SFH 320
SFH 320 FA
NPN-Silizium -Fototransistor im SMT TOPLED®-Gehäuse
Silicon NPN Phototransistor in SMT TOPLED®-Package
SFH 320 SFH 320 FA
2001-02-22 1
Wesentliche Merkmale
• Speziell geeignet für Anwendungen im Bereich
von 380 nm bis 1150 nm (SFH 320) und bei
880 nm (SFH 320 FA)
• Hohe Linearität
• P-LCC-2 Gehäuse
• Gruppiert lieferbar
• Für alle Lötverfahren geeignet
Anwendungen
• Miniaturlichtschranken für Gleich- und
Wechsellichtbetrieb
• Lochstreifenleser
• Industrieelektronik
• „Messen/Steuern/Regeln“
Typ
Type Bestellnummer
Ordering Code Typ
Type Bestellnummer
Ordering Code
SFH 320 Q62702-P0961 SFH 320 FA Q62702-P0988
SFH 320-3 Q62702-P390 SFH 320 FA-3 Q62702-P393
SFH 320-3/-4 Q62702-P3602 SFH 320 FA-3/-4 Q62702-P3601
SFH 320-4 Q62702-P1606 SFH 320 FA-4 Q62702-P1607
Features
• Especially suitable for applications from
380 nm to 1150 nm (SFH 320) and of 880 nm
(SFH 320 FA)
• High linearity
• P-LCC-2 package
• Available in groups
• Suitable for all soldering methods
Applications
• Miniature photointerrupters
• Punched tape readers
• Industrial electronics
• For control and drive circuits
2001-02-22 2
SFH 320, SFH 320 FA
Grenzwerte
Maximum Ratings
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
Betriebs- und Lagertemperatur
Operating and storage temperature range Top; Tstg – 40 …+ 100 °C
Kollektor-Emitterspannung
Collector-emitter voltage VCE 35 V
Kollektorstrom
Collector current IC15 mA
Kollektorspitzenstrom, τ < 10 µs
Collector surge current ICS 75 mA
Verlustleistung, TA = 25 °C
Total power dissipation Ptot 165 mW
Wärmewiderstand für Montage auf PC-Board
Thermal resistance for mounting on pcb RthJA 450 K/W
SFH 320, SFH 320 FA
2001-02-22 3
Kennwerte (TA = 25 °C, λ = 950 nm)
Characteristics
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 320 SFH 320 FA
Wellenlänge der max. Fotoempfindlichkeit
Wavelength of max. sensitivity λSmax 860 900 nm
Spektraler Bereich der Fotoempfindlichkeit
S = 10% von Smax
Spectral range of sensitivity
S = 10% of Smax
λ380 …1150 730 …1120 nm
Bestrahlungsempfindl iche Fläche (∅ 240 µm)
Radiant sensitive area A0.045 0.045 mm2
Abmessung der Chipfläche
Dimensions of chip area L×B
L×W0.45 ×0.45 0.45 ×0.45 mm ×mm
Abstand Chipoberfläche zu
Gehäuseoberfläche
Distance chip front to case surface
H0.5 …0.7 0.5 …0.7 mm
Halbwinkel
Half angle ϕ± 60 ± 60 Grad
deg.
Kapazität, VCE = 0 V, f = 1 MHz, E=0
Capacitance CCE 5.0 5.0 pF
Dunkelstrom
Dark current
VCE = 25 V, E=0
ICEO 1 (≤ 200) 1 (≤ 200) nA
2001-02-22 4
SFH 320, SFH 320 FA
Directional Characteristics
Srel = f (ϕ)
Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern
gekennzeichnet.
The phototransistors are grouped according to their spectral sensitivity and distinguished by
arabian figures.
Bezeichnung
Parameter Symbol
Symbol Wert
Value Einheit
Unit
SFH 320/FA -2 -3 -4
Fotostrom, λ = 950 nm
Photocurrent
Ee = 0.1 mW/cm2, VCE = 5 V
SFH 320:
Ev = 1000 Ix, Normlicht/standa rd
light A, VCE = 5 V
IPCE
IPCE
≥ 16
–
16 ... 32
420
25 ... 50
650
40 ... 80
1000
µA
µA
Anstiegszeit/Abfallzeit
Rise and fall time
IC = 1 mA, VCC = 5 V, RL = 1 kΩ
tr, tf7678µs
Kollektor-Emitter-
Sättigungsspannung
Collector-emitter saturation
voltage
IC = IPCEmin1) × 0.3,
Ee = 0.1 mW/cm2
VCEsat 150 150 150 150 mV
1) IPCEmin ist der minima le F ot os tr om der jeweilige n Gruppe.
1) IPCEmin is the min. photocurrent of th e sp ec if ied group.
OHF01402
90
80
70
60
50
40 30 20 10
20 40 60 80 100 1200.40.60.81.0
ϕ
0.2
0.4
0.6
0.8
1.0
100 0
0
0
SFH 320, SFH 320 FA
2001-02-22 5
Relati ve Sp ectral Sensi ti vi ty,
SFH 320 Srel = f (λ)
Tota l Power Dissipatio n
Ptot = f (TA)
Dark Current
ICEO = f (TA), VCE = 5 V, E = 0
λ
OHF01121
0
rel
S
400 600 800 1000 1200
20
40
60
80
%
100
nm
OHF00871
tot
P
00
40
80
120
160
mW
200
20 40 60 80 ˚C 100
T
A
T
OHF01530
A
CEO
Ι
-1
10
10
0
10
1
10
2
10
3
-25
nA
0 25 50 75 100
˚C
Relative Spectral Sensitivity,
SFH 320 FA Srel = f (λ)
Photocurrent
IPCE = f (VCE), Ee = Par ame te r
Capacitance
CCE = f (VCE), f = 1 MHz, E = 0
V
OHF01529
CE
PCE
Ι
0
0
10
10
-2
10
-1
mA
V
5 10 15 20 25 30 35
mW
cm
2
0.1
0.25
2
cm
mW
0.5
2
cm
mW
1
2
cm
mW
V
OHF01528
CE
-2
10
CE
C
10
-1
10
0
10
1
10
2
0V
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
pF
Photocurrent
IPCE = f (Ee), VCE = 5 V
Dark Current
ICEO = f (VCE), E = 0
Photocurrent
IPCE /IPCE25° = f (TA), VCE = 5 V
E
OHF01924
e
PCE
Ι
10
-1
10
-3
10
-2
10
0
10
0
10
1
10
2
10
3
2
mW/cm
2
3
4
µA
V
OHF01527
CE
CEO
Ι
-3
10
10
-2
10
-1
10
0
10
1
0 5 10 15 20 25 30 35V
nA
T
OHF01524
A
0
-25
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 25 50 75 100
Ι
PCE
PCE
Ι
25
C
2001-02-22 6
SFH 320, SFH 320 FA
Maßzeichnung
Package Outlines
Maße werden wi e fo lgt angegeben: m m (inc h) / Dim ensions are spe cified as follows: m m (inc h).
GPLY6030
0.7 (0.028)
0.9 (0.035)
1.7 (0.067)
2.1 (0.083)
0.12 (0.005)
0.18 (0.007)
0.5 (0.020)
1.1 (0.043)
3.3 (0.130)
3.7 (0.146)
0.4 (0.016)
0.6 (0.024)
2.6 (0.102)
3.0 (0.118)
2.1 (0.083)
2.3 (0.091)
Collector marking
3.0 (0.118)
3.4 (0.134)
(2.4) (0.095)
0.1 (0.004) (typ.)
4˚±1
SFH 320, SFH 320 FA
2001-02-22 7
Zusätzliche Informationen über allge m eine Lötbeding ungen erhalten S ie auf Anf rage.
For additional information on general soldering conditions please contact us.
Published by OSRAM Opto Semiconductors GmbH & Co. OHG
Wernerwerkstrasse 2, D-93049 Regensburg
© All Rights Reserved.
Attention please!
The inform at ion describe s the type of compon ent and shall not be considered as assured characte ris tics .
Terms of delivery and rights to change design reserved. Due to technical requirements components may contain
dangerous substances. For information on the types in question please contact our Sales Organization.
Packing
Please use the recyc ling operat ors known t o you. We can also help y ou – get in touch wit h your near est sales offic e.
By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing
material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs
incurred.
Components used in life-support devices or systems must be expressly authorized for such purpose! Critical
components 1 , may only be used in life-support devices or systems 2 with the express written approval of OSRAM OS.
1 A critica l component is a co mponent usedin a l ife-support devi ce or system whose failure can re asonably be expec ted
to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system.
2 Life sup port device s or syst ems ar e int ended (a ) to b e imp lanted in t he hu man body , or ( b) to supp ort a nd/or main tain
and sust ain human life. If th ey fail , it is rea so nable to assum e th at the health of the user may be endange red.
Löthinweise
Soldering Conditions
Bauform
Types Tauch-, Schwall- und Schlepplötung
Dip, Wave and Drag Soldering Reflowlötung
Reflow Soldering
Lötbad-
temperatur
Temperature
of the
Soldering
Bath
Maximal
zulässige
Lötzeit
Max. Perm.
Soldering
Time
Abstand
Lötstelle –
Gehäuse
Distance
between
Solder Joint
and Case
Lötzonen-
temperatur
Temperature
of Soldering
Zone
Maximale
Durchlaufzeit
Max. Transit
Time
TOPLED 260 °C 10 s –245 °C10 s
