MURS220T3G, NRVUS220VT3G, SURS8220T3G Surface Mount Ultrafast Power Rectifiers Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system. Features * * * * * * Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling High Temperature Glass Passivated Junction Low Forward Voltage Drop (0.77 Volts Max @ 2.0 A, TJ = 150C) NRVUS and SURS8 Prefixes for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant www.onsemi.com ULTRAFAST RECTIFIERS 2 AMPERES 200 VOLTS SMB CASE 403A MARKING DIAGRAM Mechanical Characteristics: * Case: Epoxy, Molded * Weight: 95 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal AYWW U2DG G Leads are Readily Solderable * Lead and Mounting Surface Temperature for Soldering Purposes: * * * * 260C Max. for 10 Seconds Shipped in 12 mm Tape and Reel, 2500 units per reel Polarity: Polarity Band Indicates Cathode Lead Marking: U2D ESD Ratings: Machine Model = C (> 400 V) Human Body Model = 3B (> 8 kV) U2D A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping MURS220T3G SMB (Pb-Free) 2,500 / Tape & Reel NRVUS220VT3G SMB (Pb-Free) 2,500 / Tape & Reel SURS8220T3G SMB (Pb-Free) 2,500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2016 October, 2016 - Rev. 4 1 Publication Order Number: MURS220T3/D MURS220T3G, NRVUS220VT3G, SURS8220T3G MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 200 V Average Rectified Forward Current IF(AV) 2.0 @ TL = 145C A Non-Repetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM Operating Junction Temperature Range A 40 TJ -65 to +175 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Lead (TL = 25C) Symbol Value Unit RJL 13 C/W Symbol Value Unit ELECTRICAL CHARACTERISTICS Characteristic Maximum Instantaneous Forward Voltage (Note 1) (IF = 2.0 A, TJ = 25C) (IF = 2.0 A, TJ = 150C) vF Maximum Instantaneous Reverse Current (Note 1) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 150C) IR Maximum Reverse Recovery Time (IF = 1.0 A, di/dt = 50 A/ms) (IF = 0.5 A, iR = 1.0 A, IR to 0.25 A) trr Volts 0.95 0.77 mA 2.0 50 ns 35 25 Maximum Forward Recovery Time tfr ns 25 (IF = 1.0 A, di/dt = 100 A/ms, Rec. to 1.0 V) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. www.onsemi.com 2 MURS220T3G, NRVUS220VT3G, SURS8220T3G 10 10 7.0 7.0 5.0 5.0 175C 3.0 3.0 TC = 175C 2.0 TC = 25C 1.0 0.7 0.5 0.3 0.2 0.1 TC = 100C 1.0 TC = 25C 0.7 0.5 0.3 0.2 0.1 0.07 0.07 0.05 0.05 0.03 0.03 0.02 0.02 0.01 0.01 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.2 1.3 180 200 1.1 VF, INSTANTANEOUS VOLTAGE (VOLTS) VF, INSTANTANEOUS VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 100 80 40 20 8.0 4.0 2.0 0.8 0.4 0.2 TJ = 175C TJ = 175C IR, REVERSE CURRENT (m A) IR, REVERSE CURRENT (m A) 2.0 IF , INSTANTANEOUS FORWARD CURRENT (AMPS) I , INSTANTANEOUS FORWARD CURRENT (AMPS) F 100C TJ = 100C 0.08 0.04 0.02 0.008 0.004 0.002 TJ = 25C 10 TJ = 100C 1.0 TJ = 25C 0.1 0.01 0 20 40 60 80 100 120 140 160 180 200 0 20 40 60 80 100 120 140 160 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current* Figure 4. Maximum Reverse Current * The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these same curves if applied VR is sufficiently below rated VR. www.onsemi.com 3 MURS220T3G, NRVUS220VT3G, SURS8220T3G 50 45 NOTE: TYPICAL CAPACITANCE AT 0 V = 45 pF C, CAPACITANCE (pF) 40 35 30 25 20 15 10 5.0 0 0 10 20 30 40 50 60 70 80 90 100 VR, REVERSE VOLTAGE (VOLTS) IF(AV) , AVERAGE FORWARD CURRENT (AMPS) Figure 5. Typical Capacitance 10 RATED VOLTAGE APPLIED RqJL = 13C/W TJ = 175C 9.0 8.0 7.0 6.0 5.0 4.0 dc 3.0 2.0 SQUARE WAVE 1.0 0 80 90 100 110 120 130 140 150 160 170 180 TC, CASE TEMPERATURE (C) PF(AV) , AVERAGE POWER DISSIPATION (WATTS) Figure 6. Current Derating, Case 5.0 TJ = 175C 4.0 3.0 2.0 dc SQUARE WAVE 1.0 0 0 0.5 1.0 1.5 2.0 IF(AV), AVERAGE FORWARD CURRENT (AMPS) Figure 7. Power Dissipation www.onsemi.com 4 2.5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SMB CASE 403A-03 ISSUE J SCALE 1:1 DATE 19 JUL 2012 SCALE 1:1 Polarity Band Non-Polarity Band HE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1. E b DIM A A1 b c D E HE L L1 D POLARITY INDICATOR OPTIONAL AS NEEDED A L L1 c MIN 1.95 0.05 1.96 0.15 3.30 4.06 5.21 0.76 MILLIMETERS NOM MAX 2.30 2.47 0.10 0.20 2.03 2.20 0.23 0.31 3.56 3.95 4.32 4.60 5.44 5.60 1.02 1.60 0.51 REF MIN 0.077 0.002 0.077 0.006 0.130 0.160 0.205 0.030 INCHES NOM 0.091 0.004 0.080 0.009 0.140 0.170 0.214 0.040 0.020 REF MAX 0.097 0.008 0.087 0.012 0.156 0.181 0.220 0.063 GENERIC MARKING DIAGRAM* A1 SOLDERING FOOTPRINT* 2.261 0.089 AYWW XXXXXG G AYWW XXXXXG G Polarity Band Non-Polarity Band XXXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) 2.743 0.108 *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. 2.159 0.085 SCALE 8:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98ASB42669B SMB Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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