10 14 #12 13 14=15 Forward Voltage, VF (V ) COLLECTOR TO EMITTER DARK CURRENT vs. AMBIENT TEMPERATURE VCE =B80V VcE = 40V VCE = 24V VceE=10V VCE=5V 50 -25 0 25 80 2=75~100 Ambient Temperature, Ta (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 0 2 4 6 8 10 Collector to Emitter Voltage, Vce (V) 1-37 Forward Current, IF (mA) Collector Current, ic (mA) ACTR, Normalized Output Current PS2505-1, -2, -4, PS2505L-1, -2, -4 FORWARD CURRENT vs. FORWARD VOLTAGE 80 60 40 20 0 -20 -40 -60 Ons 40. 05 0 05 10 45 Forward Voltage, VF (V ) COLLECTOR CURRENT vs. COLLECTOR SATURATION VOLTAGE 40 0.5 0.1 0 0.2 0.4 0.6 Os 1.0 Collector Saturation Voltage, VcEs at (V) NORMALIZED OUTPUT CURRENT vs. AMBIENT TEMPERATURE Y 1.0 YP LLL ee 08 0.6 0.4 2 Normalized to 1.0 at TA = 25C 0 IF=5 mA, VCE=5V 50-25 0 25 50 75 100 Ambient Temperature, Ta (C) PS2505-1, -2, -4, PS2505L-1, -2, -4 TYPICAL PERFORMANCE CURVES (ta = 25) Current Transfer Ratio, CTR (%) Switching Time, (us) Voltage Gain, Av (dB) CURRENT TRANSFER RATIO (CTR) vs. FORWARD CURRENT 450 350 300 250 200 0.05 0.1 0s 1 5 10 50 Forward Current, iF (mA) SWITCHING TIME vs. LOAD RESISTANCE I=5mA vec =5V TA = 25C CTR 290 % td 1 100 500 1k 5 10k 50k 100k Load Resistance, RL (Q) FREQUENCY RESPONSE (F=5mA VceE=5V Q 05 1 2 1020 80 100 200 500 Frequency, f (kHz) 1-38 Switching Time, t qus) CTR Degradation, (Relative Value) 1 10 1.0 0.8 0.6 0.4 0.2 SWITCHING TIME vs. LOAD RESISTANCE ic=2mA Voc = 10V TAs 25'C CTR 290 50 100 500 1k Load Resistance, RL (Q) LONG TERM CTR DEGRADATION Sk 10k TYP. \F= 5mA TA= 25C. lF= 5mA TaA=60C./ 102 103 104 1 Operating Time, (h) PS2505-1, -2, -4, PS2505L-1, -2, -4 OUTLINE DIMENSIONS (units in mm) PS2505-1 PS2505-2 5.1 MAX 43 576 5 fo otf 12 1234 +. Anode, Cathode 4, 3. Anode, Cathode 2. Cathode, Anode 2, 4. Cathode, Anode 7.62 3. Emitter 5, 7. Emitter 4. Collector 7.62 6, 8. Collector 4.55 MAX 2.8 MIN 4 955] 0.50 + 0.10 . O10 15 134-4 Gjozs Bi Oto 15 PS2505-4 16 151413121110 9 OMA Ty WY bd a fs bd 6 & & & 6.5 Wo trio o 12345678 1,3,5, 7. Anode, Cathode 3.8 12.84! 2, 4, 6, 8. Cathode, Anode MAX ae! 7,62 9, 11,13, 15. Emitter 10, 12, 14, 16. Collector 4.55 MAX 2.8 MIN [0.65 0.50 + 0.10 owis 1,94-- OUTLINE DIMENSIONS (units in mm) PS2505L-1 43 PS2505L-2 8765 PL fy Py i 12 1. Anode, Cathode 7.62 2. Cathode, Anode 3. Emitter 4, Collector 2.54: eet 0.05 002 38 MAX 0.9 + 0.25 1.34+0.10 9.60 + 0.4 razor k Sloss wl * los Se, ce PS2505L-4 16 15 1413 121110 9 Anode, Cathode Cathode, Anode Emitter 3.8 MAX OHHH thse + 0.10 ED[0.25 My) 1-39