BD244B - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

  

 

. . . designed for use in general purpose amplifier and switching applications.

•Collector – Emitter Saturation Voltage —

VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc

•Collector Emitter Sustaining Voltage —

VCEO(sus) = 80 Vdc (Min) — BD243B, BD244B

VCEO(sus) = 100 Vdc (Min) — BD243C, BD244C

•High Current Gain Bandwidth Product

fT = 3.0 MHz (Min) @ IC = 500 mAdc

•Compact TO–220 AB Package

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎ

BD243B

BD244B

ÎÎÎÎ

BD243C

BD244C

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎ

VCB

ÎÎÎÎ

100

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎ

ÎÎÎÎÎÎÎ

2.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎÎ

0.52

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

1.92

ÎÎÎ

C/W

00 20 40 60 80 100 120 140 160

Figure 1. Power Derating

TC, CASE TEMPERATURE (

PD, POWER DISSIPATION (WATTS)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BD243B/D

 Motorola, Inc. 1995









6 AMPERE

POWER TRANSISTORS

COMPLEMENTARY

SILICON

80–100 VOLTS

65 WATTS

*Motorola Preferred Device

CASE 221A–06

TO–220AB



 



REV 7

   

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 30 mAdc, IB = 0) BD243B, BD244B

BD243C, BD244C

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 30 mAdc, IB = 0) BD243B, BD244B

BD243C, BD244C

ÎÎÎÎ

100

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) BD243B, BD243C, BD244B, BD244C

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 80 Vdc, VEB = 0) BD243B, BD244B

(VCE = 100 Vdc, VEB = 0) BD243C, BD244C

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

400

ÎÎÎ

µAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 0.3 Adc, VCE = 4.0 Vdc)

(IC = 3.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 6.0 Adc, IB = 1.0 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 6.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

2.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎ

3.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

(1) Pulse Test: Pulsewidth

300 µs, Duty Cycle

2.0%.

(2) fT = hfe • ftest

Figure 2. Switching Time Test Circuit

2.0

0.06

Figure 3. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

1.0

0.7

0.5

0.3

0.1

0.07

0.02 0.1 0.2 0.4 0.6 2.0 6.0

td @ VBE(off) = 5.0 V

TJ = 25

VCC = 30 V

IC/IB = 10

+ 11 V

VCC

– 30 V

SCOPE

– 4 V

tr, tf

10 ns

DUTY CYCLE = 1.0%

0.03

0.05

1.0 4.0

D1 MUST BE FAST RECOVERY TYPE eg.

1N5825 USED ABOVE IB

[

100 mA

MSD6100 USED BELOW IB

[

100 mA

– 9.0 V D1

RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

0.2

   

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t) EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

JC(max) = 1.92

C/W

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk) R

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

SINGLE PULSE

0.2

0.05

0.1

0.02

0.01

SINGLE

PULSE

0.03 0.3 3.0 30 300

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25

CURVES APPLY BELOW RATED VCEO

5.0

Figure 5. Active Region Safe Operating Area

5.0

1.0

0.1 10 20 60 100

TJ = 150

BD243B, BD244B

BD243C, BD244C

5.0 ms

0.5 ms

0.2

2.0

0.5

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

3.0

0.3

40 80

1.0

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 150

C: TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C, TJ(pk) may be calculated from the data in Fig-

ure 4. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

5.0

0.06

Figure 6. Turn-Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME ( s)

2.0

1.0

0.5

0.3

0.2

0.1

0.07

0.05 0.1 0.2 0.4 0.6 2.0 6.0

TJ = 25

VCC = 30 V

IC/IB = 10

IB1 = IB2

1.0 4.0

0.7

3.0

300

0.5

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 3.0 5.0 20 30 5010

CAPACITANCE (pF)

200

100

TJ = 25

Cib

Cob

   

4 Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOL

TS)

500

0.06

Figure 8. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5.0 0.1 0.2 0.3 0.4 0.6 1.0 2.0 6.0

100

2.0

0.06

Figure 9. Collector Saturation Region

IC, COLLECTOR CURRENT (AMPS)

0.2 0.3 0.6 2.0 3.0 4.0 6.0

0.8

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

V, VOLTAGE (VOLTS)

2.0

Figure 10. “On” Voltages

IB, BASE CURRENT (mA)

020 30 50 100 200 300 500 1000

1.6

1.2

0.8

0.4

IC = 1.0 A

TJ = 25

2.5 A 5.0 A

300

hFE, DC CURRENT GAIN

TJ = 150

–55

VCE = 2.0 V

+2.5

0.06

Figure 11. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

0.2 0.3 0.5 1.0 3.0 0.4 0.6

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0

+1.5

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

VB FOR VBE

VC FOR VCE(sat)

*APPLIES FOR IC/IB

≤

5.0

103

Figure 12. Collector Cut-Off Region

VBE, BASE-EMITTER VOLTAGE (VOLTS)

102

101

100

10–1

, COLLECTOR CURRENT ( A)

10–2

10–3

–0.3 –0.2 –0.1 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6

VCE = 30 V

TJ = 150

100

REVERSE FORWARD

IC = ICES

10M

Figure 13. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (

20 40 60 80 100 120 140 160

1.0M

100k

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

VCE = 30 V

IC = 10 x ICES

≈

ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 12)

7.0

0.1 1.00.4

1.6

1.2

VBE @ VCE = 4.0 V

+1.0

2.00.1

IC = 2 x ICES

200

4.0

+ 25

C to + 150

– 55

C to + 25

+ 25

C to + 150

– 55

C to + 25

+0.7

10k

1.0k

0.1k

   

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 221A–06

TO–220AB

ISSUE Y

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.570 0.620 14.48 15.75

B0.380 0.405 9.66 10.28

C0.160 0.190 4.07 4.82

D0.025 0.035 0.64 0.88

F0.142 0.147 3.61 3.73

G0.095 0.105 2.42 2.66

H0.110 0.155 2.80 3.93

J0.018 0.025 0.46 0.64

K0.500 0.562 12.70 14.27

L0.045 0.060 1.15 1.52

N0.190 0.210 4.83 5.33

Q0.100 0.120 2.54 3.04

R0.080 0.110 2.04 2.79

S0.045 0.055 1.15 1.39

T0.235 0.255 5.97 6.47

U0.000 0.050 0.00 1.27

V0.045 ––– 1.15 –––

Z––– 0.080 ––– 2.04

1 2 3

SEATING

PLANE

–T–

   

6 Motorola Bipolar Power Transistor Device Data

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BD243B/D

*BD243B/D*

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