DATA SH EET
Product specification 2002 Sep 27
DISCRETE SEMICONDUCTORS
BLL1214-35
L-band radar LDMOS driver
transistor
M3D381
2002 Sep 27 2
Philips Semiconductors Product specification
L-band radar LDMOS driver transistor BLL1214-35
FEATURES
•High power gain
•Easy power control
•Excellent ruggedness
•Source on mounting base eliminates DC isolators,
reducing common mode inductance.
APPLICATIONS
•L-band radar applications in the 1200 to 1400 MHz
frequency range.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistor encapsulated in a 2-lead flange package
(SOT467C) with a ceramic cap. The common source is
connected to the flange.
PINNING - SOT467C
PIN DESCRIPTION
1 drain
2 gate
3 source, connected to flange
1
3
2
Top view
MBK584
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at Th=25°C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
MODE OF OPERATION f
(MHz) VDS
(V) PL
(W) Gp
(dB) ηD
(%)
Pulsed class-AB;
t=1ms;δ=10% 1200 to 1400 36 35 >13 >43
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS drain-source voltage −75 V
VGS gate-source voltage −±15 V
Ptot total power dissipation under RF conditions; Th≤25 °C−110 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −200 °C
2002 Sep 27 3
Philips Semiconductors Product specification
L-band radar LDMOS driver transistor BLL1214-35
THERMAL CHARACTERISTICS
Note
1. Thermal resistance is determined under RF operating conditions; tp= 1 ms, δ=10%.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th=25°C; Zth mb-h = 0.65 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLL1214-35 is capable of withstanding a load mismatch corresponding to VSWR =5:1 through all phases under
the following conditions: VDS = 36 V; frequency from 1200 MHz to 1400 MHz at rated load power.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Zth j-h thermal impedance from junction to heatsink Th=25°C; note 1 1.1 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 0.7 mA 75 −−V
V
GSth gate-source threshold voltage VDS = 10 V; ID=70mA 4.5 −5.5 V
IDSS drain-source leakage current VGS = 0; VDS =36V −−10 µA
IDSX on-state drain current VGS =V
GSth +9V; V
DS =10V 10 −−A
I
GSS gate leakage current VGS =±20 V; VDS =0 −−125 nA
gfs forward transconductance VDS = 10 V; ID= 2.5 A −2−S
RDSon drain-source on-state resistance VGS = 10 V; ID= 2.5 A −300 −mΩ
MODE OF OPERATION f
(MHz) VDS
(V) IDQ
(mA) PL
(W) Gp
(dB) ηD
(%)
Pulsed class-AB;
t=1ms;δ=10% 1200 to 1400 36 50 35 >13 >43
Typical impedance
FREQUENCY
(GHZ) ZS
(Ω)ZL
(Ω)
1.20 6.48 −j 3.9 1.95 + j 3.27
1.25 3.88 −j 3.2 1.90 + j 2.57
1.30 3.28 −j 2.4 2.01 + j 2.27
1.35 2.55 −j 1.48 2.20 + j 2.26
1.40 1.69 −j 0.51 1.72 + j 2.35
2002 Sep 27 4
Philips Semiconductors Product specification
L-band radar LDMOS driver transistor BLL1214-35
handbook, halfpage
0
(1) (2) (3)
1
50
0
10
20
30
40
0.2 0.4 0.6 0.8 Pi (W)
PL
(W)
MLD923
Fig.2 Load power as a function of input power;
typical values.
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 1 ms; δ= 10%.
handbook, halfpage
0
(1)
(2)
(3)
50
20
15
16
17
18
19
10 20 30 40 PL (W)
Gp
(dB)
MLD924
Fig.3 Power gain as a function of load power;
typical values.
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 1 ms; δ= 10%.
handbook, halfpage
0
(3) (1)
(2)
10 5020 30 40
MLD925
PL (W)
η
(%)
60
0
20
40
Fig.4 Efficiency as a function of load power;
typical values.
(1) f = 1.2 GHz. (2) f = 1.3 GHz. (3) f = 1.4 GHz.
tp= 1 ms; δ= 10%.
handbook, halfpage
1.1 1.2 f (GHz)
Gp
(dB)
Gp
ηD
(%)
ηD
1.3 1.5
20
15
19
1.4
18
17
16
60
10
50
40
30
20
MLD926
Fig.5 Power gain and efficiency as functions of
frequency; typical values.
tp= 1 ms; δ= 10%.
2002 Sep 27 5
Philips Semiconductors Product specification
L-band radar LDMOS driver transistor BLL1214-35
handbook, full pagewidth
C1 C3
C4
C5 C7 C8
C9
C10 C14
C11 C13
MCE033
C12
C6
R1
Fig.6 Component layout.
Shaded areas indicate tuning stubs.
List of components (see Fig.6)
COMPONENT DESCRIPTION VALUE CATALOGUE NO.
C1, C12 capacitor 51 pF ATC100A
C3 capacitor 6.8 pF ATC100A
C4, C9 capacitor 47 pF ATC100A
C6, C7 capacitor 4.7 µF/50 V 475 50k 952
C5, C8 capacitor 2.3 nF ATC100B
C10 capacitor 2.7 pF ATC100A
C11 capacitor 1.0 pF ATC100A
C13, C14 capacitor 1.5 pF ATC100A
R1 chip resistor 82 Ω
2002 Sep 27 6
Philips Semiconductors Product specification
L-band radar LDMOS driver transistor BLL1214-35
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT467C 99-12-06
99-12-28
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads
0.15
0.10
5.59
5.33 9.25
9.04 1.65
1.40 18.54
17.02
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
3.43
3.18
4.67
3.94 2.21
1.96
D
D1
U1
1
3
2
A
U2E
E1
p
b
H
Q
F
c
UNIT Q
cD
9.27
9.02
D1
5.92
5.77
E
5.97
5.72
E1FH p q
mm
0.184
0.155
inch
b
14.27 20.45
20.19
U2
U1
5.97
5.72 0.25
w1
0.51
0.006
0.004
0.220
0.210 0.364
0.356 0.065
0.055 0.73
0.67 0.135
0.125 0.087
0.077
0.365
0.355 0.233
0.227 0.235
0.225 0.562 0.805
0.795 0.235
0.225 0.010 0.020
w2
A
M M
C
C
Aw1
w2
AB
M M M
q
B
SOT467C
2002 Sep 27 7
Philips Semiconductors Product specification
L-band radar LDMOS driver transistor BLL1214-35
DATA SHEET STATUS
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DATA SHEET STATUS(1) PRODUCT
STATUS(2) DEFINITIONS
Objective data Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Product data Production This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuch applicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse of anyoftheseproducts,conveysnolicence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
© Koninklijke Philips Electronics N.V. 2002 SCA74
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Philips Semiconductors – a world wide company
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
Printed in The Netherlands 613524/01/pp8 Date of release: 2002 Sep 27 Document order number: 9397 750 09541
