© Semiconductor Components Industries, LLC, 2017
August, 2019 − Rev. 3
1Publication Order Number:
FCPF067N65S3/D
FCPF067N65S3
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 44 A, 67 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
•700 V @ TJ = 150°C
•Typ. RDS(on) = 59 mW
•Ultra Low Gate Charge (Typ. Qg = 78 nC)
•Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
•100% Avalanche Tested
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Computing / Display Power Supplies
•Telecom / Server Power Supplies
•Industrial Power Supplies
•Lighting / Charger / Adapter
TO−220F
CASE 221AT
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
www.onsemi.com
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Data Code (Year & Week)
&K = Lot
FCPF067N65S3 = Specific Device Code
MARKING DIAGRAM
VDSS RDS(ON) MAX ID MAX
650 V 67 mW @ 10 V 44 A
POWER MOSFET
D
S
G
$Y&Z&3&K
FCPF
067N65S3
D
G
S
FCPF067N65S3
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ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol Parameter FCPF067N65S3 Unit
VDSS Drain to Source Voltage 650 V
VGSS Gate to Source Voltage − DC ±30 V
− AC (f > 1 Hz) ±30
IDDrain Current − Continuous (TC = 25°C) 44* A
− Continuous (TC = 100°C) 28*
IDM Drain Current − Pulsed (Note 1) 110* A
EAS Single Pulsed Avalanche Energy (Note 2) 214 mJ
IAS Avalanche Current (Note 2) 4.8 A
EAR Repetitive Avalanche Energy (Note 1) 0.46 mJ
dv/dt MOSFET dv/dt 100 V/ns
Peak Diode Recovery dv/dt (Note 3) 20
PDPower Dissipation (TC = 25°C) 46 W
− Derate Above 25°C 0.37 W/°C
TJ, TSTG Operating and Storage Temperature Range −55 to +150 °C
TLMaximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 4.8 A, RG = 25 W, starting TJ = 25°C.
3. ISD ≤ 22 A, di/dt ≤ 200 A/ms, VDD ≤ 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol Parameter FCPF067N65S3 Unit
RqJC Thermal Resistance, Junction to Case, Max. 2.7 _C/W
RqJA Thermal Resistance, Junction to Ambient, Max. 62.5
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity
FCPF067N65S3 FCPF067N65S3 TO−220F Tube N/A N/A 50 Units
FCPF067N65S3
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ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
OFF CHARACTERISTICS
BVDSS Drain to Source Breakdown Voltage VGS =0V, I
D= 1 mA, TJ=25_C650 − − V
VGS =0V, I
D= 1 mA, TJ= 150_C700 − − V
DBVDSS / DTJBreakdown Voltage Temperature
Coefficient
ID= 1 mA, Referenced to 25_C−0.72 −V/_C
IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS =0V − − 1mA
VDS = 520 V, TC= 125_C−2.2 −
IGSS Gate to Body Leakage Current VGS =±30 V, VDS =0V − − ±100 nA
ON CHARACTERISTICS
VGS(th) Gate Threshold Voltage VGS =V
DS, ID= 0.99 mA 2.5 −4.5 V
RDS(on) Static Drain to Source On Resistance VGS =10V, I
D=22A −59 67 mW
gFS Forward Transconductance VDS =20V, I
D=22A −29 −S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 400 V, VGS = 0 V, f = 1 MHz −3090 −pF
Coss Output Capacitance −68 −pF
Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS =0V −715 −pF
Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS =0V −104 −pF
Qg(tot) Total Gate Charge at 10 V VDS = 400 V, ID= 22 A, VGS =10V
(Note 4)
−78 −nC
Qgs Gate to Source Gate Charge −18 −nC
Qgd Gate to Drain “Miller” Charge −30 −nC
ESR Equivalent Series Resistance f = 1 MHz −0.6 −W
SWITCHING CHARACTERISTICS
td(on) Turn-On Delay Time VDD = 400 V, ID= 22 A, VGS =10V,
Rg= 4.7 W
(Note 4)
−26 −ns
trTurn-On Rise Time −52 −ns
td(off) Turn-Off Delay Time −89 −ns
tfTurn-Off Fall Time −16 −ns
SOURCE-DRAIN DIODE CHARACTERISTICS
ISMaximum Continuous Source to Drain Diode Forward Current − − 44 A
ISM Maximum Pulsed Source to Drain Diode Forward Current − − 110 A
VSD Source to Drain Diode Forward Voltage VGS = 0V, I
SD = 22A − − 1.2 V
trr Reverse Recovery Time VGS = 0V, I
SD = 22A,
dIF/dt = 100 A/ms
−435 −ns
Qrr Reverse Recovery Charge −9.2 −mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Essentially independent of operating temperature typical characteristics.
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TYPICAL PERFORMANCE CHARACTERISTICS
ID = 22 A
VDS = 130 V
VDS = 400 V
TC = 25°C
VGS = 10 V
VGS = 20 V
VDS = 20 V
250 ms Pulse Test
25°C
−55°C
150°C
250 ms Pulse Test
TC = 25°C
VGS = 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
0
0.00
0.05
0.10
0.15
0.0 0.3 1.2 1.5
0.1
1
10
100
0
0
2
4
6
8
10
ID, Drain Current (A)
RDS(ON), Drain−Source
On−Resistance (W)
60 120
VSD, Body Diode Forward Voltage (V)
IS, Reverse Drain Current (A)
VDS, Drain−Source Voltage (V)
Capacitances (pF)
Qg, Total Gate Charge (nC)
VGS, Gate−Source Voltage (V)
20 100
0.20
0.25
0.3 1 10
1
10
100
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
20
VDS, Drain−Source Voltage (V)
ID, Drain Current (A)
46
1
10
100
7
VGS, Gate−Source Voltage (V)
ID, Drain Current (A)
35
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
2
9030
VGS = 0 V
250 ms Pulse Test
25°C150°C
−55°C
200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
VGS = 0 V
f = 1 MHz
Ciss
Crss
0.1
1
10
100
1000
10000
100000
0.1 1 10 100 1000 40 60 80
0.6 0.9
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TC = 25°C
TJ = 150°C
Single Pulse
Operation in this Area
is Limited by RDS(on)
DC
100 ms
1 ms
10 ms
10 ms
1 10 100 1000
0.01
0.1
10
100
200
25
0
10
20
30
50
4
0
12
16
20
VDS, Drain−Source Voltage (V)
ID, Drain Current (A)
TC, Case Temperature (5C)
ID, Drain Current (A)
50 75 100 125 150
VDS, Drain to Source Voltage (V)
EOSS, (mJ)
100 200 300 500 650
1
0
−50
0.8
0.9
1.0
1.1
1.2
0.0
0.5
1.0
1.5
2.0
2.5
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On−Resistance Variation
vs. Temperature
TJ, Junction Temperature (5C)
BVDSS, Drain−Source
Breakdown Voltage (Normalized)
050 100 150
TJ, Junction Temperature (5C)
RDS(on), Drain−Source
On−Resistance (Normalized)
−50 0 50 100 150
VGS = 0 V
ID = 1 mA
VGS = 10 V
ID = 22 A
3.0
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
Figure 11. EOSS vs. Drain to Source Voltage
40
600400
8
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TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Figure 12. Transient Thermal Response Curve
t, Rectangular Pulse Duration (sec)
r(t), Normalized Effective Transient
Thermal Resistance
10−510−410−310−210−1100101102
1E−4
1E−3
0.01
0.1
1
2
ZqJC(t) = r(t) x RqJC
RqJC = 2.7°C/W
Peak TJ = PDM x ZqJC(t) + TC
Duty Cycle, D = t1 / t2
D = 0.5
0.2
0.1
0.05
0.02
0.01
DUTY CYCLE − DESCENDING ORDER
SINGLE PULSE
PDM
t1
t2
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Figure 13. Gate Charge Test Circuit & Waveform
Figure 14. Resistive Switching Test Circuit & Waveforms
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
RL
VDS
VGS
VGS
RG
DUT
VDD
VDS
VGS
10%
90%
10%
90% 90%
ton toff
trtf
td(on) td(off)
Qg
Qgd
Qgs
VGS
Charge
VDS
VGS
RL
DUT
IG = Const.
VDD
VDS
RG
DUT
VGS
L
ID
tp
VDD
tp
Time
IAS
BVDSS
ID(t)
VDS(t)
EAS +1
2
@LIAS
2
FCPF067N65S3
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Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
L
VDD
RG
ISD
VDS
+
−
VGS
Same Type
as DUT
− dv/dt controlled by RG
− ISD controlled by pulse period
Driver
VGS
(Driver)
ISD
(DUT)
VDS
(DUT) VSD
IRM
10 V
di/dt
VDD
IFM, Body Diode Forward Current
Body Diode Reverse Current
Body Diode Recovery dv/dt
Body Diode
Forward Voltage Drop
D+
Gate Pulse Width
Gate Pulse Period
SUPERFET is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or
other countries.
TO−220 Fullpack, 3−Lead / TO−220F−3SG
CASE 221AT
ISSUE A
DATE 12 NOV 2013
Scale 1:1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
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disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
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Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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TO−220 FULLPACK, 3−LEAD / TO−220F−3SG
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