1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
[1] When switched from IF= 10 mA to IR=10mA; R
L= 100 Ω; measured at IR=1mA.
BAV99 series
High-speed switching diodes
Rev. 07 — 14 April 2010 Product data sheet
Table 1. Product overview
Type number Package Configuration Package
configuration
NXP JEITA JEDEC
BAV99 SOT23 - TO-236AB dual series small
BAV99S SOT363 SC-88 - quadruple; 2 series very small
BAV99W SOT323 SC-70 - dual series very small
High switching speed: trr 4ns Low capacitance: Cd1.5 pF
Low leakage current Reverse voltage: VR100 V
Small SMD plastic packages AEC-Q101 qualified
High-speed switching Reverse polarity protection
General-purpose switching
Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
IRreverse current VR=80V - - 0.5 μA
VRreverse voltage - - 100 V
trr reverse recovery time [1] --4ns
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 2 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
2. Pinning information
3. Ordering information
4. Marking
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Table 3. Pinning
Pin Description Simplified outline Graphic symbol
BAV99; BAV99W
1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 1),
anode (diode 2)
BAV99S
1 anode (diode 1)
2 cathode (diode 2)
3 cathode (diode 3),
anode (diode 4)
4 anode (diode 3)
5 cathode (diode 4)
6 cathode (diode 1),
anode (diode 2)
006aaa14
4
12
3
006aaa76
3
12
3
132
4
56
006aab10
1
13
6
2
54
Table 4. Or dering information
Type number Package
Name Description Version
BAV99 - plastic surface-mounted package; 3 leads SOT23
BAV99S SC-88 plastic surface-mounted package; 6 leads SOT363
BAV99W SC-70 plastic surface-mounted package; 3 leads SOT323
Table 5. Marking codes
Type number Marking code[1]
BAV99 A7*
BAV99S K1*
BAV99W A7*
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 3 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
5. Limiting values
[1] Single diode loaded.
[2] Double diode loaded.
[3] Tj=25°C prior to surge.
[4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[5] Soldering points at pins 2, 3, 5 and 6.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
VRRM repetitive peak reverse
voltage -100V
VRreverse voltage - 100 V
IFforward current
BAV99 [1] -215mA
[2] -125mA
BAV99S [1] -200mA
BAV99W [1] -150mA
[2] -130mA
IFRM repetitive peak forward
current -500mA
IFSM non-repetitive peak
forward current square wave [3]
tp=1μs-4A
tp=1ms - 1 A
tp=1s - 0.5 A
Ptot total power dissipation [1][4]
BAV99 Tamb 25 °C-250mW
BAV99S Tamb 85 °C[5] -250mW
BAV99W Tamb 25 °C-200mW
Per device
Tjjunction temperature - 150 °C
Tamb ambient temperature 65 +150 °C
Tstg storage temperature 65 +150 °C
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 4 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
6. Thermal characteristics
[1] Single diode loaded.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering points at pins 2, 3, 5 and 6.
7. Characteristics
[1] When switched from IF= 10 mA to IR=10mA; R
L= 100 Ω; measured at IR=1mA.
[2] When switched from IF=10mA; t
r=20ns.
Table 7. Thermal characteris tics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1][2]
BAV99 - - 500 K/W
BAV99W - - 625 K/W
Rth(j-sp) thermal resistance from
junction to solder point
BAV99 - - 360 K/W
BAV99S [3] - - 260 K/W
BAV99W - - 300 K/W
Table 8. Characteristics
Tamb =25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VFforward voltage IF= 1 mA - - 715 mV
IF= 10 mA - - 855 mV
IF=50mA --1V
IF=150mA --1.25V
IRreverse current VR=25V --30nA
VR=80V --0.5μA
VR=25V; T
j=150°C --30μA
VR=80V; T
j=150°C --50μA
Cddiode capacitance f = 1 MHz; VR=0V --1.5pF
trr reverse recovery time [1] --4ns
VFR forward recovery voltage [2] --1.75V
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 5 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
(1) Tamb = 150 °C
(2) Tamb =85°C
(3) Tamb =25°C
(4) Tamb =40 °C
(1) Tamb = 150 °C
(2) Tamb =85°C
(3) Tamb =25°C
(4) Tamb =40 °C
Fig 1. Forward current as a function of forward
voltage; typical values Fig 2. Reverse current as a function of reverse
voltage; typical values
f=1MHz; T
amb =25°C Based on square wave currents.
Tj=25°C; prior to surge
Fig 3. Diode capacitance as a function of reverse
voltage; typical values Fig 4. Non-repetitive peak for ward current as a
function of pulse duration; maximum val ues
006aab132
1
10
102
103
IF
(mA)
101
VF (V)
0 1.41.00.4 0.80.2 1.20.6
(1) (2) (3) (4)
006aab133
102
IR
(μA)
VR (V)
0 1008040 6020
10
1
101
102
103
104
105
(1)
(2)
(3)
(4)
0816124
0.8
0.6
0
0.4
0.2
mbg446
V
R
(V)
C
d
(pF)
mbg704
10
1
102
IFSM
(A)
101
tp (μs)
110
4
103
10 102
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 6 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in auto motive applications.
(1) IR=1mA
Input signal: reverse pulse rise time tr= 0.6 ns; reverse voltage pulse duration tp= 100 ns; duty cycle δ=0.05
Oscilloscope: rise time tr=0.35ns
Fig 5. Reverse recovery time test circuit and waveforms
Input signal: forward pulse rise time tr= 20 ns; forward current pulse duration tp100 ns; duty cycle δ≤0.005
Fig 6. Forward recovery voltage test circuit and waveforms
trr
(1)
+ I
F
t
output signal
t
r
t
p
t
10 %
90 %
V
R
input signal
V = V
R
+
I
F
×
R
S
R
S
= 50 ΩI
F
D.U.T.
R
i
= 50 Ω
SAMPLING
OSCILLOSCOPE
mga881
t
r
t
t
p
10 %
90 %
I
input signal
R
S
= 50 Ω
I
R
i
= 50 Ω
OSCILLOSCOPE
1 kΩ450 Ω
D.U.T.
mga88
2
VFR
t
output signal
V
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 7 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
Fig 7. Package outline BAV99 (SOT23/TO-236AB) Fig 8. Package outline BAV99S (SOT363/SC-88)
Fig 9. Package outline BAV99W (SOT323/SC-70)
04-11-04Dimensions in mm
0.45
0.15
1.9
1.1
0.9
3.0
2.8
2.5
2.1
1.4
1.2
0.48
0.38
0.15
0.09
12
3
06-03-16Dimensions in mm
0.25
0.10
0.3
0.2
pin 1
index
1.3
0.65
2.2
2.0
1.35
1.15
2.2
1.8
1.1
0.8
0.45
0.15
132
465
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packin g quantity
3000 10000
BAV99 SOT23 4 mm pitch, 8 mm tape and reel -215 -235
BAV99S SOT363 4 mm pitch, 8 mm tape and reel; T1 [2] -115 -135
4 mm pitch, 8 mm tape and reel; T2 [3] -125 -165
BAV99W SOT323 4 mm pitch, 8 mm tape and reel -115 -135
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 8 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
11. Soldering
Fig 10. Reflow soldering footprint BAV99 (SOT23/TO-236AB)
Fig 11. Wave soldering footprint BAV99 (SOT23/TO-236AB)
solder lands
solder resist
occupied area
solder paste
sot023_
fr
0.5
(3×)
0.6
(3×)
0.6
(3×)
0.7
(3×)
3
1
3.3
2.9
1.7
1.9
2
Dimensions in mm
solder lands
solder resist
occupied area
preferred transport direction during soldering
sot023_
fw
2.8
4.5
1.4
4.6
1.4
(2×)
1.2
(2×)
2.2
2.6
Dimensions in mm
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 9 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
Fig 12. Reflow soldering footprint BAV99S (SOT363/SC-88)
Fig 13. Wave soldering footprint BAV99S (SOT363/SC-88)
solder lands
solder resist
occupied area
solder paste
sot363_
fr
2.65
2.35 0.4 (2×)
0.6
(2×)
0.5
(4×)
0.5
(4×)
0.6
(4×)
0.6
(4×)
1.5
1.8
Dimensions in mm
sot363_
fw
solder lands
solder resist
occupied area
preferred transport
direction during soldering
5.3
1.3 1.3
1.5
0.3
1.5
4.5
2.45
2.5
Dimensions in mm
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 10 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
Fig 14. Reflow soldering footprint BAV99W (SOT323/SC-70)
Fig 15. Wave soldering footprint BAV99W (SOT323/SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_
fr
2.65
2.35 0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_f
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 11 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet statu s Change notice Supersedes
BAV99_SER_7 20100414 Product data sheet - BAV99_SER_6
Modifications: Section 1.2 “Features and benefits: updated
Section 8.1 “Quality information: added
Section 13 “Legal information: updated
BAV99_SER_6 20100310 Product data sheet - BAV99_SER_5
BAV99_SER_5 20080820 Product data sheet - BAV99_4
BAV99S_3
BAV99W_4
BAV99_4 2001101 5 Product specification - BAV99_3
BAV99S _3 20010514 Product specification - BAV99S_N_2
BAV99W_4 19990511 Product specification - BAV99W_3
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 12 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, th e
full data sheet shall pre va il.
Product specificat ionThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyon d those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect , incidental,
punitive, special or consequ ential damages (including - wit hout limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability toward s
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semicondu ctors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applicat ions where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury , death or severe property or environmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application /use or t he application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application ”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and t he
product. NXP Semiconductors does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter m s and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or the gr ant,
conveyance or implication of any license under any copyrights, patents or
other industrial or inte llectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulatio ns. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product develop ment.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BAV99_SER_7 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 07 — 14 April 2010 13 of 14
NXP Semiconductors BAV99 series
High-speed switching diodes
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to : salesaddresses@nxp.com
NXP Semiconductors BAV99 series
High-speed switching diodes
© NXP B.V. 2010. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 April 2010
Document identifier: BAV99_SER_ 7
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 6
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 7
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14