Aalitron DEVICES, INC. PRODUCT CATALOG N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS LOOV, 25A, 0.0659 SDF 150 JAA SDF1350 JAB PARAMETER SYMBOL UNITS Drain-source Volt.(1) voss 100 Vdc Drain-Gate Voltage (Res=1.0Ma) (1) VOGR 100 Vde Gate-Source Voltage Continuous VGS 20 Vde Broi : (Toe sees" Continuous ID 25 Ade Orain Current Pulsed(3) (DM 160 A Total Power Dissipation PD 150 W Power Dissipation ; 6 Derating > 25C 1.2 w7c Operating & Storage Temp. | TJ/Tsig -55 TO +150 c Thermal Resistance Rthdec 0.8 C/W Mox.Lead temperature TL 300 c ELECTRICAL CHARACTERISTICS Te =25c UNLESS OTHER- WISE SPECIFIED FEATURES @ RUGGED PACKAGE @ HI-REL CONSTRUCTION @ CERAMIC EYELETS @ LEAD BENDING OPTIONS @ COPPER CORED 52 ALLOY PINS @ LOW IR LOSSES @ LOW THERMAL RESISTANCE @ OPTIONAL MIL-S-19500 SCREENING SCHEMAT IC (D) [TERMINAL CONNECTIONS G H 1] GATE 1 | DRAIN + 2] DRAIN |2]| SOURCE (S) [3]source |3/ GATE STANDARD BEND CONFI GURAT IONS JAA (CUSTOM BEND OPTIONS AVAILABLE) PARAMETER SYMBOL| TEST CONDITIONS MINJTYP.| MAX JUNITS| Orain-source VGS=0V Breakdown Vo | + ,Y6BR)08S [D=250 yA 100) - ~ Vv Volsoge eo [vGs(TH)|VDS=Vcs 1D=250 nA [2.0] - [4.0] Vv Gate Source = _ Leakage 1IGSS |VGS=+20 V ; - 1100] nA Zero Gate VDS=MAX.RATING VGS=0| - 1250] HA Voltage Drain | IDSS |yps=0.8 MAX.RATING Current : VGS=0 TJ=125C - - |1000} HA Static Drain- VGS=10 V Source On-State|RDS(ON ~ ~ | - [.065) Resistance(1). (ON) ID=21A Forward Trans- vDS 2 50 V Conductance (2) gfs IDS=22A 3 | - - |S(v) Input Capacitance] CISS - 2000] - pF Output Capacitance] COSS eS vO ee v - |1000] pF Reverse Transfer uae _ Capacitance CRSS = {350 pF Turn-On Delay |td(on)|vop=sov _- RG=6.20 - | -.|35 | ns Rise Time tr (Mose 4 RD=2.00 - | {100/ ns Turn-Off. Delayl|td(off)| are essentially indepen- = - j{125] ns Fall Time if dent of operating temp.) [~ T100| ns Total Gate Charge Gate-Source Pius} Qg 50] - {125} nc Gate-Sou VDS-0-8'MAX-RATING [7 Gate-Source =0. : Charge Qgs (Gate charge is essent|- 8 ~ 25 | nc 7 a indepenaen o e Omi liee) Qgd operating temperature) is| - 65 | nc Charge SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc= 25C (tMLESS OTHER. PARAMETER SYMBOL. TEST CONDITIONS MIN.| TYP.iMAX. |UNITS Continuous wpe ; Source Current} 19 |Modified MOSFET -|- 25] A (Body Diode) symbol showing the integral reverse Pulse Source P-N junction recti- current (Body ISM |fier (See schematic)| - | - [160] A iode Diode Forward |F=25A, VGS=0V _ _ Voltage 2 vsD To =+25C 2.5} V Reverse = L - Recovery Time | ter jtc=*25 C 370] ns R Re- IF=25A covery Charge Orr |di/dt=100A/ WS - 13.3] - | pe STANDARD BEND CONF IGURAT TONS JAB (CUSTOM BEND OPTIONS AVAILABLE) 1) TJ = 25C to 150C 3) Repetitive Rating: 2) Pulse test: Pulse Width <300nS, Duty Cycie <2%. Pulse Width limited By Mox.junction Temperature. - REV. 10/93 Ar