© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 3 1Publication Order Number:
BC847ATT1/D
BC847ATT1, BC847BTT1,
BC847CTT1
General Purpose
Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SC−75/SOT−416 package which
is designed for low power surface mount applications.
Features
•NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Max Unit
Collector−Emitter Voltage VCEO 45 V
Collector−Base Voltage VCBO 50 V
Emitter−Base Voltage VEBO 6.0 V
Collector Current − Continuous IC100 mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C
Derated above 25°C
PD200
1.6
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 1) RqJA 600 °C/W
Total Device Dissipation,
FR−4 Board (Note 2)
TA = 25°C
Derated above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient (Note 2) RqJA 400 °C/W
Junction and Storage
Temperature Range TJ, Tstg −55 to
+150 °C
1. FR−4 @ min pad.
2. FR−4 @ 1.0 × 1.0 in pad.
CASE 463
SC−75/SOT−416
STYLE 1
MARKING DIAGRAM
3
2
1
COLLECTOR
3
1
BASE
2
EMITTER
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XXMG
G
XX= Device Code
M = Date Code
G= Pb−Free Package
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
BC847ATT1, BC847BTT1, BC847CTT1
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown V oltage
(IC = 10 mA) BC847 Series V(BR)CEO 45 − − V
Collector−Emitter Breakdown V oltage
(IC = 10 mA, VEB = 0) BC847 Series V(BR)CES 50 − − V
Collector−Base Breakdown Voltage
(IC = 10 mA) BC847 Series V(BR)CBO 50 − − V
Emitter−Base Breakdown Voltage
(IE = 1.0 mA) BC847 Series V(BR)EBO 6.0 − − V
Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO −
−−
−15
5.0 nA
mA
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mA, VCE = 5.0 V) BC847A
BC847B
BC847C
(IC = 2.0 mA, VCE = 5.0 V) BC847A
BC847B
BC847C
hFE −
−
−
110
200
420
90
150
270
180
290
520
−
−
−
220
450
800
−
Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) −
−−
−0.25
0.6 V
Base−Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base−Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) −
−0.7
0.9 −
−V
Base−Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base−Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
−660
−700
770 mV
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 − − MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF
Noise Figure
(IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
BC847ATT1, BC847BTT1, BC847CTT1
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3
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base−Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
-55°C to +125°C
TA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
BC847ATT1, BC847BTT1, BC847CTT1
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4
BC847
Figure 5. Normalized Thermal Response
0.00001 0.0001 0.001 0.01 0.1 1.0 10 100 1000
0.001
0.01
0.1
1.0
r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE
t, TIME (s)
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 6. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
7.0
5.0
3.0
2.0
C, CAPACITANCE (pF)
0.8 4.0 8.0
TA = 25°C
Cob
Cib
Figure 7. Current−Gain − Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
80
100
200
300
400
60
20
40
30
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
BC847ATT1, BC847BTT1, BC847CTT1
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5
ORDERING INFORMATION
Device Marking Package Shipping†
BC847ATT1 1E SC−75/SOT−416 3,000 / Tape & Reel
BC847BTT1 1F SC−75/SOT−416 3,000 / Tape & Reel
BC847BTT1G 1F SC−75/SOT−416
(Pb−Free)
NSVBC847BTT1G* 1F SC−75/SOT−416
(Pb−Free) 3,000 / Tape & Reel
BC847CTT1G 1G SC−75/SOT−416
(Pb−Free) 3,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
BC847ATT1, BC847BTT1, BC847CTT1
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6
PACKAGE DIMENSIONS
SC−75/SOT−416
CASE 463
ISSUE F
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
M
0.20 (0.008) D
−E−
−D−
b
e
3 PL
0.20 (0.008) E
C
L
A
A1
3
2
1
HE
DIM MIN NOM MAX
MILLIMETERS
A0.70 0.80 0.90
A1 0.00 0.05 0.10
b
C0.10 0.15 0.25
D1.55 1.60 1.65
E
e1.00 BSC
0.027 0.031 0.035
0.000 0.002 0.004
0.004 0.006 0.010
0.059 0.063 0.067
0.04 BSC
MIN NOM MAX
INCHES
0.15 0.20 0.30 0.006 0.008 0.012
HE
L0.10 0.15 0.20
1.50 1.60 1.70 0.004 0.006 0.008
0.061 0.063 0.065
0.70 0.80 0.90 0.027 0.031 0.035
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
BC847ATT1/D
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
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and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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