JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
TISP4290J3BJ THRU TISP4395J3BJ
BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Description
Ion-Implanted Breakdown Region
-Precise and Stable Voltage
-Low Voltage Overshoot Under Surge
Designed for Transformer Center Tap (Ground Return)
Overvoltage Protection
-Enables GR-1089-CORE Compliance
-High Holding Current Allows Protection of Data Lines
with d.c. Power Feed
Can be Used to Protect Rugged Modems Designed for Exposed
Applications Exceeding TIA-968-A
The range of TISP4xxxJ3BJ devices are designed to limit overvoltages on telecom lines. The TISP4xxxJ3BJ is primarily designed to address
GR-1089-CORE compliance on data transmission lines with d.c. power feeding. When overvoltage protection is applied to transformer
coupled lines from the transformer center tap to ground, the total ground return current can be 200 A, 10/1000 and 1000 A, 2/10. The high
150 mA holding current is set above common d.c. feed system levels to allow the TISP4xxxJ3BJ to reset following a disturbance.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM
are limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a
low voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the devices switches off and restores normal system operation.
How to Order
Device Symbol
SMB Package (Top View)
Rated for International Surge Wave Shapes
Device Name
VDRM
V
V(BO)
V
TISP4290J3BJ 220 290
TISP4350J3BJ 275 350
TISP4395J3BJ 320 395
MDXXBGI
RT
T
R
SD4XAp
Wave Shape Standard
I
PPSM
A
2/10 GR-1089-CORE 1000
8/20 IEC 61000-4-5 800
10/160 TIA-968-A (FCC Part 68) 400
10/700 ITU-T K.20/21/45 350
10/560 TIA-968-A (FCC Part 68) 250
10/1000 GR-1089-CORE 200
............................................ UL Recognized Components
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Device Package Carrier Marking Code Std. Qty.
TISP4xxxJ3BJ SMB (DO-214AA) Embossed Tape Reeled TISP4xxxJ3BJR TISP4xxxJ3BJR-S 4xxxJ3 3000
Insert xxx value corresponding to device name.
For Standard
Termination Finish
Order As
For Lead Free
Termination Finish
Order As
*RoHS COMPLIANT
VERSIONS
AVAILABLE
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
TISP4xxxJ3BJ Overvoltage Protector Series
Rating Symbol Value Unit
Repetitive peak off-state voltage
'4290
'4350
'4395
VDRM
±220
±275
±320
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 1000
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 800
10/160 (TIA-968-A (Replaces FCC Part 68), 10/160 voltage wave shape) 400
4/250 (ITU-T K.20/21, 10/700 voltage wave shape, simultaneous) 370
5/310 (ITU-T K.20/21, 10/700 voltage wave shape, single) 350
5/320 (TIA-968-A (Replaces FCC Part 68), 9/720 voltage wave shape, single) 350
10/560 (TIA-968-A (Replaces FCC Part 68), 10/560 voltage wave shape) 250
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 200
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM 80
100
A
50 Hz, 1 cycle
60 Hz, 1 cycle
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A diT/dt 800 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ=25°C.
2. These non-repetitive rated currents are peak values of either polarity. The surge may be repeated after the device returns to its
initial conditions.
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
Parameter Test Conditions Min Typ Max Unit
IDRM
Repetitive peak off-
state current VD = ±VDRM
TA = 25 °C
TA = 85 °C
±5
±10 µA
V(BO) AC breakover voltage dv/dt = ±250 V/ms, RSOURCE =300
'4290
'4350
'4395
±290
±350
±395
V
V(BO)
Ramp breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
'4290
'4350
'4395
±303
±364
±409
V
V(BO)
Impulse breakover
voltage
2/10 wave shape, IPP =±1000 A, RS=2.5Ω,
(see Note 3)
'4290
'4350
'4395
±320
±386
±434
V
I(BO) Breakover current dv/dt = ±250 V/ms, RSOURCE =300Ω±600 mA
IHHolding current IT=±5A, di/dt=+/-30mA/ms ±150 mA
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85 VDRM ±5kV/µs
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)
IDOff-state current VD=±50 V TA = 85 °C±10 µA
Coff Off-state capacitance
f=1MHz, Vd=1V rms, V
D=0 105 125
pF
f=1MHz, Vd=1V rms, V
D=-1V 95 115
f=1MHz, Vd=1V rms, V
D=-2V 90 105
f=1MHz, Vd=1V rms, V
D=-50V 42 50
f=1MHz, Vd=1V rms, V
D=-100 V 35 40
NOTE 3: Dynamic voltage measurements should be made with an oscilloscope with limited band width (20 MHz) to avoid high frequency
noise.
Parameter Test Conditions Min Typ Max Unit
Thermal Characteristics
Parameter Test Conditions Min Typ Max Unit
RθJA Junction to free air thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000), TA=25°C,
(see Note 4) 90 °C/W
NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for Terminals T and R
All Measurements are Referenced to Terminal T
-v VDRM
IDRM
VD
IH
ITSM
IPPSM
V(BO)
ID
Quadrant I
Switching
Characteristic
+v
+i
V(BO)
VD
ID
IH
ITSM
IPPSM
-i
Quadrant III
Switching
Characteristic PM4XAG
VDRM
IDRM
I(BO )
I(BO )
IT
VT
IT
VT
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
Figure 2. Figure 3.
Figure 4. Figure 5.
OFF-STATE CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0.001
0.001
0. 1
1
10
100 TC4JAG
VD = ±50 V
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.90
0.95
1.00
1.05
1.10
1.15 TC4JAF
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
VT - On-State Voltage - V
0.7 1.5 2 3 4 5 7 15110
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
300
400
1
10
100
TA = 25 °C
tW = 100 µs
TC4JAA
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPERATURE
TJ - Junction Temperature - °C
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4JAD
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Typical Characteristics
Figure 6. Figure 7.
Figure 8.
NORMALIZED CAPACITANCE
vs
OFF-STATE VOLTAGE
VD - Off-state Voltage - V
0.5 1 2 3 5 10 20 30 50 100150
Capacitance Normalized to VD = 0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
TJ = 25 °C
Vd = 1 Vrms
TC4JABB
DIFFERENTIAL OFF-STATE CAPACITANCE
vs
RATED REPETITIVE PEA K OFF-STATE VOLTAGE
VDRM - Repetitive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300 350100
40
50
60
70
80
90
C = Coff(-2 V) - Coff(-50 V)
TC4JAE
NORMALIZED CAPACITANCE ASYMMETRY
vs
OFF-STATE VOLTAGE
VD — Off-State Voltage — V
0.5 0.7 2 3 4 5 7 20 30 4050110
Normalized Capacitance Asymmetry - %
0.0
0.5
1.0
1.5
2.0
2.5 TC4JCC
Vd = 1 V rms, 1 MHz
Vd = 10 mV rms, 1 MHz
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Rating and Thermal Characteristics
Figure 9. Figure 10.
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0.111 10100 1000
ITSM(t) - Non-Repetitive Peak On-State Current - A
2
3
4
5
6
7
8
9
15
20
30
40
10
TI4JAA
VGEN = 600 Vrms, 50/60 Hz
RGEN = 1.4*VGEN /ITSM(t)
EIA/JESD51-2 ENVIRONMENT
EIA/JESD51-3 PCB
TA = 25 °C
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00
JULY 2003 - REVISED FEBRUARY 2005
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP4xxxJ3BJ Overvoltage Protector Series
Applications Circuits
AI4MMABB
R
T
Ring
Detector
Hook
Switch
Polarity
Bridge
Relay
DC
Sink Signal
C1
TISP
4350J3BJ
Th1
High current
Fuse
F1
R1
D5
D6
D7
OC1
Protection
D1 D2
D3 D4
Isolation Barrier
T1
C2
R2
C3
AI4MMAB
Tx
TISP4350J3BJ
T
F1a
R
F1b
Rx
T
F2a
R
F2b
F1 & F2 = B1250T
TISP4350J3BJ
d.c.
feed
“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office.
“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.
