TRIACS AC03DJM, ACO3DJM-Z, ACO3FJM, ACO3FJM-Z 3 A MOLD TRIAC DESCRIPTION The ACO3DJM and ACO3FJM are all diffused mold type TRIAC granted RMS On-state current 3 Amps, with rated voltage up to 600 volts. FEATURES @ Small and surface mount package. @ 30 A Surge Current @ Less holding current distribution provides free application design. QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. APPLICATIONS Temperature Control, Light Dimmer Control, AC Motor Speed, Control Electric Jar, Electric Lamp Starter, Various Solid State Switch, etc. PACKAGE DIMENSIONS (in millimeters) ACO3T JJM 6.540.295 2.340.2 5.0+0.2 wQ 0.5+0.1 ne he C,4yl / N N 2 EI & is - 53 le = t nS 1.3'MAX. oS 2 - = ' 7 2 ~ al[[DS MAX. _| 10.8 MAX, 2.3) 2.3 rot ot op Qo Oo oy AC03[ | JM-Z 6540.2 95 2,340.2 ve 0,540.1 5,040.2 _ |! a if avi | i 3 Ss 2 Ze: / So * 19) ce 1 2 3 oO = _. rT 2 rH | | Has N 1.3 MAX, |_-|||0.9 MAX. 0.8 MAX,| |. 10 ' oO 2.3 | 2.3 08 ty | a H Pin Connection uh 3. Gate 2. T2 4. Fin (T2) Document No. SC~2110A (0.D. No. SC~7504) Date Published February 1994 M Printed in Japan NEC Corporation 1988NEC ACO3DJM, ACO3DJM-Z, ACO3FJM, ACO3SFJM-Z ABSOLUTE MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL AC03DJM ACO3FJM UNIT NOTE Repetitive Peak Off-State Voltage Vorm 400 600 Vv Non-repetitive Peak Off-State Voltage Vosm 500 700 Vv RMS On-State Current Itiams) 3 (Tc = 110 C) A See Fig. 11 Surge On-State Current Irsm 30 (50 Hz 1 cycle) A See Fig. 2 Fusing Current J ivfdt 4.0(ims s t $ 10ms) As Peak Gate Power Dissipation Pom 3 (f 2 50 Hz, Duty s 10 %) Ww Average Gate Power Dissipation Paiav) 0.3 WwW Peak Gate Current lam +0.5 (f = 50 Hz, Duty s 10 %) A Junction Temperature Tj ~40 to +125 C Storage Temperature Tstg 55 to +150 c ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL TEST CONDITIONS MIN. | TYP. | MAX. | UNIT NOTE Peak Off-State Current lprm Vom = Vprm - - 100 UA Peak Off-State Current IpaM Ti = 125 C, Vom = Vorm - - 1 mA On-State Voltage Vim Im=5A - - 1.8 Vv See Fig. 1 Trigger Mode | T2 +, G+ - - 12 i Tz -, G+ - - - Gate-trigger - lot | Vom=12V, Ri= 302 a ~ 7] ma Fig 6, ; IV T2 +, G- - - 12 Trigger Mode | T2 +, G+ - - 1.5 ; Tz -, G+ ~ - - Gate oo 7 Ver | Vom=12V, Ri= 300 = = = Sot Fig. #6, 3 IV T2 +, G- - - 1.5 Gate Non-Trigger Voltage Vep Tj = 125 C, Vom = 1/2 Vorm 0.2 - - Vv Holding Current IH Vom =24V,lM=5A - 7 - mA of Off State Voltage dvidt | T; = 125 C, Vom = 2/8 Vor - | 100] - | wus Tj = 125 C Commutating dV/dt (dV/dt)C | (dit/dt)c = -1.6 A/ms 5 - - V/us Vom = 400 V Thermal Resistance Rthi-c) Junction to Case - - 4 C/W | See Fig. 13 Thermal Resistance Rtni-at Junction to Ambient* - - 62.5 | C/W NeOshIMe * Mounted on ceramic substrate of 7.5 cm? x 0.7 mm.NEC ACO3DJM, ACO3SDJMI-Z, ACO3FJM, ACO3FJM-Z TYPICAL CHARACTERISTICS (Ta = 25 C) Fig. 1 ir- ut CHARACTERISTIC Fig. 2 Itsm RATING 100 MAX. a y initia Ty = 125 C | Itsm < 2 O08 20 : 2 iM = 5 10 3 5 2 Oo baad Cc : : 1.0 2 ' a aod i 3 0.1 0 2.0 4.0 1 5 10 50~=s*100 vt On-State Voltage - V Cycles N Fig. 3 Ve-Ic RATING Fig. 4 Ver lar CHARACTERISTIC Ti = -40 to +125 C > i > & I @ Pem = 3W oO 8 f2 50 Hz > S Duty $10 % 5, @o co 3 F lem = 0.5 2 oO oO > I & > 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 Ie - Gate Current -A ict Gate Trigger Current -mA Fig. 5 ler - Ta TYPICAL DISTRIBUTION Fig. 6 Vet- Ta TYPICAL DISTRIBUTION 100 <t E 7 ! : mn 10 g 3 2 5 & D> D 2 = e g 1 3 5 | & Ss > 0.1 -40 -20 0 20 40 60 80 100 120 140 -40-20 0 20 40 60 80 100120140 Ta - Ambient Temperature C Ta ~ Ambient Temperature CNEC ACO03DJM, ACO3DJM-Z, ACO3FJM, ACO3FJM-Z Fig. 7 ict t TYPICAL DISTRIBUTION Fig. 8 vet-t TYPICAL DISTRIBUTION 7 000 << E 7 I + 100 2 5 5 s 2 5 5 10 3 > co <= Ee So 1 9 I g & 8 0.1 1 10 100 1 000 1 10 100 1 000 t Pulse Width us tT Pulse Width - us Fig. 9 Ih - Ta TYPICAL DISTRIBUTION = Fig. 10 Priaw Itams) CHARACTERISTIC 100 & 2 2 2 2 & 5 = 10 $ 5 3 5 a oO 2 & Ss , $ ! x= ray = va < oO 0.1 5 40 -20 0 20 40 60 80 100 z 0 1 2 3 4 5 6 a Ta - Ambient Temperature - C Itams) - RMS On-State Current - A Fig. 11 Tc Itiams) RATING Fig. 12 Ta Itiams) RATING 140 140 oO 9 s 120 1 120 | 2 5 3B 100 100 5 8 2 80 E 80 & o oO ke 60 50 a G S40 = 40 { <x fd | 20 2 20 0 1 2 3 4 5 6 0 1.0 2.0 Inams) - RMS On-State Current - A itams) - RMS On-State Current - ANEC ACO3DJM, ACO3DJM-Z, ACO3FJM, ACO3SFJM-Z Fig. 13 Zn CHARACTERISTIC 100 Junction to Ambient 10 Junction to Case (Standard) Zin Transient Thermal Impedance C/W 0.1 1 10 100 1k 10k 100 k Cycles (50 Hz) REFERENCE Document name Document No. Quality control guide of semoiconductor devices MEI-1202 Assembly manual of semiconductor devices IEI-1207NEC ACO3DJM, ACO3DJM-Z, ACO3FJM, ACO3SFJM-Z [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6