This product complies with the RoHS Directive (EU 2002/95/EC). Phototransistors PNZ120S (PN120S) Silicon planar type Unit: mm For optical control systems 4.10.3 Features 12.5 min. * High sensitivity * Wide directivity characteristics for easy use * Fast response: tr , tf = 3 s (typ.) * Signal mixing capability using base pin * Small size (3) ceramic package 2.00.2 3.00.2 0.30.05 0.450.05 Absolute Maximum Ratings Ta = 25C Parameter Symbol Rating Unit Collector-emitter voltage (Base open) VCEO 30 V Emitter-collector voltage (Base open) VECO 5 V IC 20 mA Collector current Collector power dissipation PC 50 mW Operating ambient temperature Topr -25 to +85 C Storage temperature Tstg -30 to +100 C 0.90.15 1 2 1: Collector 2: Emitter Electrical-Optical Characteristics Ta = 25C 3C Parameter Photocurrent Symbol *1, *2 Conditions ICE(L)1 VCE = 10 V, L = 2 lx ICE(L)2 VCE = 10 V, L = 500 lx Min Typ Max Unit 3 A 1.0 mA ICEO VCE = 10 V 5 Peak emission wavelength p VCE = 10 V 800 nm Half-power angle The angle from which photocurrent becomes 50% 50 Rise time *3 tr VCC = 10 V, ICE(L) = 5 mA, RL = 100 3 s Fall time *3 tf 3 s Dark current Collector-emitter saturation voltage *1 VCE(sat) ICE(L) = 1 mA, L = 1 000 lx 0.2 500 nA 0.5 V Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Spectral sensitivity characteristics: Sensitivity for wave length over 400 nm maximum sensitivity ratio is 100%. 3. This device is designed be disregarded radiation. 5. *1: Source: Tungsten (color temperature 2 856 K) *2: Rank classification Rank QL RL SL Q R S ICE(L)1 3 to 16 10 to 30 >24 ICE(L)2 5 typ. 6 typ. 8 typ. 1.0 to 5.0 4.0 to 9.0 >7.0 *3: Switching time measurement circuit Sig. in VCC (Input pulse) 50 Sig. out RL 90% 10% (Output pulse) tr tr: Rise time tf: Fall time tf Note) The part number in the parenthesis shows conventional part number. Publication date: June 2007 SHE00014CED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 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