IRHM3230PBF - International Rectifier

Absolute Maximum RatingsAbsolute Maximum Ratings

Absolute Maximum Ratings

ParameterParameter

Parameter UnitsUnits

UnitsUnits

Units

ID @ VGS = 12V, TC = 25°C Continuous Drain Current 9.0

ID @ VGS = 12V, TC = 100°C Continuous Drain Current 6.0

IDM Pulsed Drain Current ➀36

PD @ TC = 25°C Max. Power Dissipation 75 W

Linear Derating Factor 0.60 W/°C

VGS Gate-to-Source Voltage ±20 V

EAS Single Pulse Avalanche Energy ➁330 mJ

IAR Avalanche Current ➀9.0 A

EAR Repetitive Avalanche Energy ➀7.5 mJ

dv/dt Peak Diode Recovery dv/dt ➂5.0 V/ns

TJOperating Junction -55 to 150

TSTG Storage Temperature Range

Lead Temperature 300 ( 0.063 in.(1.6mm) from case for 10s)

Weight 9.3 (Typical ) g

Pre-IrradiationPre-Irradiation

Pre-Irradiation

International Rectifiers RADHard HEXFET®

technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for both Total Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

oC

A

RADIATION HARDENEDRADIATION HARDENED

RADIATION HARDENED

POWER MOSFETPOWER MOSFET

POWER MOSFET

THRU-HOLE (THRU-HOLE (

THRU-HOLE (T0-254AA)T0-254AA)

T0-254AA)T0-254AA)

T0-254AA)

8/10/01

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Product SummaryProduct Summary

Product Summary

Part Number Radiation LevelPart Number Radiation Level

Part Number Radiation Level R R

R R

R

DS(on)DS(on)

DS(on) II

II

IDD

DD

D

IRHM7230 100K Rads (Si) 0.40Ω9.0A

IRHM3230 300K Rads (Si) 0.40Ω9.0A

IRHM4230 600K Rads (Si) 0.40Ω9.0A

IRHM8230 1000K Rads (Si) 0.40Ω9.0A

For footnotes refer to the last page

IRHM7230IRHM7230

IRHM7230

200V, N-CHANNEL200V, N-CHANNEL

200V, N-CHANNEL

RAD HardRAD Hard

RAD Hard



HEXFETHEXFET

HEXFET

®

TECHNOLOGYTECHNOLOGY

TECHNOLOGY

TO-254AATO-254AA

TO-254AA

Features:Features:

Features:

!Single Event Effect (SEE) Hardened

!Low RDS(on)

!Low Total Gate Charge

!Proton Tolerant

!Simple Drive Requirements

!Ease of Paralleling

!Hermetically Sealed

!Ceramic Package

!Light Weight

PD - 90713E

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IRHM7230IRHM7230

IRHM7230 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Note: Corresponding Spice and Saber models are available on the G&S Website.Note: Corresponding Spice and Saber models are available on the G&S Website.

Note: Corresponding Spice and Saber models are available on the G&S Website.

For footnotes refer to the last page

Source-Drain Diode Ratings and CharacteristicsSource-Drain Diode Ratings and Characteristics

Source-Drain Diode Ratings and Characteristics

ParameterParameter

Parameter MinMin

MinMin

Min TypTyp

TypTyp

Typ MaxMax

MaxMax

Max UnitsUnits

UnitsUnits

Units Test ConditionsTest Conditions

Test ConditionsTest Conditions

Test Conditions

ISContinuous Source Current (Body Diode)   9.0

ISM Pulse Source Current (Body Diode) ➀ 36

VSD Diode Forward Voltage   1.6 V Tj = 25°C, IS = 9.0A, VGS = 0V ➃

trr Reverse Recovery Time   460 nS Tj = 25°C, IF = 9.0A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge   5.0 µC VDD ≤ 50V ➃

ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

A

Thermal ResistanceThermal Resistance

Thermal Resistance

ParameterParameter

Parameter MinMin

MinMin

Min TypTyp

TypTyp

Typ MaxMax

MaxMax

Max UnitsUnits

UnitsUnits

Units Test ConditionsTest Conditions

Test ConditionsTest Conditions

Test Conditions

RthJC Junction-to-Case   1.67

RthJA Junction-to-Ambient   48 °C/W Typical socket mount

RthCS Case-to-Sink  0.21 

Electrical CharacteristicsElectrical Characteristics

Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)

@ Tj = 25°C (Unless Otherwise Specified)@ Tj = 25°C (Unless Otherwise Specified)

@ Tj = 25°C (Unless Otherwise Specified)

ParameterParameter

Parameter MinMin

MinMin

Min TypTyp

TypTyp

Typ MaxMax

MaxMax

Max UnitsUnits

UnitsUnits

Units Test ConditionsTest Conditions

Test ConditionsTest Conditions

Test Conditions

BVDSS Drain-to-Source Breakdown Voltage 200   V VGS = 0V, ID = 1.0mA

∆BVDSS/∆TJTemperature Coefficient of Breakdown  0.27  V/°C Reference to 25°C, ID = 1.0mA

Voltage

RDS(on) Static Drain-to-Source On-State   0.40 ΩVGS = 12V, ID =6.0A

Resistance   0.49 VGS = 12V, ID = 9.0A

VGS(th) Gate Threshold Voltage 2.0  4.0 V VDS = VGS, ID = 1.0mA

gfs Forward Transconductance 3.0   S ( ) VDS > 15V, IDS = 6.0A ➃

IDSS Zero Gate Voltage Drain Current   25 VDS= 160V ,VGS=0V

  250 VDS = 160V,

VGS = 0V, TJ = 125°C

IGSS Gate-to-Source Leakage Forward   100 VGS = 20V

IGSS Gate-to-Source Leakage Reverse   -100 VGS = -20V

QgTotal Gate Charge   50 VGS =12V, ID =9.0A

Qgs Gate-to-Source Charge   10 nC VDS = 100V

Qgd Gate-to-Drain (Miller) Charge   20

td(on) Turn-On Delay Time   35 VDD = 100V, ID =9.0A

trRise Time   80 VGS =12V, RG = 7.5Ω

td(off) Turn-Off Delay Time   60

tfFall Time   46

LS + LDTotal Inductance  6.8  Measured from Drain Lead (6mm/ 0.25in.

from package) to source lead (6mm/0.25in from

package) with Source wires bonded from Source Pin to

Drain Pad

Ciss Input Capacitance  1100  VGS = 0V, VDS = 25V

Coss Output Capacitance  250  pF f = 1.0MHz

Crss Reverse Transfer Capacitance  65 

nA

Ω

➃

nH

ns

µA

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7230IRHM7230

IRHM7230IRHM7230

IRHM7230

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation

Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅

ParameterParameter

Parameter 100 K Rads(Si) 300 - 1000K Rads (Si)

U U

Unitsnits

nitsnits

nits

Test Conditions Test Conditions

Test Conditions

Min Min

Min Max Max

Max Max

Max Min Max Min Max

Min Max Min Max

Min Max

BVDSS Drain-to-Source Breakdown Voltage 200  200  V VGS = 0V, ID = 1.0mA

V/5JD Gate Threshold Voltage 2.0 4.0 1.25 4.5 VGS = VDS, ID = 1.0mA

IGSS Gate-to-Source Leakage Forward  100  100 nA VGS = 20V

IGSS Gate-to-Source Leakage Reverse  -100  -100 VGS = -20 V

IDSS Zero Gate Voltage Drain Current  25  25 µA VDS=160V, VGS =0V

RDS(on) Static Drain-to-Source"➃  0.40  0.53 Ω VGS = 12V, ID =6.0A

On-State Resistance (TO-3)

RDS(on) Static Drain-to-Source"➃  0.40  0.53 Ω VGS = 12V, ID =6.0A

On-State Resistance (TO-254AA)

International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.

The hardness assurance program at International Rectifier is comprised of two radiation environments.

Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both

pre- and post-irradiation performance are tested and specified using the same drive circuitry and test

conditions in order to provide a direct comparison.

Radiation CharacteristicsRadiation Characteristics

Radiation Characteristics

1. Part numbers IRHM7230

2. Part number IRHM3230, IRHM4230, IRHM8230

Fig a.Fig a.

Fig a. Single Event Effect, Safe Operating Area

VSD Diode Forward Voltage"➃  1.6  1.6 V VGS = 0V, IS = 9.0A

International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for

Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.

For footnotes refer to the last page

Table 2. Single Event Effect Safe Operating AreaTable 2. Single Event Effect Safe Operating Area

Table 2. Single Event Effect Safe Operating Area

IonIon

Ion LETLET

LETLET

LET Energy Range Energy Range

Energy Range Energy Range

Energy Range VV

VV

VDS(V)DS(V)

DS(V)DS(V)

DS(V)

MeV/(mg/cm )) (MeV) (µm)

@ @

@VV

VV

VGSGS

GSGS

GS=0V @=0V @

=0V @=0V @

=0V @VV

VV

VGSGS

GSGS

GS=-5V@=-5V@

=-5V@=-5V@

=-5V@VV

VV

VGSGS

GSGS

GS=-10V@=-10V@

=-10V@=-10V@

=-10V@VV

VV

VGSGS

GSGS

GS=-15V@=-15V@

=-15V@=-15V@

=-15V@VV

VV

VGSGS

GSGS

GS=-20V=-20V

=-20V=-20V

=-20V

Cu 28 285 43 190 180 170 125 

Br 36.8 305 39 100 100 100 50 

0

50

100

150

200

0 -5 -10 -15 -20

VGS

VDS

Cu

Br

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IRHM7230IRHM7230

IRHM7230 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Post-IrradiationPost-Irradiation

Post-Irradiation

Fig 2.Fig 2.

Fig 2. Typical Response of On-State Resistance

Vs. Total Dose Exposure

Fig 1.Fig 1.

Fig 1. Typical Response of Gate Threshhold

Voltage Vs. Total Dose Exposure

Fig 3.Fig 3.

Fig 3. Typical Response of Transconductance

Vs. Total Dose Exposure

Fig 4.Fig 4.

Fig 4. Typical Response of Drain to Source

Breakdown Vs. Total Dose Exposure

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7230IRHM7230

IRHM7230IRHM7230

IRHM7230

Post-IrradiationPost-Irradiation

Post-Irradiation

Fig 6.Fig 6.

Fig 6. Typical On-State Resistance Vs.

Neutron Fluence Level

Fig 5.Fig 5.

Fig 5. Typical Zero Gate Voltage Drain

Current Vs. Total Dose Exposure

Fig 8b.Fig 8b.

Fig 8b. VDSS Stress Equals

80% of BVDSS During Radiation

Fig 7.Fig 7.

Fig 7. Typical Transient Response of

Rad Hard HEXFET During 1x1012 Rad

(Si)/Sec Exposure

Fig 8a.Fig 8a.

Fig 8a. Gate Stress of

VGSS Equals 12 Volts During

Radiation

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IRHM7230IRHM7230

IRHM7230 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Post-IrradiationPost-Irradiation

Post-Irradiation

Radiation CharacteristicsRadiation Characteristics

Radiation Characteristics

Fig 10.Fig 10.

Fig 10. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Fig 9.Fig 9.

Fig 9. Typical Output Characteristics

Pre-Irradiation

Fig 11.Fig 11.

Fig 11. Typical Output Characteristics

Post-Irradiation 300K Rads (Si) Fig 12.Fig 12.

Fig 12.Fig 12.

Fig 12. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

Note: Bias Conditions during radiation: V/5 = 12 Vdc, V,5 = 0 Vdc

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7230IRHM7230

IRHM7230IRHM7230

IRHM7230

Radiation CharacteristicsRadiation Characteristics

Radiation Characteristics

Fig 15.Fig 15.

Fig 15. Typical Output Characteristics

Post-Irradiation 300K Rads (Si)

Fig 16.Fig 16.

Fig 16. Typical Output Characteristics

Post-Irradiation 1 Mega Rads (Si)

Fig 13.Fig 13.

Fig 13. Typical Output Characteristics

Pre-Irradiation

Fig 14.Fig 14.

Fig 14. Typical Output Characteristics

Post-Irradiation 100K Rads (Si)

Note: Bias Conditions during radiation: V/5 = 0 Vdc, V,5 = 160 Vdc

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IRHM7230IRHM7230

IRHM7230 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Fig 20. Normalized On-Resistance

Vs. Temperature

Fig 18. Typical Output CharacteristicsFig 17. Typical Output Characteristics

Fig 19. Typical Transfer Characteristics

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7230IRHM7230

IRHM7230IRHM7230

IRHM7230

Fig 24. Maximum Safe Operating

Area

Fig 22. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 21. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 23. Typical Source-Drain Diode

Forward Voltage

29

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IRHM7230IRHM7230

IRHM7230 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

Fig 26a. Switching Time Test Circuit

V

DS

90%

10%

V

GS t

d(on)

t

r

t

d(off)

t

f

Fig 26b. Switching Time Waveforms

VDS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

RD

VGS

RG

D.U.T.

+

-

VDD

Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 25. Maximum Drain Current Vs.

Case Temperature

VGS

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Pre-IrradiationPre-Irradiation

Pre-Irradiation IRHM7230IRHM7230

IRHM7230IRHM7230

IRHM7230

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T. V

DS

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

12 V

Fig 29b. Gate Charge Test Circuit

Fig 29a. Basic Gate Charge Waveform

Fig 28c. Maximum Avalanche Energy

Vs. Drain Current

Fig 28b. Unclamped Inductive Waveforms

Fig 28a. Unclamped Inductive Test Circuit

tp

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

VDS

+

-V

DD

DRIVER

A

15V

20V

V/5

12 www.irf.com

IRHM7230IRHM7230

IRHM7230 Pre-IrradiationPre-Irradiation

Pre-IrradiationPre-Irradiation

Pre-Irradiation

➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%

➄ Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VGSGS

GSGS

GS Bias. Bias.

Bias. Bias.

Bias.

12 volt VGS applied and VDS = 0 during

irradiation per MIL-STD-750, method 1019, condition A.

➅ Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VTotal Dose Irradiation with V

Total Dose Irradiation with VDSDS

DSDS

DS Bias. Bias.

Bias. Bias.

Bias.

160 volt VDS applied and VGS = 0 during

irradiation per MlL-STD-750, method 1019, condition A.

➀ Repetitive Rating; Pulse width limited by

maximum junction temperature.

➁ VDD = 25V, starting TJ = 25°C, L=8.15mH

Peak IL = 9.0A, VGS =12V

➂ ISD ≤ 9.0A, di/dt ≤ 120A/µs,

VDD ≤ 200V, TJ ≤ 150°C

Foot Notes: Foot Notes:

Foot Notes:

IR WORLD HEADQUARTERS:IR WORLD HEADQUARTERS:

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information..

..

.

Data and specifications subject to change without notice. 08/01

Case Outline and Dimensions  TO-254AACase Outline and Dimensions  TO-254AA

Case Outline and Dimensions  TO-254AA

3.78 ( .149 )

3.53 ( .139 )

-A-

13.84 ( .545 )

13.59 ( .535 ) 6.60 ( .260 )

6.32 ( .249 )

20.32 ( .800 )

20.07 ( .790 ) 13.84 ( .545 )

13.59 ( .535 )

-C-

1.14 ( .045 )

0.89 ( .035 ) 3.81 ( .150 )

1.27 ( .050 )

1.02 ( .040 )

-B-

.12 ( .005 )

3X

2X

3.81 ( .150 )

1 2 3

17.40 ( .685 )

16.89 ( .665 )

31.40 ( 1.235 )

30.39 ( 1.199 )

.50 ( .020 ) M C A M B

.25 ( .010 ) M C

LEGEND

1 - COL

L

2 - EMI

T

3 - GAT

E

IRHM57163SEDIRHM57163SED

IRHM57163SED

IRHM57163SEUIRHM57163SEU

IRHM57163SEU

LEGEND

1- DRAIN

2- SOURCE

3- GATE

BERYLLIA WARNING PER MIL-PRF-19500 BERYLLIA WARNING PER MIL-PRF-19500

BERYLLIA WARNING PER MIL-PRF-19500

Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them

which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids

that will produce fumes containing beryllium.

CAUTION CAUTION

CAUTION