Document Number: 86032 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Fast Avalanche Sinterglass Diode
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
Vishay Semiconductors
MECHANICAL DATA
Case: SOD-64
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 858 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Very fast rectification and switching diode
949588
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYT56A VR = 50 V; IFAV = 3 A SOD-64
BYT56B VR = 100 V; IFAV = 3 A SOD-64
BYT56D VR = 200 V; IFAV = 3 A SOD-64
BYT56G VR = 400 V; IFAV = 3 A SOD-64
BYT56J VR = 600 V; IFAV = 3 A SOD-64
BYT56K VR = 800 V; IFAV = 3 A SOD-64
BYT56M VR = 1000 V; IFAV = 3 A SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
BYT56A VR = VRRM 50 V
BYT56B VR = VRRM 100 V
BYT56D VR = VRRM 200 V
BYT56G VR = VRRM 400 V
BYT56J VR = VRRM 600 V
BYT56K VR = VRRM 800 V
BYT56M VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 80 A
Average forward current On PC board IFAV 1.5 A
l = 10mm IFAV 3A
Non repetitive reverse avalanche
energy I(BR)R = 0.4 A ER10 mJ
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86032
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 30-Jul-10
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
Vishay Semiconductors Fast Avalanche Sinterglass Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 25 K/W
On PC board with spacing 25 mm RthJA 70 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 3 A VF--1.4V
Reverse current VR = VRRM IR--5μA
VR = VRRM, Tj = 150 °C IR- - 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 100 ns
0
10
20
30
40
151050 202530
RthJA - Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949462
ll
T
L
= constant
IF - Forward Current (A)
0.001
0.01
0.1
1
10
100
0 0.5 1.0 1.5 2.0 3.02.5
VF - Forward Voltage (V)
16365
T
j
= 25 °C
T
j
= 175 °C
16366
I
FAV
- Average Forward Current (A)
0 20 40 60 80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VR = VRRM
half sinewave
RthJA = 70 K/W
PCB: d = 25 mm
RthJA = 25 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
Tj - Junction Temperature (°C)
16367
IR - Reverse Current (μA)
VR = VRRM
BYT56A, BYT56B, BYT56D, BYT56G, BYT56J, BYT56K, BYT56M
Fast Avalanche Sinterglass Diode Vishay Semiconductors
Document Number: 86032 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
0
50
250
100
300
150
350
200
400
450
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16368
PR - Reverse Power Dissipation (mW)
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
0
10
20
30
50
70
40
60
80
90
0.1 1 10 100
VR - Reverse Voltage (V)
16369
CD - Diode Capacitance (pF)
f = 1 MHz
Cathode Identification 4.3 (0.168) max.
1.35 (0.053) max.
4 (0.156) max.
Sintered Glass Case
SOD-64
26(1.014) min. 26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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