Power Discrete and Module Portfolio
Discrete and Power Management
www.microchip.com/DPM
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2
Contents
High-Voltage SMPS Transistors
Insulated Gate Bipolar Transistors (IGBTs) .............................................................................................................................. 3
IGBTs—Punch-Thru ............................................................................................................................................................... 4
IGBTs—Non-Punch-Thru ....................................................................................................................................................... 5
IGBTs—Field Stop .................................................................................................................................................................. 6
Silicon Carbide (SiC) MOSFETs .............................................................................................................................................. 7
Power MOS 8™ MOSFETs/FREDFETs ................................................................................................................................... 8
Ultra-Fast, Low Gate Charge MOSFETs ............................................................................................................................... 10
Super Junction MOSFETs .................................................................................................................................................... 11
Linear MOSFETs .................................................................................................................................................................. 11
Diodes
SiC Schottky Barrier Diodes ................................................................................................................................................. 12
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes ......................................................................................... 14
High-Voltage RF MOSFETs .................................................................................................................................................... 16
High-Frequency RF MOSFETs ............................................................................................................................................... 16
Drivers and Driver-RF MOSFET Hybrids ................................................................................................................................ 17
Reference Design Kits ............................................................................................................................................................ 17
Power Modules
Power Modules Contents ..................................................................................................................................................... 18
Standard Electrical Congurations ........................................................................................................................................ 19
Packaging ............................................................................................................................................................................ 20
Custom Power Modules ....................................................................................................................................................... 21
Rugged Custom Power Modules ......................................................................................................................................... 23
Power Module Part Numbering System ................................................................................................................................ 25
IGBT Power Modules ........................................................................................................................................................... 26
Intelligent Power Modules .................................................................................................................................................... 29
MOSFET Power Modules ..................................................................................................................................................... 30
Renewable Energy Power Modules ...................................................................................................................................... 34
Power Modules with SiC Schottky Diodes ............................................................................................................................ 36
SiC MOSFET Power Modules ............................................................................................................................................... 38
Diode Power Modules .......................................................................................................................................................... 39
Package Outlines ................................................................................................................................................................... 40
Power Module Outlines .......................................................................................................................................................... 41
Power Portfolio 3
Insulated Gate Bipolar Transistors (IGBTs)
IGBTs From Microchip
IGBT products from Microchip provide high-quality solutions for a wide range of high-voltage and high-power applications. The switch-
ing
frequency range spans from DC for minimal conduction loss to 150 kHz for very-high-power-density Switch Mode Power Supply
(SMPS) applications. The frequency range for each product type is shown in the following graph. Each IGBT product represents
the latest in IGBT technology, providing the best possible performance/cost combination for the targeted application. There are six
product series that utilize three dierent IGBT technologies: Non-Punch-Through (NPT), Punch-Through (PT) and eld stop.
IGBT Switching Frequency Ranges (kHz, Hard Switched)
0 20 40 60 80 100 120 140 160
600V
Field Stop
Power MOS 8™ PT
650V Power MOS 8 NPT
900V Power MOS 8 PT
1200V
Field Stop
Power MOS 7™ PT
Power MOS 8 NPT
Note: Frequency ranges shown are typical for a 50 A IGBT. Refer to product datasheet maximum frequency versus current graph for more
information.
Standard Series Voltage Ratings (V) Technology Easy to Parallel Short Circuit Safe
Operating Area (SOA) Parameter
MOS 7™1200 PT Ultra-low gate charge
MOS 8
™
600, 650, 900, 1200 PT, NPT Highest eciency
Field Stop Trench Gate
600, 1200 Field Stop • • Lowest conduction loss
Product Options
All standard IGBT products are available as a single IGBT or as a Combi product packaged with an anti-parallel DQ series diode.
Package options include TO-220, TO-247, T-MAX®, TO-264 and SOT-227. Customized products are available; contact the factory
for details.
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4
V(br)ces (V) Vce(on) (V)
Typ 25°C
Ic2 (A)
100°C
Maximum Ic (A)
at Frequency
Part
Number
Package
Style
POWER MOS 7™Single 20 kHz 40 kHz
• Ultra-low gate
charge
• Combi with high-
speed DQ diode
1200
3.3 33 19 12 APT25GP120BG TO-247
3.3 46 24 15 APT35GP120BG TO-247
3.3 54 29 18 APT45GP120BG TO-247
3.3 34 28 18 APT45GP120J ISOTOP
3.3 91 42 24 APT75GP120B2G T-MAX®
3.3 57 40 23 APT75GP120J ISOTOP
Combi (IGBT
& "DQ" FRED) 20 kHz 40 kHz
1200
3.3 33 19 12 APT25GP120BDQ1G TO-247
3.3 46 24 15 APT35GP120B2DQ2G T-MAX
3.3 54 29 18 APT45GP120B2DQ2G T-MAX
3.3 34 28 18 APT45GP120JDQ2 ISOTOP®
3.3 57 40 23 APT75GP120JDQ3 ISOTOP
POWER MOS 8™Single 50 kHz 80 kHz
• Fast switching
• Highesteciency
• Combi with high-
speed DQ diode
600
2 36 21 17 APT36GA60B TO-247 or D3PAK
2 44 26 20 APT44GA60B TO-247 or D3PAK
2 54 30 23 APT54GA60B TO-247 or D3PAK
2 68 35 27 APT68GA60B TO-247 or D3PAK
2 80 40 31 APT80GA60B TO-247 or D3PAK
2 102 51 39 APT102GA60B2 T-MAX or TO-264
25 kHz 50 kHz
900
2.5 35 17 10 APT35GA90B TO-247 or D3PAK
2.5 43 21 13 APT43GA90B TO-247 or D3PAK
2.5 64 29 19 APT64GA90B TO-247 or D3PAK
2.5 80 34 23 APT80GA90B TO-247 or D3PAK
Combi (IGBT
& "DQ" FRED) 50 kHz 80 kHz
600
2 36 21 17 APT36GA60BD15 TO-247 or D3PAK
2 44 26 20 APT44GA60BD30 TO-247 or D3PAK
2 54 30 23 APT54GA60BD30 TO-247 or D3PAK
2 60 48 36 APT60GA60JD60 ISOTOP
2 68 35 27 APT68GA60B2D40 T-MAX or TO-264
2 80 40 31 APT80GA60LD40 TO-264
25 kHz 50 kHz
900
2.5 27 14 8 APT27GA90BD15 TO-247 or D3PAK
2.5 35 17 10 APT35GA90BD15 TO-247 or D3PAK
2.5 43 21 13 APT43GA90BD30 TO-247 or D3PAK
2.5 46 33 21 APT46GA90JD40 ISOTO
2.5 64 29 19 APT64GA90B2D30 T-MAX or TO-264
2.5 80 34 23 APT80GA90LD40 TO-264
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch.
C
E
G
TO-247[B]
ISOTOP®[J]
SOT-227
T-MAX®[B2]
D3PAK[S]
TO-264[L]
IGBTs—Punch-Thru
Power Portfolio 5
IGBTs—Non-Punch-Thru
V(br)ces (V) Vce(on) (V)
Typ 25°C
Ic2 (A)
100°C
Maximum Ic (A)
at Frequency
Part
Number
Package
Style
POWER MOS 8™ Single 150 kHz 200 kHz
• High-speed
switching
• Low switching
losses
• Easy to parallel
650
1.9 45 31 25 APT45GR65B TO-247
100 kHz 150 kHz
1.9 70 52 39 APT70GR65B TO-247
50 kHz 100 kHz
1.9 95 69 41 APT95GR65B2 T-MAX
®
1200
50 kHz 80 kHz
2.5 25 25 21 APT25GR120B TO-247
2.5 25 25 21 APT25GR120S D3PAK
2.5 40 38 28 APT40GR120B TO-247
2.5 40 38 28 APT40GR120S D3PAK
2.5 50 48 36 APT50GR120B2 T-MAX
2.5 50 48 36 APT50GR120L TO-264
25 kHz 50 kHz
2.5 70 66 42 APT70GR120B2 T-MAX
2.5 70 66 42 APT70GR120L TO-264
2.5 70* 42 30 APT70GR120J ISOTOP
®
2.5 85 72 46 APT85GR120B2 T-MAX
2.5 85 72 46 APT85GR120L TO-264
2.5 85* 46 31 APT85GR120J ISOTOP
Combi
(IGBT & Diode) 150 kHz 200 kHz
650
1.9 45 31 25 APT45GR65BSCD10 TO-247 (SiC SBD)
100 kHz 150 kHz
1.9 70 52 39 APT70GR65B2SCD30 T-MAX (SiC SBD)
1200
50 kHz 80 kHz
2.5 25 25 21 APT25GR120BD15 TO-247 (DQ)
2.5 25 25 21 APT25GR120SD15 D3PAK (DQ)
2.5 25 25 21 APT25GR120BSCD10 TO-247 (SiC SBD)
2.5 25 25 21 APT25GR120SSCD10 D3PAK (SiC SBD)
2.5 40 38 28 APT40GR120B2D30 T-MAX (DQ)
2.5 40 38 28 APT40GR120B2SCD10 T-MAX (SiC SBD)
25 kHz 50 kHz
2.5 50* 42 32 APT50GR120JD30 ISOTOP (DQ)
2.5 70* 42 30 APT70GR120JD60 ISOTOP (DQ)
2.5 85* 46 31 APT85GR120JD60 ISOTOP (DQ)
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch.
C
E
G
TO-247[B]
ISOTOP®[J]
SOT-227
T-MAX®[B2]
D3PAK[S]
TO-264[L]
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6
IGBTs—Field Stop
V(br)ces (V) Vce(on) (V)
Typ 25°C
Ic2 (A)
100°C
Maximum Ic (A)
at Frequency
Part
Number
Package
Style
Field Stop Single 15 kHz 30 kHz
• Trench technology
• Short circuit rated
• Lowest conduction
loss
• Easy paralleling
• Combi with high-
speed DQ diode
600
1.5 24 15 10 APT20GN60BG TO-247
1.5 37 20 14 APT30GN60BG TO-247
1.5 64 30 21 APT50GN60BG TO-247
1.5 93 42 30 APT75GN60BG TO-247
1.5 123 75 47 APT150GN60J ISOTOP®
1.5 135 54 39 APT100GN60B2G T-MAX®
1.5 190 79 57 APT150GN60B2G T-MAX
1.5 230 103 75 APT200GN60B2G T-MAX
1.5 158 100 66 APT200GN60J ISOTOP
1200
10 kHz 20 kHz
1.7 33 19 13 APT25GN120BG TO-247 or
D3PAK
1.7 46 24 17 APT35GN120BG TO-247
1.7 66 32 22 APT50GN120B2G T-MAX
1.7 70 44 27 APT100GN120J ISOTOP
1.7 99 45 30 APT75GN120B2G T-MAX or TO-264
1.7 120 58 38 APT100GN120B2G T-MAX
1.7 99 60 36 APT150GN120J ISOTOP
Combi (IGBT
& "DQ" FRED) 15 kHz 30 kHz
600
1.5 24 15 10 APT20GN60BDQ1G TO-247
1.5 37 20 14 APT30GN60BDQ2G TO-247
1.5 64 30 21 APT50GN60BDQ2G TO-247
1.5 93 42 30 APT75GN60LDQ3G TO-264
1.5 123 75 47 APT150GN60JDQ4 ISOTOP
1.5 135 54 39 APT100GN60LDQ4G TO-264v
1.5 190 79 57 APT150GN60LDQ4G TO-264
1.5 158 100 66 APT200GN60JDQ4 ISOTOP
1200
10 kHz 20 kHz
1.7 22 14 10 APT15GN120BDQ1G TO-247 or
D3PAK
1.7 33 19 13 APT25GN120B2DQ2G T-MAX
1.7 46 24 17 APT35GN120L2DQ2G 264-MAX™
1.7 57 36 22 APT75GN120JDQ3 ISOTOP
1.7 66 32 22 APT50GN120L2DQ2G 264-MAX
1.7 70 44 27 APT100GN120JDQ4 ISOTOP
1.7 99 60 36 APT150GN120JDQ4 ISOTOP
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Current at frequency test conditions: Tj = 125°C, Tc = 100°C except Isotop® where Tc = 80°C, Vcc = 67% rated voltage hard switch.
C
E
G
TO-247[B]
ISOTOP®[J]
SOT-227
T-MAX®[B2]
D3PAK[S]
TO-264[L]
264-MAX™[L2]
Power Portfolio 7
Silicon Carbide (SiC) MOSFETs
Part Number Voltage (V) Rds(on)(mΩ) Id (Max at 25°C) (A) Package
MSC090SMA070B
700
90 20 TO-247
MSC090SMA070S 19 D3PAK
MSC060SMA070B 60 35 TO-247
MSC060SMA070S 33 D3PAK
MSC035SMA070B 35 70 TO-247
MSC035SMA070S 62 D3PAK
MSC015SMA070B 15 141 TO-247
MSC015SMA070S 126 D3PAK
MSC080SMA120B
1200
80
33 TO-247
MSC080SMA120S 32 D3PAK
MSC080SMA120J 26 SOT-227
MSC040SMA120B
40
67 TO-247
MSC040SMA120S 64 D3PAK
MSC040SMA120J 53 SOT-227
MSC025SMA120B
25
103 TO-247
MSC025SMA120S 94 D3PAK
MSC025SMA120J 77 SOT-227
MSC750SMA170B
1700
750 5.0 TO-247
MSC750SMA170S 4.4 D3PAK
MSC045SMA170B 45 55 TO-247
MSC045SMA170S 50 D3PAK
SiCMOSFETFeaturesandBenets
Characteristics Results Benets
Breakdown eld (MV/cm) Lower on-resistance Higher eciency
Electron sat. velocity (cm/s) Faster switching Size reduction
Bandgap energy (ev) Higher junction temperature Improved cooling
Thermal conductivity (W/m.K) Higher power density Higher current capabilities
Positive temperature coecient Self regulation Easy paralleling
Advantages Versus Competition
• Lowest conduction losses at high temperature
• Low switching losses
• High short circuit withstand rating
• Low gate resistance
• High avalanche rating: UIS and Repetitive UIS
• Patented SiC technology
• SiC is the perfect technology to address high-frequency
and high-power-density applications
• Lower power losses
• Easier cooling, downsized system and higher reliability
Silicon Carbide (SiC) MOSFETs
Silicon Carbide (SiC) is the ideal technology for higher switch-
ing
frequency, higher eciency, and higher power (>650V)
applications. Target markets and applications include:
• Commercial aviation: actuation, air conditioning,
power distribution
• I
ndustrial: Motor drives, welding, Uniterruptible Power Supply
(UPS), SMPS, induction heating
• Transportation/automotive: Electric Vehicle (EV) battery
charger, Hybrid Electric Vehicle (HEV) powertrain, DC–DC
converter, energy recovery
• Smart energy: PhotoVoltaic (PV) inverter, wind turbine
• Medical: MRI power supply, x-Ray power supply
• Defense and oil drilling: motor drives, auxiliary power
supplies
SiC MOSFET and SiC Schottky barrier diode product lines
from Microchip increase your system eciency over silicon
MOSFET and IGBT solutions while lowering your total cost of
ownership by enabling downsized systems and smaller/lower
cost cooling.
TO-268
D3PAK
TO-247
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8
Power MOS 8™ MOSFETs/FREDFETs
BVDSS (V) Rds(on)
Max(Ω) Id (A) MOSFET
Part Number Id (A) FREDFET
Part Number
Package
Style
1200
2.40 7 APT7F120B TO-247 or
D3PAK
2.10 8 APT7M120B TO-247
1.20 14 APT13F120B TO-247 or
D3PAK
1.10 14 APT14M120B TO-247
0.70 23 APT22F120B2 T-MAX® or TO-264
0.63 24 APT24M120B2 T-MAX or TO-264
0.58 27 APT26F120B2 T-MAX or TO-264
0.58 18 APT17F120J ISOTOP®
0.53 29 APT28M120B2 T-MAX or TO-264
0.53 19 APT19M120J ISOTOP
0.32 33 APT32F120J ISOTOP
0.29 35 APT34M120J ISOTOP
1000
2.00 7 APT7F100B TO-247
1.80 8 APT8M100B TO-247
1.60 9 APT9F100B TO-247 or
D3PAK
1.40 9 APT9M100B TO-247
0.98 14 APT14F100B TO-247 or
D3PAK
0.88 14 APT14M100B TO-247 or
D3PAK
0.78 17 APT17F100B TO-247 or
D3PAK
0.70 18 APT18M100B TO-247
0.44 30 APT29F100B2 T-MAX or TO-264
0.44 20 APT19F100J ISOTOP
0.38 32 APT31M100B2 35 APT34F100B2 T-MAX or TO-264
0.38 21 APT21M100J 23 APT22F100J ISOTOP
0.33 37 APT37M100B2 T-MAX or TO-264
0.33 25 APT25M100J ISOTOP
0.20 42 APT41F100J ISOTOP
0.18 45 APT45M100J ISOTOP
800
0.90 12 APT11F80B TO-247 or
D3PAK
0.80 13 APT12M80B TO-247
0.58 18 APT17F80B TO-247 or
D3PAK
0.53 19 APT18M80B TO-247 or
D3PAK
0.43 23 APT22F80B TO-247 or
D3PAK
0.39 25 APT24M80B TO-247 or
D3PAK
0.24 41 APT38F80B2 T-MAX or TO-264
0.21 43 APT41M80B2 47 APT44F80B2 T-MAX or TO-264
0.21 31 APT29F80J ISOTOP
0.19 49 APT48M80B2 T-MAX or TO-264
0.19 33 APT32M80J ISOTOP
0.11 57 APT53F80J ISOTOP
0.10 60 APT58M80J ISOTOP
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
ISOTOP®[J]
SOT-227
(Isolated Base)
TO-247[B]
T-MAX®[B2]
D3PAK[S]
TO-264[L]
Power Portfolio 9
Power MOS 8 MOSFETs/FREDFETs
BVDSS (V) Rds(on)
Max(Ω) Id (A) MOSFET
Part Number Id (A) FREDFET
Part Number
Package
Style
600
0.37 19 APT18F60B TO-247 or
D3PAK
0.29 24 APT23F60B TO-247 or
D3PAK
0.19 36 APT34M60B 36 APT34F60B TO-247
0.15 45 APT43M60B2 45 APT43F60B2 T-MAX® or TO-264
0.15 31 APT30M60J 31 APT30F60J ISOTOP®
0.11 60 APT56M60B2 60 APT56F60B2 T-MAX or TO-264
0.11 42 APT39M60J 42 APT39F60J ISOTOP
0.09 70 APT66M60B2 70 APT66F60B2 T-MAX or TO-264
0.09 49 APT47M60J 49 APT47F60J ISOTOP
0.055 84 APT80M60J 84 APT80F60J ISOTOP
500
0.24 24 APT24F50B TO-247 or
D3PAK
0.19 30 APT30F50B TO-247 or
D3PAK
0.15 37 APT37F50B TO-247 or
D3PAK
0.13 43 APT42F50B TO-247 or
D3PAK
0.10 56 APT56M50B2 56 APT56F50B2 T-MAX or TO-264
0.10 38 APT38M50J 38 APT38F50J ISOTOP
0.075 75 APT75M50B2 75 APT75F50B2 T-MAX or TO-264
0.075 51 APT51M50J 51 APT51F50J ISOTOP
0.062 84 APT84M50B2 84 APT84F50B2 T-MAX or TO-264
0.062 58 APT58M50J 58 APT58F50J ISOTOP
0.036 103 APT100M50J 103 APT100F50J ISOTOP
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
Low-Voltage Power MOS V® MOSFETs/FREDFETs
BVDSS (V) Rds(on)
Max(Ω) Id (A) MOSFET
Part Number Id (A) FREDFET
Part Number
Package
Style
300
0.085 40 APT30M85BVRG TO-247
0.070 48 APT30M70BVRG 48 APT30M70BVFRG TO-247 or
D3PAK
0.040 70 APT30M40JVR 70 APT30M40JVFR ISOTOP®
0.019 130 APT30M19JVR 130 APT30M19JVFR ISOTOP
200
0.045 56 APT20M45BVRG 56 APT20M45BVFRG TO-247
0.038 67 APT20M38BVRG TO-247 or D3PAK
0.022 100 APT20M22B2VRG T-MAX® or TO-264
0.011 175 APT20M11JVR 175 APT20M11JVFR ISOTOP
Part numbers for D3PAK packages—replace “B” with “S” in part number. Part numbers for TO-264 packages—replace “B2” with “L” in part number.
ISOTOP®[J]
SOT-227
(Isolated Base)
TO-247[B]
T-MAX [B2]
D3PAK[S]
TO-264[L]
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10
Ultra-Fast, Low Gate Charge MOSFETs
Bvdss (V) Rds(on)
Max(Ω) Id (A) MOSFET
Part Number
FREDFET
Part Number
Package
Style
1200
4.700 3.5 APT1204R7BFLLG TO-247 or D3PAK
1.400 9 APT1201R4BFLLG TO-247
0.570 22 APT12057B2LLG T-MAX®
1000
0.900 12 APT10090BLLG TO-247
0.780 14 APT10078BLLG TO-247 or D3PAK
0.450 23 APT10045B2LLG T-MAX or TO-264
0.450 21 APT10045JLL ISOTOP®
0.350 28 APT10035B2LLG T-MAX
0.350 25 APT10035JLL ISOTOP
0.260 38 APT10026L2FLLG TO-264 MAX
0.260 30 APT10026JLL APT10026JFLL ISOTOP
0.210 37 APT10021JLL APT10021JFLL ISOTOP
800
0.140 52 APT8014L2LLG APT8014L2FLLG TO-264 MAX
0.110 51 APT8011JLL APT8011JFLL T-MAX or TO-264
0.200 38 APT8020B2LL T-MAX
0.200 33 APT8020JLL ISOTOP or D3PAK
500
0.140 35 APT5014BLLG TO-247
0.100 46 APT5010B2LLG APT5010B2FLLG T-MAX or TO-264
0.065 67 APT50M65B2LLG APT50M65B2FLLG T-MAX or TO-264
0.065 58 APT50M65JLL APT50M65JFLL ISOTOP
0.075 51 APT50M75JLL APT50M75JFLL ISOTOP
0.075 57 APT50M75B2LLG T-MAX or TO-264
0.050 71 APT50M50JLL ISOTOP
0.038 88 APT50M38JLL ISOTOP
ISOTOP®[J]
SOT-227
(Isolated Base)
TO-247[B]
T-MAX®[B2]
For 250 kHz–2 MHz Switching Applications
The ultra-fast, low gate charge MOSFET family combines the lowest gate charge available in the industry with Microchip’s propri-
etary self-aligned aluminum metal gate structure. The result is a MOSFET capable of extremely fast switching speeds and very-low
switching losses. The metal gate structure and the layout of these chips provide an internal Series Gate Resistance (EGR) an order
of magnitude lower than competitive devices built with a polysilicon gate.
These devices are ideally suited for high-frequency and pulsed high-voltage applications.
Typical Applications
• Class D ampliers up to 2 MHz
• High-voltage pulsed DC
• AM transmitters
• Plasma deposition/etch
Features
• Series gate resistance (RG) <0.1Ω
• TR and TF times of <10 ns
• Industry’s lowest gate charge
Benets
• Fast switching, uniform signal propagation
• Pulse power applications
• Fast switching, reduced gate drive power
Power Portfolio 11
Super Junction MOSFETs
Bvdss (V) Rds(on)(Ω) Id(cont) (A) Part Number Package Style
900 C3 Technology
0.120 36 APT36N90BC3G TO-247
800
0.450 11 APT11N80BC3G TO-247
0.145 34 APT34N80B2C3G T-MAX® or TO-264
0.145 34 APT34N80LC3G TO-264
650
0.035 94 APT94N65B2C3G T-MAX or TO-264
0.070 47 APT47N65BC3G TO-247 or D3PAK
0.070 47 APT47N60BC3G TO-247 or D3PAK
600 0.035 77 APT77N60JC3 ISOTOP®
0.042 94 APT94N60L2C3G 264-MAX™
600
Server Series
0.045 60 APT60N60BCSG TO-247 or D3PAK
C6 Technology
0.041 77 APT77N60BC6 TO-247 or D3PAK
0.070 53 APT53N60BC6 TO-247 or D3PAK
0.099 38 APT38N60BC6 TO-247 or D3PAK
0.125 30 APT30N60BC6 TO-247 or D3PAK
0.035 106 APT106N60B2C6 T-MAX or TO-264
650 0.041 85 APT97N65B2C6 T-MAX or TO-264
0.035 94 APT94N65B2C6 T-MAX
Part numbers for D3PAK packages—replace “B” with “S” in part number.
BVdss (V) Rds(on)(Ω) Id(cont) (A) SOA (W) Part Number
600
0.125 49 325 APL602B2G
0.125 43 325 APL602J
500
0.090 58 325 APL502B2G
0.090 52 325 APL502J
Part numbers for TO-264 packages—replace “B2” with “L” in part number.
TO-247[B]
ISOTOP®[J]
SOT-227
(Isolated Base)
ISOTOP [J]
SOT-227
(Isolated Base)
T-MAX®[B2]
T-MAX [B2]
D3PAK[S]
TO-268
TO-264[L]
TO-264[L]
264-MAX™[L2]
Linear MOSFETs
What is a Linear MOSFET?
A MOSFET specically designed to be more robust than a
standard MOSFET when operated with both high voltage and
high current near DC conditions (>100 msecs).
The Problem with SMPS MOSFETs
MOSFETs optimized for high-frequency SMPS applications
have poor high voltage DC SOA. Most SMPS-type MOSFETs
over state SOA capability at high voltage on the datasheets.
Above ~30V and DC conditions, SOA drops faster than is
indicated by Power Disipation (PD) limited operation. For
pulsed loads (t <10 ms), there is generally no problem using a
standard MOSFET.
Technology Innovation
Introduced in 1999, Microchip modied its proprietary
patented self-aligned metal gate MOSFET technology for
enhanced performance in high voltage, linear applications.
These linear MOSFETs typically provide 1.5–2.0 times the DC
SOA capability at high voltage compared to other MOSFET
technologies optimized for switching applications.
A Design Will Need Linear MOSFETs in the
Following Situations
• High current and less than 200 volts at less than 100
milliseconds
• Used as a variable power resistor
• Soft start application (limit surge currents)
• Linear amplier circuit
Typical Applications
• Active loads above 200 volts, such as DC dynamic loads
for testing power supplies, batteries, fuel cells, etc.
• High voltage, high current, constant current sources
www.microchip.comwww.microsemi.com
12
SiC Schottky Barrier Diodes
Part Number Voltage (V) If (A) Vf (V) (Typical at 25°C) Package
MSC010SDA070B
700
10 1.5 TO-247
MSC010SDA070K 10 1.5 TO-220
MSC030SDA070B 30 1.5 TO-247
MSC030SDA070K 30 1.5 TO-220
MSC030SDA070S 30 1.5 D3PAK
MSC050SDA070B 50 1.5 TO-247
MSC050SDA070S 50 1.5 D3PAK
MSC010SDA120B
1200
10 1.5 TO-247
MSC010SDA120K 10 1.5 TO-220
MSC015SDA120B 15 1.5 TO-247
MSC030SDA120B 30 1.5 TO-247
MSC030SDA120B 30 1.5 TO-220
MSC030SDA120S 30 1.5 D3PAK
MSC050SDA120B 50 1.5 TO-247
MSC050SDA120S 50 1.5 D3PAK
MSC010SDA170B
1700
10 1.5 TO-247
MSC030SDA170B 30 1.5 TO-247
MSC050SDA170B 50 1.5 TO-247
Si Schottky Barrier Diodes, Fast and Ultra-Fast Recovery Diodes
Microchip oers four series of discrete diode products: the medium-speed medium Vf D series, the high-speed DQ series, the
silicon Schottky S series and the SiC Schottky MSCxxxSDxxxx series. These series of diodes are designed to provide high-quality
solutions to a wide range of high-voltage, high-power application requirements, ranging from fast recovery for continuous conduc-
tion mode power factor correction to low conduction loss for output rectication. The following table summarizes each product
family’s distinguishing features and potential applications.
The following graph shows the relative recovery speed and forward voltage positions of 600 V, D and DQ series diodes.
600V, 30A Diode Recovery Charge vs. V
F
IF=30A, VDD=400V, diF/dt=–200 A/ms, TJ=125ºC
Forward Voltage (V)
QRR (μC)
1000
800
600
400
200
0
1.0 1.5 2.0 2.5
DQ
SiC
D
TO-247[B]
D3PAK[S]
TO-220[K]
Power Portfolio 13
SiC Schottky Barrier Diodes
Series
Voltage Ratings
Features Applications Comment
D200, 300, 400, 600,
1000, 1200
Medium Vf
Medium speed
Freewheeling diode
Output rectier
DC–DC converter
Proprietary platinum process
DQ 600, 1000, 1200 High speed
Avalanche rated
PFC
Freewheeling diode
DC–DC converter
Stepped EPI improves softness Proprietary
platinum process
Schottky 200 Low Vf
Avalanche rated
Output rectier
Freewheeling diode
DC–DC converter
SiC Schottky 700, 1200, 1700 Zero reverse recovery
PFC
Freewheeling diode
DC–DC converter
Low switching losses, high power density and
high-temperature operation
www.microchip.comwww.microsemi.com
14
Si Schottky Barrier Diodes, Fast and
Ultra-Fast Recovery Diodes
Volts I (A) Volts Typ
25°C
t(ns) Typ
25°C
Q(nC) RR Typ
125°C at If = If (avg)
Diode
Series
Part
Number Package
Single
1200
15 2.8 21 960 DQ APT15DQ120BG TO-247
15 2.8 21 960 DQ APT15DQ120KG TO-220
15 2.0 32 1300 D APT15D120BG TO-247
15 2.0 32 1300 D APT15D120KG TO-220
30 2.8 24 1800 DQ APT30DQ120BG TO-247
30 2.8 24 1800 DQ APT30DQ120KG TO-220
30 2.0 31 3450 D APT30D120BG TO-247
40 2.8 26 2200 DQ APT40DQ120BG TO-247
60 2.8 30 2800 DQ APT60DQ120BG TO-247
60 2.0 38 4000 D APT60D120BG TO-247 or D3PAK
75 2.8 32 3340 DQ APT75DQ120BG TO-247
1000
15 2.5 20 810 DQ APT15DQ100BG TO-247
15 2.5 20 810 DQ APT15DQ100KG TO-220
15 1.9 28 1550 D APT15D100KG TO-220
30 2.5 22 1250 DQ APT30DQ100BG TO-247
30 2.5 22 1250 DQ APT30DQ100KG TO-247
30 1.9 29 2350 D APT30D100BG TO-247
40 2.5 24 1430 DQ APT40DQ100BG TO-247
60 2.5 29 2325 DQ APT60DQ100BG TO-247
60 1.9 34 3600 D APT60D100BG TO-247 or D3PAK
75 2.5 33 2660 DQ APT75DQ100BG TO-247
600
15 2.0 16 250 DQ APT15DQ60BG TO-247
15 2.0 16 250 DQ APT15DQ60KG TO-220
15 1.6 21 520 D APT15D60BG TO-247
15 1.6 21 520 D APT15D60KG TO-220
30 2.0 19 400 DQ APT30DQ60BG TO-247
30 2.0 19 400 DQ APT30DQ60KG TO-220
30 1.6 23 700 D APT30D60BG TO-247
40 2.0 22 480 DQ APT40DQ60BG TO-247
60 2.0 26 640 DQ APT60DQ60BG TO-247
60 1.6 40 920 D APT60D60BG TO-247 or D3PAK
75 2.0 29 650 DQ APT75DQ60BG TO-247
400
30 1.3 22 360 D APT30D40BG TO-247
60 1.3 30 540 D APT60D40BG TO-247
200
30 1.1 21 150 D APT30D20BG TO-247
30 0.83 25 448 Schottky APT30S20BG TO-247 or D3PAK
60 1.1 30 250 D APT60D20BG TO-247
60 0.83 35 490 Schottky APT60S20BG TO-247 or D3PAK
100 0.89 40 690 Schottky APT100S20BG TO-247
Part numbers for D3 package—replace “B” with “S” in part number.
TO-247[B]
T-MAX [B2]
D3PAK[S]
TO-268
TO-220[K]
Power Portfolio 15
Si Schottky Barrier Diodes, Fast and
Ultra-Fast Recovery Diodes
Volts
I (A)
Volts Typ
25°C
t(ns) Typ
25°C
Q(nC) RR Typ
125°C at If = If (avg)
Diode
Series
Part
Number Package
Dual
1200
2x27 2 31 3450 D APT2X30D120J
ISOTOP®
2x30 2.6 25 1800 DQ APT2X30DQ120J
2x53 2.0 38 4000 D APT2X60D120J
2x60 2.5 30 2890 DQ APT2X60DQ120J
2x93 2.0 47 5350 D APT2X100D120J
2x100 2.4 45 5240 DQ APT2X100DQ120J
1000
2x28 1.9 29 2350 D APT2X30D100J
2x55 1.9 34 3600 D APT2X60D100J
2x60 2.2 30 2350 DQ APT2X60DQ100J
2x95 1.9 43 4050 D APT2X100D100J
2x100 2.1 45 3645 DQ APT2X100DQ100J
600
2x30 1.8 20 400 DQ APT2X30DQ60J
2x30 1.6 23 700 D APT2X30D60J
2x60 1.7 27 650 DQ APT2X60DQ60J
2x60 1.6 40 920 D APT2X60D60J
2x100 1.6 30 980 DQ APT2X100DQ60J
2x100 1.6 34 1450 D APT2X100D60J
400
2x30 1.3 22 360 D APT2X30D40J
2x60 1.3 30 540 D APT2X60D40J
2x100 1.3 37 1050 D APT2X100D40J
300 2x100 1.2 36 650 D APT2X101D30J
200
2x30 0.80 25 448 Schottky APT2X31S20J
2x60 0.83 35 490 Schottky APT2X61S20J
2x100 1.1 39 840 D APT2X100D20J
2x100 0.89 40 690 Schottky APT2X101S20J
1200 2x30 2.8 26 2100 DQ APT30DQ120BCTG TO-247 [BCT]
1000
2x15 2.5 20 810 DQ APT15DQ100BCTG TO-247 [BCT]
2x15 1.9 28 1550 D APT15D100BCTG TO-247 [BHB]
2x30 1.9 29 2360 D APT30D100BCTG TO-247 [BHB]
2x30 1.9 30 2350 D APT30D100BHBG TO-247 [BCA]
2x60 2.5 29 2325 DQ APT60DQ100LCTG TO-264 [LCT]
600
2x60 1.9 35 3600 D APT60D100LCTG TO-264 [LCT]
2x15 1.6 21 520 D APT15D60BCTG TO-247
2x15 2.0 15 250 DQ APT15DQ60BCTG TO-247 [BCT]
2x15 1.6 20 520 D APT15D60BCAG TO-247 [BCA]
2x30 2.0 22 480 DQ APT30DQ60BHBG TO-247 [BHB]
2x30 2.0 19 400 DQ APT30DQ60BCTG TO-247 [BCT]
2x30 1.6 23 700 D APT30D60BCTG TO-247 [BCT]
2x30 1.6 25 700 D APT30D60BHBG TO-247 [BHB]
2x30 1.6 25 700 D APT30D60BCAG TO-247 [BCA]
2x40 2.0 22 480 DQ APT40DQ60BCTG TO-247 [BCT]
2x60 2.0 26 640 DQ APT60DQ60BCTG TO-247 [BCT]
2x60 1.6 30 920 D APT60D60LCTG TO-264 [LCT]
400 2x30 1.3 22 360 D APT30D40BCTG TO-247 [BCT]
2x60 1.3 30 540 D APT60D40LCTG TO-264 [LCT]
300 2x30 1.2 25 1300 D APT30D30BCTG TO-247 [BCT]
200
2x30 1.1 21 150 D APT30D20BCTG TO-247 [BCT]
2x30 1.1 21 150 D APT30D20BCAG TO-247 [BCA]
2x30 0.80 25 448 Schottky APT30S20BCTG TO-247 [BCT]
2x60 0.83 35 490 Schottky APT60S20B2CTG T-MAX® [B2CT]
2x100 0.89 40 690 Schottky APT100S20LCTG TO-264 [LCT]
Part numbers for parallel conguration: replace 30, 60, or 100 with 31, 61, or 101, unless Schottky. Example: 2X30D120J becomes
2X31D120J. Part numbers for D3PAK packages—replace “B” with “S” in part number.
TO-264
T-Max
TO-247
TO-247
TO-247[BCT]
Common cathode
TO-247[BHB]
Half-bridge
TO-247[BCA]
Common anode
TO-264[LCT]
Common cathode
T-MAX® [B2CT]
Common cathode
ISOTOP [J]
SOT-227
Antiparallel
Conguration
(Isolated Base)
www.microchip.comwww.microsemi.com
16
High-Voltage RF MOSFETs
Part Number Pout
(W)
Freq.
(MHz) Vdd/Bvdss (V) Rthjc
(OC/W)
Package
Style
Class of
Operation
ARF449AG/BG 90 120 150/450 0.76 TO-247 A-E
ARF463AG/BG 100 100 125/500 0.7 TO-247 A-E
ARF463AP1G/BP1G 100 100 125/500 0.7 TO-247 A-E
ARF446G/ARF447G 140 65 250/900 0.55 TO-247 A-E
ARF521 150 150 165/500 0.6 M174 A-E
ARF460AG/BG 150 65 125/500 0.5 TO-247 A-E
ARF461AG/BG 150 65 250/1000 0.5 TO-247 A-E
ARF465AG/BG 150 60 300/1200 0.5 TO-247 A-E
ARF468AG/BG 270 45 165/500 0.38 TO-264 A-E
ARF475FL 300 150 165/500 0.31 T3A A-E
ARF476FL 300 150 165/500 0.31 T3 A-E
ARF466AG/BG 300 45 200/1000 0.35 TO-264 A-E
ARF466FL 300 45 200/1000 0.13 T3A A-E
ARF479 300 150 165/500 0.31 T3C A-E
ARF469AG/BG 350 45 165/500 0.28 TO-264 A-E
ARF477FL 400 65 165/500 0.18 T3A A-E
ARF1500 750 40 125/500 0.12 T1 A-E
ARF1501 750 40 250/1000 0.12 T1 A-E
ARF1510 750 40 700/1000 0.12 T1 D
ARF1511 750 40 380/500 0.12 T1 D
ARF1519 750 25 250/1000 0.13 T2 A-E
D SS
GGSSSS
The ARF family of RF power MOSFETs is optimized for appli-
cations requiring frequencies as high as 150 MHz and operat-
ing voltages as high as 400V. Historically, RF power MOSFETs
were limited to applications of 50V or less. This limitation has
been removed by combining Microchip’s high-voltage MOS-
FET technology with RF-specic die geometries.
Higher Vdd means higher load impedance. For 150W output
from a 50V supply, the load impedance is only 8Ω. At 125V,
the load impedance is 50Ω. The higher impedance allows
simpler transformers and combiners. Paralleled devices can
still operate into reasonable and convenient impedances.
The increased operating voltage also lowers the DC current
required for any given power output, increasing eciency and
reducing the size, weight and cost of other system compo-
nents. High breakdown voltage is a necessity in high-ecien-
cy switchmode ampliers, such as class C-E, which can see
peak drain voltages of over 4x the applied Vdd.
High-Frequency RF MOSFETs
The VRF family of RF MOSFETs includes improved
replacements for industry-standard RF transistors.
They provide improved ruggedness by increasing
the Bvdss over 30 percent from the industry-stan-
dard 125V to 170V minimum. Low-cost angeless
packages are another improvement that shows
Microchip’s dedication to optimizing performance,
reducing cost and improving reliability. We will con-
tinue to oer more products with the new reduced-
cost angeless packages.
Part Number Pout
(W)
Freq.
(MHz)
Gain Typ
(dB)
E.Typ
(%) Vdd/Bvdss (V) Rthjc
(OC/W)
Package
Style
VRF148A 30 175 16 50 65/170 1.52 M113
VRF141 150 175 13 45 28/80 0.60 M174
VRF151 150 175 14 50 65/170 0.60 M174
VRF152 150 175 14 50 50/140 0.60 M174
VRF150 150 150 11 50 65/170 0.60 M174
VRF161 200 175 25 50 65/170 0.50 M177
VRF151G 300 175 16 55 65/170 0.30 M208
VRF2933 300 150 25 50 65/170 0.27 M177
VRF2944 400 150 25 50 65/170 0.22 M177
VRF154FL 600 30 17 45 65/170 0.13 T2
VRF157FL 600 30 21 45 65/170 0.13 T2
VRF164FL 600 30 21 45 65/170 0.10 T2
TO-247 TO-264
T1 T2
T3A T3C
T4 T4A T5
M208M113/M174/
M177
T2B
T3
T14
Power Portfolio 17
Drivers and Driver-RF MOSFET Hybrids
Part Number Pout (W) Freq. (MHz) Vdd/Bvdss (V) Package Style Class of Operation
DRF1200 400 30 15/1000 T2B D-E
DRF1201 600 30 15/1000 T2B D-E
DRF1300 1000 30 15/500 T4 D-E
DRF1301 1000 30 15/1000 T4 D-E
DRF1400 1000 30 15/500 T4 D-E
DRF1211 600 30 15/500 T2B D-E
DRF1410 1000 30 15/500 T4A D-E
DRF1510 2000 30 15/500 T5 D-E
Reference Designs
DRF1200/CLASS-E, 13.56 MHz DRF1200/
CLASS-E, 27.12 MHz
The DRF1200/Class-E single-ended RF generator is a refer-
ence design that allows the designer to evaluate an 85 percent
ecient 1000 W Class-E RF generator.
DRF1300/CLASS-D, 13.56 MHz
The DRF1300/Class-D push-pull RF generator is a reference
design that allows the designer to evaluate an 80-percent
ecient 2000 W Class-D RF generator.
DRF1400/Class-D, 13.56 MHz
The DRF1400/Class-D half-bridge RF generator is a reference
design that allows the designer to evaluate an 85-percent
ecient 2500 W Class-D RF generator.
SiC Reference Designs
SiC SP6LI Module Driver Reference Design
• The MSCSICSP6/REF3 half bridge driver featuring brand
new SP6LI (low inductance) power module with stray induc-
tance < 3 nH to fully benet from SiC and also designed to
allow for easy paralleling.
SiC SP3 Module Driver Reference Design
• The MSCSICSP3/REF2 reference design provides an
example of a highly isolated SiC MOSFET dual-gate driver
for the SiC SP3 phase leg modules.
3-Phase Vienna PFC Reference Design for EV
Chargers and Switch Mode Power Supplies
• 30 kW Vienna rectier topology with greater than 98.5%
peak eciency
• 3-phase input 400 VAC/208 VAC, 50 Hz/60 Hz with output
780V DC
• lMSCSICPFC/REF5
The DRF1200/01 hybrids integrate drivers, bypass capacitors
and RF MOSFETs into a single package. Integration maxi-
mizes amplier performance by minimizing transmission line
parasitics between the driver and the MOSFET. The DRF1300
and DRF1301 have two independent channels, each contain-
ing a driver and RF MOSFET in a push-pull conguration. The
DRF1400 is a half-bridge hybrid with symmetrically oriented
leads that can be eassily congured into a full-bridge con-
verter. The new DRF1510 is a full bridge product optimized for
maximum eciency in class D ampliers. All DRF parts feature
a proprietary anti-ring function to eliminate cross conduction in
bridge or push-pull topologies. All DRF parts can be externally
selected in either an inverting or non-inverting conguration.
www.microchip.comwww.microsemi.com
18
Power Modules Contents
Microchip combines a formidable array of technologies in
semiconductors, packaging and automated manufacturing to
produce a wide range of high-quality modules optimized for the
following traits:
• Reliability
• Eciency and electrical performance
• Low cost
• Space savings
• Reduced assembly time
The readily available standard module product line spans a
wide selection of semiconductor (including Silicon Carbide)
circuit topologies, voltage and current ratings, and packages.
If you need even more exibility or intellectual property protec-
tion, we can customize a standard module with a low setup
cost and short lead time. Unique requirements can be met with
Application Specic Power Modules (ASPM).
Microchip serves a broad spectrum of industrial applications for
welding, solar, induction heating, medical, UPS, motor control
and SMPS markets as well as high-reliability applications for
semicap, defense and aerospace markets. A wide selection
of construction materials enables Microchip to manufacture
modules with the following features:
• Extended temperature range: –60°C to 200°C
• High reliability
• Reduced size and weight
• High-reliability testing and screening options
• Short lead times
Microchip’s experience and expertise in power electronic
conversion brings the most eective technical support for
your new development.
• Isolated gate driver
• Snubbers
• Mix-and-match semiconductors
• Short-circuit protection
• Temperature and current sensing
• Parameter binning
Power Portfolio 19
Standard Electrical Congurations
Microchip oers a wide range of standard electrical congurations housed in a variety of packages to match your specic needs
for high power-density and performance. Various semiconductor types are oered in the same topology.
Electrical Topology IGBT
600V–1700V
MOSFET
75V–1200V
Diode
200V–1700V
Mix Si-SiC
600V–1200V
Full SiC
600 to 1700V
Asymmetrical bridge • •
Boost buck • •
Boost and buck chopper • • • •
Common anode •
Common cathode •
Dual boost and buck chopper • • •
Dual common source • •
Dual diode •
Full bridge • • • •
Full bridge with PFC • • •
Full bridge with secondary fast rectier bridge • • •
Full bridge with series and parallel diodes • •
Interleaved PFC • •
Linear single and dual switch •
Phase leg • • • •
Phase leg intelligent •
Phase leg with PFC • •
Phase leg with series and parallel diodes • •
Single switch • • •
Single switch with series and parallel diodes • •
Single switch with series diodes • •
3-Level NPC inverter • •
3-Level T-Type inverter • • •
3-Phase bridge • •
Triple dual common source • •
Triple phase leg • • • •
Trench3 MOSFET FRED IGBT Diode
Trench4 FREDFET Std Rectier MOSFET MOSFET
Trench4 Fast Super Junction Mosfet Diode
Trench5
www.microchip.comwww.microsemi.com
20
Packaging
ISOTOP ®
SP6-APTMODULE12 mm
S
P m
odu
l
e
D3SOT-227 D4
SP4 D1P SP6-P SP6LI
SP1
Industry-Standard Packages
• SOT-227 (ISOTOP)
• SP2 (17 mm)
• D3 (62 mm wide)
• D4 (62 mm wide)
ImprovedLow-ProlePackages
• SP1 (12 mm)
• SP3F (12 mm)
• SP4 (17 mm)
• SP6 (17 mm)
• SP6-P (12 mm)
• SP6LI (17 mm)
SP3F
SP2
SP6
Package Advantages
30 mm 17 mm
SP1 package
• Replaces two
SOT-227 parts
• Improved assembly
time and cost
• Height compatible
with SOT-227
• Copper base plate
SP3F package
• Replaces up to four
SOT-227 parts
• Reduced assembly
time and cost
• Height compatible
with SOT-227
• Copper base plate
SP6 package
• Oers the same footprint
and the same pinout
location as the popular
62 mm package but with
lower height, giving it the
following advantages:
• Reduced stray
inductance
• Reduced parasitic
resistance
• Higher eciency at
high frequency
SP6-P package
• Replaces up to six
SOT-227 parts
• Height compatible
with SOT-227
• Low-inductance
solder pins
• High current capability
Power Portfolio 21
Custom Power Modules
Microchip created the ASPM concept, and has been oering customized power modules since 1983. We oer a complete
engineered solution with mix-and-match capabilities in term of package, conguration, performance and cost.
Internal Printed Circuit Board
• Not available in all modules
• Used to route gate signals’ tracks to
small signal terminals
• Used to mount gate circuit and
protection in case of intelligent
power module
Terminals
• Screw-on or solder pins
• Provides power and signal connections
with minimum parasitic resistance and
inductance
Substrates
• Al2O3, AlN, and Si3N4 provide isolation
and good heat transfer to the base plate
Package
• Standard or custom
• Ensures environmental
protection and mechanical
robustness
Power Semiconductor Die
• IGBT, MOSFET, diode, SiC,
thyristor and switching devices
soldered to the substrates
and connected by ultrasonic
aluminum wire bonds
Base Plate
• Improves the heat transfer to
the heat sink
• Copper for good thermal
transfer
• AlSiC, CuW and CuMoCu for
improved reliability
www.microchip.comwww.microsemi.com
22
Custom Power Modules
The following table shows the three customization levels
Change Options: Die Substrate Base Plate Plastic Lid Terminals NRE Level MOQ
Electrical/thermal performance Die
P/N Material Material None to low
5 to 10
pieces
Electrical/thermal performance and
electrical conguration
Die
P/N
Material and
layout Material Low to medium
Electrical/thermal performance, and
electrical conguration, and module
housing
Die
P/N
Material and
layout
Material and
shape
Material and
shape Shape Medium to high
Microchip power modules are made of dierent sub-elements. Most of them are standard and can be reused to build innite
solutions for the end user. Microchip oers optimum development cost and cycle time thanks to long-term experience and a wide
range of available technologies.
Power Modules Features
• High power density
• Isolated and highly thermally-conductive substrate
• Internal wiring
• Minimum parasitics
• Minimum output terminals
• Mix-and-match components
• Fully engineered solutions
CustomerBenets
• Size and cost reduction
• Excellent thermal management
• Reduced external hardware
• Improved performance
• Reduced assembly time
• Optimizes losses
• Easy to upgrade, lower part count,
shorter time to market and IP protection
Flexibility
• Great level of integration
• Mix of silicon within the same package
• No quantity limitation
Technology
• Application oriented
Packaging Capability
• Standard and custom packages
• Standard and custom terminals
• Various substrate technologies
Reliability
• Coecient of thermal expansion matching
Applications
• Solar, welding, plasma cutting, semicap, MRI and X-ray,
EV/HEV, induction heating, UPS, motor control, data
communication
Power Portfolio 23
Rugged Custom Power Modules
Microchip has acquired much experience and know-how
in module customization that addresses rugged and wide
temperature range applications, oering solutions to meet the
expectations of next-generation integrated power systems for
the following attributes:
• Improved reliability
• Wider operating temperatures
• Higher power
• Higher eciency
• Lower weight and size
• Lower cost
Applications
• Avionics actuation system
• Avionics lift and pump
• Military ground vehicle
• Power supply and motor control
• Navy ship auxiliary power supply
• Down hole drilling
Test Capabilities
• X-Ray inspection
• Dielectric test (up to 6 kV)
• Electrical testing at specied temperature
• Burn-in
• Acoustic imaging
Reliability Testing Capabilities
• Power cycling
• Hermetic sealing
• Moisture
• Salt atmosphere
• HTGB
• Temperature shock
• HAST
• H3TRB
• Altitude
• Mechanical shock, vibration
Expertise Capabilities
• Cross-sectioning
• Structural analysis
All tests can be conducted upon demand by sampling or
at 100 percent. Tests can be performed in-house or in an
external lab.
• Our Core Competencies
• Extensive experience with rugged solutions for harsh
environments
• Wide range of silicon technologies
• Wafer fab capabilities
• Mix of assembly technologies
• Hermetic and robust plastic packages
• Custom test and burn-in solutions
• ISO9001-certied
• End-of-life (obsolescence) management
• Thermal management
• Material expertise
• Product life management and risk analysis
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24
DiceSolder Joint
DBC Substrate
Solder Joint
Base Plate
Rugged Custom Power Modules
Various proposed solutions oer dierent costs and low volume of entry
Industrial
Application
Extended
Temp.
Application
Harsh
Environment
Application
Standard
module •No NRE
Low-volume entry
Modied
standard • • Low NRE
Low-volume entry
Custom
module • • • Medium to high NRE
Low-volume entry
Module performance and reliability depends on the choice of assembly materials
Temperature Coecients of Expansion (TCEs) with more closely matched materials increase the module’s lifetime by reducing the
stress at both the interface and interior of the materials.
The higher the thermal conductivity, the lower the junction-to-case thermal resistance and the lower the delta of junction tempera-
ture of the device during operation. This will minimize the eect of power cycling on the dice.
Another important feature is the material density, particularly for the baseplate. Taking copper as the reference, AlSiC has a density
of 1/3, while CuW has twice the density. Therefore, AlSiC will provide substantial weight reduction while increasing reliability.
CTE
(ppm/K)
Thermal
Conductivity
(W/m.K)
Rθjc or
Rthjc
(K/W)
Silicon die (120 mm2)4 136
Cu/Al2O317/7 390/25 0.35
AlSiC/Al2O37/7 170/25 0.38
Cu/AlN 17/5 390/170 0.28
AlSiC/AlN 7/5 170/170 0.31
AlSiC/Si3N47/3 170/60 0.31
Material
CTE
(ppm/K)
(W/m.K)
Thermal
Conductivity
Density
(g/cc)
Base
plate
CuW
AlSiC
Cu
6.5
7
17
190
170
390
17
2.9
8.9
Substrate
Al2O3
AlN
Si3N4
7
5
3
25
170
60
Die Si
SiC
4
2.6
136
270
Power Portfolio 25
Power Module Part Numbering System
APT
MSC
GL 475 A 120 T D3 G
APT
MSC
C 60 DA
M24
T 1 G
I II III IV V VI VII VIII I II III IV V VI VII VIII I II III IV V VI VII
APT
MSC
DR 90 X 16 0 1 G
II
I
III
IV
VI
V
VII
VIII
II
I
III
IV
V
VI
VII
II
I
III
IV
VI
V
VII
TradeMark
IGBT Type:
GL = TRENCH 4
GLQ = High-speed TRENCH 4
GT = TRENCH 3
GTQ = TRENCH 5
GV = Mix NPT/TRENCH
CV = Mix TRENCH/Super Junction MOSFET
Current:
Ic at Tc = 80°C
Topology:
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost + Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level
U = Single Switch
VDA = Interleaved PFC
X = Three Phase Bridge
Blocking Voltage:
60 = 600V
120 = 1200V
170 = 1700V
Option:
A = AIN Substrate
C = SiC Diode
D = Series Diode
T = Temperature Sensor
W = Clamping Parallel Diode
Package:
1 = SP1
2 = SP2
3 = SP3F
P = SP6-P
D3 = D3 (62 mm)
D4 = D4 (62 mm)
G = RoHS-compliant
TradeMark
MOSFET Type:
MC - SM = MOSFET SiC
M = MOSFET
C = Super Junction MOSFET
Blocking Voltage:
08 = 75V 80 = 800V
10 = 100V 90 = 900V
20 = 200V 100 = 100V
50 = 500V 120 = 120V
60 = 600V
Topology:
A = Phase Leg
BB = Boost Buck
DA = Boost Chopper
DDA = Double Boost Chopper
DH = Asymmetrical Bridge
DSK = Double Buck Chopper
DU = Dual Common Source
H = Full Bridge
HR = T-Type 3-Level
SDA = Double Boost and Bypass Diode
SK = Buck Chopper
TA = Triple Phase Leg
TDU = Triple Dual Common Source
TL = Three Level NPC
U = Single Switch
VDA = Interleaved PFC
RDSON at Tc = 25°C
240 = 2400 mΩ
24 = 240 mΩ
M24 = 24 mΩ
Option:
A = AlN Substrate
C = SiC Diode
D = Series Diode
F = FREDFET
S = Series and Parallel Diodes
T = Temperature Sensor
U = Ultra-fast FREDFET
Package:
1 = SP1
2 = SP2
3 = SP3F
P = SP6-P
LI = SP6LI
G = RoHS-compliant
TradeMark
Diode Type:
DF = FRED
DR = Standard Rectier
DC = SiC
DSK = Schottky
Current:
IF at Tc =80°C
Topology:
AA = Dual Common Anode
BB = Boost Buck
AK = Dual Series
KK = Dual Common Cathode
H = Single Phase Bridge
U = Single Switch
X = Three Phase Bridge
Blocking Voltage:
20 = 200V
40 = 400V
60 = 600V
100 = 1000V
120 = 1200V
160 = 1600V
170 = 1700V
Package:
1 = SP1
3 = SP3F
D1P = D1P
G = RoHS-compliant
VIII
IGBT Modules MOSFET Modules Diode Modules
Optional Materials
Optional materials are available upon demand for most of the
listed standard power modules. Options are indicated with a
letter in the sux of the module part number. The temperature
sensor option is listed as “YES” or “OPTION” when available
for a standard part or on-demand.
The following tables list the options available for our product
categories.
AIN substrate for higher thermal conductivity
AlSiC base plate material for improved temperature
cycling capabilities
Temperature sensor (NTC or PTC) for case temperature
information
SiC diode for higher eciency
Si3N4 substrate
Press t terminals (for SP3F package only)
Gold pin terminals (SP1 only)
Phase change material option
A
M
T
C
N
E
X
L
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26
IGBT Power Modules
Chopper and Phase Leg
V(br)ces (V) IGBT Type Ic (A) Tc =
80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC …DA... or ...U2 ...SK... or ...U3 …A...
600 TRENCH 3
75 1.5 SP1 YES APTGT75DA60T1G APTGT75A60T1G
100 1.5 SP1 YES APTGT100DA60T1G APTGT100A60T1G
150 1.5 SP1 YES APTGT150DA60T1G APTGT150SK60T1G APTGT150A60T1G
150 1.5 SP3F YES APTGT150A60T3AG
200 1.5 SP2 – APTGT200A602G
200 1.5 SP3F YES APTGT200DA60T3AG APTGT200SK60T3AG APTGT200A60T3AG
300 1.5 SP4 YES APTGT300A60TG
300 1.5 SP6 OPTION APTGT300DA60G APTGT300SK60G APTGT300A60G
300 1.5 D3 OPTION APTGT300DA60D3G APTGT300SK60D3G APTGT300A60D3G
400 1.5 D3 OPTION APTGT400DA60D3G APTGT400A60D3G
450 1.5 SP6 OPTION APTGT450DA60G APTGT450SK60G APTGT450A60G
600 1.5 SP6 OPTION APTGT600DA60G APTGT600SK60G APTGT600A60G
650 TRENCH 4
FAST
50 1.85 SOT227 APT50GLQ65JU2
50 1.85 SOT227 APT100GLQ65JU2 APT100GLQ65JU3
100 1.85 SP1 YES APTGLQ100A65T1G
600 1.85 SP6 YES APTGLQ600A65T6G
650 TRENCH 5 60 1.65 SP1 YES APTGTQ100DA65T1G APTGTQ100SK65T1G APTGTQ100A65T1G
120 1.65 SP3F YES APTGTQ200DA65T3G APTGTQ200SK65T3G APTGTQ200A65T3G
1200 TRENCH 3
35 1.7 SP1 YES APTGT35A120T1G
35 1.7 SOT227 – APT35GT120JU2 APT35GT120JU3
50 1.7 SOT227 – APT50GT120JU2 APT50GT120JU3
50 1.7 SP1 YES APTGT50A120T1G
50 1.7 SP4 YES APTGT50DA120TG APTGT50SK120TG
75 1.7 SOT227 – APT75GT120JU2 APT75GT120JU3
75 1.7 SP1 YES APTGT75A120T1G
75 1.7 SP4 YES APTGT75DA120TG APTGT75SK120TG
100 1.7 SP1 YES APTGT100DA120T1G
100 1.7 SOT227 – APT100GT120JU2 APT100GT120JU3
100 1.7 SP3F YES APTGT100A120T3AG
100 1.7 SP4 YES APTGT100A120TG
150 1.7 SP6 OPTION APTGT150DA120G APTGT150SK120G APTGT150A120G
150 1.7 SP3F YES APTGT150A120T3AG
150 1.7 SP4 YES APTGT150A120TG
200 1.7 SP6 OPTION APTGT200DA120G APTGT200SK120G APTGT200A120G
200 1.7 D3 OPTION APTGT200DA120D3G APTGT200A120D3G
300 1.7 SP6 OPTION APTGT300DA120G APTGT300SK120G APTGT300A120G
300 1.7 D3 OPTION APTGT300A120D3G
400 1.7 SP6 OPTION APTGT400DA120G APTGT400SK120G APTGT400A120G
400 1.7 D3 OPTION APTGT400A120D3G
1200
TRENCH 4
40 1.85 SOT227 – APT40GL120JU2 APT40GL120JU3
90 1.85 SP1 YES APTGL90DA120T1G APTGL90A120T1G
180 1.85 SP2 – APTGL180A1202G
180 1.85 SP3F YES APTGL180A120T3AG
325 1.85 D3 OPTION APTGL325A120D3G
475 1.85 D3 OPTION APTGL475DA120D3G APTGL475SK120D3G APTGL475A120D3G
700 1.85 D3 OPTION APTGL700DA120D3G APTGL700SK120D3G
TRENCH 4
FAST
100 2.05 SP3F YES APTGLQ100A120T3AG
100 2.05 SP1 YES APTGLQ100DA120T1G
100 2.05 SP4 YES APTGLQ100A120TG
150 2.05 SP4 YES APTGLQ150A120TG
200 2.05 SP3F YES APTGLQ200A120T3AG
300 2.05 SP6C APTGLQ300SK120G APTGLQ300A120G
400 2.05 SP6 YES APTGLQ400A120T6G
1700 TRENCH 3
30 2 SP1 YES APTGT30A170T1G
50 2 SP1 YES APTGT50SK170T1G APTGT50A170T1G
50 2 SP4 YES APTGT50SK170TG APTGT50A170TG
100 2 SP4 YES APTGT100SK170TG APTGT100A170TG
150 2 SP6 OPTION APTGT150SK170G
200 2 D3 OPTION APTGT200A170D3G
225 2 SP6 OPTION APTGT225DA170G APTGT225SK170G APTGT225A170G
300 2 SP6 OPTION APTGT300DA170G APTGT300SK170G APTGT300A170G
300 2 D3 OPTION APTGT300DA170D3G APTGT300A170D3G
Power Portfolio 27
IGBT Power Modules
Three-Phase Bridge
V(br)ces (V) IGBT Type Ic (A)
Tc = 80ºC
Vce (on)
(V) at Rated Ic
Package
(see page 20) NTC Part Number
600 Trench 3
30 1.5 SP3F Yes APTGT30X60T3G
50 1.5 SP3F Yes APTGT50X60T3G
75 1.5 SP3F Yes APTGT75X60T3G
1200
Trench 3
25 1.7 SP3F Yes APTGT25X120T3G
35 1.7 SP3F Yes APTGT35X120T3G
Trench 4
40 1.85 SP3F Yes MSCGL40X120T3AG
40 1.85 SP3F Yes APTGL40X120T3G
Three-Phase Leg
V(br)ces (V) IGBT Type Ic (A)
TC = 80ºC
Vce (on)
(V) at Rated Ic
Package
(see page 20) NTC Part Number
600 Trench 3
50 1.5 SP6-P Option APTGT50TA60PG
150 1.5 SP6-P Option APTGT150TA60PG
650 Trench 5
30 1.65 SP3F Yes APTGTQ50TA65T3G
90 1.65 SP6-P Yes APTGTQ150TA65TPG
1200
Trench 3
75 1.7 SP6-P Option APTGT75TA120PG
100 1.7 SP6-P Yes APTGT100TA120TPG
Trench 4 120 1.85 SP6-P Yes APTGL120TA120TPG
Triple Dual Common Source
V(br)ces (V) IGBT Type Ic (A)
Tc = 80ºC
Vce (on)
(V) at Rated Ic
Package
(see page 20) NTC Part Number
600 Trench 3
50 1.5 SP6-P Option APTGT50TDU60PG
75 1.5 SP6-P Option APTGT75TDU60PG
100 1.5 SP6-P Option APTGT100TDU60PG
150 1.5 SP6-P Option APTGT150TDU60PG
1200
Trench 3 75 1.7 SP6-P Option APTGT75TDU120PG
Trench 4 120 1.85 SP6-P Yes APTGL120TDU120TPG
1700 Trench 3 50 2 SP6-P Option APTGT50TDU170PG
Dual Chopper
V(br)ces (V) IGBT
Type
Ic (A)
Tc = 80ºC
Vce (on)
(V) at Rated IcPackage NTC ...DDA... ...DSK...
600 Trench 3 50 1.5 SP3F Yes APTGT50DDA60T3G
75 1.5 SP3F Yes APTGT75DDA60T3G
650
Trench 5 60 1.65 SP3F Yes APTGTQ100DDA65T3G
Trench 4 Fast 50 1.85 SP3F Yes APTGLQ50DDA65T3G
Trench 4 Fast 50 1.85 SP3F Yes APTGLQ50VDA65T3G
1200
Trench 3 50 1.7 SP3F Yes APTGT50DDA120T3G
Trench 4 60 1.85 SP3F Yes APTGL60DDA120T3G
90 1.85 SP3F Yes APTGL90DDA120T3G APTGL90DSK120T3G
DDA
DSK
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28
IGBT Power Modules
Full and Asymmetrical
V(br)ces (V) IGBT Type Ic (A)
Tc = 80ºC
Vce (on)
(V) at Rated Ic
Package
(see page 20) NTC ...H... ...DH...
600 TRENCH 3
20 1.5 SP1 YES APTGT20H60T1G
30 1.5 SP1 YES APTGT30H60T1G
50 1.5 SP1 YES APTGT50H60T1G APTGT50DH60T1G
50 1.5 SP3F YES APTGT50H60T3G
75 1.5 SP1 YES APTGT75H60T1G
75 1.5 SP2 YES APTGT75H60T2G
75 1.5 SP3F YES APTGT75H60T3G
100 1.5 SP4 YES APTGT100H60TG APTGT100DH60TG
100 1.5 SP3F YES APTGT100H60T3G
150 1.5 SP4 YES APTGT150H60TG APTGT150DH60TG
200 1.5 SP6 APTGT200H60G APTGT200DH60G
300 1.5 SP6 APTGT300H60G APTGT300DH60G
TRENCH 4
FAST
30 1.95 SP3F YES APTGLQ30H65T3G
50 1.85 SP1 YES APTGLQ50H65T1G
50 1.85 SP3F YES APTGLQ50H65T3G
650 75 1.85 SP1 YES APTGLQ75H65T1G
100 1.85 SP3F YES APTGLQ100H65T3G
200 1.85 SP6C APTGLQ200H65G
300 1.85 SP6 OPTION APTGLQ300H65G
650 TRENCH 5 60 1.65 SP3F YES APTGTQ100H65T3G
1200
TRENCH 3
35 1.7 SP3F YES APTGT35H120T3G
50 1.7 SP3F YES APTGT50H120T3G
50 1.7 SP4 YES APTGT50DH120TG
75 1.7 SP3F YES APTGT75DH120T3G
75 1.7 SP4 YES APTGT75H120TG
100 1.7 SP4 YES APTGT100DH120TG
100 1.7 SP6 APTGT100H120G
150 1.7 SP6 APTGT150H120G APTGT150DH120G
200 1.7 SP6 APTGT200H120G APTGT200DH120G
TRENCH 4
40 1.85 SP1 YES APTGL40H120T1G
60 1.85 SP3F YES APTGL60H120T3G
90 1.85 SP3F YES APTGL90H120T3G
TRENCH 4
FAST
25 2.05 SP1 YES APTGLQ25H120T1G
25 2.05 SP2 YES APTGLQ25H120T2G
40 2.05 SP1 YES APTGLQ40H120T1G
75 2.05 SP3F YES APTGLQ75H120T3G
75 2.05 SP4 YES APTGLQ75H120TG
150 2.05 SP6C APTGLQ150H120G
200 2.05 SP6 OPTION APTGLQ200H120G
1700 TRENCH 3
30 2 SP3F YES APTGT30H170T3G
50 2 SP4 YES APTGT50H170TG APTGT50DH170TG
100 2 SP6 APTGT100H170G
150 2 SP6 APTGT150H170G APTGT150DH170G
Power Portfolio 29
IGBT Power Modules
Single Switch
Vces (V) IGBT Type Ic (A)
Tc = 80ºC
Vce (on)
(V) at Rated Ic
Package
(see page 20) NTC Part Number
600 Trench 3 750 1.5 D4 No APTGT750U60D4G
1200
Trench 3
400 1.7 D4 No APTGT400U120D4G
600 1.7 D4 No APTGT600U120D4G
Trench 4
475 1.85 D4 No APTGL475U120D4G
700 1.85 D4 No APTGL700U120D4G
1700 Trench 3
400 2 D4 No APTGT400U170D4G
600 2 D4 No APTGT600U170D4G
Single Switch + Series Diode
Vces (V) IGBT
Type
Ic (A)
Tc = 80ºC
Vce (on)
(V) at Rated Ic
Package
(see page 20) NTC Part Number
1200 Trench 4 475 1.85 SP6 No APTGL475U120DAG
Dual Common Source
Vces (V) IGBT Type Ic (A)
Tc = 80ºC
Vce (on) (V) at
Rated Ic
Package
(see page 20) NTC Part Number
600 Trench 3
100 1.5 SP4 Ye s APTGT100DU60TG
200 1.5 SP4 Ye s APTGT200DU60TG
300 1.4 SP6 No APTGT300DU60G
600 1.4 SP6 No APTGT600DU60G
1200 Trench 3
50 1.7 SP4 Yes APTGT50DU120TG
75 1.7 SP4 Yes APTGT75DU120TG
100 1.7 SP4 Ye s APTGT100DU120TG
150 1.7 SP6 No APTGT150DU120G
150 1.7 SP4 Ye s APTGT150DU120TG
200 1.7 SP6 No APTGT200DU120G
300 1.7 SP6 No APTGT300DU120G
400 1.7 SP6 No APTGT400DU120G
1700 Trench 3
100 2 SP4 Yes APTGT100DU170TG
225 2 SP6 No APTGT225DU170G
300 2 SP6 No APTGT300DU170G
Intelligent Power Modules
Phase Leg
Vces (V) IGBT Type Ic (A)
Tc = 80ºC
Vce (on) (V) at
Rated Ic
Package
(see page 20) NTC Part Number
600 Trench 3 400 1.5 LP8 No APTLGT400A608G
1200 Trench 3 300 1.7 LP8 No APTLGT300A1208G
Trench 4 325 1.8 LP8 No APTLGL325A1208G
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30
MOSFET Power Modules
Chopper
Vdss (V) MOSFET Type Rds (on) (mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC DA...or...U2 SK...or...U3
100 MOS 5
11 100 SOT-227 No APT10M11JVRU2 APT10M11JVRU3
4.5 207 SP4 Yes APTM10DAM05TG APTM10SKM05TG
2.25 370 SP6 No APTM10DAM02G APTM10SKM02G
200
MOS 5 22 71 SOT-227 No APT20M22JVRU2 APT20M22JVRU3
MOS 7TM
8 147 SP4 Yes APTM20DAM08TG APTM20SKM08TG
5 250 SP6 Option APTM20DAM05G
4 300 SP6 Option APTM20DAM04G APTM20SKM04G
500
MOS 5 100 30 SOT-227 No APT5010JVRU2 APT5010JVRU3
MOS 7
100 30 SOT-227 No APT5010JLLU2 APT5010JLLU3
75 32 SOT-227 No APT50M75JLLU2 APT50M75JLLU3
19 125 SP6 Option APTM50DAM19G APTM50SKM19G
17 140 SP6 Option APTM50DAM17G APTM50SKM17G
MOS 8TM 65 43 SOT-227 No APT58M50JU2 APT58M50JU3
600
Super Junction
MOSFET
70 40 SOT-227 No APT40N60JCU2 APT40N60JCU3
24 70 SP1 Ye s APTC60SKM24T1G
900 120 25 SOT-227 No APT33N90JCU2 APT33N90JCU3
60 44 SP1 Ye s APTC90DAM60T1G APTC90SKM60T1G
1000 MOS 7 180 33 SP4 Yes APTM100DA18TG
90 59 SP6 Option APTM100DAM90G
MOS 8 330 17 SP1 Yes APTM100DA33T1G APTM100SK33T1G
1200 MOS 8 300 23 SP1 Yes APTM120DA30T1G
Dual Chopper
Vdss (V) MOSFET Type Rds (on)(mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC ...DDA... ...DSK...
100 MOS 5
19 50 SP3F Yes APTM10DSKM19T3G
9 100 SP3F Yes APTM10DSKM09T3G
500 MOS 7TM
100 24 SP3F Yes APTM50DDA10T3G
65 37 SP3F Yes APTM50DDAM65T3G
600 Super
Junction
MOSFET
45 38 SP1 Yes APTC60DDAM45T1G
70 29 SP1 Yes APTC60DDAM70T1G
35 54 SP3F Yes APTC60DDAM35T3G
24 70 SP3F Yes APTC60DDAM24T3G APTC60DSKM24T3G
800 150 21 SP3F Yes APTC80DDA15T3G
1000 MOS 7 350 17 SP3F Yes APTM100DSK35T3G
Power Portfolio 31
MOSFET Power Modules
Full Bridge
Vdss (V) MOSFET Type Rds (on)(mΩ) Id (A)
Tc = 80ºC Package NTC Part Number
100 FREDFET 5
4.5 207 SP6 No APTM10HM05FG
19 50 SP3F Yes APTM10HM19FT3G
9 100 SP3F Yes APTM10HM09FT3G
200 FREDFET 7
20 62 SP4 Yes APTM20HM20FTG
16 74 SP4 Yes APTM20HM16FTG
10 125 SP6 No APTM20HM10FG
8 147 SP6 No APTM20HM08FG
500 FREDFET 7
140 18 SP3F Yes APTM50H14FT3G
100 24 SP3F Yes APTM50H10FT3G
75 32 SP4 Yes APTM50HM75FTG
75 32 SP3F Yes APTM50HM75FT3G
65 37 SP4 Yes APTM50HM65FTG
65 37 SP3F Yes APTM50HM65FT3G
38 64 SP6 No APTM50HM38FG
35 70 SP6 No APTM50HM35FG
FREDFET 8 150 19 SP1 Ye s APTM50H15FT1G
600
Super Junction
MOSFET
70 29 SP1 Yes APTC60HM70T1G
45 38 SP1 Yes APTC60HM45T1G
83 21 SP2 Yes APTC60HM83FT2G
70 29 SP3F Yes APTC60HM70T3G
35 54 SP3F Yes APTC60HM35T3G
24 70 SP3F Yes APTC60HM24T3G
FREDFET 8 230 15 SP1 Ye s APTM60H23FT1G
800 Super Junction
MOSFET
150 21 SP1 Yes APTC80H15T1G
290 11 SP3F Yes APTC80H29T3G
150 21 SP3F Yes APTC80H15T3G
900 120 23 SP1 Yes APTC90H12T1G
60 44 SP3F Yes APTC90HM60T3G
1000 FREDFET 7
450 14 SP3F Yes APTM100H45FT3G
350 17 SP4 Yes APTM100H35FTG
350 17 SP3F Yes APTM100H35FT3G
180 33 SP6 No APTM100H18FG
FREDFET 8 460 14 SP3F Ye s APTM100H46FT3G
1200 FREDFET 7 290 25 SP6 No APTM120H29FG
FREDFET 8 1400 6 SP1 Ye s APTM120H140FT1G
Full Bridge + Series and Parallel
Vdss (V) MOSFET Type Rds (on)(mΩ) Id (A)
Tc = 80ºC Package NTC Part Number
200 MOS 7TM 20 62 SP4 Yes APTM20HM20STG
500 MOS 7 75 32 SP4 Yes APTM50HM75STG
1000 MOS 7 450 13 SP4 Yes APTM100H45STG
Asymmetrical Bridge
Vdss (V) MOSFET Type Rds (on)(mΩ) Id (A)
Tc = 80ºC Package NTC Part Number
100 MOS5 4.5 207 SP6 No APTM10DHM05G
500 MOS 7TM 38 64 SP6 No APTM50DHM38G
600 Super Junction
MOSFET 24 70 SP3F Yes APTC60DHM24T3G
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32
MOSFET Power Modules
Phase Leg
Vdss (V) MOSFET Type Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
100 FREDFET 5 4.5 207 SP4 Yes APTM10AM05FTG
2.25 370 SP6 Option APTM10AM02FG
200 FREDFET 7
10 125 SP4 Yes APTM20AM10FTG
8 147 SP4 Yes APTM20AM08FTG
5 250 SP6 Option APTM20AM05FG
5 280 LP8 MSCM20AM058G
4 300 SP6 Option APTM20AM04FG
500 FREDFET 7
38 64 SP4 Yes APTM50AM38FTG
35 70 SP4 Yes APTM50AM35FTG
19 125 SP6 Option APTM50AM19FG
17 140 SP6 Option APTM50AM17FG
600
Super Junction
MOSFET
45 38 SP1 Yes APTC60AM45T1G
35 54 SP1 Yes APTC60AM35T1G
24 70 SP1 Yes APTC60AM24T1G
24 70 SP2 No APTC60AM242G
FREDFET 8 110 30 SP1 Ye s APTM60A11FT1G
900 Super Junction
MOSFET 60 44 SP1 Yes APTC90AM60T1G
1000 FREDFET 7 180 33 SP4 Yes APTM100A18FTG
90 59 SP6 Option APTM100AM90FG
1200 FREDFET 7 290 25 SP4 Yes APTM120A29FTG
150 45 SP6 Option APTM120A15FG
Phase Leg + Series and Parallel
Vdss (V) MOSFET Type Rds (on) (mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
200 MOS 7TM 10 125 SP4 Yes APTM20AM10STG
6 225 SP6 No APTM20AM06SG
500 MOS 7 38 64 SP4 Yes APTM50AM38STG
24 110 SP6 No APTM50AM24SG
1000 MOS 7 230 26 SP4 Yes APTM100A23STG
130 49 SP6 No APTM100A13SG
1200 MOS 7 200 37 SP6 No APTM120A20SG
Phase Leg + Series Diodes
Vdss (V) MOSFET Type Rds (on)(mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
1000 MOS 7TM 130 49 SP6 No APTM100A13DG
1200 MOS 7 200 37 SP6 No APTM120A20DG
Triple Phase Leg
Vdss (V) MOSFET Type Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
75 MOSFET 4.2 90 SP6-P Option APTM08TAM04PG
100 FREDFET 5 19 50 SP6-P Option APTM10TAM19FPG
9 100 SP6-P Option APTM10TAM09FPG
200 FREDFET 7 16 74 SP6-P Option APTM20TAM16FPG
500 FREDFET 7 65 37 SP6-P Option APTM50TAM65FPG
600 Super Junction
MOSFET
35 54 SP6-P Option APTC60TAM35PG
24 70 SP6-P Yes APTC60TAM24TPG
800 150 21 SP6-P Option APTC80TA15PG
900 60 44 SP6-P Yes APTC90TAM60TPG
1000 FREDFET 7 350 17 SP6-P Option APTM100TA35FPG
Power Portfolio 33
MOSFET Power Modules
Three-Phase Bridge
VDss (V) MOSFET Type RDS (ON) (mÙ) ID (A) Tc = 80ºC Package NTC Part Number
200
FREDFET 5 16 77 SP4 MSCM20XM16F4G
FREDFET 5 10 84 SP3X MSCM20XM10T3XG
Triple Dual Common Source
Vdss (V) MOSFET Type Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
600 Super Junction
MOSFET
35 54 SP6-P Option APTC60TDUM35PG
800 150 21 SP6-P Option APTC80TDU15PG
Dual Common Source
Vdss (V) MOSFET Type Rds (on)(mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
100 MOS 5 2.25 370 SP6 No APTM10DUM02G
200 MOS 7TM
8 147 SP4 Yes APTM20DUM08TG
5 250 SP6 No APTM20DUM05G
4300 SP6 No APTM20DUM04G
1200 MOS 7 150 45 SP6 No APTM120DU15G
Single Switch
Vdss (V) MOSFET Type Rds (on) (mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
100 FREDFET 5 2.25 430 SP6 Option APTM10UM02FAG
1.5 640 SP6 Option APTM10UM01FAG
200 FREDFET 7 3 434 SP6 Option APTM20UM03FAG
500 FREDFET 7 9 371 SP6 Option APTM50UM09FAG
1000 FREDFET 7 60 97 SP6 Option APTM100UM60FAG
45 160 SP6 Option APTM100UM45FAG
1200 FREDFET 7 70 126 SP6 Option APTM120UM70FAG
Single Switch + Series Diode
Vdss (V) MOSFET Type Rds (on)(mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
1000 MOS 7TM 65 110 SP6 No APTM100UM65DAG
45 160 SP6 No APTM100UM45DAG
1200 MOS 7 70 126 SP6 No APTM120UM70DAG
Single Switch + Series and Parallel
Vdss (V) MOSFET Type Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
200 MOS 7TM 4 310 SP6 Option APTM20UM04SAG
500 MOS 7 13 250 SP6 Option APTM50UM13SAG
1000 MOS 7 65 110 SP6 Option APTM100UM65SAG
1200 MOS 7 100 86 SP6 Option APTM120U10SAG
Interleaved PFC
Vdss (V) MOSFET Type Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
600 Super Junction
MOSFET
45 38 SP1 Yes APTC60VDAM45T1G
24 70 SP3F Yes APTC60VDAM24T3G
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34
MOSFET Power Modules
Single and Dual Linear MOSFET
Vdss (V) MOSFET Type Rds (on)(mΩ) Shunt Resistor (mR) Package (see page 20) NTC Part Number
600 MOS4 Linear 125 20 SP3F Yes APTML602U12R020T3AG
1000 MOS4 Linear 600 20 SP1 Yes APTML100U60R020T1AG
Renewable Energy Power Modules
Full Bridge
Vces (V) Technology Ic (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Part Number
600
Mix Trench IGBT
& Super Junction
MOSFET
50 83MR/1.5 SP1 Yes APTCV40H60CT1G
50 45MR/1.5 SP3F Yes APTCV50H60T3G
PFC + Bypass Diode + Phase Leg
Vces (V) Technology Ic (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Special Part Number
600 Super Junction
MOSFET
38 45MR SP1 N/A 10 A PFC
SiC Diode APTC60AM45BC1G
38 45MR SP1 N/A APTC60AM45B1G
27 83MR SP1 N/A 10 A PFC
SiC Diode
PFC + Bypass Diode + Full Bridge
Vces (V) Technology Ic (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Special Part Number
600
Mix Trench IGBT
& Super Junction
MOSFET
38 1.5/45MR SP3F Yes 20 A PFC
SiC Diode APTCV60HM45BC20T3G
38 1.5/45MR SP3F Yes APTCV60HM45BT3G
Super Junction
MOSFET 29 70MR SP3F Yes APTC60HM70BT3G
SecondaryFastRectier+FullBridge
Vces (V) Technology Ic (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Special Part Number
600
Mix Trench IGBT
& Super Junction
MOSFET
38 1.5/45MR SP3F Yes 20 A SiC
Antiparallel Diode APTCV60HM45RCT3G
38 1.5/45MR SP3F Yes APTCV60HM45RT3G
Super Junction
MOSFET 29 70MR SP3F Yes APTC60HM70RT3G
Trench 3 50 1.5 SP3F Ye s APTGT50H60RT3G
MOSFET Power Modules
Power Portfolio 35
Renewable Energy Power Modules
Boost Buck
Vces (V) Technology Ic (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Part Number
600
Super Junction
MOSFET 70 24MR SP3F Yes APTC60BBM24T3G
Trench 3 100 1.5 SP3F Yes APTGT100BB60T3G
Three-Level NPC Inverter
Vces (V) Technology Ic (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Part Number
600 Trench 3
20 1.5 SP1 No APTGT20TL601G
30 1.5 SP1 No APTGT30TL601G
50 1.5 SP3F Yes APTGT50TL60T3G
50 1.5 SP1 No APTGT50TL601G
75 1.5 SP3F Yes APTGT75TL60T3G
100 1.5 SP3F Yes APTGT100TL60T3G
150 1.5 SP6 No APTGT150TL60G
200 1.5 SP6 No APTGT200TL60G
300 1.5 SP6 No APTGT300TL60G
650
Trench 3
300 1.5 SP6 No APTGT300TL65G
400 1.5 SP6 No APTGT400TL65G
Trench 4 Fast 50 1.85 SP3F Yes APTGLQ50TL65T3G
1200 Trench 4
60 1.85 SP3F Ye s APTGL60TL120T3G
240 1.8 SP6 No APTGL240TL120G
1700 Trench 3 100 2 SP6 No APTGT100TL170G
Vces (V) Technology
Rds (on)
Super Junction
MOSFET(mΩ)
Vce (on) IGBT (V)/
Ic (A)
Package
(see page 20) NTC Part Number
600
Mix Trench
IGBT and
Super
Junction
MOSFET
24 1.5/75 SP3F Yes APTCV60TLM24T3G
45 1.5/75 SP3F Yes APTCV60TLM45T3G
70 1.5/50 SP3F Yes APTCV60TLM70T3G
99 1.5/30 SP3F Yes APTCV60TLM99T3G
900 120 1.85/50 SP3F Yes APTCV90TL12T3G
T-Type 3-Level Inverter
Vces (V) Technology Ic (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Special Part Number
600/1200 Trench 4
Fast
40 2.05 SP3F Yes 10A/600 V SiC APTGLQ40HR120CT3G
80 2.05 SP3F Yes 30A/600 V SiC APTGLQ80HR120CT3G
200 2.05 SP6 No APTGLQ200HR120G
Renewable Energy Power Modules
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36
Renewable Energy Power Modules
ViennaRectier
VCES (V) IGBT Type IC (A) TC = 80ºC VCE (on) (V) at
Rated Ic Package NTC Part Number
600
SUPER
JUNCTION
MOSFET
19 99mR SP3F YES MSCC60VRM99CT3AG
40 45mR SP6-P YES MSCC60VRM45TAPG
81 23mR SP4 MSCC60AM23C4AG
650 TRENCH 5 80 1.65 SP1 MSCGTQ100HD65C1AG
900 SiC MOSFET 110 12mR SP3F MSCMC90AM12C3AG
Power Modules with SiC Schottky Diodes
SiC Schottky diodes oer superior
dynamic and thermal performance over
conventional silicon power diodes. The
main advantages of the SiC Schottky
diodes are:
• Essentially zero forward and reverse
recovery—reduced switch and diode
switching losses
• Temperature independent switching
behavior—stable high temperature
performance
• Positive temperature coecient of
VF—ease of parallel operation
• Usable 175°C junction temperature—
safely operate at higher temperatures
Extremely fast switching of SiC Schottky
diode enables designs with:
• Improved system eciency
• Higher reliability
• Lower system switching losses
• Lower system cost
• Smaller EMI lter
• Smaller magnetic components
• Smaller heat-sink
• Smaller switches, eliminates
snubbers
• Reduced system size
• Fewer/smaller components
Applications
• PFC
• Output rectication
• Solar inverter
• Motor control
• Snubber diode
Operating Frequency vs Drain Current
0
100
200
300
400
10 20 30 40 50 60
Drain Current (A)
Frequency (kHz)
Diode Power Modules with SiC Diodes
Dual Diode
Anti-Parallel
Parallel
Vrrm (V) DIODE
Type
IF (A) TC =
100ºC VF (V) TJ = 25ºC Package Anti-Parallel Parallel
700 SiC 50 1.5 SOT-227 MSC2X50DC70J MSC2X51DC70J
100 1.5 SOT-227 MSC2X100DC70J MSC2X101DC70J
1200 SiC
20 1.5 SOT-227 MSC2X20DC120J MSC2X21DC120J
40 1.5 SOT-227 MSC2X40DC120J MSC2X41DC120J
50 1.5 SOT-227 MSC2X50DC120J MSC2X51DC120J
60 1.5 SOT-227 MSC2X60DC120J MSC2X61DC120J
100 1.5 SOT-227 MSC2X100DC120J MSC2X101DC120J
Power Portfolio 37
Diode Power Modules with SiC Diodes
Full Bridge
Vrrm (V) DIODE Type IF (A) TC =
100ºC
VF (V) TJ =
25ºC Package Part Number
700 SiC
50 1.5 SP1 MSCDC50H701AG
50 1.5 SOT-227 MSC50DC70HJ
100 1.5 SP6C MSCDC100H70AG
200 1.5 SP6C MSCDC200H70AG
1200 SiC
50 1.5 SP1 MSCDC50H1201AG
50 1.5 SOT-227 MSC50DC120HJ
100 1.5 SP6C MSCDC100H120AG
200 1.5 SP6C MSCDC200H120AG
Phase Leg
VRRM (V) DIODE Type IF (A) TC = 100ºC VF (V) TJ = 25ºC Package Part Number
700 SiC
100 1.5 D1P MSCDC100A70D1PAG
150 1.5 D1P MSCDC150A70D1PAG
200 1.5 D1P MSCDC200A70D1PAG
300 1.5 SP6C MSCDC300A70AG
450 1.5 SP6C MSCDC450A70AG
600 1.5 SP6C MSCDC600A70AG
1200 SiC
100 1.5 D1P MSCDC100A120D1PAG
150 1.5 D1P MSCDC150A120D1PAG
200 1.5 D1P MSCDC200A120D1PAG
300 1.5 SP6C MSCDC300A120AG
450 1.5 SP6C MSCDC450A120AG
600 1.5 SP6C MSCDC600A120AG
Dual Common Cathode
VRRM (V) DIODE Type IF (A) TC =
100ºC
VF (V) TJ =
25 ºC Package Part Number
700 SiC
100 1.5 D1P MSCDC100KK70D1PAG
150 1.5 D1P MSCDC150KK70D1PAG
200 1.5 D1P MSCDC200KK70D1PAG
1200 SiC
100 1.5 D1P MSCDC100KK120D1PAG
150 1.5 D1P MSCDC150KK120D1PAG
200 1.5 D1P MSCDC200KK120D1PAG
3-Phase Bridge
VRRM (V) DIODE Type IF (A) TC =
100ºC
VF (V) TJ =
25ºC Package Part Number
700 SiC 50 1.5 SP1 MSCDC50X701AG
1200 SiC 50 1.5 SP1 MSCDC50X1201AG
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38
IGBT Power Modules with SiC Diodes
Boost Chopper
Vrrm (V) IGBT
Type
Id (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Part Number
1200 Trench 4 Fast 25 2.05 SOT-227 No APT25GLQ120JCU2
40 2.05 SOT-227 No APT40GLQ120JCU2
Dual Chopper
Vrrm (V) IGBT
Type
Id (A)
Tc = 80ºC
Vce (on) (V)
at Rated Ic
Package
(see page 20) NTC Part Number
1200 Trench 4 Fast 40 2.05 SP3F Yes APTGLQ40DDA120CT3G
MOSFETs and Super Junction MOSFET Power Modules
With SiC Diodes
Single Switch + Series FRED and SiC Parallel Diodes
Vdss (V) MOSFET Type Rds (on) (mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
1000 MOS 7 65 110 SP6 Option APTM100UM65SCAVG
1200 MOS 7 100 86 SP6 Option APTM120U10SCAVG
Power Modules With SiC Schottky Diodes
Chopper
Vdss (V) MOSFET
Type
Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC …DA… or U2 …SK… or U3
500 MOS 8 65 43 SOT-227 No APT58M50JCU2
600
Super
Junction
MOSFET
45 38 SOT-227 No APT50N60JCCU2
24 70 SP1 Yes APTC60SKM24CT1G
18 107 SP4 Yes APTC60DAM18CTG
900
Super
Junction
MOSFET
120 25 SOT-227 No APT33N90JCCU2
60 44 SP1 Yes APTC90DAM60CT1G APTC90SKM60CT1G
1000 MOS 8 330 20 SOT-227 No APT26M100JCU2 APT26M100JCU3
1200 MOS 8 560 15 SOT-227 No APT20M120JCU2 APT20M120JCU3
300 23 SP1 Yes APTM120DA30CT1G
Phase Leg + Series FRED and SiC Parallel Diodes
Vdss (V) MOSFET Type Rds (on) (mΩ) Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
500 MOS 7 38 67 SP4 Yes APTM50AM38SCTG
24 110 SP6 No APTM50AM24SCG
600 Super Junction
MOSFET
35 54 SP4 Yes APTC60AM35SCTG
24 70 SP4 Yes APTC60AM24SCTG
18 107 SP6 No APTC60AM18SCG
900
Super Junction
MOSFET
60 44 SP4 Yes APTC90AM60SCTG
800
150 21 SP4 Yes APTC80A15SCTG
100 32 SP4 Yes APTC80A10SCTG
75 43 SP6 No APTC80AM75SCG
1000 MOS 7 130 49 SP6 No APTM100A13SCG
Power Portfolio 39
Power Modules With SiC Schottky Diodes
Full Bridge + Series FRED and SiC Parallel Diodes
Vdss (V) MOSFET Type Rds (on) (mΩ) Id (A)
Tc = 80 ºC
Package
(see page 20) NTC Part Number
500 MOS 7 75 34 SP4 Yes APTM50HM75SCTG
600
Super Junction
MOSFET
70 29 SP4 Yes APTC60HM70SCTG
45 38 SP4 Yes APTC60HM45SCTG
800 290 11 SP4 Yes APTC80H29SCTG
900 120 23 SP4 Yes APTC90H12SCTG
1000 MOS 7 450 14 SP4 Yes APTM100H45SCTG
Triple Phase Leg
Vdss (V) MOSFET Type Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
600 Super Junction
MOSFET 24 87 SP6-P Yes APTC60TAM21SCTPAG
1000 MOS 7 350 50 SP6-P Yes APTM100TA35SCTPG
SiC MOSFET Power Modules
T-Type Three-Level Inverter
Vces (V) Technology Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
600/1200 IGBT and SiC
MOSFET
110 20 SP3F Yes APTMC120HR11CT3AG
40 50 SP3F Yes APTMC120HRM40CT3AG
Three-Level NPC Inverter
Vces (V) Technology Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
600 SiC MOSFET
110 20 SP3F Yes APTMC60TL11CT3AG
55 40 SP3F Yes APTMC60TLM55CT3AG
14 160 SP6 No APTMC60TLM14CAG
Phase Leg
Vces (V) Technology Rds (on)
(mΩ)
Id (A)
Tc = 80ºC Package NTC Part Number
1200 SiC MOSFET
55 40 SP1 YES APTMC120AM55CT1AG
25 80 SP3F YES APTMC120AM25CT3AG
20 108 SP1 YES APTMC120AM20CT1AG
16 102 D3 APTMC120AM16CD3AG
12 150 SP3F YES APTMC120AM12CT3AG
9 200 SP3F YES APTMC120AM09CT3AG
8 200 D3 APTMC120AM08CD3AG
1700 SiC MOSFET
60 40 SP1 YES APTMC170AM60CT1AG
30 80 SP1 YES APTMC170AM30CT1AG
Phase Leg: Very-Low Inductance Package
Vces (V) Technology Rds (on)(mΩ) Id (A) Tc = 80ºC Package NTC Part Number
1200 SiC MOSFET
6.7 210 SP6LI YES MSCMC120AM07CT6LIAG
4.2 307 SP6LI YES MSCMC120AM04CT6LIAG
2.5 475 SP6LI YES MSCMC120AM03CT6LIAG
2.1 586 SP6LI YES MSCMC120AM02CT6LIAG
1700 SiC MOSFET 7.5 207 SP6LI YES MSCMC170AM08CT6LIAG
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40
Diode Power Modules
Triple Phase Leg
Vces (V) Technology Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
1200 SiC MOSFET
34 55 SP3F Yes APTMC120TAM34CT3AG
33 60 SP6-P Yes APTMC120TAM33CTPAG
17 100 SP6-P Yes APTMC120TAM17CTPAG
12 150 SP6-P Yes APTMC120TAM12CTPAG
Boost Chopper
VCES (V) Technology RDS (on)
(mΩ)
ID (A)
TC = 80ºC
Package
(see page 20) NTC Part Number
1200 SiC MOSFET 34 50 SOT-227 No APT50MC120JCU2
17 100 SOT-227 No APT100MC120JCU2
Full Bridge
Vces (V) Technology Rds (on)
(mΩ)
Id (A)
Tc = 80ºC
Package
(see page 20) NTC Part Number
1200 SiC MOSFET 17 110 SP3F Yes APTMC120HM17CT3AG
Single Diode
Vrrm (V) Diode Type If (A) Tc = 80ºC Vf (V) Tc = 80ºC Package
(see page 20)
200
FRED
500 1.1
LP4
APTDF500U20G
400 500 1.5 APTDF500U40G
600 450 1.8 APTDF450U60G
1000 430 2.3 APTDF430U100G
1200 400 2.5 APTDF400U120G
Single Diode
Vrrm (V) Diode Type If (A)
Tc = 80ºC
Vf (V)
Tj = 25ºC
Package
(see page 20) Part Number
1600 Rectier 40 1.3 SP1 APTDR40X1601G
90 1.3 SP1 APTDR90X1601G
Power Portfolio 41
Common Cathode–
Common Anode–Doubler
Vrrm (V) Diode Type If (A)
per Diode
Vf (V)
Tj = 25ºC
Package
(see page
20)
Common Cathode Common Anode Doubler
200
FRED 400
1
SP6
APTDF400KK20G APTDF400AA20G APTDF400AK20G
600 1.6 APTDF400KK60G APTDF400AA60G APTDF400AK60G
1000 2.1 APTDF400KK100G APTDF400AA100G APTDF400AK100G
1200 2.4 APTDF400KK120G APTDF400AA120G APTDF400AK120G
1700 2.2 APTDF400KK170G APTDF400AA170G APTDF400AK170G
Full Bridge
Vrrm (V) Diode Type If (A)
Tc = 80ºC
Vf (A)
Tc = 80ºC
Package
(see page 20) Part Number
200
FRED
30 1 SOT-227 APT30DF20HJ
60 1 SOT-227 APT60DF20HJ
100 1 SP4 APTDF100H20G
600
30 1.8 SP1 APTDF30H601G
30 1.8 SOT-227 APT30DF60HJ
60 1.8 SOT-227 APT60DF60HJ
60 1.8 SP1 APTDF60H601G
100 1.6 SOT-227 APT100DL60HJ
100 1.6 SP1 APTDF100H601G
200 1.6 SP6 APTDF200H60G
1000
30 2.1 SOT-227 APT30DF100HJ
100 2.1 SP4 APTDF100H100G
200 2.1 SP6 APTDF200H100G
1200
30 2.6 SP1 APTDF30H1201G
60 2.6 SP1 APTDF60H1201G
75 1.6 SOT-227 APT75DL120HJ
200 2.4 SP6 APTDF200H120G
1700 50 1.8 SOT-227 APT50DF170HJ
75 1.8 SOT-227 APT75DF170HJ
1600 RECTIFIER 40 1.3 SOT-227 APT40DR160HJ
90 1.3 SOT-227 APT90DR160HJ
Diode Power Modules
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42
Power Module Outlines
D3PAK
or TO-268 TO-220 [KF]
TO-220 2-Lead TO-220 3-Lead
TO-247 3-Lead TO-247 2-Lead
T-MAX®TO-264
264 MAX™ISOTOP®
or SOT-227
Revised
8/29/97
Revised
4/18/95
Dimensions in Millimeters and (Inches) Dimensions in Millimeters and (Inches)
Pinout location depends on the module conguration. Please refer to the product datasheet for pin assignments. All dimensions in millimeters.
Power Portfolio 43
D3PAK D4
LP4 LP8
SP1 SP2
4.3±0.25
R5
40.8±0.5
45±0.25
17.5±0.5
11.5±0.5
51.6±0.5
70 ā0,20
57,10 ā1
30 ā0,20
62
ā1
M 6 (4x)
26,5 ā0,5
81 ā0,20
3
57,3 ā0,5
Pinout location depends on the module conguration. Please refer to the product datasheet for pin assignments. All dimensions in millimeters.
Power Module Outlines
www.microchip.comwww.microsemi.com
44
Power Module Outlines
SP3F SP4
SP6–Three Outputs SP6–Four Outputs, Version 1
SP6–Four Outputs, Version 2 SP6-P
26/10/12
0
7,50
13,50
7,50
13,50
93
48
Ø 6,40 (4x)
Ø 12 (4x)
12
14
R6,50
28 28
48
M 5 (3x)
62
7,8 MAX
2,80
x 0,5
108
16,98
16
22
6,50
15
26/10/12
0
7,50
13,50
17
5,10
7,50
13,50
18,20
12
14
93
48
Ø 6,40 (4x)
Ø 12 (4x)
R6,50
62
27 27
48 48
M 5 (4x)
17
108
22
7,8 MAX
15
2,80
x 0,5
6,50
15
26/10/12
0
7,50
13,50
7,50
13,50
12
14
93
48
Ø 6,40 (4x)
Ø 12 (4x)
2728
48 48
18,2018,20
R6,50
62
M 5 (4x)
17
108
22
7,8 MAX
15
2,80
x 0,5
6,50
15
Pinout location depends on the module conguration. Please refer to the product datasheet for pin assignments. All dimensions in millimeters.
Power Portfolio 45
Pinout location depends on the module conguration. Please refer to the product datasheet for pin assignments. All dimensions in millimeters.
SP6LI
D1P
SiC MOSFET Power Modules
www.microchip.comwww.microsemi.com
46
Power Portfolio 47
www.microchip.com
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