PMV213SN N-channel TrenchMOS standard level FET 23 November 2020 Product data sheet 1. General description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 2. Features and benefits * Low on-state resistance in a small surface mount package 3. Applications * DC-to-DC primary side switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage 25 C < Tj < 150 C - - 100 V VGS gate-source voltage Tj = 25 C -30 - 30 V ID drain current VGS = 10 V; Tsp = 25 C - - 1.9 A RDSon drain-source on-state resistance VGS = 10 V; ID = 0.5 A; Tj = 25 C - 213 250 m Ptot total power dissipation Tsp = 25 C - - 2 W PMV213SN Nexperia N-channel TrenchMOS standard level FET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol 3 D G 1 2 mbb076 S SOT23 6. Ordering information Table 3. Ordering information Type number Package PMV213SN Name Description Version SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 SOT23 mm x 1.3 mm x 1 mm body 7. Marking Table 4. Marking codes Type number Marking code[1] PMV213SN %2N [1] % = placeholder for manufacturing site code PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 2 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage 25 C < Tj < 150 C - 100 V VDGR drain-gate voltage RGS = 20 k; 25 C < Tj < 150 C - 100 V VGS gate-source voltage Tj = 25 C -30 30 V ID drain current VGS = 10 V; Tsp = 25 C - 1.9 A VGS = 10 V; Tsp = 100 C - 1.2 A IDM peak drain current Tsp = 25 C; single pulse; tp 10 s - 7.6 A Ptot total power dissipation Tsp = 25 C - 2 W Tj junction temperature -55 150 C Tstg storage temperature -55 150 C Source-drain diode IS source current Tsp = 25 C - 1.7 A ISM peak source current single pulse; tp 10 s; Tsp = 25 C - 6.9 A aaa-032677 120 Pder (%) Ider (%) 80 80 40 40 0 Fig. 1. aaa-032678 120 0 50 100 150 Tsp (C) Normalized total power dissipation as a function of solder point temperature PMV213SN Product data sheet 0 200 Fig. 2. 0 100 150 Tsp (C) 200 Normalized continuous drain current as a function of solder point temperature All information provided in this document is subject to legal disclaimers. 23 November 2020 50 (c) Nexperia B.V. 2020. All rights reserved 3 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET aaa-032679 10 tp = 10 s ID (A) 100 s 1 1 ms Limit RDSon = VDS/ID 10-1 10 ms 100 ms DC 10-2 10-3 1 102 10 103 VDS (V) Tsp = 25 C; IDM is single pulse; VGS = 10 V Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 4 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Rth(j-sp) Conditions thermal resistance from junction to solder point Min Typ Max Unit - - 60 K/W aaa-032680 102 Zth(j-sp) (K/W) 10 duty cycle = 0.5 0.20 0.10 0.05 0.02 single pulse 1 -4 10 Fig. 4. 10-3 10-2 10-1 1 tp (s) 10 Transient thermal impedance from junction to solder point as a function of pulse duration PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 5 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage ID = 250 A; VGS = 0 V; Tj = 25 C 100 - - V ID = 250 A; VGS = 0 V; Tj = -55 C 90 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 25 C 2 3 4 V ID = 1 mA; VDS = VGS; Tj = 150 C 1.2 - - V ID = 1 mA; VDS = VGS; Tj = -55 C - - 4.4 V VDS = 100 V; VGS = 0 V; Tj = 25 C - - 1 A VDS = 100 V; VGS = 0 V; Tj = 150 C - - 100 A VGS = 20 V; VDS = 0 V; Tj = 25 C - 10 100 nA VGSth IDSS drain leakage current IGSS gate leakage current VGS = -20 V; VDS = 0 V; Tj = 25 C - -10 -100 A RDSon drain-source on-state resistance VGS = 10 V; ID = 0.5 A; Tj = 25 C - 213 250 m VGS = 10 V; ID = 0.5 A; Tj = 150 C - 490 575 m QG(tot) total gate charge - 7 - nC QGS gate-source charge VDS = 80 V; ID = 1.2 A; VGS = 10 V; Tj = 25 C - 1.4 - nC QGS(th) pre-threshold gatesource charge - 2.5 - nC Ciss input capacitance - 330 - pF Coss output capacitance - 36 - pF Crss reverse transfer capacitance - 22 - pF td(on) turn-on delay time - 5.5 - ns tr rise time - 5 - ns td(off) turn-off delay time - 9.5 - ns tf fall time - 3 - ns VDS = 20 V; f = 1 MHz; VGS = 0 V; Tj = 25 C VDS = 50 V; RL = 33 ; VGS = 10 V; RG(ext) = 6 ; Tj = 25 C Source-drain diode VSD source-drain voltage IS = 1.5 A; VGS = 0 V; Tj = 25 C - 0.83 1.2 V trr reverse recovery time - 36 - ns Qr recovered charge IS = 1.2 A; dIS/dt = -100 A/s; VGS = 0 V; Tj = 25 C - 23 - nC PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 6 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET aaa-032681 6 VGS = 10 V ID (A) ID (A) 5.4 V 4 aaa-032682 6 6.0 V 4 5.2 V Tj = 25 C 5.0 V 2 2 4.8 V 4.6 V 0 Fig. 5. 4.4 V 4.2 V 0 0.5 1.0 1.5 VDS (V) Tj = 150 C 0 2.0 0 2 4 VGS (V) 6 Tj = 25 C VDS > ID x RDSon Output characteristics: drain current as a Fig. 6. function of drain-source voltage; typical values Transfer characteristics: drain current as a function of gate-source voltage; typical values aaa-032683 400 VGS = 5 V RDSon 5.2 V 5.4 V 300 aaa-032684 3 a 6V 2 10 V 200 1 100 0 0 2 4 ID (A) 0 -60 6 0 60 120 Tj (C) 180 Tj = 25 C Fig. 7. Drain-source on-state resistance as a function of drain current; typical values PMV213SN Product data sheet Fig. 8. Normalized drain-source on-state resistance as a function of junction temperature All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 7 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET aaa-032685 5 aaa-032686 10-1 ID (A) VGSth (V) max 4 3 min 10-2 typ max 10-3 typ 10-4 2 min 10-5 1 0 -60 0 60 120 Tj (C) 10-6 180 ID = 1 mA; VDS = VGS Fig. 9. 0 2 4 VGS (V) 6 Tj = 25 C Gate-source threshold voltage as a function of junction temperature Fig. 10. Subthreshold drain current as a function of gate-source voltage aaa-032687 103 C (pF) aaa-032688 6 IS (A) Ciss 102 4 Coss Crss Tj = 150 C 10 2 Tj = 25 C 1 10-1 1 10 VDS (V) 0 102 f = 1 MHz; VGS = 0 V 0 0.3 0.6 0.9 VSD (V) 1.2 VGS = 0 V Fig. 11. Input, output and reverse transfer capacitances Fig. 12. Source (diode forward) current as a function of as a function of drain-source voltage; typical source-drain (diode forward) voltage; typical values values PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 8 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET aaa-032689 10 VGS (V) 8 VDS = 20 V 6 80 V 50 V 4 2 0 0 2 4 6 QG (nC) 8 ID = 1.2 A; Tj = 25 C Fig. 13. Gate-source voltage as a function of gate charge; typical values PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 9 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET 11. Package outline Plastic surface-mounted package; 3 leads SOT23 B D A E X HE v A 3 Q A A1 1 c 2 e1 bp w B Lp e detail X 0 1 2 mm scale Dimensions (mm are the original dimensions) Unit mm max nom min A A1 1.1 0.1 0.9 bp c D E 0.48 0.15 3.0 1.4 0.38 0.09 2.8 1.2 e e1 HE 1.9 0.95 Lp Q 2.5 0.45 0.55 2.1 0.15 0.45 v w 0.2 0.1 sot023_po Outline version References IEC SOT23 JEDEC JEITA European projection Issue date 14-06-19 14-09-22 TO-236AB Fig. 14. Package outline SOT23 PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 10 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET 12. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3x) 0.7 (3x) Dimensions in mm 0.5 (3x) 0.6 (3x) 1 sot023_fr Fig. 15. Reflow soldering footprint for SOT23 2.2 1.2 (2x) 1.4 (2x) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 16. Wave soldering footprint for SOT23 PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 11 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET 13. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMV213SN v.3 20201123 Product data sheet - PMV213SN v.2 Modifications: * * The format of this data sheet has been redesigned to comply with the identity guidelines of Nexperia. Legal texts have been adapted to the new company name where appropriate. PMV213SN v.2 20030219 Product data sheet - PMV213SN v.1 PMV213SN v.1 20030115 Product data sheet - - PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 12 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET 14. Legal information injury, death or severe property or environmental damage. Nexperia and its suppliers accept no liability for inclusion and/or use of Nexperia products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Data sheet status Quick reference data -- The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Document status [1][2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Suitability for use -- Nexperia products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an Nexperia product can reasonably be expected to result in personal PMV213SN Product data sheet Applications -- Applications that are described herein for any of these products are for illustrative purposes only. Nexperia makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using Nexperia products, and Nexperia accepts no liability for any assistance with applications or customer product design. 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Nexperia accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without Nexperia's warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond Nexperia's specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies Nexperia for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond Nexperia's standard warranty and Nexperia's product specifications. Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 13 / 14 PMV213SN Nexperia N-channel TrenchMOS standard level FET Contents 1. General description...................................................... 1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Marking.......................................................................... 2 8. Limiting values............................................................. 3 9. Thermal characteristics............................................... 5 10. Characteristics............................................................ 6 11. Package outline........................................................ 10 12. Soldering................................................................... 11 13. Revision history........................................................12 14. Legal information......................................................13 (c) Nexperia B.V. 2020. All rights reserved For more information, please visit: http://www.nexperia.com For sales office addresses, please send an email to: salesaddresses@nexperia.com Date of release: 23 November 2020 PMV213SN Product data sheet All information provided in this document is subject to legal disclaimers. 23 November 2020 (c) Nexperia B.V. 2020. All rights reserved 14 / 14