5SDD 10T1800
TS - D/117/04b Mar-12 1 of 6
5SDD 10T1800
Old part no. D 806C-1010-18
Rectifier Diode
Properties
Key Parameters
Industry standard housing
VRRM
=
1 800
V
Suitable for parallel operation
IFAVm
=
1 013
A
High operating temperature
IFSM
=
13 500
A
Low forward voltage drop
VTO
=
0.934
V
rT
=
0.257
m
Types
VRRM
5SDD 10T1800
1 800 V
Conditions:
Tj = -40 ÷ 150 °C,
half sine waveform,
f = 50 Hz
Mechanical Data
Fm
Mounting force
9 ± 3
kN
m
Weight
0.11
kg
DS
Surface creepage
distance
16
mm
Da
Air strike distance
9.7
mm
Fig. 1 Case
ABB s.r.o.
Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
tel.: +420 261 306 250, http://www.abb.com/semiconductors
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04b Mar-12 2 of 6
Major Ratings
Value
Unit
VRRM
Repetitive peak reverse voltage
Tj = -40 ÷ 150 °C
1 800
V
IFAVm
Average forward current
Tc = 85 °C
1 013
A
IFRMS
RMS forward current
Tc = 85 °C
1 592
A
IRRM
Repetitive reverse current
VR = VRRM
30
mA
IFSM
Non repetitive peak surge current
half sine pulse, VR = 0 V
tp = 10 ms
13 500
A
tp = 8.3 ms
14 400
IFSM
Non repetitive peak surge current
half sine pulse, VR = 0.7 VRRM
tp = 10 ms
10 800
A
tp = 8.3 ms
11 500
I2t
Limiting load integral
half sine pulse, VR = 0 V
tp = 10 ms
910 000
A2s
tp = 8.3 ms
860 000
I2t
Limiting load integral
half sine pulse, VR = 0.7 VRRM
tp = 10 ms
583 000
A2s
tp = 8.3 ms
549 000
Tjmin -Tjmax
Operating temperature range
-40 ÷ 150
°C
TSTG
Storage temperature range
-40 ÷ 175
°C
Unless otherwise specified Tj = 150 °C
Characteristics
Value
Unit
min
typ
max
VT0
Threshold voltage
0.934
V
rT
Forward slope resistance
IF1 = 1 600 A, IF2 = 4 000 A
0.257
m
VFM
Maximum forward voltage
IFM =2000 A
1.46
V
Qrr
Recovered charge
VR = 100 V, IFM = 1000 A, di/dt = -30 A/µs
550
µC
Unless otherwise specified Tj = 150 °C
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04b Mar-12 3 of 6
Thermal Parameters
Value
Unit
Rthjc
Thermal resistance
junction to case
double side cooling
38
K/kW
anode side cooling
58
cathode side cooling
110
Rthch
Thermal resistance
case to heatsink
double side cooling
12
K/kW
single side cooling
24
Transient Thermal Impedance
Analytical function for transient
thermal impedance
4
1))/exp(1(
iiithjc tRZ
Conditions:
Fm = 9 ± 3 kN, Double side cooled
Correction for periodic waveforms
180°
sine:
2.7
K/kW
180°
rectangular:
5.0
K/kW
120°
rectangular:
8.6
K/kW
60°
rectangular:
16.3
K/kW
i
1
2
3
4
i ( s )
0.2912
0.0890
0.0153
0.0018
Ri( K/kW )
8.82
24.43
1.88
2.87
0
5
10
15
20
25
30
35
40
0,001 0,01 0,1 1 10
Square w ave pulse duration td ( s )
Transient therm al impedance
junction to case Zthjc ( K/kW )
Fig. 2
Dependence transient thermal impedance junction
to case on square pulse
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04b Mar-12 4 of 6
Maximum forward voltage drop characteristics
Analytical function for maximum
forward drop characteristics
)1ln( FFFF IDICIBAV
Conditions:
Fm = 9 ± 3 kN, halfsine pulse 8.3 ÷ 10 ms
Tj ( °C )
A
B
C
D
25
0.19567
1.938E-04
-0.00762
0.15181
150
0.28526
1.767E-04
0.00529
0.07669
0
1000
2000
3000
4000
5000
6000
0,5 1 1,5 2 2,5
VF ( V )
IF ( A )
Tj = 25°C
150°C
Fig. 3
Maximum forward voltage drop characteristics
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04b Mar-12 5 of 6
0
2
4
6
8
10
12
14
16
110 100
Number n of pulses at 50 Hz
IFSM ( kA )
VR = 0
VR £ 0.7 VRRM
Fig. 4
Surge forward current vs. pulse length,
half sine wave, single pulse, Tj = Tjmax
Fig. 5
Surge forward current vs. number
of pulses, half sine wave, Tj = Tjmax
0
200
400
600
800
1000
1200
1400
1600
1800
0200 400 600 800 1000 1200
IFAV ( A )
PT ( W )
120°
180°
DC
= 60°
0
200
400
600
800
1000
1200
1400
1600
1800
0200 400 600 800 1000 1200
IFAV ( A )
PT ( W )
= 30°
60°
90°
120°
180°
270°
DC
Fig. 6
Forward power loss vs. average forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 7
Forward power loss vs. average forward
current, square waveform, f = 50 Hz, T = 1/f
5SDD 10T1800
ABB s.r.o., Novodvorska 1768/138a, 142 21 Praha 4, Czech Republic
ABB s.r.o. reserves the right to change the data contained herein at any time without notice
TS - D/117/04b Mar-12 6 of 6
60
70
80
90
100
110
120
130
140
150
160
0200 400 600 800 1000 1200
IFAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
= 30°
60
70
80
90
100
110
120
130
140
150
160
0200 400 600 800 1000 1200
IFAV ( A )
TC ( °C )
180°
DC
270°
120°
90°
60°
= 30°
Fig. 8
Max. case temperature vs. aver. forward
current, sine waveform, f = 50 Hz, T = 1/f
Fig. 9
Max.case temperature vs. aver. forward
current, square waveform, f = 50 Hz, T = 1/f
Notes:
