BSS8402DW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Mechanical Data Device BVDSS RDS(ON) Max Q1 Q2 60V -50V 13.5 @ VGS = 10V 10 @ VGS = -5V ID TA = +25C 115mA -130mA Description General Purpose Interfacing Switch Power Management Functions Analog Switch Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Complementary Pair Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D1 G2 S2 Q1 Q2 S1 G1 D2 Top View Internal Schematic Top View Ordering Information (Note 5) Part Number BSS8402DW-7-F BSS8402DW-13-F BSS8402DWQ-7 BSS8402DWQ-13 Notes: Compliance Standard Standard Automotive Automotive Case SOT363 SOT363 SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to https://www.diodes.com/quality/. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information KNP = Product Type Marking Code YM or YM= Date Code Marking Y or Y = Year (ex: F = 2018) M = Month (ex: 9 = September) Date Code Key Year 2003 Code P Month Code 2004 R 2005 S 2006 T ~ ~ 2018 F 2019 G 2020 H 2021 I 2022 J 2023 K 2024 L 2025 M 2026 N Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec 1 2 3 4 5 6 7 8 9 O N D BSS8402DW Document number: DS30380 Rev. 22 - 2 1 of 8 www.diodes.com March 2018 (c) Diodes Incorporated BSS8402DW Maximum Ratings - Total Device (@TA = +25C, unless otherwise specified.) Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Symbol Value Unit PD 200 mW RJA 625 C/W TJ, TSTG -55 to +150 C Maximum Ratings N-CHANNEL - Q1, 2N7002 Section (@TA = +25C, unless otherwise specified.) Characteristic Drain-Source Voltage Drain-Gate Voltage RGS 1.0M Gate-Source Voltage Drain Current (Note 6) Symbol Value Unit VDSS 60 V 60 V VDGR Continuous Pulsed Continuous Continuous @ +100C Pulsed VGSS ID 20 40 115 73 800 V mA Maximum Ratings P-CHANNEL - Q2, BSS84 Section (@TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -50 V Drain-Gate Voltage RGS 20K VDGR -50 V VGSS 20 V ID -130 mA Gate-Source Voltage Continuous Drain Current (Note 6) Continuous Note: 6. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Incorporated's suggested pad layout document, which can be found on our website at http://www.diodes.com/package-outlines.html. BSS8402DW Document number: DS30380 Rev. 22 - 2 2 of 8 www.diodes.com March 2018 (c) Diodes Incorporated BSS8402DW Electrical Characteristics N-CHANNEL - Q1, 2N7002 Section (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25C @ TC = +125C Symbol Min Typ Max Unit BVDSS 60 Test Condition 70 V VGS = 0V, ID = 10A A VDS = 60V, VGS = 0V IDSS 1.0 500 IGSS 10 nA VGS = 20V, VDS = 0V VGS(TH) 1.0 2.5 V VDS = VGS, ID = 250A @ TJ = +25C RDS(ON) @ TJ = +125C 3.2 4.4 7.5 13.5 ID(ON) 0.5 1.0 A gFS 80 mS Input Capacitance Ciss 22 50 pF Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance Crss 2.0 5.0 pF Turn-On Delay Time tD(ON) 7.0 20 ns Turn-Off Delay Time tD(OFF) 11 20 ns Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A DYNAMIC CHARACTERISTICS VDS = 25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 Electrical Characteristics P-CHANNEL - Q2, BSS84 Section (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max BVDSS -50 V VGS = 0V, ID = -250A Zero Gate Voltage Drain Current IDSS -1 -2 -100 A A nA VDS = -50V, VGS = 0V, TJ = +25C VDS = -50V, VGS = 0V, TJ = +125C VDS = -25V, VGS = 0V, TJ = +25C Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V Gate Threshold Voltage VGS(TH) -0.8 -2.0 V VDS = VGS, ID = -1mA Static Drain-Source On-Resistance RDS(ON) 10 VGS = -5V, ID = -0.100A gFS 0.05 S VDS = -25V, ID = -0.1A Input Capacitance Ciss 45 pF Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 12 pF Turn-On Delay Time tD(ON) 10 ns Turn-Off Delay Time tD(OFF) 18 ns Drain-Source Breakdown Voltage Unit Test Condition ON CHARACTERISTICS (Note 7) Forward Transconductance DYNAMIC CHARACTERISTICS VDS = -25V, VGS = 0V, f = 1.0MHz SWITCHING CHARACTERISTICS Note: VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V 7. Short duration pulse test used to minimize self-heating effect. BSS8402DW Document number: DS30380 Rev. 22 - 2 3 of 8 www.diodes.com March 2018 (c) Diodes Incorporated BSS8402DW N-CHANNEL - 2N7002 Section 7 1.0 0.8 0.6 0.4 0.2 0 6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN-SOURCE CURRENT (A) Tj = 25C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 On-Region Characteristics 5 4 3 2 1 0 5 0 2.5 2.0 1.5 VGS = 10V, ID = 200mA 5 4 3 2 1 1.0 -55 0 0 -30 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE (C) Figure 3 On-Resistance vs. Junction Temperature 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4 On-Resistance vs. Gate-Source Voltage 250 10 VDS = 10V PD, POWER DISSIPATION (mW) 9 VGS, GATE-SOURCE CURRENT (V) 0.4 0.6 0.8 1.0 ID, DRAIN CURRENT (A) Figure 2 On-Resistance vs. Drain Current 6 RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE () 3.0 0.2 8 7 6 5 4 3 2 200 150 100 50 1 0 0 0.2 0.4 0.8 0.6 ID, DRAIN CURRENT (A) Figure 5 Typical Transfer Characteristics BSS8402DW Document number: DS30380 Rev. 22 - 2 1 4 of 8 www.diodes.com 0 50 75 25 100 125 150 175 200 TA, AMBIENT TEMPERATURE (C) Figure 6 Max Power Dissipation vs. Ambient Temperature 0 March 2018 (c) Diodes Incorporated BSS8402DW 1000 2 I VGS(TH), GATE THRESHOLD VOLTAGE (V) IDSS, DRAIN LEAKAGE CURRENT (nA) )A n ( T N E R 100 R U C E G A K A E L 10 N I A R D ,S )V ( E G A T L O V D L O H S E R H T E T A G , )H TA = 150C TA = 125C TA = 85C TA = 25C 1.8 1.6 1.4 1.2 1 T ( S G S D V 0.8 1 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Junction Temperature 5 10 15 20 25 30 35 40 45 50 55 60 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 7 Typical Drain-Source Leakage Current vs. Voltage -50 P-CHANNEL - BSS84 Section -600 -1.0 -500 -0.8 ID, DRAIN CURRENT (A) ID, DRAIN-SOURCE CURRENT (mA) TA = 25C -400 -0.6 -300 -0.4 -200 -0.2 -100 0 -0.0 0 -1 -2 -3 -4 -5 V DS, DRAIN-SOURCE (V) (V) VDS, DRAIN-SOURCE VOLTAGE Figure 9 Drain-Source Current vs. Drain-Source Voltage 0 -5 -1 -2 -3 -4 -6 -7 -8 V GS, GATE-TO-SOURCE VOLTAGE (V) Figure 10 Drain Current vs. Gate-Source Voltage 15 10 VGS = -10V ID = -0.13A 8 RDS, ON-RESISTANCE () RDS(ON), STATIC DRAIN-SOURCE ON-RESISTANCE ( ) 9 7 6 5 4 3 12 9 6 3 2 TA = 125C 1 TA = 25 C 0 0 -50 0 -1 -2 -4 -5 -3 VGS, GATE TO SOURCE (V) (V) VGS, GATE TO SOURCE VOLTAGE Figure 11 On-Resistance vs. Gate-Source Voltage BSS8402DW Document number: DS30380 Rev. 22 - 2 5 of 8 www.diodes.com 0 25 50 75 100 125 150 (C)) TJ, JUNCTION TEMPERATURE ( Figure 12 On-Resistance vs. Junction Temperature March 2018 -25 (c) Diodes Incorporated BSS8402DW 25.0 1000 -IDSS, DRAIN LEAKAGE CURRENT (nA) )A n ( T N E R R 100 U C E G A K A E L N 10 IA R D ,S RDS, ON-RESISTANCE () 20.0 VGS = -3.5V VGS = -3V 15.0 VGS = -5V VGS = -4V 10.0 VGS = -6V 5.0 VGS = -8V VGS = -10V 0.0 -0.0 -0.2 -0.4 -0.6 -0.8 ID, DRAIN CURRENT (A) Figure 13 On-Resistance vs. Drain Current I1.0 TA = 150C TA = 125C TA = 85C TA = 25C S D 1 5 10 15 20 25 30 35 40 45 50 -VDS , DRAIN-SOURCE VOLTAGE (V) Figure 14 Typical Drain-Source Leakage Current vs. Voltage 2 -VGS(TH), GATE THRESHOLD VOLTAGE (V) )V ( E G A T L O V D L O H S E R H T E T A G , )H T ( S G 1.8 1.6 1.4 1.2 1 V - 0.8 -50 -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE (C) Figure 15 Gate Threshold Variation vs. Junction Temperature BSS8402DW Document number: DS30380 Rev. 22 - 2 6 of 8 www.diodes.com March 2018 (c) Diodes Incorporated BSS8402DW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions C G X Y Y1 G Y1 Y Value (in mm) 0.650 1.300 0.420 0.600 2.500 X BSS8402DW Document number: DS30380 Rev. 22 - 2 7 of 8 www.diodes.com March 2018 (c) Diodes Incorporated BSS8402DW IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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