RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 2.0 (1) 1.3 (2) 0.65 0.65 0.9 (3) 0.3 0.7 zExternal dimensions (Unit : mm) zFeatures 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. 1.25 0.1Min. zStructure Silicon N-channel MOSFET transistor 0~0.1 0.15 0.2 2.1 Each lead has same dimensions Abbreviated symbol : KP ROHM : UMT3 EIAJ : SC-70 JEDEC : SOT-323 (1) Source (2) Gate (3) Drain zEquivalent circuit (3) (2) Gate Protection Diode. (1) (1) Source (2) Gate (3) Drain A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. zAbsolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS 20 V Drain current Source current Continuous ID Pulsed IDP Continuous IS 200 mA Pulsed ISP 1 800 mA 1 2 200 mA 800 mA Total power dissipation PD 200 mW Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C 1 Pw10s, Duty cycle1% 2 Each terminal mounted on a recommended 1/4 RHU002N06 Transistors zElectrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit IGSS - - 10 A VGS=20V, VDS=0V V (BR) DSS 60 - - V ID=10A, VGS=0V IDSS - - 1 A VDS=60V, VGS=0V VGS (th) 1 - 2.5 V VDS=10V, ID=1mA - 1.7 2.4 - 2.8 4.0 Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Drain-source on-state resistance RDS (on)1 Test Conditions ID=200mA, VGS=10V ID=200mA, VGS=4V Yfs l1 100 - - mS VDS=10V, ID=200mA Input capacitance Ciss - 15 - pF Output capacitance Coss - 8 - pF Reverse transfer capacitance Crss - 4 - pF VDS=10V VGS=0V f=1MHz td (on)2 - 6 - ns tr2 - 5 - ns td (off)2 - 12 - ns t f 2 - 95 - ns l Forward transfer admittance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Qg2 - 2.2 4.4 nC Gate-source charge Qgs2 - 0.6 - nC Gate-drain charge Qgd2 - 0.3 - nC ID=100mA, VDD 30V VGS=10V RL=300 RGS=10 VDD 30V VGS=10V ID=200mA 1 PW300s, Duty cycle1% 2 Pulsed zPackaging specifications Taping Package Type Code T106 Basic ordering unit (pieces) 3000 RHU002N06 1 0.8 10V 0.7 DRAIN CURRENT : ID (A) 8V 6V 0.6 0.5 4V 0.4 0.3 3.5V 0.2 VGS=3V DRAIN CURRENT : ID (A) Ta=25C Pulsed VDS=10V Pulsed 0.1 Ta=-25C 25C 75C 125C 0.01 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Output Characteristics 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.2 Typical Transfer Characteristics GATE THRESHOLD VOLTAGE : VGS (th) (V) zElectrical characteristic curves 2.5 VDS=10V ID=1mA Pulsed 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (C) Fig.3 Gate Threshold Voltage vs. Channel Temperature 2/4 RHU002N06 Transistors 10 Ta=125C 75C 25C -25C 0.1 Ta=125C 75C 25C -25C 1.0 0.01 1.0 0.1 DRAIN CURRENT : I D (A) 1 REVERSE DRAIN CURRENT : IDR (A) 2.5 ID=200mA 2.0 100mA 25 50 75 0.1 Ta=125C 75C 25C -25C 0.01 0.001 0.0 100 125 150 0.2 0.4 0.6 0.8 5 10 15 VGS=10V 0V 0.1 0.01 0.2 0.4 0.6 0.8 75C 125C 0.01 1 Fig.9 Reverse Drain Current vs. Source-Drain Voltage ( ) 1000 DRAIN CURRENT : ID (A) Fig.10 Forward Transfer Admittance vs. Drain Current Ciss 10 Coss Crss 1 0.01 1.2 1.0 SOURCE-DRAIN VOLTAGE : VSD (V) Ta=25C f=1MHz VGS=0V Ta=-25C 25C 20 Ta=25C Pulsed 0.001 0.0 1.2 1.0 100 0.1 0 1 Fig.8 Reverse Drain Current vs. Source-Drain Voltage ( ) VGS=10V Pulsed CAPACITANCE : C (pF) FORWARD TRANSFER ADMITTANCE : I Yfs I (S) 1 0.01 100mA 1 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 0.001 0.001 2 10 VGS=0V Pulsed CHANNEL TEMPERATURE : Tch (C) 0.1 ID=200mA 3 GATE-SOURCE VOLTAGE : VGS (V) 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage SWITCHING TIME : t (ns) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () VGS=10V Pulsed 0 4 Fig.5 Static Drain-Source On-State Fig.6 Static Drain-Source On-State Resistance vs. Drain Current ( ) Resistance vs. Gate-Source Voltage 3.0 1.0 -50 -25 5 DRAIN CURRENT : I D (A) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( ) 1.5 Ta=25C Pulsed 6 0 1.0 REVERSE DRAIN CURRENT : IDR (A) 1.0 0.01 7 VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () VGS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () 10 tf 100 Ta=25C VDD=30V VGS=10V RG=10 Pulsed td(off) 10 td(on) tr 1 1 10 100 1000 DRAIN CURRENT : ID (mA) Fig.12 Switching Characteristics 3/4 RHU002N06 Transistors zSwitching characteristics measurement circuit Pulse width VGS RG ID D.U.T. VDS VGS 90% 50% 10% RL 50% 10% VDS 10% VDD 90% 90% td (on) ton Fig.13 Switching time test circuit tr td (off) tf toff Fig.14 Switching time waveforms 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0