MTP12P10
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage (VGS = 0, ID = 0.25 mA) V(BR)DSS 100 − Vdc
Zero Gate Voltage Drain Current
(VDS = Rated VDSS, VGS = 0)
(VDS = Rated VDSS, VGS = 0, TJ = 125°C)
IDSS −
−10
100
mAdc
Gate−Body Leakage Current, Forward (VGSF = 20 Vdc, VDS = 0) IGSSF − 100 nAdc
Gate−Body Leakage Current, Reverse (VGSR = 20 Vdc, VDS = 0) IGSSR − 100 nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA)
TJ = 100°CVGS(th) 2.0
1.5 4.5
4.0 Vdc
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 6.0 Adc) RDS(on) − 0.3 W
Drain−Source On−Voltage (VGS = 10 V)
(ID = 12 Adc)
(ID = 6.0 Adc, TJ = 100°C)
VDS(on) −
−4.2
3.8
Vdc
Forward Transconductance (VDS = 15 V, ID = 6.0 A) gFS 2.0 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance (VDS = 25 V, VGS = 0, f = 1.0 MHz)
See Figure 10
Ciss − 920 pF
Output Capacitance Coss − 575
Reverse Transfer Capacitance Crss − 200
SWITCHING CHARACTERISTICS (Note 1) (TJ = 100°C)
T urn−On Delay Time
(VDD = 25 V, ID = 0.5 Rated ID, RG = 50 W)
See Figures 12 and 13
td(on) − 50 ns
Rise Time tr− 150
Turn−Off Delay Time td(off) − 150
Fall Time tf− 150
Total Gate Charge (VDS = 0.8 Rated VDSS, ID = Rated ID, VGS = 10 V
See Figure 11
Qg33 (Typ) 50 nC
Gate−Source Charge Qgs 16 (Typ) −
Gate−Drain Charge Qgd 17 (Typ) −
SOURCE−DRAIN DIODE CHARACTERISTICS (Note 1)
Forward On−Voltage
(IS = Rated ID, VGS = 0)
VSD 4.0 (Typ) 5.5 Vdc
Forward T urn−On Time ton Limited by stray inductance
Reverse Recovery Time trr 300
(Typ) − ns
INTERNAL PACKAGE INDUCTANCE (TO−204)
Internal Drain Inductance, (Measured from the contact screw on the header closer to the
source pin and the center of the die) Ld5.0 (Typ) −nH
Internal Source Inductance
(Measured from the source pin, 0.25″ from the package
to the source bond pad)
Ls12.5
(Typ) −
INTERNAL PACKAGE INDUCTANCE (TO−220)
Internal Drain Inductance
(Measured from the contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Ld3.5 (Typ)
4.5 (Typ) −
−
nH
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad) Ls7.5 (Typ) −
1. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.