SIYU R KBJ601 ...... KBJ610 Single-phase Silicon Bridge Rectifier 50---1000V 6.0 A Reverse Voltage 50 to 1000 V Forward Current 6.0 A Features .157 (4.0) + ~ .043(1.1) .035(0.9) * Low reverse leakage * High forward surge capability .134(8.4) .122(3.1) *170 A Surge overload rating:170 Amperes peak Mechanical Data - .074(1.9) .059(1.5) .083(2.1) .069(1.7) ~ .146(3.7) .130(3.3) .057(1.45) .041(1.05) .602(15.3) .578(14.7) .382(9.7) .366(9.3) .995(25.3) .983(24.7) .708(18.0) .669(17.0) .134(3.4) .122(3.1) .189(4.8) .173(4.4) .150(3.8) .134(3.4) .114(2.8) .098(2.5) *: Case: Molded Plastic *: Polarity: Symbols molded or marked on body .031(0.8) .023(0.6) *: .303(7.7) .303(7.7) .303(7.7) .287(7.3) .287(7.3) .287(7.3) *: 4.6 Mounting Position: Any Weight:4.6 Grams Unitinchmm TA = 25 Maximum Ratings & Thermal Characteristics Ratings at 25 ambient temperature unless otherwise specified. KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit Maximum repetitive peak reverse voltage VRRM 100 200 300 400 600 800 1000 V Maximum RMS voltage VRMS 70 140 210 280 420 560 700 V Maximum DC blocking voltage VDC 100 200 300 400 600 800 1000 V TC =111 IF(AV) 6.0 2.8 A IFSM 170 A @TA = 75 Maximum peak reverse current full cycle IR(AV) 30 A Typical thermal resistance RJA 10 /W Maximum average forward rectified current Ta=25 8.3ms Peak forward surge current 8.3 ms single half sine-wave Operating junction and storage temperature range Tj, TSTG -50 --- +150 TA = 25 Electrical Characteristics Ratings at 25 ambient temperature unless otherwise specified. KBJ601 KBJ602 KBJ603 KBJ604 KBJ606 KBJ608 KBJ610 Symbols GBJ601 GBJ602 GBJ603 GBJ604 GBJ606 GBJ608 GBJ610 Unit IF = 3.0A Maximum forward voltage Maximum reverse current VR = 4.0V, f = 1MHz Type junction capacitance - 125 - TA= 25 TA=100 VF 1.0 V IR 10 500 A Cj 40 pF DACHANG ELECTRONICS SIYU R KBJ601...... KBJ610 Characteristic Curves TYPICAL FORWARD CHARACTERISTIC FORWARD CURRENT DERATING CURVE 4.0 Tl=150 1 Tl=25 Pulse measurement per diode 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 IF(AV) (A) IF(A) Average Forward Rectified Current (A) IF(A) IF Instantaneous Forward Current (A) 10 on glass-epoxi substrate + ~ - P.C.B. soldering land 5mm sine wave R-load free in air 2.0 1.0 00 1.2 ~ 3.0 40 80 120 160 Ta(C) Tamb, ambient temperature (C) VF(V) VF Instantaneous Forward Voltage (V) MAXIMUM NON REPETITIVE PEAK FORWARD SURGE CURRENT FORWARD POWER DISSIPATION 14 IFSM 240 160 P(W) IFSM(A) IFSM Peak Forward Surge Current (A) 12 10mS 1 Cycle non-repetitive Tj=25 before 120 80 40 0 0 2 5 10 20 50 100 FORWARD POWER DISSIPATION PF(W)) 10mS 200 10 8 6 4 Sine wave Tj=150 2 0 0 1 2 3 4 5 6 7 I0(A) AVERAGE RECGIFIED FORWARD CURRENT Io(A) Number of Cycles at 60 Hz. FORWARD CURRENT DERATING CURVE IF(AV) (A) IF(A) Average Forward Rectified Current (A) 10 Tc-sensing point 9 + 8 ~ ~ - Tc sine wave R-load with heatsink 7 6 5 4 3 2 1 00 40 80 120 160 TC(C) Case Temperature Tc() DACHANG ELECTRONICS - 126 -