NTJD4105CT1G - ON SEMICONDUCTOR - Datasheet.Directory

March, 2006 − Rev. 2

1Publication Order Number:

NTJD4105C/D

NTJD4105C

Small Signal MOSFET

20 V / −8.0 V, Complementary,

+0.63 A / −0.775 A, SC−88

Features

•Complementary N and P Channel Device

•Leading −8.0 V Trench for Low RDS(on) Performance

•ESD Protected Gate − ESD Rating: Class 1

•SC−88 Package for Small Footprint (2 x 2 mm)

•Pb−Free Packages are Available

Applications

•DC−DC Conversion

•Load/Power Switching

•Single or Dual Cell Li−Ion Battery Supplied Devices

•Cell Phones, MP3s, Digital Cameras, PDAs

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit

Drain−to−Source Voltage N−Ch VDSS 20 V

P−Ch −8.0

Gate−to−Source Voltage N−Ch VGS ±12 V

P−Ch ±8.0

Continuous Drain Current

− Steady State

(Based on RqJA)

N−Ch TA = 25°CID0.63 A

TA = 85°C 0.46

P−Ch TA = 25°C−0.775

TA = 85°C−0.558

Continuous Drain Current

− Steady State

(Based on RqJL)

N−Ch TA = 25°C 0.91

TA = 85°C 0.65

P−Ch TA = 25°C−1.1

TA = 85°C−0.8

Pulsed Drain Current tp ≤10 msIDM ±1.2 A

Power Dissipation − Steady State

(Based on RqJA)

TA = 25°CPD0.27 W

TA = 85°C 0.14

Power Dissipation − Steady State

(Based on RqJL)

TA = 25°C 0.55

TA = 85°C 0.29

Operating Junction and Storage Temperature TJ,

TSTG

−55 to

150

°C

Source Current (Body Diode) N−Ch IS0.63 A

P−Ch −0.775

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

TL260 °C

THERMAL RESISTANCE RATINGS (Note 1)

Junction−to−Ambient

– Steady State

Typ RqJA 400 °C/W

Max 460

Junction−to−Lead (Drain)

– Steady State

Typ RqJL 194

Max 226

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface mounted on FR4 board using 1 oz Cu area = 0.9523 in sq.

MARKING DIAGRAM &

PIN ASSIGNMENT

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V(BR)DSS RDS(on) TYP ID Max

N−Ch 20 V 0.29 W @ 4.5 V

0.36 W @ 2.5 V 0.63 A

TC MG

TC = Device Code

M = Date Code

G = Pb−Free Package

D1 G2 S2

S1 G1 D2

(Note: Microdot may be in either location)

P−Ch −8.0 V

0.22 W @ −4.5 V

0.32 W @ −2.5 V

0.51 W @ −1.8 V

−0.775 A

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

Top View

SOT−363

SC−88 (6−LEADS)

SC−88/SOT−363

CASE 419B

STYLE 28

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol N/P Test Condition Min Typ Max Units

OFF CHARACTERISTICS

Drain−to−Source

Breakdown Voltage

V(BR)DSS NVGS = 0 V ID = 250 mA20 27 V

PID = −250 mA−8.0 −10.5

Drain−to−Source Breakdown

Voltage Temperature Coeffi-

cient

V(BR)DSS

/ TJ

N 22 mV/ °C

P−6.0

Zero Gate Voltage Drain Cur-

rent

IDSS N VGS = 0 V, VDS = 16 V TJ = 25 °C1.0 mA

P VGS = 0 V, VDS = −6.4 V 1.0

Gate−to−Source

Leakage Current

IGSS NVDS = 0 V VGS = ±12 V 10 mA

P VGS = ±8.0 10

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage VGS(TH) NVGS = VDS

ID = 250 mA0.6 0.92 1.5 V

PID = −250 mA−0.45 −0.83 −1.0

Gate Threshold

Temperature Coefficient

VGS(TH) /

N−2.1 −mV/ °C

P 2.2

Drain−to−Source On Resist-

ance

RDS(on) N VGS = 4.5 V ID = 0.63 A 0.29 0.375 W

P VGS = −4.5 V, ID = −0.57 A 0.22 0.30

N VGS = 2.5 V, ID = 0.40 A 0.36 0.445

P VGS = −2.5 V, ID = −0.48 A 0.32 0.46

P VGS = −1.8 V, ID = −0.20 A 0.51 0.90

Forward Transconductance gFS N VDS = 4.0 V ID = 0.63 A 2.0 S

P VDS = −4.0 V, ID = −0.57 A 2.0

CHARGES AND CAPACITANCES

Input Capacitance CISS N

f = 1 MHz, VGS = 0 V

VDS = 20 V 33 46 pF

P VDS = −8.0V 160 225

Output Capacitance COSS N VDS = 20 V 13 22

P VDS = −8.0 V 38 55

Reverse Transfer Capacitance CRSS N VDS = 20 V 2.8 5.0

P VDS = −8.0 V 28 40

Total Gate Charge QG(TOT) N VGS = 4.5 V, VDS = 10 V, ID = 0.7 A 1.3 3.0 nC

P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 2.2 4.0

Threshold Gate Charge QG(TH) N VGS = 4.5 V, VDS = 10 V, I D = 0.7 A 0.1

P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 0.1

Gate−to−Source Charge QGS N VGS = 4.5 V, VDS = 10 V, I D = 0.7 A 0.2

P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 0.5

Gate−to−Drain Charge QGD N VGS = 4.5 V, VDS = 10 V, I D = 0.7 A 0.4

P VGS = −4.5 V, VDS = −5.0 V, ID = −0.6 A 0.5

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time td(ON) N

VGS = 4.5 V, VDD = 10 V,

ID = 0.5 A, RG = 20 W

0.083 ms

Rise Time tr0.227

Turn−Off Delay Time td(OFF) 0.786

Fall Time tf0.506

Turn−On Delay Time td(ON) P

VGS = −4.5 V, VDD = −4.0 V,

ID = −0.5 A, RG = 8.0 W

0.013

Rise Time tr0.023

Turn−Off Delay Time td(OFF) 0.050

Fall Time tf0.036

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage VSD NVGS = 0 V, TJ = 25°CIS = 0.23 A 0.76 1.1 V

P IS = −0.23 A 0.76 1.1

NVGS = 0 V, TJ = 125°CIS = 0.23 A 0.63

P IS = −0.23 A 0.63

Reverse Recovery Time tRR NVGS = 0 V,

dIS/dt = 90 A/ms

IS = 0.23 A 0.410 ms

P IS = −0.23 A 0.078

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperatures.

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TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

1.4

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

ID, DRAIN CURRENT (AMPS)

0.6

0.2

Figure 1. On−Region Characteristics

0.4

1.2

21.2 2.4

0.6

0.2

0.8

Figure 2. Transfer Characteristics

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

0.4 1

0.3

0.2

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Temperature

−50 0−25 25

1.4

1.2

0.8

0.6

50 125100

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.7

0.2 0.6

TJ = −55°C

TJ = 125°C

75 150

ID = 0.63 A

VGS = 4.5 V

and 2.5 V

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

25°C

1.2 V

0 1.4

Figure 6. Capacitance Variation

1.4 V

1.6 V

1.8 V

108

VDS ≥ 10 V

0.4

VGS = 2 V

VGS = 4.5 V to 2.2 V

0.4

0.8

1.2

0.8

0.4

1.6

TJ = 125°C

1.20.8

VGS = 4.5 V

TJ = −55°C

TJ = 25°C

0.1

0.4 1

0.3

0.2

ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.7

0.2 0.6

TJ = 125°C

0 1.4

0.4

1.20.8

VGS = 2.5 V

TJ = −55°C

TJ = 25°C

VGS = 0 V

100

DRAIN−TO−SOURCE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

TJ = 25°C

Coss

Ciss

Crss

52015

0.6

0.5 0.5

0.6

1.8

1.6

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TYPICAL N−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VGS

Figure 7. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

0 0.6

Figure 8. Diode Forward Voltage vs. Current

Qg, TOTAL GATE CHARGE (nC)

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID = 0.63 A

TJ = 25°C

10.8

0.40.2 1.4 0.8

0.1

VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

IS, SOURCE CURRENT (AMPS)

VGS = 0 V

0.7

0.60.40

0.4

0.5

0.6

0.2

0.3

10.2

TJ = 25°C

TJ = 150°C

1.2

QG(TOT)

QGS QGD

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TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

1.4

−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

−ID, DRAIN CURRENT (AMPS)

0.6

0.2

Figure 9. On−Region Characteristics

0.4

1.4

21.2 2.4

0.6

0.2

0.8

Figure 10. Transfer Characteristics

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

0.1

0.4 1

0.3

0.2

Figure 11. On−Resistance vs. Drain Current

and Temperature

−ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

−ID, DRAIN CURRENT (AMPS)

Figure 12. On−Resistance vs. Drain Current

and Temperature

−50 0−25 25

1.4

1.2

0.8

0.6

50 125100

Figure 13. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

TJ = 25°C

0.5

0.2 0.6

TJ = −55°C

TJ = 125°C

75 150

ID = −0.7 A

VGS = −4.5 V

and −2.5 V

RDS(on), DRAIN−TO−SOURCE

RESISTANCE (NORMALIZED)

25°C

1.6

−1.2 V

0 1.4

Figure 14. Capacitance Variation

−1.4 V

−1.6 V

−1.8 V

−2 V

VDS ≥ −10 V

0.4

VGS = −2.2 V

VGS = −4.5 V to −2.6 V

0.4

0.8

1.2 1.2

0.8

0.4

1.6

TJ = 125°C

1.20.8

VGS = −4.5 V

TJ = −55°C

TJ = 25°C

0.1

0.4 1

0.3

0.2

−ID, DRAIN CURRENT (AMPS)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

0.5

0.2 0.6

TJ = 125°C

0 1.4

0.4

1.20.8

VGS = −2.5 V

TJ = −55°C

TJ = 25°C

VGS = 0 V

−4−8

300

180

120

GATE−TO−SOURCE OR DRAIN−TO−SOURCE

VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

TJ = 25°C

Coss

Ciss

Crss

240

−60−2

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TYPICAL P−CHANNEL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)

VGS

Figure 15. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

0 1.2

Figure 16. Diode Forward Voltage vs. Current

Qg, TOTAL GATE CHARGE (nC)

−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

ID = −0.6 A

TJ = 25°C

21.6

QGS

0.80.4 2.4 0.8

0.1

−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)

−IS, SOURCE CURRENT (AMPS)

VGS = 0 V

0.7

0.60.40

0.4

0.5

0.6

0.2

0.3

10.2

TJ = 25°C

TJ = 150°C

QG(TOT)

QGD

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ORDERING INFORMATION

Device Package Shipping†

NTJD4105CT1 SOT−363 3000 / Tape & Reel

NTJD4105CT1G SOT−363

(Pb−Free)

3000 / Tape & Reel

NTJD4105CT2 SOT−363 3000 / Tape & Reel

NTJD4105CT2G SOT−363

(Pb−Free)

3000 / Tape & Reel

NTJD4105CT4 SOT−363 10,000 / Tape & Reel

NTJD4105CT4G SOT−363

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.

E0.2 (0.008) MM

123

654

−E−

b6 PL

SC−88/SC70−6/SOT−363

CASE 419B−02

ISSUE W

DIM MIN NOM MAX

MILLIMETERS

A0.80 0.95 1.10

A1 0.00 0.05 0.10

b0.10 0.21 0.30

C0.10 0.14 0.25

D1.80 2.00 2.20

0.031 0.037 0.043

0.000 0.002 0.004

0.004 0.008 0.012

0.004 0.005 0.010

0.070 0.078 0.086

MIN NOM MAX

INCHES

0.20 REF 0.008 REF

E1.15 1.25 1.35

e0.65 BSC

L0.10 0.20 0.30

2.00 2.10 2.20

0.045 0.049 0.053

0.026 BSC

0.004 0.008 0.012

0.078 0.082 0.086

ǒmm

inchesǓ

SCALE 20:1

0.65

0.025

0.65

0.025

0.50

0.0197

0.40

0.0157

1.9

0.0748

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 26:

PIN 1. SOURCE 1

2. GATE 1

3. DRAIN 2

4. SOURCE 2

5. GATE 2

6. DRAIN 1

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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

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