NTD20N03L27T4G - ON Semiconductor L.L.C.

October, 2011 − Rev. 5

1Publication Order Number:

NTD20N03L27/D

NTD20N03L27,

NVD20N03L27

Power MOSFET

20 Amps, 30 Volts, N−Channel DPAK

This logic level vertical power MOSFET is a general purpose part

that provides the “best of design” available today in a low cost power

package. Avalanche energy issues make this part an ideal design in.

The drain−to−source diode has a ideal fast but soft recovery.

Features

•Ultra−Low RDS(on), Single Base, Advanced Technology

•SPICE Parameters Available

•Diode is Characterized for use in Bridge Circuits

•IDSS and VDS(on) Specified at Elevated Temperatures

•High Avalanche Energy Specified

•ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

•AEC Q101 Qualified − NVD20N03L27

•These Devices are Pb−Free and are RoHS Compliant

Typical Applications

•Power Supplies

•Inductive Loads

•PWM Motor Controls

•Replaces MTD20N03L in many Applications

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit

Drain−to−Source Voltage VDSS 30 Vdc

Drain−to−Gate Voltage (RGS = 1.0 MW)VDGR 30 Vdc

Gate−to−Source Voltage

− Continuous

− Non−Repetitive (tpv10 ms)

VGS

"20

"24

Vdc

Drain Current

− Continuous @ TA = 25_C

− Continuous @ TA = 100_C

− Single Pulse (tpv10 ms)

IDM

Adc

Apk

Total Power Dissipation @ TA = 25_C

Derate above 25°C

Total Power Dissipation @ TC = 25°C (Note 1)

PD74

0.6

1.75

W/°CW

Operating and Storage Temperature Range TJ, T

stg −55 to

150

°C

Single Pulse Drain−to−Source Avalanche

Energy − Starting TJ = 25°C

(VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH,

IL(pk) = 24 A, VDS = 34 Vdc)

EAS 288 mJ

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

RqJC

RqJA

1.67

100

71.4

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using the minimum recommended

pad size and repetitive rating; pulse width limited by maximum junction

temperature.

20 A, 30 V, RDS(on) = 27 mW

N−Channel

Gate

Source

Drain

DPAK

CASE 369C

STYLE 2

20N3L = Device Code

Y = Year

WW = Work Week

G = Pb−Free Package

MARKING

DIAGRAMS

YWW

N3LG

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

ORDERING INFORMATION

http://onsemi.com

NTD20N03L27, NVD20N03L27

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage (Note 2)

(VGS = 0 Vdc, ID = 250 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C)

IDSS

−

100

mAdc

Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage (Note 2)

(VDS = VGS, ID = 250 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.6

5.0

2.0

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance (Note 2)

(VGS = 4.0 Vdc, ID = 10 Adc)

(VGS = 5.0 Vdc, ID = 10 Adc)

RDS(on)

−

Static Drain−to−Source On−Voltage (Note 2)

(VGS = 5.0 Vdc, ID = 20 Adc)

(VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C)

VDS(on)

−

0.48

0.40

0.54

−

Vdc

Forward Transconductance (Note 2) (VDS = 5.0 Vdc, ID = 10 Adc) gFS −21 −mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss −1005 1260 pF

Output Capacitance Coss −271 420

Transfer Capacitance Crss −87 112

SWITCHING CHARACTERISTICS (Note 3)

Turn−On Delay Time

(VDD = 20 Vdc, ID = 20 Adc,

VGS = 5.0 Vdc,

RG = 9.1 W) (Note 2)

td(on) −17 25 ns

Rise Time tr−137 160

Turn−Off Delay Time td(off) −38 45

Fall Time tf−31 40

Gate Charge

(VDS = 48 Vdc, ID = 15 Adc,

VGS = 10 Vdc) (Note 2)

QT−13.8 18.9 nC

Q1−2.8 −

Q2−6.6 −

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 20 Adc, VGS = 0 Vdc) (Note 2)

(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

−

1.0

0.9

1.15

−

Vdc

Reverse Recovery Time

(IS =15 Adc, VGS = 0 Vdc,

dlS/dt = 100 A/ms) (Note 2)

trr −23 −ns

ta−13 −

tb−10 −

Reverse Recovery Stored Charge QRR −0.017 −mC

2. Pulse Test: Pulse Width ≤300 ms, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

ORDERING INFORMATION

Device Package Shipping†

NTD20N03L27T4G DPAK

(Pb−Free)

2500 / Tape & Reel

NVD20N03L27T4G DPAK

(Pb−Free)

2500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

NTD20N03L27, NVD20N03L27

http://onsemi.com

1.6

1.4

1.2

0.8

0.6

100

1000

0.015

0.40.2

−ID, DRAIN CURRENT (AMPS)

−VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

0.04

0.035

0.03

0.025

221512

0.02

0.015

0.01

0.005

5252832

Figure 3. On−Resistance vs. Drain Current and

Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance vs. Drain Current and

Gate Voltage

ID, DRAIN CURRENT (AMPS)

Figure 5. On−Resistance Variation with

Temperature

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Drain−to−Source Leakage Current

vs. Voltage

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)

−IDSS, LEAKAGE (nA)

−50 75500−25 100 150

0.5 1.5 5

028322420 3616 40

0.02

0.01

0.025

0.03

012159618330

−VDS, DRAIN−TO−SOURCE VOLTAGE (V)

1.4 2

0.6 0.8 1.2 1.6 1.8 1 2 2.5 3 3.5 4 4.5

818 3538

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

4812

12525 21 24 27

VGS = 10 V

VGS = 8 V

VGS = 6 V

VGS = 5 V

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

VGS = 3 V

VGS = 2.5 V

TJ = 25°C

TJ = 100°C

TJ = −55°C

VDS > = 10 V

VGS = 5 V

TJ = 25°C

TJ = 100°C

TJ = −55°C

VGS = 5 V

VGS = 10 V

TJ = 25°C

ID = 10 A

VGS = 5 V

TJ = 100°C

TJ = 125°C

VGS = 0 V

TJ = 25°C

NTD20N03L27, NVD20N03L27

http://onsemi.com

350

300

200

250

150

100

1500

824

C, CAPACITANCE (pF)

Qg, TOTAL GATE CHARGE (nC)

Figure 7. Capacitance Variation Figure 8. Gate−to−Source and

Drain−to−Source Voltage vs. Total Charge

VGS, GATE−TO−SOURCE VOLTAGE (V)

1000

100

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

RG, GATE RESISTANCE (W)

Figure 10. Diode Forward Voltage vs. Current

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

IS, SOURCE CURRENT (AMPS)

t, TIME (ns)

Figure 11. Maximum Avalanche Energy vs.

Starting Junction Temperature

TJ, STARTING JUNCTION TEMPERATURE (°C)

EAS, SINGLE PULSE DRAIN−TO−SOURCE

AVALANCHE ENERGY (mJ)

2500

25 1251007550 150

06 14

0.0 0.4 0.50.30.2 0.60.1 1.0

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)

500

1000

200

14 258 6 2 0 6 1012 16182023 2 4 8 10 12

0.7 0.8 0.9

VGS − VDS

Ciss

Coss

Crss

Q1Q2

ID = 20 A

TJ = 25°C

VGS

VDS = 20 V

ID = 20 A

VGS = 5.0 V

TJ = 25°C

td(off)

td(on)

VGS = 0 V

TJ = 25°C

ID = 24 A

NTD20N03L27, NVD20N03L27

http://onsemi.com

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C−01

ISSUE D

STYLE 2:

PIN 1. GATE

2. DRAIN

3. SOURCE

4. DRAIN

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent

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PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

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Phone: 81−3−5773−3850

NTD20N03L27/D

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