16TTS08STRR - International Rectifier

SURFACE MOUNTABLE

PHASE CONTROL SCR

Bulletin I2105

16TTS..S SERIES

VT< 1.4V @ 10A

ITSM = 200A

/ V

D= 1200V

Major Ratings and Characteristics

D2 PAK (SMD-220)

IT(AV) Sinusoidal 10 A

waveform

IRMS 16 A

VRRM/

VDRM 800 and 1200 V

ITSM 200 A

VT@ 10 A, TJ = 25°C 1.4 V

dv/dt 500 V/µs

di/dt 150 A/µs

TJ- 40 to 125 °C

Characteristics 16TTS..S Units

Output Current in Typical Applications

TA = 55°C, TJ = 125°C, footprint 300mm2

NEMA FR-4 or G10 glass fabric-based epoxy 2.5 3.5

with 4 oz (140µm) copper

Aluminum IMS, RthCA = 15°C/W 6.3 9.5 A

Aluminum IMS with heatsink, RthCA = 5°C/W 14.0 18.5

Applications Single-phase Bridge Three-phase Bridge Units

Description/Features

The 16TTS..S new series of silicon controlled

rectifiers are specifically designed for medium

power switching and phase control applications.

The glass passivation technology used has reli-

able operation up to 125° C junction temperature.

Typical applications are in input rectification (soft

start) and these products are designed to be used

with International Rectifier input diodes, switches

and output rectifiers which are available in identi-

cal package outlines.

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16TTS.. S Series

Part Number

VRRM, maximum VDRM , maximum IRRM/IDRM

peak reverse voltage peak direct voltage 125°C

VVmA

16TTS08S 800 800 5

16TTS12S 1200 1200

V oltage Ratings

IT(AV) Max. Average On-state Current 10 A 50% duty cycle @ TC = 98° C, sinusoidal wave form

IRMS Max. RMS On-state Current 16

ITSM Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated VRRM applied

Surge Current 200 10ms Sine pulse, no voltage reapplied

I2t Max. I2t for fusing 144 A2s 10ms Sine pulse, rated VRRM applied

200 10ms Sine pulse, no voltage reapplied

I2√t Max. I2√t for fusing 2000 A2√s t = 0.1 to 10ms, no voltage reapplied

VTM Max. On-state Voltage Drop 1.4 V @ 10A, TJ = 25°C

rtOn-state slope resistance 24.0 m ΩTJ = 125°C

VT(TO) Threshold Voltage 1.1 V

IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C

Leakage Current 5.0 T J = 125 °C

IHMax. Holding Current 100 mA Anode Supply = 6V, Resistive load, Initial IT=1A

IL Max. Latching Current 200 mA Anode Supply = 6V, Resistive load

dv/dt Max. rate of rise of off-state Voltage 500 V/µs

di/dt Max. rate of rise of turned-on Current 150 A/µs

Absolute Maximum Ratings

Parameters 16TTS..S Units Conditions

VR = rated VRRM/ VDRM

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16TTS.. S Series

Triggering

PGM Max. peak Gate Power 8.0 W

PG(AV) Max. average Gate Power 2.0

+ IGM Max. paek positive Gate Current 1.5 A

- VGM Max. paek negative Gate Voltage 10 V

IGT Max. required DC Gate Current 90 mA Anode supply = 6V, resistive load, TJ = - 10°C

to trigger 60 Anode supply = 6V, resistive load, T J = 25°C

35 Anode supply = 6V, resistive load, TJ = 125°C

VGT Max. required DC Gate Voltage 3.0 V Anode supply = 6V, resistive load, TJ = - 10°C

to trigger 2.0 Anode supply = 6V, resistive load, TJ = 25°C

1.0 Anode supply = 6V, resistive load, TJ = 125°C

VGD Max. DC Gate Voltage not to trigger 0.25 TJ = 125°C, VDRM = rated value

IGD Max. DC Gate Current not to trigger 2.0 mA TJ = 125°C, VDRM = rated value

Parameters 16TTS..S Units Conditions

Switching

Parameters 16TTS..S Units Conditions

tgt Typical turn-on time 0.9 µs TJ = 25°C

trr Typical reverse recovery time 4 TJ = 125°C

tqTypical turn-off time 110

TJMax. Junction Temperature Range - 40 to 125 °C

Tstg Max. Storage Temperature Range - 40 to 125 °C

Soldering Temperature 240 °C for 10 seconds (1.6mm from case)

RthJC Max. Thermal Resistance Junction 1.3 °C/W DC operation

to Case

RthJA Typ. Thermal Resistance Junction 40 °C/W

to Ambient (PCB Mount)**

wt Approximate Weight 2 (0.07) g (oz.)

T Case Style D2 Pak (SMD-220)

Thermal-Mechanical Specifications

Parameters 16TTS..S Units Conditions

**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W

For recommended footprint and soldering techniques refer to application note #AN-994

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16TTS.. S Series

Fig. 2 - Current Rating Characteristics

Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics

Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 7 - Maximum Non-Repetitive Surge Current

Fig. 1 - Current Rating Characteristics

100

105

110

115

120

125

024681012

30°

60°

90°

120°

180°

Conduction Angle

Average On-state Current (A)

Maximum Allowable Case Temperature (°C)

16TTS.. Series

R (DC) = 1.3 K/W

thJC

100

105

110

115

120

125

0246810121416

30°

60°

90°

120° 180°

Maximum Allowable Case Temperature (°C)

Conduction Period

Average On-state Current (A)

16TTS.. Series

R (DC) = 1.3 K/W

thJC

024681012

RMS Limit

180°

120°

90°

60°

30°

Conduction Angle

Average On-state Current (A)

Maximum Average On-state Power Loss (W)

16TTS..

T = 125°C

0 2 4 6 8 10 12 14 16 18

180°

120°

90°

60°

30°

RMS Limit

Conduction Period

Average On-state Current (A)

Maximum Average On-state Power Loss (W)

16TTS..

T = 125°C

100

120

140

160

180

1 10 100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

RRM

Peak Half Sine Wave On-state Current (A)

16TTS..Series

100

120

140

160

180

200

220

0.01 0.1 1 10

Pulse Train Duration (s)

Maximum Non Repetitive Surge Current

Peak Half Sine Wave Forward Current (A)

Versus Pulse Train Duration.

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

16TTS.. Series

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16TTS.. S Series

Fig. 7 - On-state Voltage Drop Characteristics

Fig. 8 - Gate Characteristics

Fig. 9 - Thermal Impedance ZthJC Characteristics

100

1000

012345

T = 25°C

T = 125°C

Instantaneous On-state Voltage (V)

Instantaneous On-state Current (A)

16TTS.. Series

0.1

100

0.001 0.01 0.1 1 10 100

(b)

(a)

Rectangular gate pulse

(4) (3) (2) (1)

Instantaneous Gate Current (A)

Instantaneous Gate Voltage (V)

TJ = 25 °C

TJ = 125 °C

b)Recommended load line for

VGD

IGD Frequency Limited by PG(AV)

a)Recommended load line for

rated di/dt: 10 V, 20 ohms

tr = 0.5 µs, tp >= 6 µs

<= 30% rated di/dt: 10 V, 65 ohms

tr = 1 µs, tp >= 6 µs

(1) PGM = 40 , tp = 1 ms

(2) PGM = 20 W, tp = 2 ms

(3) PGM = 8 W, tp = 5 ms

(4) PGM = 4 W, tp = 10 ms

TJ = -10 °C

16TTS..

0.01

0.1

0.0001 0.001 0.01 0.1 1

Square Wave Pulse Duration (s)

thJC

Steady State Value

(DC Operation)

Transient Thermal Impedance Z (K/W)

16TTS.. Series

Single Pulse

D = 0.50

D = 0.33

D = 0.25

D = 0.17

D = 0.08

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16TTS.. S Series

9G3A

16TTS12S

9512

EXAMPLE: THIS IS AN 16TTS12S INTERNATIONAL

RECTIFIER LOGO PART NUMBER

Marking Information

DATE CODE (YYWW)

YY = YEAR

WW = WEEK

ASSEMBLY

LOT CODE

Tape & Reel Information

Dimensions in millimeters and inches

TRR

FEED DIR ECTION

TRL

FEED DIRECTION

10.90 (0.429)

10.70 (0.421) 16.10 (0.634)

15.90 (0.626)

1. 75 (0.069)

1. 25 (0.049)

1.85 ( 0.073 )

1.65 ( 0.065 )

4. 10 (0 . 161 )

3. 90 (0 . 153 )

1. 60 (0. 063 )

1. 50 (0. 059 )

DIA.

1.60 (0.063)

1.50 (0.059)

DIA.

11. 60 (0.457)

11. 40 (0.449)

15.42 (0.609)

15.22 (0.601)

4. 72 (0.186)

4. 52 (0.178)

24.30 (0.9 57 )

23.90 (0.9 41 )

0.368 (0.0145)

0.342 (0.0135)

36 0 ( 14.173)

DIA. MAX.

26.40 (1.039)

24.40 (0.961)

13.50 (0.532)

12.80 (0.504)DIA.

60 (2.362 )

DIA. MIN.

SMD-220 Tape & R eel

When ordering, indicate the part

number, part orientation, and the

quantity. Quantities are in multiples

of 8 00 pi eces pe r reel for both

TR L and TRR.

(K) (G)

(A)

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16TTS.. S Series

Outline Table

(K) (G)

1 (K) Cathode

2 (A) Anode

3 (G) Gate (A)

10.16 ( 0.40)

REF.

8.89 (0.35)

4.57 (0.18)

4.32 (0. 17 )

0.61 (0.02) MAX.

5 . 08 (0.20) R EF.

1.32 (0.05)

1.22 (0.05)

6.47 (0.25)

6.18 ( 0.24)

93°

REF.

2.61 ( 0.10 )

2.32 (0.09 )

5.28 (0.21)

4.78 (0.19)

4.69 (0.18)

4.20 ( 0.16)

0.55 (0.02)

0.46 (0.02)

1 4.73 (0.58)

1 5.49 (0.61)

1.40 (0.055)

1.14 (0.045)

3X 0.93 ( 0. 37)

0.69 (0.27)

2X 11.43 (0.45)

1 7.78 (0.70 )

8.89 (0.35)

3.81 ( 0.15)

2.08 (0.08)

2. 54 ( 0. 10)

MIN IMU M R E C OMME N D E D FOO T P R INT

16 T T S 12 S TRL

Device Code

1 5243

Ordering Information Table

1- Current Rating, RMS value

2- Circuit Configuration

T = Single Thyristor

3- Package

T = TO-220AC

4- Type of Silicon

S = Converter Grade

5- Voltage code: Code x 100 = V RRM

6- S = TO-220 D2Pak (SMD 220) Version

7- Tape and Reel Option

TRL = Left Reel

TRR = Right Orientation Reel

08 = 800V

12 = 1200V

Dimensions in millimeters and inches

(G) 3

(A)

1 (K)

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