NTJD4105C Small Signal MOSFET 20 V / -8.0 V, Complementary, +0.63 A / -0.775 A, SC-88 Features * * * * * Complementary N and P Channel Device Leading -8.0 V Trench for Low RDS(on) Performance ESD Protected Gate - ESD Rating: Class 1 SC-88 Package for Small Footprint (2 x 2 mm) Pb-Free Packages are Available http://onsemi.com V(BR)DSS RDS(on) TYP 0.29 W @ 4.5 V N-Ch 20 V 0.63 A 0.36 W @ 2.5 V Applications * * * * ID Max DC-DC Conversion Load/Power Switching Single or Dual Cell Li-Ion Battery Supplied Devices Cell Phones, MP3s, Digital Cameras, PDAs 0.22 W @ -4.5 V P-Ch -8.0 V -0.775 A 0.32 W @ -2.5 V 0.51 W @ -1.8 V MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter N-Ch Drain-to-Source Voltage Symbol Value Unit VDSS 20 V P-Ch N-Ch Gate-to-Source Voltage -8.0 VGS P-Ch Continuous Drain Current - Steady State (Based on RqJA) N-Ch Continuous Drain Current - Steady State (Based on RqJL) N-Ch P-Ch P-Ch TA = 25C 12 V 8.0 ID 0.63 TA = 85C 0.46 TA = 25C -0.775 TA = 85C -0.558 TA = 25C 0.91 TA = 85C 0.65 TA = 25C -1.1 TA = 85C -0.8 tp 10 ms IDM 1.2 A TA = 25C PD 0.27 W TA = 85C 0.14 Power Dissipation - Steady State (Based on RqJL) TA = 25C 0.55 TA = 85C 0.29 Source Current (Body Diode) N-Ch IS P-Ch Lead Temperature for Soldering Purposes (1/8" from case for 10 s) Junction-to-Lead (Drain) - Steady State Typ RqJA Max Typ -55 to 150 C 0.63 A 260 Max 400 C/W March, 2006 - Rev. 2 2 5 G2 D2 3 4 S2 MARKING DIAGRAM & PIN ASSIGNMENT 1 TC M G G SC-88/SOT-363 CASE 419B STYLE 28 1 S1 G1 D2 TC M G = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) 194 ORDERING INFORMATION 226 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq. (c) Semiconductor Components Industries, LLC, 2006 G1 C 460 RqJL D1 D1 G2 S2 THERMAL RESISTANCE RATINGS (Note 1) Junction-to-Ambient - Steady State 6 6 -0.775 TL 1 Top View Power Dissipation - Steady State (Based on RqJA) TJ, TSTG S1 A Pulsed Drain Current Operating Junction and Storage Temperature SOT-363 SC-88 (6-LEADS) 1 See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Publication Order Number: NTJD4105C/D NTJD4105C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Symbol N/P Drain-to-Source Breakdown Voltage V(BR)DSS Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS / TJ N P N Parameter Test Condition Min Typ 20 -8.0 27 -10.5 22 Max Units OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS = 0 V ID = 250 mA ID = -250 mA P N P N P V mV/ C -6.0 VGS = 0 V, VDS = 16 V VGS = 0 V, VDS = -6.4 V TJ = 25 C VDS = 0 V VGS = 12 V VGS = 8.0 VGS = VDS ID = 250 mA ID = -250 mA 1.0 1.0 10 10 mA 1.5 -1.0 V mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) Gate Threshold Temperature Coefficient VGS(TH) / TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance gFS N P N P N P N P P N P 0.6 -0.45 VGS = 4.5 V ID = 0.63 A VGS = -4.5 V, ID = -0.57 A VGS = 2.5 V, ID = 0.40 A VGS = -2.5 V, ID = -0.48 A VGS = -1.8 V, ID = -0.20 A VDS = 4.0 V ID = 0.63 A VDS = -4.0 V, ID = -0.57 A 0.92 -0.83 -2.1 2.2 0.29 0.22 0.36 0.32 0.51 2.0 2.0 VDS = 20 V VDS = -8.0V VDS = 20 V f = 1 MHz, VGS = 0 V VDS = -8.0 V VDS = 20 V VDS = -8.0 V VGS = 4.5 V, VDS = 10 V, ID = 0.7 A VGS = -4.5 V, VDS = -5.0 V, ID = -0.6 A VGS = 4.5 V, VDS = 10 V, ID = 0.7 A VGS = -4.5 V, VDS = -5.0 V, ID = -0.6 A VGS = 4.5 V, VDS = 10 V, ID = 0.7 A VGS = -4.5 V, VDS = -5.0 V, ID = -0.6 A VGS = 4.5 V, VDS = 10 V, ID = 0.7 A VGS = -4.5 V, VDS = -5.0 V, ID = -0.6 A 33 160 13 38 2.8 28 1.3 2.2 0.1 0.1 0.2 0.5 0.4 0.5 -mV/ C 0.375 0.30 0.445 0.46 0.90 W S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD N P N P N P N P N P N P N P 46 225 22 55 5.0 40 3.0 4.0 pF nC SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf td(ON) tr td(OFF) tf N VGS = 4.5 V, VDD = 10 V, ID = 0.5 A, RG = 20 W P VGS = -4.5 V, VDD = -4.0 V, ID = -0.5 A, RG = 8.0 W ms 0.083 0.227 0.786 0.506 0.013 0.023 0.050 0.036 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD tRR N P N P N P VGS = 0 V, TJ = 25C VGS = 0 V, TJ = 125C VGS = 0 V, dIS/dt = 90 A/ms 2. Pulse Test: pulse width 300 ms, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 IS = 0.23 A IS = -0.23 A IS = 0.23 A IS = -0.23 A IS = 0.23 A IS = -0.23 A 0.76 0.76 0.63 0.63 0.410 0.078 1.1 1.1 V ms NTJD4105C TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS = 4.5 V to 2.2 V 1.2 VDS 10 V ID, DRAIN CURRENT (AMPS) VGS = 2 V 1.8 V 1 0.8 1.6 V 0.6 0.4 1.4 V 0.2 0.7 1 0.8 0.6 0.4 TJ = 125C 0.2 25C 1.2 V 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.2 TJ = 25C 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0 0.4 0.8 1.2 2 1.6 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS = 4.5 V 0.6 0.5 TJ = 125C 0.4 TJ = 25C 0.3 TJ = -55C 0.2 0.1 0 0 TJ = -55C 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 1.4 0.4 1 0.8 0.6 ID, DRAIN CURRENT (AMPS) 0.2 1.2 1.4 0.7 TJ = 125C 0.5 0.4 TJ = 25C 0.3 TJ = -55C 0.2 0.1 0 0 0.2 0.6 0.4 1 0.8 ID, DRAIN CURRENT (AMPS) 1.4 80 ID = 0.63 A VGS = 4.5 V and 2.5 V TJ = 25C C, CAPACITANCE (pF) VGS = 0 V 1.6 1.4 1.2 1 60 40 Ciss 20 Coss 0.8 0.6 -50 1.2 Figure 4. On-Resistance vs. Drain Current and Temperature 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) VGS = 2.5 V 0.6 Figure 3. On-Resistance vs. Drain Current and Temperature 1.8 2.4 Crss -25 0 25 50 75 100 125 150 0 0 5 10 15 TJ, JUNCTION TEMPERATURE (C) DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTJD4105C 5 0.7 QG(TOT) 4 IS, SOURCE CURRENT (AMPS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL N-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS 3 QGS 2 1 0 QGD ID = 0.63 A TJ = 25C 0 0.2 0.4 0.6 0.8 1 Qg, TOTAL GATE CHARGE (nC) 1.2 VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150C 0.1 TJ = 25C 0 1.4 0 0.2 0.4 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 8. Diode Forward Voltage vs. Current http://onsemi.com 4 1 NTJD4105C TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS = -4.5 V to -2.6 V VGS = -2.2 V -2 V -1.8 V 1 0.8 -1.6 V 0.6 0.4 -1.4 V 0.2 -1.2 V 0 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) -ID, DRAIN CURRENT (AMPS) 1.2 1.4 TJ = 25C 0.5 2 4 6 VDS -10 V 1.2 1 0.8 0.6 TJ = 125C 0.4 25C 0.2 TJ = -55C 0 8 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 1.6 0.4 0.8 1.2 2 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 9. On-Region Characteristics Figure 10. Transfer Characteristics 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) -ID, DRAIN CURRENT (AMPS) 1.4 VGS = -4.5 V 0.4 0.3 TJ = 125C TJ = 25C 0.2 TJ = -55C 0.1 0 0.2 0 0.6 0.8 0.4 1 -ID, DRAIN CURRENT (AMPS) 1.2 1.4 0.5 VGS = -2.5 V TJ = 125C 0.4 TJ = 25C 0.3 TJ = -55C 0.2 0.1 0 0 0.6 0.4 0.8 1 -ID, DRAIN CURRENT (AMPS) 300 ID = -0.7 A VGS = -4.5 V and -2.5 V C, CAPACITANCE (pF) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.2 1 0.8 0.6 -50 0.2 -25 0 25 50 75 100 125 1.2 1.4 Figure 12. On-Resistance vs. Drain Current and Temperature Figure 11. On-Resistance vs. Drain Current and Temperature 1.4 2.4 150 TJ = 25C VGS = 0 V 240 Ciss 180 120 Coss 60 0 -8 Crss -6 -4 -2 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 13. On-Resistance Variation with Temperature Figure 14. Capacitance Variation http://onsemi.com 5 0 NTJD4105C 5 0.7 QG(TOT) 4 -IS, SOURCE CURRENT (AMPS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) TYPICAL P-CHANNEL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) VGS 3 QGS 2 1 0 QGD ID = -0.6 A TJ = 25C 0 0.4 0.8 1.2 1.6 2 Qg, TOTAL GATE CHARGE (nC) VGS = 0 V 0.6 0.5 0.4 0.3 0.2 TJ = 150C 0.1 TJ = 25C 0 2.4 0 0.2 0.4 0.6 0.8 -VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 15. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge Figure 16. Diode Forward Voltage vs. Current http://onsemi.com 6 1 NTJD4105C ORDERING INFORMATION Package Shipping NTJD4105CT1 SOT-363 3000 / Tape & Reel NTJD4105CT1G SOT-363 (Pb-Free) 3000 / Tape & Reel NTJD4105CT2 SOT-363 3000 / Tape & Reel NTJD4105CT2G SOT-363 (Pb-Free) 3000 / Tape & Reel NTJD4105CT4 SOT-363 10,000 / Tape & Reel NTJD4105CT4G SOT-363 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 7 NTJD4105C PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. D e MILLIMETERS DIM MIN NOM MAX A 0.80 0.95 1.10 A1 0.00 0.05 0.10 A3 0.20 REF b 0.10 0.21 0.30 C 0.10 0.14 0.25 D 1.80 2.00 2.20 E 1.15 1.25 1.35 e 0.65 BSC L 0.10 0.20 0.30 HE 2.00 2.10 2.20 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 A3 6 5 4 HE C -E- 1 2 3 L b 6 PL 0.2 (0.008) M E M A INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 SOLDERING FOOTPRINT* A1 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTJD4105C/D