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1
IRFP064PbF
PD-
95672
8/2/04
Lead-Free
IRFP064PbF
2
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IRFP064PbF
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3
IRFP064PbF
4
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IRFP064PbF
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5
IRFP064PbF
6
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IRFP064PbF
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P.
W
.
Period
+
-
+
+
+
-
-
-
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor "D"
•
D.U.T.
-
Device Under
Test
Circuit
Layout
Considerations
•
Low Stray
Inductance
•
Ground Plane
•
Low
Leakage Inductance
Current
Transformer
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Peak Diode Recovery
dv/dt Test Circuit
***
V
GS
=
5.0V
for
Logic
Level
and
3V
Drive
Devices
Fig-14
For
N
Channel
HEXFETS
IRFP064PbF
8
www.irf.com
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
08/04
TO-247AC
Package
Outline
Dimensions
are
shown
in
millimeters
(inches)
TO-247AC
Part
Marking
Information
EX
A
M
P
LE:
A
S
S
E
MB
L
E
D O
N
W
W
35,
20
00
L
O
T
C
O
DE
5657
W
I
TH
A
SSEM
BLY
THIS
IS
A
N
IR
F
P
E30
IN
THE A
S
SE
M
BLY LI
N
E "
H
"
035H
LO
G
O
IN
TE
RN
A
T
IO
N
A
L
REC
T
IFIER
IRFPE30
LO
T C
O
D
E
A
SSEM
B
LY
56
5
7
PA
R
T NUM
BER
DA
T
E
C
O
DE
YE
AR
0 =
20
0
0
W
EEK 3
5
LI
N
E H
Note
:
"
P" in assem
bly line
posi
tion indicate
s "Lead-Free
"
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