S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9230(D, R, H) 2N7312D, 2N7312R 2N7312H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package * 4A, -200V, RDS(on) = 1.32 TO-257AA * Second Generation Rad Hard MOSFET Results From New Design Concepts * Gamma * Gamma Dot * Photo Current * Neutron * Single Event - Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 3.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2 Typically Survives 1E5ions/cm2 Having an LET 35MeV/mg/cm2 and a Range 30m at 80% BVDSS Symbol Description The Harris Semiconductor Sector has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. Heavy ion survival from signal event drain burn-out exists for linear energy transfer (LET) of 35 at 80% of rated voltage. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S19500. Contact the Harris Semiconductor High-Reliability Marketing group for any desired deviations from the data sheet. Absolute Maximum Ratings (TC = +25oC) Unless Otherwise Specified Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS Drain-Gate Voltage (RGS = 20k) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100H, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper I.C. Handling Procedures. Copyright (c) Harris Corporation 1992 12-128 2N7312D, R, H -200 -200 UNITS V V 4 2 12 20 A A A V 50 20 0.40 12 4 12 -55 to +150 W W W/oC A A A oC 300 oC File Number 3246 Specifications 2N7312D, 2N7312R, 2N7312H - Registration Pending Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -200 - V Gate-Threshold Volts VGS(th) VDS = VGS, ID = 1mA -2.0 -4.0 V Gate-Body Leakage Forward IGSSF VGS = -20V - 100 nA Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA Zero-Gate Voltage Drain Current IDSS1 IDSS2 IDSS3 VDS = -200V, VGS = 0 VDS = -160V, VGS = 0 VDS = -160V, VGS = 0, TC = +125oC - 1 0.025 0.25 mA Time = 20s - 12 A Rated Avalanche Current IAR Drain-Source On-State Volts VDS(on) VGS = -10V, ID = 4A - -5.54 V Drain-Source On Resistance RDS(on) VGS = -10V, ID = 2A - 1.32 td(on) VDD = -100V, ID = 4A - 48 Pulse Width = 3s - 158 Period = 300s, Rg = 25 - 111 0 VGS 10 (See Test Circuit) - 52 Turn-On Delay Time Rise Time tr ns Turn-Off Delay Time td(off) Fall Time tf Gate-Charge Threshold QG(th) 1 4 Gate-Charge On State QG(on) 15 60 31 124 -3 -13 VDD = -100V, ID = 4A IGS1 = IGS2 0 VGS 20 nc Gate-Charge Total QGM Plateau Voltage VGP Gate-Charge Source QGS 4 16 Gate-Charge Drain QGD 5 22 Diode Forward Voltage VSD -0.6 -1.8 V Reverse Recovery Time TT - TBD ns - 2.5 - 60 V nc Junction-To-Case Rjc Junction-To-Ambient Rja ID = 4A, VGD = 0 I = 4A; di/dt = 100A/s oC/W Free Air Operation VDD E1 = 0.5 BVDSS VC = 0.75 BVDSS RL L V1 VDS E1 DUT VC Rg 0.06 IL FIGURE 1. SWITCHING TIME TESTING FIGURE 2. CLAMPED INDUCTIVE SWITCHING, ILM 12-129 Specifications 2N7312D, 2N7312R, 2N7312H - Registration Pending Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Source Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current Drain-Source On-State Volts Drain-Source On Resistance SYMBOL TYPE (Note 4, 6) BVDSS 2N7312D, R (Note 5, 6) BVDSS (Note 4, 6) (Note 3, 5, 6) TEST CONDITIONS MIN MAX UNITS VGS = 0, ID = 1mA -200 - V 2N7312H VGS = 0, ID = 1mA -190 - V VGS(th) 2N7312D, R VGS = VDS, ID = 1mA -2.0 -4.0 V VGS(th) 2N7312H VGS = VDS, ID = 1mA -2.0 -6.0 V (Note 4, 6) IGSSF 2N7312D, R VGS = -20V, VDS = 0 - 100 nA (Note 5, 6) IGSSF 2N7312H VGS = -20V, VDS = 0 - 200 nA (Note 2, 4, 6) IGSSR 2N7312D, R VGS = 20V, VDS = 0 - 100 nA (Note 2, 5, 6) IGSSR 2N7312H VGS = 20V, VDS = 0 - 200 nA (Note 4, 6) IDSS 2N7312D, R VGS = 0, VDS = -160V - 25 A (Note 5, 6) IDSS 2N7312H VGS = 0, VDS = -160V - 100 A (Note 1, 4, 6) VDS(on) 2N7312D, R VGS = -10V, ID = 4A - -5.54 V (Note 1, 5, 6) VDS(on) 2N7312H VGS = -16V, ID = 4A - -8.31 V (Note 1, 4, 6) RDS(on) 2N7312D, R VGS = -10V, ID = 2A - 1.32 (Note 1, 5, 6) RDS(on) 2N7312H VGS = -14V, ID = 2A - 1.98 NOTES: 1. Pulse test, 300s max 2. Absolute value 3. Gamma = 300KRAD(Si) 4. Gamma = 10KRAD(Si) for "D", 100KRAD(Si) for "R". Neutron = 1E13 5. Gamma = 1000KRAD(Si). Neutron = 1E13 6. Insitu Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 2/19/90 on TA 17732 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, HARRIS Application note AN-8831, Oct. 1988 12-130 2N7312D, 2N7312R, 2N7312H - Registration Pending Typical Performance Characteristics 12-131