MR850-MR858
3.0A FAST RECOVERY RECTIFIER
Data Sheet 2728, Rev. -
Features
l Glass Passivated Die Construction
l Ideally Suited for Automatic Assembly
l Low Forward Voltage Drop, High Efficiency
l Low Power Loss A B A
l Fast Recovery Time
l High Surge Current Capability
C
D
Mechanical Data
l Case: Molded Plastic
l Terminals: Solder Plated, Solderable
per MIL-STD-750, Method 2026
l Polarity: Cathode Band or Cathode Notch
l Marking: Type Number
l Mounting Position: Any
l Weight: 0.21 grams (approx.)
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic Symbol MR850 MR851 MR852 MR854 MR856 MR858 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR 50 100 200 400 600 800 V
RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 V
Average Rectified Output Current @TL = 75°C IO 3.0 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method) I FSM 150 A
Forward Voltage @I F = 3.0A VFM 1.25 1.30 V
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C IRM 10
200 µA
Reverse Recovery Time (Note 1) trr 100 150 nS
Typical Junction Capacitance (Note 2) Cj 80 pF
Operating and Storage Temperature Range Tj, TSTG -65 to +150 °C
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
SENSITRON
SEMICONDUCTOR
• 221 West Industr y Court ! Deer Park, NY 11729-4681 ! (631) 586- 7600 FAX (631) 242-9798 •
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DO-201AD
Dim Min Max Min Max
A 25.4 — 1.000 —
B 8.50 9.50 0.335 0.374
C 1.20 1.30 0.047 0.051
D 5.0 5.60 0.197 0.220
All In mm In inch
MR850-MR858
3.0A FAST RECOVERY RECTIFIER
Data Sheet 2728, Rev. -
SENSITRON
SEMICONDUCTOR
• 221 West Industr y Court ! Deer Park, NY 11729-4681 ! (631) 586- 7600 FAX (631) 242-9798 •
• World Wid e We b Site - http: //www.se nsitro n.c om • E-Mail Address - sales@sensitr on. com •
FIG.5- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
DUT
(+)
50Vdc
(approx)
(-)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
(-)
(+)
10W
NONINDUCTIVE
-1.0A
-0.25A
0
+0.5A
trr
1cm SET TIME BASE FOR
5/ 10ns/ cm
RATINGS AND CHARACTERISTIC CURVES (MR850- MR858)
FIG.3- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT. (A)
1.6 1.80.4 0.6 0.8 1.0 1.2 1.4
.03
0.1
0.3
1.0
10
20
3.0
.01
FORWARD VOLTAGE. (V)
Tj=25 C
Pulse Width=300 s
1% Duty Cycle
o
FIG.4- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
1 2 4 6 10 100604020
20
0
40
60
90
80
REVERSE VOLTAGE. (V)
Tj=25 C
0
FIG.2- MAXIMUM NON-REPETITIVE PEAK SURGE
CURRENT
PEAK FORWARD SURGE CURRENT. (A)
1051 50 100
100
150
50
10
NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine Wave
JEDEC Method
Tj=25 C
0
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT AMPERES
250 50 75 100 125 150 175
2
0
1
3
4
AMBIENT TEMPERATURE. ( C)
o
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375"(9.5mm)
Lead Length
• 221 West Industry Court Deer Park, NY 11729-4681 (631) 586-7600 FAX (631) 242-9798 •
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
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1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
of the datasheet(s).
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medical equipment, and safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by
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