NTD20N03L27, NVD20N03L27 Power MOSFET 20 Amps, 30 Volts, N-Channel DPAK This logic level vertical power MOSFET is a general purpose part that provides the "best of design" available today in a low cost power package. Avalanche energy issues make this part an ideal design in. The drain-to-source diode has a ideal fast but soft recovery. http://onsemi.com 20 A, 30 V, RDS(on) = 27 mW Features * * * * * * * * Ultra-Low RDS(on), Single Base, Advanced Technology SPICE Parameters Available Diode is Characterized for use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperatures High Avalanche Energy Specified ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0 AEC Q101 Qualified - NVD20N03L27 These Devices are Pb-Free and are RoHS Compliant * * * * Power Supplies Inductive Loads PWM Motor Controls Replaces MTD20N03L in many Applications N-Channel D G S Typical Applications MARKING DIAGRAMS MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage VDSS 30 Vdc Drain-to-Gate Voltage (RGS = 1.0 MW) VDGR 30 Vdc Gate-to-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25_C - Continuous @ TA = 100_C - Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25_C Derate above 25C Total Power Dissipation @ TC = 25C (Note 1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH, IL(pk) = 24 A, VDS = 34 Vdc) Thermal Resistance - Junction-to-Case - Junction-to-Ambient - Junction-to-Ambient (Note 1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds 1 2 DPAK CASE 369C STYLE 2 3 2 1 3 Drain Gate Source Vdc VGS VGS "20 "24 ID ID 20 16 60 Adc PD 74 0.6 1.75 W W/CW TJ, Tstg -55 to 150 C EAS 288 mJ RqJC RqJA RqJA 1.67 100 71.4 TL 260 IDM 4 Apk YWW 20 N3LG 4 Drain 20N3L Y WW G = Device Code = Year = Work Week = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. C/W C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using the minimum recommended pad size and repetitive rating; pulse width limited by maximum junction temperature. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 5 1 Publication Order Number: NTD20N03L27/D NTD20N03L27, NVD20N03L27 ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Characteristic Symbol Drain-to-Source Breakdown Voltage (Note 2) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Min Typ Max Unit 30 - - 43 - - - - - - 10 100 - - 100 1.0 - 1.6 5.0 2.0 - - - 28 23 31 27 - - 0.48 0.40 0.54 - gFS - 21 - mhos pF OFF CHARACTERISTICS Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) (VDS = 30 Vdc, VGS = 0 Vdc, TJ =150C) IDSS Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/C mAdc nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (Note 2) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain-to-Source On-Resistance (Note 2) (VGS = 4.0 Vdc, ID = 10 Adc) (VGS = 5.0 Vdc, ID = 10 Adc) RDS(on) Static Drain-to-Source On-Voltage (Note 2) (VGS = 5.0 Vdc, ID = 20 Adc) (VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150C) VDS(on) Forward Transconductance (Note 2) (VDS = 5.0 Vdc, ID = 10 Adc) Vdc mV/C mW Vdc DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Transfer Capacitance Ciss - 1005 1260 Coss - 271 420 Crss - 87 112 td(on) - 17 25 tr - 137 160 td(off) - 38 45 tf - 31 40 QT - 13.8 18.9 Q1 - 2.8 - Q2 - 6.6 - - - 1.0 0.9 1.15 - trr - 23 - ta - 13 - tb - 10 - QRR - 0.017 - SWITCHING CHARACTERISTICS (Note 3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDD = 20 Vdc, ID = 20 Adc, VGS = 5.0 Vdc, RG = 9.1 W) (Note 2) (VDS = 48 Vdc, ID = 15 Adc, VGS = 10 Vdc) (Note 2) ns nC SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2) (IS = 20 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time (IS =15 Adc, VGS = 0 Vdc, dlS/dt = 100 A/ms) (Note 2) Reverse Recovery Stored Charge VSD Vdc ns mC 2. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Package Shipping NTD20N03L27T4G DPAK (Pb-Free) 2500 / Tape & Reel NVD20N03L27T4G DPAK (Pb-Free) 2500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 NTD20N03L27, NVD20N03L27 VGS = 8 V 30 VGS = 4.5 V VGS = 5 V 25 20 VGS = 3.5 V VGS = 6 V 15 VGS = 3 V 10 TJ = 25C 5 0 0.2 0.04 0.4 0.6 0.8 1 VGS = 2.5 V 1.2 1.4 1.6 1.8 TJ = 100C 20 16 TJ = 25C TJ = -55C 12 8 4 1 1.5 2 2.5 3 3.5 4 4.5 Figure 2. Transfer Characteristics TJ = 100C 0.03 TJ = -55C 0.015 0.01 5 TJ = 25C VGS = 5 V 0.025 TJ = 25C 0.02 0.02 VGS = 10 V 0.015 0.005 1.4 24 Figure 1. On-Region Characteristics 0.025 1.6 28 -VGS, GATE-TO-SOURCE VOLTAGE (V) 0.03 0 32 -VDS, DRAIN-TO-SOURCE VOLTAGE (V) VGS = 5 V 0.035 VDS > = 10 V 36 0 0.5 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) VGS = 4 V ID, DRAIN CURRENT (AMPS) 35 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 40 VGS = 10 V 2 5 8 12 15 18 22 25 28 32 35 38 4 0 8 12 16 20 24 28 32 36 40 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Drain Current and Temperature Figure 4. On-Resistance vs. Drain Current and Gate Voltage 1000 ID = 10 A VGS = 5 V 1.2 1 0.8 0.6 -50 0.01 -IDSS, LEAKAGE (nA) -ID, DRAIN CURRENT (AMPS) 40 -25 0 25 50 75 100 125 TJ = 125C 100 TJ = 100C 10 1 150 VGS = 0 V 0 3 6 9 12 15 18 21 24 27 TJ, JUNCTION TEMPERATURE (C) -VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 30 C, CAPACITANCE (pF) 2500 VGS, GATE-TO-SOURCE VOLTAGE (V) NTD20N03L27, NVD20N03L27 VGS - VDS 200 1500 Ciss 1000 500 Coss Crss 0 10 8 6 4 2 0 2 4 6 8 10 12 14 16 18 20 23 25 Q 10 8 VGS 6 Q1 4 Q2 2 0 ID = 20 A TJ = 25C 0 2 4 6 8 10 12 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge 1000 IS, SOURCE CURRENT (AMPS) 20 tr 100 tf td(off) 10 1 td(on) 1 VDS = 20 V ID = 20 A VGS = 5.0 V TJ = 25C 10 16 14 12 10 8 6 4 2 0 0.0 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 350 ID = 24 A 300 250 200 150 100 50 0 25 50 75 100 125 TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 14 VGS = 0 V TJ = 25C 18 RG, GATE RESISTANCE (W) EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) t, TIME (ns) 12 150 1.0 NTD20N03L27, NVD20N03L27 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C-01 ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 http://onsemi.com 5 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD20N03L27/D