Mega Power Dual IGBT
1400 Amperes/1200 Volts
CM1400DUC-24S
109/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
Outline Drawing and Circuit Diagram
Description:
Powerex Mega Power Dual (MPD)
Modules are designed for use in
switching applications. Each
module consists of two IGBT
Transistors having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heatsinking
£ RoHS Compliant
Applications:
£ High Power DC Power Supply
£ Large DC Motor Drives
£ Utility Interface Inverters
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM1400DUC-24S
is a 1200V (VCES), 1400 Ampere
Dual IGBTMOD Power
Module.
Current Rating VCES
Type Amperes Volts (x 50)
CM 1400 24
Dimensions Inches Millimeters
M 0.075±0.008 1.9±0.2
N 0.47 12.0
P 0.26 6.5
R M6 Metric M6
S 0.08 2.0
T 0.99 25.1
U 0.62 15.7
V 0.71 18.0
W 0.75 19.0
X 0.43 11.0
Y 0.83 21.0
Z 0.41 10.5
AA 0.22 5.5
Dimensions Inches Millimeters
A 5.91 150.0
B 5.10 129.5
C 1.67±0.01 42.5±0.25
D 5.41±0.01 137.5±0.25
E 6.54 166.0
F 2.91±0.01 74.0±0.25
G 1.65 42.0
H 0.55 14.0
J 1.50±0.01 38.0±0.25
K 0.16 4.0
L 1.36 +0.04/-0.02 34.6 +1.0/-0.5
Housing Type (J.S.T. MFG. CO. LTD)
BB = VHR-2N
CC = VHR-5N
C2E1
E2
G2
E2 (Es2)
E1 (Es1)
C1 (Cs1)C2 (Cs2)
G1
Tr 2
Di2 Di1
C1
Tr 1
Tolerance Otherwise Specified (mm)
Division of Dimension Tolerance
0.5 to 3 ±0.2
over 3 to 6 ±0.3
over 6 to 30 ±0.5
over 30 to 120 ±0.8
over 120 to 400 ±1. 2
A
D
P
(8 PLACES) L
L
M
H H HHH H
K
G
UH H
E
F
F
E2
C2
C2E1
C1
G2 E1
E2 G1
C1
V
BB
CC
B
C
J
J
G G
R (9 PLACES)
LABEL
U
W
S
N
X
YZ
AA
T
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
209/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol Rating Units
Collector-Emitter Voltage (VGE = 0V) VCES 1200 Volts
Gate-Emitter Voltage (VCE = 0V) VGES ±20 Volts
Collector Current (DC, TC = 124°C)*2,*4 IC 1400 Amperes
Collector Current (Pulse, Repetitive)*3 ICRM 2800 Amperes
Total Power Dissipation (TC = 25°C)*2,*4 Ptot 9370 Watts
Emitter Current*2 IE*1 1400 Amperes
Emitter Current (Pulse, Repetitive)*3 IERM*1 2800 Amperes
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute) Visol 4000 Volts
Maximum Junction Temperature Tj(max) 175 °C
Maximum Case Temperature*4 TC (max) 125 °C
Operating Junction Temperature Tj(op) -40 to +150 °C
Storage Temperature Tstg -40 to +125 °C
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Junction temperature (Tj) should not increase beyond maximum junction
temperature (Tj(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (Tj)
does not exceed Tj(max) rating.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
54.9
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
0
38.2
51.0
98.9
111.8
Tr 2
74.5
96.4
116.0 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
33.0 Tr 2 Di2 Tr 1
Di1
13.4 Tr 2 Di2 Tr 1
Di1
LABEL SIDE
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
309/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Emitter Cutoff Current ICES VCE = VCES, VGE = 0V — — 1 mA
Gate-Emitter Leakage Current IGES VGE = VGES, VCE = 0V — — 3.0 µA
Gate-Emitter Threshold Voltage VGE(th) IC = 140mA, VCE = 10V 5.4 6.0 6.6 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 1400A, VGE = 15V, Tj = 25°C*6 — 1.55 1.90 Volts
(Terminal) IC = 1400A, VGE = 15V, Tj = 125°C*6 — 1.75 — Volts
IC = 1400A, VGE = 15V, Tj = 150°C*6 — 1.80 — Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 1400A, VGE = 15V, Tj = 25°C*6 — 1.55 1.90 Volts
(Chip) IC = 1400A, VGE = 15V, Tj = 125°C*6 — 1.75 — Volts
IC = 1400A, VGE = 15V, Tj = 150°C*6 — 1.80 — Volts
Input Capacitance Cies — — 150 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 30 nF
Reverse Transfer Capacitance Cres — — 2.5 nF
Gate Charge QG VCC = 600V, IC = 1400A, VGE = 15V — 3500 — nC
Turn-on Delay Time td(on) — — 900 ns
Rise Time tr VCC = 600V, IC = 1400A, VGE = ±15V, — — 250 ns
Turn-off Delay Time td(off) RG = 0Ω, Inductive Load — — 950 ns
Fall Time tf — — 350 ns
Emitter-Collector Voltage VEC*1 IE = 1400A, VGE = 0V, Tj = 25°C*6 — 1.65 2.10 Volts
(Terminal) IE = 1400A, VGE = 0V, Tj = 125°C*6 — 1.65 — Volts
IE = 1400A, VGE = 0V, Tj = 150°C*6 — 1.65 — Volts
Emitter-Collector Voltage VEC*1 IE = 1400A, VGE = 0V, Tj = 25°C*6 — 1.65 2.10 Volts
(Chip) IE = 1400A, VGE = 0V, Tj = 125°C*6 — 1.65 — Volts
IE = 1400A, VGE = 0V, Tj = 150°C*6 — 1.65 — Volts
Reverse Recovery Time trr*1 VCC = 600V, IE = 1400A, VGE = ±15V — — 450 ns
Reverse Recovery Charge Qrr*1 RG = 0Ω, Inductive Load — 90 — µC
Turn-on Switching Energy per Pulse Eon VCC = 600V, IC = IE = 1400A, — 82.2 — mJ
Turn-off Switching Energy per Pulse Eoff VGE = ±15V, RG = 0Ω, Tj = 150°C, — 260 — mJ
Reverse Recovery Energy per Pulse Err*1 Inductive Load — 122 — mJ
Internal Lead Resistance RCC' + EE' Main Terminals-Chip, — 0.286 — mΩ
Per Switch,TC = 25°C*4
Internal Gate Resistance rg Per Switch — 1.7 — Ω
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
54.9
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
0
38.2
51.0
98.9
111.8
Tr 2
74.5
96.4
116.0 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
33.0 Tr 2 Di2 Tr 1
Di1
13.4 Tr 2 Di2 Tr 1
Di1
LABEL SIDE
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
409/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
Electrical Characteristics, Tj = 25°C unless otherwise specied (continued)
Thermal Resistance Characteristics
Thermal Resistance, Junction to Case*4 Rth(j-c)Q Per Inverter IGBT — — 16 K/kW
Thermal Resistance, Junction to Case*4 Rth(j-c)D Per Inverter Diode — — 26 K/kW
Contact Thermal Resistance, Rth(c-f) Thermal Grease Applied — 6 — K/kW
Case to Heatsink (Per 1 Module)*7
Mechanical Characteristics
Mounting Torque Mt Main Terminals, M6 Screw 22 27 31 in-lb
Ms Mounting to Heatsink, M6 Screw 22 27 31 in-lb
Creepage Distance ds Terminal to Terminal 24 — — mm
Terminal to Baseplate 33 — — mm
Clearance da Terminal to Terminal 14 — — mm
Terminal to Baseplate 33 — — mm
Weight m — 1450 — Grams
Flatness of Baseplate ec On Centerline X, Y*5 -50 — +100 µm
Recommended Operating Conditons, Ta = 25°C
(DC) Supply Voltage VCC Applied Across P-N — 600 850 Volts
Gate-Emitter Drive Voltage VGE(on) Applied Across G-Es 13.5 15.0 16.5 Volts
External Gate Resistance RG Per Switch 0 — 2.2 Ω
*4 Case temperature (TC) and heatsink temperature (Ts) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*5 Baseplate (mounting side) flatness measurement points (X, Y) are shown in the figure below.
*7 Typical value is measured by using thermally conductive grease of λ = 0.9 [W/(m • K)].
X
BOTTOM
– CONCAVE
+ CONVEX
– CONCAVE
+ CONVEX
BOTTOM
BOTTOM
LABEL SIDE
Y1
39 mm 39 mm
Y2
54.9
0
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
0
38.2
51.0
98.9
111.8
Tr 2
74.5
96.4
116.0 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
Tr 2 Di2 Tr 1
Di1
33.0 Tr 2 Di2 Tr 1
Di1
13.4 Tr 2 Di2 Tr 1
Di1
LABEL SIDE
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
509/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(TYPICAL)
100102
103
102
101
10-1
100
101
0 1.00.5 2.51.5 2.0 3.0
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
102
103
104
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
VGE = 0V
Tj = 25°C
Cies
Coes
Cres
IC = 2800A
IC = 1400A
IC = 560A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13.5
15
9
Tj = 25°C
3000
500
100
1500
2500
2000
COLLECTOR CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
2.5
3.0
3.5
0
2.0
1.5
0.5
1.0
03000250020001500500 1000
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
104
102103
103
101
102
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
tf
104
COLLECTOR CURRENT, IC, (AMPERES)
104
102103
103
101
102
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
td(off)
td(on)
tr
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
tf
104
EXTERNAL GATE RESISTANCE, RG, (Ω)
100
10-1
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
td(on)
tr
VCC = 600V
VGE = ±15V
IC = 1400A
Tj = 125°C
Inductive Load
VCC = 600V
VGE = ±15V
IC = 1400A
Tj = 150°C
Inductive Load
tf
101
EXTERNAL GATE RESISTANCE, RG, (Ω)
103103
100
10-1
102102
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
101
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 150°C
tr
tf
td(off)
td(off)
td(on)
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
609/12 Rev. 0
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
16 K/kW
(IGBT)
Rth(j-c) =
26 K/kW
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
20
0
15
10
5
0
3000 4000
1000 50002000
IC = 600A
VCC = 1400V
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102103104
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
REVERSE RECOVERY, Irr (A), trr (ns)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102103
102102
104
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
REVERSE RECOVERY, Irr (A), trr (ns)
GATE RESISTANCE, RG, (Ω)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
103
102
10-1 100101
101
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C VCC = 600V
VGE = ±15V
IC/IE = 1400A
Tj = 125°C
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
103
102
100
101
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Err
GATE RESISTANCE, RG, (Ω)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
103
102
10-1 100101
101
Eon
Eoff
Err
102103104
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
SWITCHING ENERGY, Eon, Eoff, (mJ)
REVERSE RECIVERY ENERGY, Err, (mJ)
103
102
101
101
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
Eon
Eoff
Err
102103104
VCC = 600V
VGE = ±15V
IC/IE = 1400A
Tj = 150°C
Eon
Eoff
Err