N-Channel JFET Monolithie Dual SST440 /SST441 FEATURES @ High Gain ... 0... eee ee eee gfs > 6 mS typical @ Low Leakage ..........0.. ese ee eee @ Low Noise e Surface Mount Package APPLICATIONS Differential Wideband Amplifiers e VHF/UHF Amplifiers Test and Measurement Iq < 1pA typical CORPORATION DESCRIPTION Calogics SST440 Series is a high speed N-Channel Monolithic Dual JFET in a surface mount SO-8 package. This device is well suited for use as wideband differential amplifiers in test and measurement applications. The combination of high gain, low leakage and low noise make it an excellent performer. ORDERING INFORMATION Part Package Temperature Range $ST440-1 Plastic SO-8 ~58C to +150C NOTE: For Sorted Chips in Carriers, See U440 Series PIN CONFIGURATION CJ1 TOP VIEW (1) si {| YT Nc (a) (2) 01] | G2 7) (3) a1] TT] p2 (6) (4) oT] LT] s2 5) PRODUCT MARKING SST440 SST440 SST441 SST441 8-58ABSOLUTE MAXIMUM RATINGS (Ta = 25C unless otherwise noted) SST440/SST441 Parameter/Test Condition Symbol Limit Unit Gate-Drain Voltage Vep -25 Vv Gate-Source Voltage Ves -25 v Forward Gate Current 50 mA Power Dissipation (per side) Pp 300 mw (total) 500 mW Power Derating (per side) 2.4 mW/C (total) 4 mW? C Operating Junction Temperature -55 to 150 C Storage Temperature Tsig -55 to 150 C Lead Temperature (1/16" from case for 10 seconds) 300 c ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) 1 $ST440 SsT441 SYMBOL CHARACTERISTCS TYP UNIT TEST CONDITIONS MIN | MAX | MIN | Max STATIC ViaryGss Gate-Source Breakdown Voltage -35 | -25 -25 y Ig =-1pA, Vos = OV Vas(ore) Gate-Source Cut off Voltage -3.5 -1 6 -1 6 Vos = 10V, Ip = 1nd loss Saturation Drain Current 2 is | 6 30 | 6 | 30 mA | Vos = 10V, Ves = OV -1 -500 -500 pA Vas = -15V, Vos = OV lass Gate Reverse Current 0.2 nA | Ta=125C | . -1 -500 -500 pA Voe = 10V, Ip = 5mA Ia Gate Operating Current 0.2 nA | Ta=t25C | Vas) Gate-Source Forward Voltage 0.7 v Iq = 1mA, Vos = OV DYNAMIC Ofs Common-Source Forward Transconductance 6 4.5 9 4.5 9 ms Voa = 10V, Ip = 5mA Gos Common-Source Output Conductance 20 200 200 ns f= kHz Os Common-Source Forward Transconductance 5.5 mS Vo = 10V, Ip = 5mA Gos Common-Source Output Conductance 30 us t= 100MHz Cis Common-Source Input Capacitance 3.5 oF Vog = 10V, Ip =5mA Crss Common-Source Reverse Transfer Capacitance 1 f= IMHz @n Equivalent Input Noise Voltage 4 avi J Az ifs cee Ip =5mA MATCHING | Vasi-Vase| | Differential Gate-Source Voltage 7 10 20 mV Voa = 10V, Ip = 5mA A |_Vas1-Vase| | Gate-Source Voltage Differential Change with |_10 wes T =-55 to 25C | vog =10V, AT Temperature 10 Hu T =25 to 125C | lp = 5mA pest Saturation Drain Current Ratio 0.98 Vos = 10V, Vas = OV Gist Transconductance Ratio 0.98 Voa = 10, ip = SmA Qis2 f= 1 kHz CMRR Common Mode Rejection Ratio 90 dB Vop = 5 to 10V, Ip = SMA NOTES: 1. For design aid only, not subject to production testing. 2. Pulse test; PW = 300us, duty cycle < 3%. 8-59