PMV213SN,215 - NEXPERIA - Datasheet.Directory

PMV213SN

N-channel TrenchMOS standard level FET

23 November 2020 Product data sheet

1. General description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS

technology.

2. Features and benefits

•Low on-state resistance in a small surface mount package

3. Applications

•DC-to-DC primary side switching

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage 25 °C < Tj < 150 °C - - 100 V

VGS gate-source voltage Tj = 25 °C -30 - 30 V

IDdrain current VGS = 10 V; Tsp = 25 °C - - 1.9 A

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 0.5 A; Tj = 25 °C - 213 250 mΩ

Ptot total power dissipation Tsp = 25 °C - - 2 W

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate

2 S source

3 D drain

1 2

SOT23

mbb076

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PMV213SN SOT23 plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9

mm x 1.3 mm x 1 mm body

SOT23

7. Marking

Table 4. Marking codes

Type number Marking code[1]

PMV213SN %2N

[1] % = placeholder for manufacturing site code

Product data sheet 23 November 2020 2 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C < Tj < 150 °C - 100 V

VDGR drain-gate voltage RGS = 20 kΩ; 25 °C < Tj < 150 °C - 100 V

VGS gate-source voltage Tj = 25 °C -30 30 V

VGS = 10 V; Tsp = 25 °C - 1.9 AIDdrain current

VGS = 10 V; Tsp = 100 °C - 1.2 A

IDM peak drain current Tsp = 25 °C; single pulse; tp ≤ 10 µs - 7.6 A

Ptot total power dissipation Tsp = 25 °C - 2 W

Tjjunction temperature -55 150 °C

Tstg storage temperature -55 150 °C

Source-drain diode

ISsource current Tsp = 25 °C - 1.7 A

ISM peak source current single pulse; tp ≤ 10 µs; Tsp = 25 °C - 6.9 A

Tsp (°C)

0 20015050 100

aaa-032677

120

Pder

(%)

Fig. 1. Normalized total power dissipation as a

function of solder point temperature

Tsp (°C)

0 20015050 100

aaa-032678

120

Ider

(%)

Fig. 2. Normalized continuous drain current as a

function of solder point temperature

Product data sheet 23 November 2020 3 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

aaa-032679

10-1

10-2

(A)

10-3

VDS (V)

1 103

102

Limit RDSon = VDS/ID

tp = 10 µs

100 µs

1 ms

10 ms

100 ms

Tsp = 25 °C; IDM is single pulse; VGS = 10 V

Fig. 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Product data sheet 23 November 2020 4 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-sp) thermal resistance from

junction to solder point

- - 60 K/W

aaa-032680

10-4

tp (s)

1 1010-1

10-3 10-2

102

Zth(j-sp)

(K/W)

0.20

duty cycle = 0.5

0.10

0.05

0.02

single pulse

Fig. 4. Transient thermal impedance from junction to solder point as a function of pulse duration

Product data sheet 23 November 2020 5 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

ID = 250 µA; VGS = 0 V; Tj = 25 °C 100 - - VV(BR)DSS drain-source

breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 90 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C 2 3 4 V

ID = 1 mA; VDS = VGS; Tj = 150 °C 1.2 - - V

VGSth gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = -55 °C - - 4.4 V

VDS = 100 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

VDS = 100 V; VGS = 0 V; Tj = 150 °C - - 100 µA

VGS = 20 V; VDS = 0 V; Tj = 25 °C - 10 100 nAIGSS gate leakage current

VGS = -20 V; VDS = 0 V; Tj = 25 °C - -10 -100 µA

VGS = 10 V; ID = 0.5 A; Tj = 25 °C - 213 250 mΩRDSon drain-source on-state

resistance VGS = 10 V; ID = 0.5 A; Tj = 150 °C - 490 575 mΩ

QG(tot) total gate charge - 7 - nC

QGS gate-source charge - 1.4 - nC

QGS(th) pre-threshold gate-

source charge

VDS = 80 V; ID = 1.2 A; VGS = 10 V;

Tj = 25 °C

- 2.5 - nC

Ciss input capacitance - 330 - pF

Coss output capacitance - 36 - pF

Crss reverse transfer

capacitance

VDS = 20 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

- 22 - pF

td(on) turn-on delay time - 5.5 - ns

trrise time - 5 - ns

td(off) turn-off delay time - 9.5 - ns

tffall time

VDS = 50 V; RL = 33 Ω; VGS = 10 V;

RG(ext) = 6 Ω; Tj = 25 °C

- 3 - ns

Source-drain diode

VSD source-drain voltage IS = 1.5 A; VGS = 0 V; Tj = 25 °C - 0.83 1.2 V

trr reverse recovery time - 36 - ns

Qrrecovered charge

IS = 1.2 A; dIS/dt = -100 A/µs;

VGS = 0 V; Tj = 25 °C - 23 - nC

Product data sheet 23 November 2020 6 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

VDS (V)

0 2.01.50.5 1.0

aaa-032681

(A)

VGS = 10 V

5.2 V

5.4 V

6.0 V

5.0 V

4.8 V

4.6 V

4.4 V

4.2 V

Tj = 25 °C

Fig. 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

VGS (V)

0 642

aaa-032682

(A)

Tj = 25 °C

Tj = 150 °C

VDS > ID x RDSon

Fig. 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

aaa-032683

ID (A)

0 642

200

100

300

400

RDSon

10 V

5.2 V 5.4 V

VGS = 5 V

6 V

Tj = 25 °C

Fig. 7. Drain-source on-state resistance as a function

of drain current; typical values

Tj (°C)

-60 1801200 60

aaa-032684

Fig. 8. Normalized drain-source on-state resistance as

a function of junction temperature

Product data sheet 23 November 2020 7 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

Tj (°C)

-60 1801200 60

aaa-032685

VGSth

(V)

min

typ

max

ID = 1 mA; VDS = VGS

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

aaa-032686

VGS (V)

0 642

10-4

10-5

10-2

10-3

10-1

(A)

10-6

min typ max

Tj = 25 °C

Fig. 10. Subthreshold drain current as a function of

gate-source voltage

VDS (V)

10-1 102

101

aaa-032687

102

103

(pF)

Crss

Coss

Ciss

f = 1 MHz; VGS = 0 V

Fig. 11. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

VSD (V)

0 1.20.90.3 0.6

aaa-032688

(A)

Tj = 25 °C

Tj = 150 °C

VGS = 0 V

Fig. 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

values

Product data sheet 23 November 2020 8 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

QG (nC)

0 862 4

aaa-032689

VGS

(V)

50 V

80 V

VDS = 20 V

ID = 1.2 A; Tj = 25 °C

Fig. 13. Gate-source voltage as a function of gate charge; typical values

Product data sheet 23 November 2020 9 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

11. Package outline

References

Outline

version

European

projection Issue date

IEC JEDEC JEITA

SOT23 TO-236AB

sot023_po

14-06-19

14-09-22

Plastic surface-mounted package; 3 leads SOT23

0 1 2 mm

scale

1 2

w B

v A

Unit

max

nom

min

1.1 0.1 0.15 3.0 1.4

0.2

Dimensions (mm are the original dimensions)

A1bp

0.48

c D E e e1

0.95

HELpQ v w

0.11.9

2.1 0.150.9 0.09 2.8 1.20.38

2.5 0.45

0.45

0.55

detail X

Fig. 14. Package outline SOT23

Product data sheet 23 November 2020 10 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

12. Soldering

solder lands

solder resist

occupied area

solder paste

sot023_fr

0.5

(3×)

0.6

(3×)

0.6

(3×)

0.7

(3×)

3.3

2.9

1.7

1.9

Dimensions in mm

Fig. 15. Reflow soldering footprint for SOT23

solder lands

solder resist

occupied area

preferred transport direction during soldering

sot023_fw

2.8

4.5

1.4

4.6

1.4

(2×)

1.2

(2×)

2.2

2.6

Dimensions in mm

Fig. 16. Wave soldering footprint for SOT23

Product data sheet 23 November 2020 11 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

13. Revision history

Table 8. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PMV213SN v.3 20201123 Product data sheet - PMV213SN v.2

Modifications: •The format of this data sheet has been redesigned to comply with the identity guidelines of

Nexperia.

•Legal texts have been adapted to the new company name where appropriate.

PMV213SN v.2 20030219 Product data sheet - PMV213SN v.1

PMV213SN v.1 20030115 Product data sheet - -

Product data sheet 23 November 2020 12 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

14. Legal information

Data sheet status

Document status

[1][2]

Product

status [3]

Definition

Objective [short]

data sheet

Development This document contains data from

the objective specification for

product development.

Preliminary [short]

data sheet

Qualification This document contains data from

the preliminary specification.

Product [short]

data sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the internet at https://www.nexperia.com.

Definitions

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internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any representations or

warranties as to the accuracy or completeness of information included herein

and shall have no liability for the consequences of use of such information.

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with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the relevant

full data sheet, which is available on request via the local Nexperia sales

office. In case of any inconsistency or conflict with the short data sheet, the

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Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

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or warranty that such applications will be suitable for the specified use

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

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In the event that customer uses the product for design-in and use in

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Notice: All referenced brands, product names, service names and

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Product data sheet 23 November 2020 13 / 14

Nexperia PMV213SN

N-channel TrenchMOS standard level FET

Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 3

9. Thermal characteristics............................................... 5

10. Characteristics............................................................ 6

11. Package outline........................................................ 10

12. Soldering................................................................... 11

13. Revision history........................................................12

14. Legal information......................................................13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release: 23 November 2020

Product data sheet 23 November 2020 14 / 14