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０．９５ ０．９５ １．０
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２．９
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
MMBTA13，14 TRANSISTOR（NPN）
FEATURES
Power dissipation
P
CM : 0.3W（Tamb=25℃）
Collector current
ICM: 0.3A
Collector-base voltage
V(BR)CBO : 30V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA， IE=0 30 V
Collector-emitter breakdown voltage V(BR)CEO Ic= 100uA， IB=0 30 V
Collector-emitter breakdown voltage V(BR)EBO IE= 100μA， Ic=0 10 V
Collector cut-off current I
CBO VCB=30 V , I
E=0 0.1 μA
Emitter cut-off current IEBO VEB= 10V , IC=0 0.1 μA
hFE(1) *
VCE=5V, IC= 10mA MMBTA13
MMBTA14
5000
10000
DC current gain
hFE(2) *
VCE=5V, IC= 100mA MMBTA13
MMBTA14
10000
20000
Collector-emitter saturation voltage V
CE (sat) * IC=100 mA, IB=0.1mA 1.5 V
Base-emitter voltage V
BE * VCE=5V,IC= 100mA 2.0 V
Transition frequency f
T VCE=5V, I
C= 10mA
f=100MHz 125 MHz
* Pulse Test : pulse width≤３００μｓ，ｄｕｔｙ ｃｙｃｌｅ≤２％。
Marking : MMBTA13:1M；MMBTA14：1N
Unit : mm
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
SOT-23 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
A2
b
c
D
E
E1
e
e1
L
L1
θ
Min
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
1.800
0.300
0°
Max
1.100
0.100
1.000
0.500
0.150
3.000
1.400
2.550
2.000
0.500
8°
Min
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.071
0.012
0°
Max
0.043
0.004
0.039
0.020
0.006
0.118
0.055
0.100
0.079
0.020
8°
Dimensions In Millimeters Dimensions In Inches
0.037TPY
0.022REF
0.950TPY
0.550REF
D
E1
A1
A2
A
E
L1
L
b
e1
C
0.2
e
θ
