SENTECH CORP 58E D MM 8139139 0002593 2TT MMSET 1N5415 thru 1N5420 3SFO5 thru 3SF6 FAST RECOVERY AXIALLEADED HERMETICALLY SEALED QUICK SUPERFAST RECTIFIER DIODE REFERENCE DATA e Very low reverse recovery time * VR = 50 - 600V * Hermetically sealed in Metoxilite fused metal oxide IF =4.5A y * Low switching losses * tr = 150 - 400nS * Low forward voltage drop IR = 1.0pA Soft, non-snap off, recovery characteristics ABSOLUTE MAXIMUM RATINGS (@ 25C unless otherwise specified) Symbol _|!N5415 1N5416 1N5417 1N5418 1N5419 1NS420}_ Unit 3SF05 3S5Fl1 3S5F2 3SF4 3SF5 35SF6 Working reverse voltage VrwM | 50 100 200 400 500 600 Vv Repetitive reverse voltage Vrrm | 50 100 200 400 500 600 Vv Average forward current IF(AV) 4.5 A (@ 55C in free air, lead length 0.375") Repetitive surge current IFRM 25 A (@ 55C in free air, lead length 0.375") Non-repetitive surge current (tp = 8.3mS, @ VR & Tjmax ) IFSM 80 A (tp = 8.3mS, @ Vr & 25C) IFsM 150 A Storage temperature range TSTG - -65 to +175 > C Operating temperature range Top -65 to +175 > C MECHANICAL These products are qualified to A " MIL-S-19500/411 and are preferred parts as listed in MIL-STD-701. | They can be supplied fully released as JAN, JANTX, and JANTXYV versions. B D These products are qualified in Europe 4 to DEF STAN 59-61 (PART 80)/030 L ) ce available to F and FX levels. oJ [ NOTES: 1. LEAD DIAMETER UNCONTROLLED - B OVER THIS REGION. | Weight = 0.040z DS-019 2-63 SEMTECH CORPORATIONSEMTECH CORP S8E D MM 6139139 0002594 136 MBSET 1N5415 thru 1N5420 3SF05 thru 3SF6 FAST RECOVERY ELECTRICAL CHARACTERISTICS @ 25C unless otherwise specified) Symbol |1N5415 1N5416 1N5417 1N5418 1N5419 1N5420| Ypit 3SF05 3SF1 3SF2 3SF4 3SF5 3SF6 Average forward current max. for sine wave; TA = 55C) IF(AV) 3.0 A Average forward current max. (TL = 55C; L = 3/8") for sine wave IF(AV) 4.4 A for square wave IF(AV) - 4.5 A 1t for fusing (t = 8.3mS) max. rt 90 > | As Forward voltage drop max. @ Ip = 3.0A, Tj = 25C VE 11 Vv Reverse current max. @ Vrww, Tj = 25C IR 1.0 pA @ Vrwwy, Tj = 100C IR 20 BA Reverse recovery time max. ter 150 150 150 150 250 400] nS 0.5A Ip to 1.0A Ip. Recovers to 0.25A Irr Junction capacitance typ. Cj 120 120 120 120 170 170} pF @ Vr =5V, f = 1MHz THERMAL CHARACTERISTICS Symbol _}!N5415 1N5416 1N5417 1N5418 1N5419 1N54201 Unit 3SF05 3SF1 3SF2 3SF4 3SF5 3SF6 Thermal resistance - junction to lead Lead length = 0.375" RejL < 20 C/W Lead length = 0.0" Ret 4 > |C/W Thermal resistance - junction to amb. on 0.06" thick pcb. 1 oz. copper. Roja 75 + 1C/W SEMTECH CORPORATION 2-64 DS-019SEMTECH CORP FAST RECOVERY 58E D M@ 8139139 0002595 Ore MBSET 1N5415 thru 1N5420 3SF05 thru 3SF6 15.0 12.0 Ik Typ @T, = 1 (Amps) 20 Max @T; = 690 30 0.0 Ve (Volts) Fig 1. Forward voltage drop as a function of forward current. 107 197 40 40 10" 10? t (Secs) Fig 3. Transient thermal impedance characteristic. DS-019 Pr (Watts) Tr CC) Fig 2. Maximum power versus lead temperature. Q42r 10 G (pF) 10 10' 10 10 10 10? 0 Vr (Volts) Fig 4. Typical junction capacitance as a function of reverse voliage. 2-65 SEMTECH CORPORATIONSEMTECH CORP 58E 1N5415 thru 1N5420 3SFO5 thru 3SF6 D MW 139139 0002596 TOD MESET FAST RECOVERY IRjav) (Amps) Fig 5. Forward power dissipation as a function of forward current, for sinusoidal operation. 107 10" 10 10 10? t (Secs) Fig 7. Typical repetitive forward current as a function of pulse width at 55C; Ret = 20 C/W; Vrwn during 1 - 5. SEMTECH CORPORATION 25 200 Pr (Watts) 18.0 B= 1 (DC) 05 0.2 0.1 100 | | Tit Sat > 50 Current Waveform IRay) (Amps) Fig 6. Forward power dissipation as a function of forward current, for square wave operation. 20.0 16.0 IFRM (Amps) 12.0 8.0 4.0 107 10 10 10 10? t (Secs) Fig 8. Typical repetitive forward current as a function of pulse width at 100C; Rat = 80 C/W; Vrwn during 1 - 6. 2-66 DS-019