RHU002N06
Transistors
1/4
Switching (60V, 200mA)
RHU002N06
zFeatures
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-volt age drive (4V).
5) Easily designed drive circuits.
6) Easy to use in pa rallel.
zStructure
Silicon N-channel
MOSFET transistor
zEquivalent circuit
(1)
Source
(2)
Gate
(3)
Drain
(1)
(3)
(2)
∗
Gate Protection Diode.
∗
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
zExternal dimensions (Unit : mm)
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
Abbreviated symbol : KP
1.25
2.1
0.3
0.15
0~0.1
0.1Min.
(3)
0.9
0.7 0.2
0.65
(2)
2.0
1.3
(1)
0.65
Each lead has same dimensions
(1) Source
(2) Gate
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
V
DSS
V
GSS
I
S
P
D
Tch
60 V
V
mA
mA
mW
˚C
±20
200I
D
I
SP
mA
I
DP
mA800
200
800
200
150
Tstg ˚C
−55 to +150
Symbol Limits Unit
Parameter
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended
Drain-source voltage
Gate-source voltage
Drain current
Source current
Total power dissipation
Channel temperature
Storage temperature
Continuous
Pulsed
Continuous
Pulsed
∗1
∗1
∗2
RHU002N06
Transistors
2/4
zElectrical characteristics (Ta=25°C)
Parameter Test Conditions
V
GS
=0V
f=1MHz
V
DS
=10V
V
GS
=10V
I
D
=100mA, V
DD
30V
R
L
=300Ω
R
GS
=10Ω
µA
pF
Ω
mS
Unit
V
µA
V
pF
pF
ns
ns
ns
ns
nC
nC
I
D
=200mA, V
GS
=10V
−
−
60
−
1
−
100
Min.
−
−
−
−
−
−
−
−
15
−
−
−
−
1.7
−
Typ.
8
4
6
5
12
95
0.3
0.6
−
±10
−
1
2.5
2.4
I
D
=200mA, V
GS
=4V
−2.8 4.0
−
Max.
−
−
−
−
−
−
−
V
DS
=10V, I
D
=200mA
I
D
=10µA, V
GS
=0V
V
GS
=±20V, V
DS
=0V
V
DS
=60V, V
GS
=0V
V
DS
=10V, I
D
=1mA
nC
I
D
=200mA
V
GS
=10V
−2.2 4.4
−
∗2 Pulsed
∗1 PW≤300µs, Duty cycle≤1%
I
GSS
I
DSS
l Y
fs
l
∗1
C
iss
Symbol
C
oss
C
rss
t
r
∗2
t
f
∗2
Q
gd
∗2
Q
gs
∗2
Q
g
∗2
V
(BR) DSS
V
GS (th)
R
DS (on)
∗1
t
d (on)
∗2
t
d (off)
∗2
V
DD
30V
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
zPackaging specifications
RHU002N06
Type
T106
3000
Package
Code
Basic ordering unit (pieces)
Taping
zElectrical characteristic curves
0.8
0.4
0.3
0.5
0.6
0.7
0.1
0.2
0.0
Fig.1 Typical Output Characteristics
DRAIN CURRENT : I
D (A)
0.0 0.5 1.0 1.5 2.0 2.5 4.03.0 3.5
DRAIN-SOURCE VOLTAGE : V
DS (V)
V
GS
=3V
10V
3.5V
8V 6V
4V
Ta=25°C
Pulsed
0.01
0.1
1
1.00.50.0 1.5 2.0 2.5 3.0 3.5 4.54.0
Pulsed
V
DS
=
10V
Ta=−25˚C
25˚C
75˚C
125˚C
0.001
GATE-SOURCE VOLTAGE : V
GS
(V)
Fig.2 Typical Transfer Characteristics
DRAIN CURRENT : I
D
(A)
Pulsed
V
DS
=10V
I
D
=1mA
2.5
150−50 −25 0
1.0
1.5
2.0
0.5
0.0 50 75 100 12525
CHANNEL TEMPERATURE : Tch
(°C)
GATE THRESHOLD VOLTAGE : V
GS (th)
(V)
Fig.3 Gate Threshold Voltage
vs. Channel Temperature
RHU002N06
Transistors
3/4
Pulsed
V
GS
=
10V
10
1.00.01
1.0 0.1
Ta=125°C
75°C
−25°C
25°C
DRAIN CURRENT : I
D (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current ( Ι )
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
Pulsed
V
GS
=
4V
10
1.00.01
1.0 0.1
Ta=125°C
75°C
−25°C
25°C
DRAIN CURRENT : I
D (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current ( ΙΙ )
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
Fig.6 Static Drain-Source On-State
Resistance vs. Gate-Source Voltage
7
5
6
3
2
1
4
0
0 5 10 15 20
GATE-SOURCE VOLTAGE : V
GS
(V)
ON-STATE RESISTANCE : R
DS (on)
(Ω)
STATIC DRAIN-SOURCE
Ta=25°C
Pulsed
I
D
=200mA
100mA
1.0
1.5
2.0
2.5
3.0
0
−25 50 75 100 125 150
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : R
DS (on)
(Ω)
CHANNEL TEMPERATURE : Tch
(°C)
Fig.7 Static Drain-Source On-State
Resistance vs. Channel Temperature
−50 25
I
D
=200mA
100mA
V
GS
=10V
Pulsed
0.01
0.1
1
0.40.20.0 0.6 0.8 1.0 1.2
Pulsed
VGS=0V
Ta=125°C
75°C
25°C
−25°C
0.001
SOURCE-DRAIN VOLTAGE : VSD
(V)
Fig.8 Reverse Drain Current vs.
Source-Drain Voltage ( Ι )
REVERSE DRAIN CURRENT : IDR
(A)
0.01
0.1
10
1
0.40.20.0 0.6 0.8 1.0 1.2
Pulsed
Ta=25°C
VGS=10V
0V
0.001
SOURCE-DRAIN VOLTAGE : VSD
(V)
Fig.9 Reverse Drain Current vs.
Source-Drain Voltage ( ΙΙ )
REVERSE DRAIN CURRENT : IDR
(A)
1
0.1
0.01
0.001
0.001 0.01 0.1 1
V
GS
=10V
Pulsed
Fig.10 Forward Transfer Admittance
vs. Drain Current
FORWARD TRANSFER ADMITTANCE : I Yfs I
(S)
DRAIN CURRENT : I
D
(A)
Ta=−25°C
25°C75°C
125°C
100
10
1
0.01 0.1 1 10 100
Ta=25°C
f=1MHz
VGS
=0V
Fig.11 Typical Capacitance
vs. Drain-Source Voltage
CAPACITANCE : C
(pF)
DRAIN-SOURCE VOLTAGE : VDS
(V)
Ciss
Coss
Crss
1000
10
100
11 10 100 1000
Ta=25°C
V
DD
=30V
V
GS
=10V
R
G
=10Ω
Pulsed
Fig.12 Switching Characteristics
SWITCHING TIME : t
(ns)
DRAIN CURRENT : I
D
(mA)
tr
tf
td(on)
td(off)
RHU002N06
Transistors
4/4
zSwitching characteristics measurement circuit
Fig.13 Switching time test circuit
VGS
RG
VDS
D.U.T.
ID
RL
VDD
90% 50%
10%
90%
10%
50%
Pulse width
10%
VGS
VDS
90%
tf
toff
td (off)
tr
ton
td (on)
Fig.14 Switching time waveforms
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
