MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor ... designed for 12.5 Volt VHF large-signal power amplifier applications required in commercial and industrial equipment operating to VHF frequencies. Specified 12.5 Volt, 175 MHz Characteristics Output Power = 40 W Power Gain = 4.5 dB Min Efficiency = 70% Min MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VcEO 18 Vde Collector-Base Voltage VCBO 36 Vde Emitter-Base Voltage VEBO 4.0 Vde Collector Current Continuous le 70 Adc Total Device Dissipation @ To = 25C (2) Pp 80 Watts Derate above 25C 0.46 wre Storage Temperature Range Tstg 65 to +200 C Stud Torque (1) _ 6.5 in. Ib. ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted.) MRF224 40 W, 175 MHz RF POWER TRANSISTOR NPN SILICON CASE 211-07, STYLE 1 [ Characteristic . | Symbol! Min Typ Max Unit | OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage (Ic = 100 mAdc, Ip = 0) V(BR)CEO 18 _ _ Vde CollectorEmitter Breakdown Voltage (Ic = 20 mAdc, VBE = 0) V(BR)CES 36 _ _ Vde Emitter-Base Breakdown Voitage (IE = 10 mAdc, I = 0) V(BR)EBO 4.0 _ _ Vde Collector Cutoff Current (Vog = 15 Vde, Vag = 0, To = +55C) IcES _ _ 10 mAde Collector Cutoff Current (Vcp = 15 Vde, IE = 0) IcBo _ _ 2.5 mAdc ON CHARACTERISTICS DC Current Gain hee 5.0 _ _ _ (Ic = 1.0 Ade, Vce = 5.0 Vde) DYNAMIC CHARACTERISTICS Output Capacitance Cob _ 170 200 pF (VcB = 15 Vde, IE = 0, f= 0.1 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain GpE 45 _ _ dB (Pout = 40 W, Vcc = 12.5 Vde, f = 175 MHz) Collector Efficiency q 70 _ _ % (Pout = 40 W, Voc = 12.5 Vde, f = 175 MHz) NOTES: 1, For repeated assembly use 5 in. Ib. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF amplifiers. MRF224 2-436 MH 63967254 0106800 745 = MOTOROLA RF DEVICE DATA+12.5 Vde + | 100uF AR O41 pFAS 1000 my dire SHIELD La Che RF + L myn Ar-2-- output Ct lu RFS cy ner INPUT at ~~ DUT \ i Eo c2 RFC 100 pF AK 100 pF HH C3 C1, C2, C3, C4 5.0-80 pF ARCO 462 L1 Straight Wire, #14 AWG, 1-3/8 Long L2 1 Turn, #14 AWG, 3/8 ID, Length Plus Leads = 1 RFC VK200-20/4B, FERROXCUBE Figure 1.175 MHz Test Circuit 70 150 MHz 175 MHz a a 60 Pin = 14W E te {= 175 MHz = f = 200 MHz = 50 oc oe = = 40 oO Oo am o E = zx 30 5 5 oO Voc = 12.5 Vde o 20 oe o o o 0 2 4 6 8 10 12 #14 16 ~=~=18 nm 3S a a ~ 8 9 0 ot 12 613006(614 0 15 Pin, INPUT POWER (WATTS) Voc, SUPPLY VOLTAGE (VOLTS) Figure 2. Output Power versus Input Power Figure 3. Output Power versus Supply Voltage MOTOROLA FF DEVICE DATA MRF224 2-437 MB 6367254 0106801 47]WA VELENG THs Te 0.49 8) f= 130 MHz wows or | 180 KE Rene a = Ms qe f = 130 MHz Zo Anon Voc = 12.5 Vde mt Poyt=40W 3 Frequency Zin Zou z MHz Ohms Ohms in 9 130 1,00 +1.25 | 2.88 +0.00 z 140 1.00 +1.30 | 2.88 +0.00 8 150 1.00+1.38 | 2.88 +0.60 a 160 1.00+1.43 | 2.85 +1.20 com 170 1.00 41.53 | 2.85 +1.52 $ 180 4.00 +1.60 | 2.85 +1.70 Zo" = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 4, Series Equivalent Impedance MRF224 MOTOROLA RF DEVICE DATA 2-438 MB 6367254 010b80e 508