Rugged Power MOSFETs IRF640R, IRF641R, IRF642R, IRF643R Avalanche Energy Rated N-Channel Power MOSFETs 16A and 18A, 200V, 150V ros(on) = 0.18 and 0.220 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited @ Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF640R, IRF641R, IRF642R and IRF643R are ad- vanced power MOSFETs designed, tested, and guaranteed to withstand a specified fevel of energy in the breakdown avalanche mode of operation. These are n-channel en- hancement-mode silicon-gate power field-effect transis- tors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and driv- ers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF-types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings File Number 2010 N-CHANNEL ENHANCEMENT MODE D 92c5- 42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE a DRAIN === > {i nen = > DRAIN ~ (FLANGE} OC) TOP VIEW GATE 92CS-39528 JEDEC TO-220AB P: IRF640R IRF641R IRF642R IRF643R Units Vos Drain - Source Voltage 200 150 200 150 Vv Vocr Drain - Gate Voltage (Res = 20 KQ) @ 200 150 200 150 Vv Ip @ Te = 25C Continuous Drain Current 18 18 16 16 A Ip @ Te = 100C Continuous Drain Current 11 1 10 10 A lpm Pulsed Drain Current @ 72 72 64 64 A Ves Gate - Source Voitage +20 v Po @ Tc = 25C Max. Power Dissipation 125 (See Fig. 14) Ww Linear Derating Factor 1.0 (See Fig. 14) w/c Eas Single Pulse Avalanche Energy Rating @ 580 mj Toe Storage fomperature ange ~55 to 150 C Lead Temperature 300 (0.063 in. (1.6mm) from case for 10s) C 6-122Rugged Power MOSFETs IRF640R, IRF641R, IRF642R, IRF643R Electrical Characteristics @ Tc = 25C (Unless Otherwise Specified) P Type Min. | Typ. | Max. | Units Test Conditions BVoss Drain - Source Breakdown Voltage IRF640R _ IRF642R 200 - _ v Vas = OV IRF641R = IRF643R 150 = _- Vv lo = 250uA Vesin Gate Threshold Voltage ALL 20 _ 4.0 Vv Vos = Vas, lp = 250u A less Gate-~Source Leakage Forward ALL _ _ 500 nA Ves = 20V lass Gate-Source Leakage Reverse ALL _ ~500 nA Ves = -20V loss Zero Gate Voltage Drain Current - _ 250 HA Vos = Max. Rating, Vas = OV ALL [| _ | 1000 [pa | Vos = Max. Rating x 0.8, Vas = OV, Te = 125C loom On-State Drain Current @ IRF640R | ig _ _ A IRF641R Vos > lotions X Roston max. Ves = 10V IRF642R | 16 _ _ A IRF643R Rosion Static Drain-Source On-State IRF640R * 0.14 0.18 Q Resistance @ eae Ves = 10V, Ip = 104 IRF643R _ 0.20 0.22 2 | Ore Forward Transconductance @ ALL 6.0 10 = S(Q)_| Vos > lnton X Rosionmax, Ip = 10A Cine Input Capacitance ALL = 1275 = PF __| Veg = OV, Vos = 25V, f = 1.0 MHz Coss Output Capacitance ALL = 500 _ pF See Fig. 10 Cres Reverse Transfer Capacitance ALL 160 = pF . teton Turn-On Delay Time ALL = 16 30 ns Voo = 75V, lo = 10A, Zo = 4.7Q t Rise Time ALL = 27 60 ns See Fig. 17 taiom _ Turn-Off Delay Time ALL = 40 80 ns__| (MOSFET switching times are essentially te Fall Time ALL _ 31 60 ns independent of operating temperature.) Q. Tota! Gate Charge ALL _ 43 60 nc Ves = 10V, Ip = 22A, Vos = 0.8V Max. Rating. {Gate-Source Plus Gate-Drain) See Fig. 18 for test circuit. (Gate charge is Quy Gate-Source Charge ALL _ 16 _ nc essentially independent of operating ea Ailiggt temperature.) Qya Gate-Drain (Miller) Charge ALL - 27 = nc Lo Internal Drain Inductance _- 3.5 - nH Measured from the Modified MOSFET contact screw on tab symbol showing the to center of die. internal device ALL _- 45 _ nH Measured from the inductances. drain lead, 6mm (0.25 5 in.) from package to Lo center of die. Ls Internal Source Inductance ALL - 7.5 _ nH Measured from the 6 source lead, 6mm us (0.25 in.) from package to source wees oS bonding pad. Thermal Resistance RinJC Junction-to-Case ALL = = 1,0 C/W RnCS_ Case-to-Sink ALL _ 1.0 _ C/W_| Mounting surface flat, smooth, and greased. RinJA Junction-to-Ambient ALL = _ 80 C/W | Free Air Operation Source-Drain Diode Ratings and Characteristics Is Continuous Source Current IRF640R | _ 18 A Modified MOSFET symbol (Body Diode) IRF641R showing the integral 0 IRF642R A reverse P-N junction rectifier. inFeasR| ~ | ~ | 16 Isna Pulse Source Current IRF640R;} _ 72 A S (Body Diode) IRF641R IRF642R sic esas IRF643R | 7 64 A Vso Diode Forward Voltage IRF4OR _ _ 20 Vv To = 25C, ls = 18A, Ves = OV eeeaet | | 19 | Vv | Te=25C, ts=16A, Vos =0V ty Reverse Recovery Time ALL _ 650 = ns Ts = 150C, le = 18A, dig/dt = 100A/ys Qra Reverse Recovered Charge ALL - 41 uc Ty = 150C, ie = 18A, dle/dt = 100A/us ton Forward Turn-on Time ALL Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + bp. @ T, = 25C to 150C. @ Pulse Test: Pulse width < 300us, Duty Cycle = 2%. @ Repetitive Rating: Pulse width limited by max. junction temperature. See Transient Thermal Impedance Curve (Fig. 5). @ Von = SOV, starting T, = 25C, L = 2.7 MH, Ros = 509, Ipeak = 18A. See figures 15, 16. 6-123Rugged Power MOSFETs IRF640R, IRF641R, IRF642R, IRF643R 40 80 vs PULSE ~ aw = Ss a |g, DRAIN CURRENT (AMPERES) 0 10 20 30 40 Vps. DRAIN-TO-SQURCE VOLTAGE (VOLTS) Fig. 1 Typical Output Characteristics Hs PULSE TEST ip, GRAIN CURRENT (AMPERES) 0 1 2 3 4 Vos, ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 3 Typical Saturation Characteristics et z a a 2 z = KE 10 wz >5 Bs 05 wa. w& hu Bz 02 5 Ze =s2 91 cu ox se 0.08 22 SINGLE PULSE (TRANSIENT er THERMAL IMPEDANCE) S 0.02 Q = sn 0.01 10-5 2 5 10-4 2 5 10-3 50 Ip, DRAIN CURRENT (AMPERES) 2 5 40-2 Ip, DRAIN CURRENT (AMPERES) 80 ys PULSE TEST I 1 1 Vos > '!pfon) * Ros(on) Q 2 4 6 8 10 Vgs, GATE-TO-SOUACE VOLTAGE (VOLTS) Fig. 2 Typical Transfer Characteristics BY sion} iRFe42R, in IRF642R, 3R Tp = 25C Ty= 150C MAX. Rene = 1.0 KAW SINGLE PULSE 3p inresor, 10 2 5 10 20 50 6100 =6200 500 Vag. ORAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 4 Maximum Safe Operating Area L [hm an 1. DUTY FACTOR, D = 2, PER UNIT BASE = Aine = 1.0 DEG. CW. 3. Tym - Te = Pom Zensclt). 5 10-1 2 1.0 2 10 11, SQUARE WAVE PULSE DURATION (SECONDS) Fig. 5 Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration 6-124Rugged Power MOSFETs 19.0 s & e Ty = 12500 ~ n ty TRANSCONDUCTANCE (SIEMENS) 80 ys PULSE TEST t I Vos > !D(on) * Ros(an) max. ys o 0 8 16 24 32 40 ip, DRAIN CURRENT (AMPERES) Fig. 6 Typical Transconductance Vs. Drain Current 1.25 S 2 = wo = = a a a BV oss, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) So B 0.75 -40 0 40 80 120 160 Ty, JUNCTION TEMPERATURE (9C) Fig. 8 Breakdown Voltage Vs. Temperature 2000 Cigg = Cog + Cou, Cas Crsg = Cog Cys Coa 1600 Coss = Cds * TFC = Cys + Cog = Ss 1200 o z= xt Ee o <= S 800 o 400 0 10 15 20 25 30 3540 45 Vos, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Fig. 10 Typical Capacitance Vs. Drain-to-Source Voltage IRF640R, IRF641R, IRF642R, IRF643R 50 nm a a wn Ty = 250C lpg. REVERSE DRAIN CURRENT (AMPERES) 0 4 0.8 1.2 16 2.0 Vgp, SOURCE-TO-ORAIN VOLTAGE (VOLTS} Fig. 7 Typical Source-Drain Diode Forward Voltage 25 ny o (NORMALIZED) in o Ss a Ros(on). ORAIN-TO-SOURCE ON-STATE RESISTANCE 0 -40 a 40 80 120 160 Ty, JUNCTION TEMPERATURE (C} Fig. 9 Normalized On-Resistance Vs. Temperature Ds | | Vos = 100v. | \ Vpg = 160V, IRF640R, 642R 10 5 1p = 228 FOR TEST CIRCUIT SEE FIGURE 18 Vgs, GATE-TO-SOURCE VOLTAGE (VOLTS) o 20 40 60 80 Oy, TOTAL GATE CHARGE (nC) Fig. 11 Typical Gate Charge Vs. Gate-to-Source Voltage 6-125Rugged Power MOSFETs IRF640R, IRF641R, IRF642R, IRF643R aston}. DRAIN-TO- SOURCE ON RESISTANCE (OHMS) Ig. DRAIN CURRENT {AMPERES) Rosion) MEASURED WITH CURRENT PULSE OF 2.0 us DURATION. INITIAL Ty = 25C. (HEATING EFFECT OF 2.0 us PULSE IS NINIMAL.) 9 20 40 60 30 25 50 6 100 125 150 Ip, ORAIN CURRENT (AMPERES) Tr, CASE TEMPERATURE (C) Fig. 12 Typical On-Resistance Vs. Drain Current Fig. 13 Maximum Drain Current Vs. Case Temperature Yos VARY tp TO OBTAIN REQUIRED PEAK I, bur Res -Yoo Vggt10V t Fe 0-012. a a = & 9205-42659 = Fig. 15 - Unclamped Energy Test Circuit o < 2 % a ws = = 92CS- 42660 0 20 40 60 80 = 100 120 (140 Fig. 16 Unclamped Energy Waveforms Te, CASE TEMPERATURE ("C) Fig. 14 Power Vs. Temperature Derating Curve Vos CURRENT (ISOLATED REGULATOR SUPPLY) SAME TYPE Rv 75v BATTERY ADJUST R, TO OBTAIN SPECIFIED Ig asi Vos Vos Turse ] ( our. | GENERATOR - SOURCE Iq | SIE Sma IMPEDANCE o a4 79 -Vos CURRENT CURRENT Lowe 45 = SHUNT SHUNT Fig. 17 - Switching Time Test Circuit Fig. 18 - Gate Charge Test Circuit 6-126