MMRF1005HR5 MMRF1005HSR5
1
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
RF power transistors designed for CW and pulse applications operating at
1300 MHz. These devices are suitable for use in defense and commercial CW
and pulse applications, such as DME/IFF systems.
Typical Pulse Performance: VDD =50Vdc,I
DQ = 100 mA
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
IRL
(dB)
Pulse (200 sec,
10% Duty Cycle)
250 Peak 1300 22.7 57.0 -- 1 8
Typical CW Performance: VDD =50Vdc,I
DQ =10mA,T
C=61C
Signal Type
Pout
(W)
f
(MHz)
Gps
(dB)
D
(%)
IRL
(dB)
CW 230 CW 1300 20.0 53.0 -- 2 5
Capable of Handling a Load Mismatch of 10:1 VSWR, @ 50 Vdc, 1300 MHz
at all Phase Angles, 250 W Pulse Peak Power, 10% Duty Cycle, 200 sec
Features
Characterized with series equivalent large--signal impedance parameters
Internally matched for ease of use
Qualified up to a maximum of 50 VDD operation
Characterized from 20 to 50 V for extended power range
Integrated ESD protection
Greater negative gate--source voltage range for improved Class C
operation
In tape and reel. R5 suffix = 50 units, 56 mm tape width, 13--inch reel.
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +120 Vdc
Gate--Source Voltage VGS --6.0, +10 Vdc
Storage Temperature Range Tstg -- 65 to +150 C
Case Operating Temperature TC150 C
Operating Junction Temperature (1) TJ225 C
Total Device Dissipation @ TC=25C
Derate above 25C
PD476
2.38
W
W/C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2) Unit
Thermal Resistance, Junction to Case
Pulse: Case Temperature 65C, 250 W Peak, 200 sec Pulse Width, 10% Duty
Cycle, 50 Vdc, IDQ = 100 mA, 1300 MHz
CW: Case Temperature 77C, 235 W CW, 50 Vdc, IDQ = 10 mA, 1300 MHz
ZJC
RJC
0.07
0.42
C/W
1. Continuous use at maximum temperature will affect MTTF.
2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf and search for AN1955.
1300 MHz, 250 W, 50 V
LATERAL N--CHANNEL
RF POWER MOSFETs
MMRF1005HR5
MMRF1005HSR5
NI--780H--2L
MMRF1005HR5
NI--780S--2L
MMRF1005HSR5
Document Number: MMRF1005H
Rev. 1, 4/2015
Freescale Semiconductor
Technical Data
Freescale Semiconductor, Inc., 2013, 2015.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor
MMRF1005HR5 MMRF1005HSR5
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2
Machine Model (per EIA/JESD22--A115) B
Charge Device Model (per JESD22--C101) IV
Table 4. Electrical Characteristics (TA=25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 1 Adc
Drain--Source Breakdown Voltage
(VGS =0Vdc,I
D=50mA)
V(BR)DSS 120 — — Vdc
Zero Gate Voltage Drain Leakage Current
(VDS =50Vdc,V
GS =0Vdc)
IDSS — — 10 Adc
Zero Gate Voltage Drain Leakage Current
(VDS =90Vdc,V
GS =0Vdc)
IDSS — — 20 Adc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D= 640 Adc)
VGS(th) 1.0 1.8 2.7 Vdc
Gate Quiescent Voltage
(VDD =50Vdc,I
D= 100 mAdc, Measured in Functional Test)
VGS(Q) 2.0 2.4 3.0 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.58Adc)
VDS(on) 0.1 0.25 0.3 Vdc
Dynamic Characteristics (1)
Reverse Transfer Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —1.2 —pF
Output Capacitance
(VDS =50Vdc30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —58 —pF
Input Capacitance
(VDS =50Vdc,V
GS =0Vdc30 mV(rms)ac @ 1 MHz)
Ciss —340 —pF
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 100 mA, Pout = 250 W Peak (25 W Avg.), f = 1300 MHz
Pulse, 200 sec Pulse Width, 10% Duty Cycle
Power Gain Gps 21.5 22.7 24.0 dB
Drain Efficiency D53.5 57.0 — %
Input Return Loss IRL —-- 1 8 -- 9 dB
Typical CW Performance (In Freescale CW Application Circuit, 50 ohm system) VDD =50Vdc,I
DQ =10mA,P
out = 230 W CW, f = 1300 MHz,
TC=61C
Power Gain Gps —20.0 —dB
Drain Efficiency D—53.0 — %
Input Return Loss IRL —-- 2 5 —dB
Load Mismatch (In Freescale Application Test Fixture, 50 ohm system) VDD =50Vdc,I
DQ = 100 mA, Pout = 250 W Peak (25 W Avg.),
f = 1300 MHz, Pulse, 200 sec Pulse Width, 10% Duty Cycle
VSWR 10:1 at all Phase Angles No Degradation in Output Power
1. Part internally input matched.
MMRF1005HR5 MMRF1005HSR5
3
RF Device Data
Freescale Semiconductor
Figure 1. MMRF1005HR5(HSR5) Test Circuit Schematic — 1300 MHz, Pulse
Z11 0.162x 1.160Microstrip
Z12 0.419x 1.160Microstrip
Z13 0.468x 0.994Microstrip
Z14 0.131x 0.472Microstrip
Z15 0.264x 0.222Microstrip
Z16 0.500x0.111Microstrip
Z17 0.291x 0.063Microstrip
Z18, Z20 0.105x 0.388Microstrip
Z19*, Z21* 0.854x 0.052Microstrip
*Line length includes microstrip bends.
Z1 0.447x 0.063Microstrip
Z2 0.030x 0.084Microstrip
Z3 0.120x 0.063Microstrip
Z4 0.855x 0.293Microstrip
Z5 0.369x 0.825Microstrip
Z6 0.203x 0.516Microstrip
Z7 0.105x 0.530Microstrip
Z8 0.105x 0.530Microstrip
Z9* 0.116x 0.050Microstrip
Z10 0.122x 0.050Microstrip
Z1
RF
INPUT
C5
Z2 Z4
DUT
C6
RF
OUTPUT
VBIAS VSUPPLY
C2 C7 C8
Z3
C12
+
Z5
C3
Z16Z15Z14Z13Z12Z11
Z8Z7Z6
Z9
Z18
R1
C1
Z20
Z17
C4 C9
Z19
C10 C11
VSUPPLY
C18 C17 C13
+
C16
Z21
C15 C14
Z10
++
Table 5. MMRF1005HR5(HSR5) Test Circuit Component Designations and Values — 1300 MHz, Pulse
Part Description Part Number Manufacturer
C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C3,C11,C14 0.1 F, 50 V Chip Capacitors CDR33BX104AKWS AVX
C4, C6, C7, C18 100 pF Chip Capacitors ATC800B101JT500XT ATC
C5 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC
C8, C17 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C9, C16 1000 pF Chip Capacitors ATC700B102FT50XT ATC
C10, C15 10K pF Chip Capacitors ATC200B103KT50XT ATC
C12, C13 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
R1 15 , 1/4 W Chip Resistor CRCW120615R0FKEA Vishay
PCB Rogers RO4350B, 0.030,r=3.66 —MTL
4
RF Device Data
Freescale Semiconductor
MMRF1005HR5 MMRF1005HSR5
Figure 2. MMRF1005HR5(HSR5) Test Circuit Component Layout — 1300 MHz, Pulse
CUT OUT AREA
C5
R1
C3 C4
C1 C2
C6
C13
C15C17
C16
C18
C14
C12
C9C7 C11
C10C8
MMRF1005HR5 MMRF1005HSR5
5
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS — PULSE
D, DRAIN EFFICIENCY (%)
50
1
1000
02010
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
30
Ciss
100
10
40
Coss
Crss
Measured with 30 mV(rms)ac @ 1 MHz
VGS =0Vdc
53
60
30
59
58
Pin, INPUT POWER (dBm) PEAK
Figure 4. Output Power versus Input Power
57
3731 32 33 34 35
Pout, OUTPUT POWER (dBm) PULSED
Actual
Ideal
P1dB = 54.7 dBm
(293 W)
56
36
VDD =50Vdc,I
DQ = 100 mA, f = 1300 MHz
Pulse Width = 200 sec, Duty Cycle = 10%
P2dB = 55.1 dBm
(326 W)
P3dB = 55.4 dBm
(345 W)
55
54
24
1
0
70
10
22
20
18
60
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 5. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
21
19
17
500
20
Figure 6. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
Gps, POWER GAIN (dB)
VDD =50V
11
25
0
15
25 V
21
35 V
100 200 300 350 400
40 V
30 V
100
10 13
17
VDD =50Vdc,I
DQ = 100 mA, f = 1300 MHz
Pulse Width = 200, sec Duty Cycle = 10%
IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 sec
Duty Cycle = 10%
23
D
Gps
23
19
50 150 250
45 V
20 V
Figure 7. Efficiency versus Output Power
Pout, OUTPUT POWER (WATTS) PEAK
VDD =50V
10
70
0
30
25 V
50
35 V
100 200 300 350 400
40 V
30 V
20
40
IDQ = 100 mA, f = 1300 MHz
Pulse Width = 200 sec
Duty Cycle = 10%
60
50 150 250
45 V
20 V
24
3
0
70
100
21
19
18
50
40
30
Pout, OUTPUT POWER (WATTS) PEAK
Figure 8. Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
20
17
500
25_C
TC=--30_C
85_C
20
Gps
22
23
10
60
10
VDD =50Vdc
IDQ = 100 mA
f = 1300 MHz
Pulse Width = 200 sec
Duty Cycle = 10%
25_C
85_C
-- 3 0 _C
D
6
RF Device Data
Freescale Semiconductor
MMRF1005HR5 MMRF1005HSR5
TYPICAL CHARACTERISTICS — CW
25
20
60
23
21
17
55
45
40
35
25
20
Pout, OUTPUT POWER (WATTS) CW
Figure 9. CW Power Gain and Drain Efficiency
versus Output Power
Gps, POWER GAIN (dB)
D, DRAIN EFFICIENCY (%)
22
19
16
100 280
VDD =50Vdc
f = 1300 MHz
TC=61C(1)
15
18
20
250
109
90
TJ, JUNCTION TEMPERATURE (C)
Figure 10. MTTF versus Junction Temperature — CW
MTTF calculator available at http://www.freescale.com/rf/calculators.
108
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
30
50
107
105
24
40 60 80 120 140 160 180 200 220 240 260
IDQ = 700 mA
300 mA
10 mA
Gps
D
10 mA
300 mA
700 mA
1. Data for graph was collected in a water--cooled test
fixture. The water inlet temperature = 25C.
VDD =50Vdc
Pout = 230 W CW
D= 53%
MMRF1005HR5 MMRF1005HSR5
7
RF Device Data
Freescale Semiconductor
Zo=10
Zload
f = 1300 MHz
Zsource
f = 1300 MHz
VDD =50Vdc,I
DQ = 100 mA, Pout = 250 W Peak
f
MHz
Zsource
Zload
1300 5.32 + j4.11 1.17 + j1.48
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 11. Series Equivalent Source and Load Impedance — Pulse
Zsource Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
8
RF Device Data
Freescale Semiconductor
MMRF1005HR5 MMRF1005HSR5
Figure 12. MMRF1005HR5(HSR5) Application Circuit Schematic — 1300 MHz, CW
Z11 0.162x 1.160Microstrip
Z12 0.419x 1.160Microstrip
Z13 0.468x 0.994Microstrip
Z14 0.131x 0.472Microstrip
Z15 0.264x 0.222Microstrip
Z16 0.500x0.111Microstrip
Z17 0.291x 0.063Microstrip
Z18, Z20 0.105x 0.388Microstrip
Z19*, Z21* 0.854x 0.052Microstrip
*Line length includes microstrip bends.
Z1 0.447x 0.063Microstrip
Z2 0.030x 0.084Microstrip
Z3 0.120x 0.063Microstrip
Z4 0.855x 0.293Microstrip
Z5 0.369x 0.825Microstrip
Z6 0.203x 0.516Microstrip
Z7 0.105x 0.530Microstrip
Z8 0.105x 0.530Microstrip
Z9* 0.116x 0.050Microstrip
Z10 0.122x 0.050Microstrip
Z1
RF
INPUT
C5
Z2 Z4
DUT
C6
RF
OUTPUT
VBIAS VSUPPLY
C2 C8 C9
Z3
C13
+
Z5
C3
Z16Z15Z14Z13Z12Z11
Z8Z7Z6
Z9
Z18
R1
C1
Z20
Z17
C4 C10
Z19
C11 C12
VSUPPLY
C19 C18 C14
+
C17
Z21
C16 C15
Z10
++
C7
Table 6. MMRF1005HR5(HSR5) Application Circuit Component Designations and Values — 1300 MHz, CW
Part Description Part Number Manufacturer
C1, C2 22 F, 35 V Tantalum Capacitors T491X226K035AT Kemet
C3, C12, C15 0.1 F, 50 V Chip Capacitors CDR33BX104AKWS AVX
C4, C6, C7, C8, C19 100 pF Chip Capacitors ATC800B101JT500XT ATC
C5 4.7 pF Chip Capacitor ATC100B4R7CT500XT ATC
C9, C18 1000 pF Chip Capacitors ATC100B102JT50XT ATC
C10, C17 1000 pF Chip Capacitors ATC700B102FT50XT ATC
C11, C16 10K pF Chip Capacitors ATC200B103KT50XT ATC
C13, C14 470 F, 63 V Electrolytic Capacitors MCGPR63V477M13X26--RH Multicomp
R1 15 , 1/4 W Chip Resistor CRCW120615R0FKEA Vishay
PCB Rogers RO4350B, 0.030,r=3.66 —MTL
MMRF1005HR5 MMRF1005HSR5
9
RF Device Data
Freescale Semiconductor
Figure 13. MMRF1005HR5(HSR5) Application Circuit Component Layout — 1300 MHz, CW
CUT OUT AREA
C5
R1
C3 C4
C1 C2
C6
C14
C16C18
C17
C19
C15
C13
C10C8 C12
C11C9
C7
10
RF Device Data
Freescale Semiconductor
MMRF1005HR5 MMRF1005HSR5
PACKAGE DIMENSIONS
MMRF1005HR5 MMRF1005HSR5
11
RF Device Data
Freescale Semiconductor
12
RF Device Data
Freescale Semiconductor
MMRF1005HR5 MMRF1005HSR5
MMRF1005HR5 MMRF1005HSR5
13
RF Device Data
Freescale Semiconductor
14
RF Device Data
Freescale Semiconductor
MMRF1005HR5 MMRF1005HSR5
PRODUCT DOCUMENTATION
Refer to the following resources to aid your design process.
Application Notes
AN1955: Thermal Measurement Methodology of RF Power Amplifiers
Engineering Bulletins
EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0Dec. 2013 Initial Release of Data Sheet
1Apr. 2015 Tables 5 and 6, Test Circuit Component Designations and Values: updated PCB description to reflect most
current board specifications from Rogers, pp. 3, 8
Added CW application circuit for 1300 MHz as follows: schematic, component designations and values,
and component layout, pp. 8--9
MMRF1005HR5 MMRF1005HSR5
15
RF Device Data
Freescale Semiconductor
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc.,
Reg. U.S. Pat. & Tm. Off. All other product or service names are the property of their
respective owners.
E2013, 2015 Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Document Number: MMRF1005H
Rev. 1, 4/2015
