DRV3204EPHPRQ1 - Texas Instruments

CTLWL

VCC

PMV2

PMV3

AREF

ALFB

ALP

ALM

ALV

VCFB

VCCB

PMV1

ENABLE

VDD

DOUT

GND PHTM

PH1M

PH2M

PH3M

RES

CTLVL

CTLUL

CTLWH

CTLVH

CTLUH

TEST

WHS

FAULT

PRN

DIN

SCK

VHS

UHS

PDCPV

CPRD4

CPRD3

CPRD2

CPRD1

NGND

10 nF

4.7 pF

30 KÖ

30 KÖ1 KÖ

1 KÖ

10 Ö

10 KÖ

30 KÖ

100 KÖ10 KÖ

10 KÖ

10 KÖ15 pF

15 pF

100 KÖ

100 nF 1 µF 100 µF

1 mÖ

100 KÖ

100 µF 100 nF

1 µF 100 nF

10 Ö

47 nF

0 Ö

100 nF

47 Ö

15 pF

2.2 µF

PNP Tr

0.51 Ö

1 µF

GND

PGND

GND

PGND

GND

BLDC

Motor

PGND

GND

PGND

Controller DRV3204E-Q1

1 µF

Product

Folder

Sample &

Buy

Technical

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Software

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An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,

intellectual property matters and other important disclaimers. PRODUCTION DATA.

DRV3204E-Q1

SLVSCB5B –OCTOBER 2013–REVISED JULY 2016

DRV3204E-Q1 Three-Phase Brushless Motor Driver

Not Recommended for New Designs

1 Features

1• Qualified for Automotive Applications

• AEC Q100 Qualified with the Following Results:

– Device Temperature Grade 0: –40°C to 150°C

Ambient Operating Temperature Range

– Device HBM ESD Classification Level H2

– Device CDM ESD Classification Level C2

• 3-Phase Pre-Drivers for N-Channel MOS Field-

Effect Transistors (MOSFETs)

• Pulse-Width Modulation (PWM) Frequency up to

20 kHz

• Fault Diagnostics

• Charge Pump

• Phase Comparators

• Microcontroller (MCU) Reset Generator

• Serial Port I/F (SPI)

• Motor-Current Sense

• 5-V Regulator

• Low-Current Sleep Mode

• Operation VB Range From 5.3 V to 26.5 V

• 48-Pin PHP

2 Applications

• Automotive Motor-Control Applications

– Oil Pump

– Fuel Pump

– Water Pump

Typical Application Schematic

3 Description

The DRV3204E-Q1 device is a field-effect transistor

(FET) pre-driver designed for three-phase motor

control for applications such as an oil pump or a

water pump. The device has three high-side pre-FET

drivers and three low-side drivers which are under the

control of an external MCU. A charge pump supplies

the power for the high side, and there is no

requirement for a bootstrap capacitor. For

commutation, this integrated circuit (IC) sends a

conditional motor signal and output to the MCU.

Diagnostics provide undervoltage, overvoltage,

overcurrent, overtemperature and power-bridge

faults. The motor current is measured using an

integrated current-sense amplifier and comparator in

a battery common-mode range, which allows the use

of the motor current in a high-side current-sense

application. External resistors set the gain. The pre-

drivers and other internal settings are configured

through the SPI.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)

DRV3204E-Q1 HTQFP (48) 7.00 mm × 7.00 mm

(1) For all available packages, see the orderable addendum at

the end of the datasheet.

Not Recommended for New Designs

DRV3204E-Q1

SLVSCB5B –OCTOBER 2013–REVISED JULY 2016

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Table of Contents

1 Features.................................................................. 1

2 Applications ........................................................... 1

3 Description............................................................. 1

4 Revision History..................................................... 2

5 Pin Configuration and Functions......................... 3

6 Specifications......................................................... 4

6.1 Absolute Maximum Ratings ...................................... 4

6.2 ESD Ratings.............................................................. 4

6.3 Thermal Information.................................................. 5

6.4 Electrical Characteristics .......................................... 5

6.5 Supply Voltage and Current...................................... 9

7 Detailed Description............................................ 13

7.1 Functional Block Diagram....................................... 13

7.2 Feature Description................................................. 13

7.3 Register Maps......................................................... 24

8 Application and Implementation ........................ 30

8.1 Typical Application.................................................. 30

9 Device and Documentation Support.................. 31

9.1 Receiving Notification of Documentation Updates.. 31

9.2 Community Resources............................................ 31

9.3 Trademarks............................................................. 31

9.4 Electrostatic Discharge Caution.............................. 31

9.5 Glossary.................................................................. 31

10 Mechanical, Packaging, and Orderable

Information........................................................... 31

4 Revision History

NOTE: Page numbers for previous revisions may differ from page numbers in the current version.

Changes from Revision A (January 2014) to Revision B Page

• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Application and

Implementation section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable

Information section ................................................................................................................................................................ 1

• Changed device status to NRND. ......................................................................................................................................... 1

Changes from Original (October 2013) to Revision A Page

• Changed the delay time symbol tvto tdin the SPI ELECTRICAL CHARACTERISTICS table .............................................. 5

• Changed the dalay time, SCK to DOUT image reference from Figure 23 to Figure 2 in the SPI ELECTRICAL

CHARACTERISTICS table..................................................................................................................................................... 5

• Changed the max value for the RONH_HP parameter from 270 to 300 in the Pre-Driver Electrical Characteristics table... 6

• Deleted the 1 from the symbols for the time parameters (ton_h, toff_h, th-on, and th-off) for the high-side pre-driver in the

Pre-Driver Electrical Characteristics table.............................................................................................................................. 6

• Changed the max for the VOL_L parameter from 50 to 60 in the Pre-Driver Electrical Characteristics table....................... 6

• Changed the max for the RONL_L parameter from 5 to 6 in the Pre-Driver Electrical Characteristics table........................ 6

• Changed the symbol for the turnoff time parameter for the low-side pre-driver from toff_h to toff_l in the Pre-Driver

Electrical Characteristics table ............................................................................................................................................... 7

• Added ADTH to the bit 6:4 description in the FLTCFG register table.................................................................................. 24

• Changed dead time description for bit 1:0 in the PDCFG register table from 2, 1.5, 1, and 0.5 to 2.1, 1.6, 1.1, and

0.6 (respectively). Also changed the actual deadtime from ±0.2 to ±0.1 ............................................................................. 28

CTLWL

VCC

CTLUL

CTLVL

CTLVH

CTLWH

TEST

PH3M

CTLUH

PH2M

AREF

ALFB

ALM

ALP

PH1M

ALV

VCFB

PMV2

PMV1

PMV3

VCCB

ENABLE

RES

PHTM

GND

VDD

PDCPV

CPDR4

VHS

DIN

SCK

CPDR1

CPDR2

WHS

FAULT

DOUT

NGND

CPDR3

PRN

UHS

13 14 15 16 17 18 19 20 21 22 23 24

48 47 46 45 44 43 42 41 40 39 38 37

Not Recommended for New Designs

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5 Pin Configuration and Functions

PHP Package

48-PIN HTQFP

Top View

Pin Functions

PIN MAXIMUM

RATING DESCRIPTION

NAME NO. TYPE

ALFB 18 O –0.3 V to 40 V Motor current-sense amplifier feedback

ALM 16 I –0.3 V to 40 V Motor current-sense amplifier negative input

ALP 17 I –0.3 V to 40 V Motor current-sense amplifier positive input

ALV 15 O –0.3 V to 6 V Motor current-sense amplifier output

AREF 19 O –0.3 V to 40 V Reference output of motor current- sense amplifier

CPDR1 47 O –0.3 V to 40 V Charge-pump output

CPDR2 46 O –0.3 V to 40 V Charge-pump output

CPDR3 45 O –0.3 V to 40 V Charge-pump output

CPDR4 44 O –0.3 V to 40 V Charge-pump output

CS 32 I –0.3 V to 6 V SPI chip select

CTLUH 3 I –0.3 V to 6 V Pre-driver parallel input

CTLUL 9 I –0.3 V to 6 V Pre-driver parallel input

CTLVH 4 I –0.3 V to 6 V Pre-driver parallel input

CTLVL 10 I –0.3 V to 6 V Pre-driver parallel input

CTLWH 5 I –0.3 V to 6 V Pre-driver parallel input

CTLWL 11 I –0.3 V to 6 V Pre-driver parallel input

DIN 34 I –0.3 V to 6 V SPI data input

DOUT 30 O –0.3 V to 6 V SPI data output

Not Recommended for New Designs

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SLVSCB5B –OCTOBER 2013–REVISED JULY 2016

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Pin Functions (continued)

PIN MAXIMUM

RATING DESCRIPTION

NAME NO. TYPE

ENABLE 23 I –0.3 V to 40 V Enable input

FAULT 36 O –0.3 V to 6 V Diagnosis output

GND 29 I –0.3 V to 0.3 V GND

NGND 48 I –0.3 V to 0.3 V Power GND

PDCPV 43 O –0.3 V to 40 V Charge pump output

PH1M 27 I –1 V to 40 V Phase comparator input

PH2M 26 I –1 V to 40 V Phase comparator input

PH3M 25 I –1 V to 40 V Phase comparator input

PHTM 28 I –1 V to 40 V Phase comparator reference input

PMV1 22 O –0.3 V to 6 V Phase comparator output

PMV2 21 O –0.3 V to 6 V Phase comparator output

PMV3 20 O –0.3 V to 6 V Phase comparator output

PRN 35 I –0.3 V to 6 V Watchdog timer-pulse input

RES 24 O –0.3 V to 6 V MCU reset output

SCK 33 I –0.3 V to 6 V SPI clock

TEST 2 I –0.3 V to 20 V TEST input

UH 42 O –5 V to 40 V Pre-driver output

UHS 41 O –5 V to 40 V Pre-driver reference

UL 6 O –0.3 V to 20 V Pre-driver output

VB 1 I –0.3 V to 40 V VB input

VCC 12 I –0.3 V to 6 V VCC supply input

VCCB 13 O –0.3 V to 40 V VCC regulator base driver of PNP external transistor

VCFB 14 I –0.3 V to 40 V VCC regulator current-sense input

VDD 31 O –0.3 V to 3.6 V VDD supply output

VH 40 O –5 V to 40 V Pre-driver output

VHS 39 O –5 V to 40 V Pre-driver reference

VL 7 O –0.3 V to 20 V Pre-driver output

WH 38 O –5 V to 40 V Pre-driver output

WHS 37 O –5 V to 40 V Pre-driver reference

WL 8 O –0.3 V to 20 V Pre-driver output

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted) MIN MAX UNIT

TAOperating temperature range –40 150 ºC

TJJunction temperature –40 175 ºC

Tstg Storage temperature -55 175 ºC

(1) Performance of ESD testing is according to the ACE-Q100 standard.

6.2 ESD Ratings VALUE UNIT

V(ESD) Electrostatic discharge(1) Human-body model (HBM) ±2000 V

Charged-device model (CDM) ±500

Not Recommended for New Designs

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(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

6.3 Thermal Information

THERMAL METRIC(1) DRV3204E-Q1

UNITPHP (HTQFP)

48 PINS

θJA Junction-to-ambient thermal resistance 26.1 °C/W

θJCtop Junction-to-case (top) thermal resistance 11.5 °C/W

θJB Junction-to-board thermal resistance 7.2 °C/W

ψJT Junction-to-top characterization parameter 0.2 °C/W

ψJB Junction-to-board characterization parameter 7.1 °C/W

θJCbot Junction-to-case (bottom) thermal resistance 0.4 °C/W

(1) The timing parameters are invalid if watch dog timer is disabled.

(2) Specified by design.

6.4 Electrical Characteristics

VB = 12 V, TA= –40°C to 150℃(unless otherwise specified)(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

WATCHDOG

VSTN(2) Function start VCC voltage

RES

See Figure 1

0.8 1.3 V

tON (2) Power-on time RES 2.5 3 3.5 ms

tOFF (2) Clock-off reset time RES 64 80 96 ms

tRL (2) Reset-pulse low time RES 16 20 24 ms

tRH (2) Reset-pulse high time RES 64 80 96 ms

tRES (2) Reset delay time RES 30 71.5 90 µs

Pwth (2) Pulse duration PRN 2 µs

SPI

fop SPI clock frequency 4 MHz

tlead (2) Enable lead time 200 ns

twait (2) Wait time between two

successive communications 5 µs

tlag (2) Enable lag time 100 ns

tpw (2) SCLK pulse duration 100 ns

tsu (2) Data setup time 100 ns

th(2) Data hold time 100 ns

tdis (2) Data-output disable time 200 ns

ten (2) Data-output enable time 100 ns

td(2) Data delay time, SCK to DOUT CL= 50 pF, see Figure 2. 0 100 ns

Not Recommended for New Designs

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Electrical Characteristics (continued)

VB = 12 V, TA= –40°C to 150℃(unless otherwise specified)(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

CHARGE PUMP

Vchv1_0 Output voltage, PDCPV VB = 5.3 V, Iload = 0 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 7 VB + 8 V

Vchv1_1 Output voltage, PDCPV VB = 5.3 V, Ioad = 5 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 5.5 VB + 6.5 V

Vchv1_2 Output voltage, PDCPV VB = 5.3 V, Ioad = 8 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 4.5 VB + 5.5 V

Vchv2_0 Output voltage, PDCPV VB = 12 V, Ioad = 0 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 10 VB + 12 VB + 14 V

Vchv2_1 Output voltage, PDCPV VB = 12 V, Ioad = 11 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 9.5 VB + 11.5 VB +

13.5 V

Vchv2_2 Output voltage, PDCPV VB = 12 V, Ioad = 18 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 9 VB + 11 VB + 13 V

Vchv3_0 Output voltage, PDCPV VB = 18 V, Ioad = 0 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 10 VB + 12 VB + 14 V

Vchv3_1 Output voltage, PDCPV VB = 18 V, Ioad = 13 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 10 VB + 12 VB + 14 V

Vchv3_2 Output voltage, PDCPV VB = 18 V, Ioad = 22 mA, C1 = C2 = 47 nF,

CCP = 2.2 µF, R1 = R2 = 0 ΩVB + 10 VB + 12 VB + 14 V

VchvOV Overvoltage detection threshold 35 37.5 40 V

VchvUV Undervoltage detection

threshold VB + 4 VB + 4.5 VB + 5 V

tchv (2) Rise time VB = 5.3 V, C1 = C2 = 47 nF, CCP = 2.2

µF,

R1=R2=0Ω, Vchv, UV released 1 2 ms

Ron On-resistance, S1-S4 See Figure 10 8Ω

HIGH-SIDE PRE-DRIVER

VOH_H Output voltage, turnon side Isink = 10 mA, PDCPV - xH 1.35 2.7 V

VOL_H Output voltage, turnoff side Isource = 10 mA, xH - xHS 25 50 mV

RONH_HP On-resistance, turnon side

(Pch) U(V/W)H = PDCPV - 1 V 135 300 Ω

RONH_HN On-resistance, turnon side

(Nch) U(V/W)H = PDCPV - 2.5 V 4 8 Ω

RONL_H On-resistance turnoff side 2.5 5 Ω

ton_h (2) Turnon time CL= 12 nF, RL= 0 Ωfrom 20% to 80% 50 200 ns

toff_h (2) Turnoff time CL= 12 nF, RL= 0 Ωfrom 80% to 20% 50 200 ns

th-ondly (2) Output delay time CL= 12 nF, RL= 0 Ωto 20%, no dead time 200 ns

th-offdly (2) Output delay time CL= 12 nF, RL= 0 Ωto 80%, no dead time 200 ns

VGS_hs Gate-source high -side voltage

difference xH-xHS –0.3 18 V

LOW-SIDE PRE-DRIVER

VOH_L1 Output voltage, turnon side VB = 12 V, Isink = 10 mA, xL - NGND 10 12 14 V

VOH_L2 Output voltage, turnon side VB = 5.3 V, Isink = 10 mA, xL - NGND 5.5 7.5 10 V

VOL_L Output voltage, turnoff side Isource = 10 mA, xL - NGND 25 60 mV

RONH_L On-resistance, turnon side 6 12 Ω

RONL_L On-resistance, turnoff side 2.5 6 Ω

ton_l (2) Turnon time CL= 18 nF, RL= 0 Ω, from 20% to 80% of

12 V,

from 20% to 80% of 6 V (VB = 5.3 V) 50 200 ns

Not Recommended for New Designs

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Electrical Characteristics (continued)

VB = 12 V, TA= –40°C to 150℃(unless otherwise specified)(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

toff_l (2) Turnoff time CL= 18 nF, RL= 0 Ω, from 80% to 20% of

12 V,

from 80% to 20% of 6 V (VB = 5.3 V) 50 200 ns

tl-ondly (2) Output delay time CL= 18 nF, RL= 0 Ω, to 20% of 12 V,

to 20% of VOH = 6 V (VB = 5.3 V), no dead

time 200 ns

tl-offdly (2) Output delay time CL= 18 nF, RL= 0 Ω, to 80% of 12 V,

to 80% of VOH = 6 V (VB = 5.3 V), no dead

time 200 ns

tdiff1 (2) Differential time1 (Th-on) - (Tl-off), no dead time, See

Figure 3 –200 0 200 ns

tdiff2 (2) Differential time2 (Tl-on) - (Tl-off), no dead time, See Figure 3 –200 0 200 ns

tdead (2) Dead time OSC1 = 10 MHz SPI register

PDCFG.DEADT

1.5

0.5

2.2

1.7

1.2

0.7

µs

PHASE COMPARTOR

Viofs Input offset voltage –15 15 mV

Vinm Input voltage range, PHTM 1.3 4.5 V

Vinp Input voltage range, PHxM –1 VB V

Vhys Threshold hysteresis voltage SPI register SPARE. SEL_COMP_HYS

0mV12.5 25 50

25 50 100

50 100 200

VOH Output high voltage Isink = 2.5 mA 0.9 ×

VCC V

VOL Output low voltage Isource = 2.5 mA 0.1 ×

VCC V

tres_tr (2) Response time, rising CL= 100 pF 0.7 1.5 µs

tres_tf (2) Response time, falling CL= 100 pF 0.7 1.5 µs

MOTOR CURRENT SENSE

VOfs Input offset voltage –5 5 mV

VO_0 Output voltage, ALV Imotor = 0 A, SPI register CSCFG.

CSOFFSET

0.5

1.5

2.5

VLine Linearity, ALV Rshunt = 1 mΩ,

R11 = R12 = 1 kΩ,

R21 = R22 = 30 kΩ

29.4 30 30.6 mV/A

VGain Gain 10 30 V/V

Tset_TR1(2) Settling time (rise), ALV ±1% Rshunt = 1 mΩ, VGain = 30, CL= 100 pF,

Imotor = 0 A →30 A,

(ALV: 1 V →1.9 V, AREF = 1 V) 1 2.5 µs

Tset_TR2(2) Settling time(rise), ALV ±1% Rshunt = 1 mΩ, VGain = 30, CL= 100 pF,

Imotor = 0 A →100 A,

(ALV: 1 V →4 V, AREF = 1 V) 1 2.5 µs

Tset_TF1(2) Settling time(fall), ALV ±1% Rshunt = 1 mΩ, VGain = 30, CL= 100 pF,

Imotor = 30 A→0,

(ALV: 1.9 V →1 V, AREF = 1 V) 1 2.5 µs

Tset_TF2(2) Settling time(fall), ALV ±1% Rshunt = 1 mΩ, VGain = 30, CL= 100 pF,

Imotor = 100 A→0,

(ALV: 0.4 V →1 V, AREF = 1 V) 1 2.5 µs

Not Recommended for New Designs

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Electrical Characteristics (continued)

VB = 12 V, TA= –40°C to 150℃(unless otherwise specified)(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

(3) No variation of the external components.

OVADth Overcurrent threshold

Rshunt = 1 mΩ, VGain = 30, AREF = 1 V,

ADTH = 2.5 V, SPI register FLTCFG.

MTOCTH,

OVADth = (2 × ADTH - AREF) / (Rshunt ×

VGain)

119.7 133 146.3 A

TDEL_OVA

D(2) Propagation delay

(rise or fall) 1.5 µs

tfiltMTOC filtering time OSC1 = 9 MHz-11 MHz 0.8 1 1.2 µs

VCC

VCC1 Output Voltage 4.9 5 5.1 V

VCC2 Output Voltage VB = 4.5 V, ILVCC = 5 mA - 150 mA 4.25 4.5 V

IBVCC Base Current 1.5 mA

hfePNP DC current gain of external

PNP 100

VLRVCC Load regulation ILVCC = 5 mA - 150 mA –20 20 mV

CVCC External Capacitance 22 100 µF

RVCC ESR of external Capacitor 300 mΩ

VCCUV Under voltage detection

threshold SPI register FLTCFG. VCCUVTH 3.7

3.9 4

4.2 4.3

4.5 V

VCCUVHY

SUnder voltage detection

threshold hysteresis 50 100 200 mV

VCCOV Overvoltage detection threshold 6 6.5 7 V

VCCOC Current Limit Rsns = 0.51 Ω, 0.2 V ⋍Rsns(3), VCCOC 300 400 550 mA

Tvcc1(2) Rise Time VCC > VCCUV, CVCC = 22 µF 0.5 ms

Tvcc2(2) Rise Time VCC > VCCUV, CVCC = 100 µF 1.5 ms

VDD

VDD Output Voltage 3 3.3 3.6 V

CVDD Load Capacitance 1 µF

VDDUV Under voltage detection

threshold 2.1 2.3 2.5 V

VDDOV Overvoltage detection threshold 4 4.3 4.6 V

Tvdd(2) Rise Time VDD > VDDUV, CVDD = 1 µF 100 µs

VB MONITOR

VBOV VB overvoltage detection

threshold level 26.5 27.5 28.5 V

VBOVhys(2) VB overvoltage detection

hysteresis 0.2 0.5 1.2 V

VBUV VB Undervoltage detection

threshold level SPI register FLTCFG. VBUVTH

3.65

4.15

4.65

5.15

4.5

5.5

4.35

4.85

5.35

5.85

VBUVhys(2) VB Undervoltage detection

hysteresis SPI register FLTCFG. VBUVTH

0.1

0.2

0.3

0.25

0.4

0.5

0.65

0.5

0.8

1.0

1.3

THERMAL SHUT DOWN

TSD(2) Thermal shut down threshold

level 155 175 195 °C

TSDhys(2) Thermal shut down hysteresis 5 10 15 °C

Not Recommended for New Designs

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Electrical Characteristics (continued)

VB = 12 V, TA= –40°C to 150℃(unless otherwise specified)(1)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

OSCILLATOR

OSC1 OSC1 frequency 9 10 11 MHz

OSC2 OSC2 frequency 10 MHz

INPUT BUFFER1

VIH Input threshold logic high 0.7 ×

VCC V

VIL Input threshold logic low 0.3 ×

VCC V

Ru or Rd Input pullup or pulldown

resistance 50 100 150 kΩ

OUTPUT BUFFER1(2)

VOH Output level logic high Isink = 2.5 mA 0.9 ×

VCC V

VOL Output level logic low Isource = 2.5 mA 0.1 ×

VCC V

OUTPUT BUFFER3

R_RES Pullup Resistor 2 3 4 kΩ

VOL Output level logic low Isource = 2 mA 0.1 ×

VCC V

(1) Performance of supply voltage 5.3 V to 18 V is according to the ACE-Q100 (Grade 0) standard.

(2) Specified by design.

6.5 Supply Voltage and Current

VB = 12 V, TA= –40°C to 150°C (unless otherwise specified)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

SUPPLY INPUT

VB1(1) VB supply voltage (motor operation) 5.3 12 18 V

VB2(1) VB supply voltage (MCU operation) 4.5 12 18 V

VB3(2) VB supply voltage 18 26.5 V

Ivb VB operating current ENABLE = High, no PWM 18 27 mA

Ivbq VB quiescent current ENABLE = Low 50 100 µA

SCK

MSB D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 LSBDIN

DOUT

HiZ HiZ

MSB D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 LSB

tlead

tpw

tsu

ten tdel tdis

tlag

ttwaitt

VCC VCCUV

RES

PRN

tRES

VSTN

VDDUV

VDD

tRH tRES

tON tRL

Rising edge of PRN is

detected to reset

watchdog timer.

tOFF

tON tON

Pwth

Not Recommended for New Designs

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NOTE: VCC undervoltage condition sets RES = Low.

Figure 1. Watchdog Timing Chart

Figure 2. SPI Timing Diagram

VCC

VO_0

VLine

=´Y/´X

Imotor0A

´X

´Y

ADTH

Imotor0A OVAD

ALFB/2ALV

CTLUL

CTLVL

CTLWL

CTLUH

CTLVH

CTLWH

th-offdly

tdead + th-ondly

tl-offdly tdead + tl-ondly

th-off(th-offdly + toff_h)

CTLUL

CTLVL

CTLWL

xHS

80%

20%

80%

20%

80%

20% 80%

20% NGND

CTLUH

CTLVH

CTLWH

th-ondly th-offdly

th-on(th-ondly + ton_h)

tl-ondly

tl-on(tl-ondly + ton_l)

tl-offdly

tl-off(tl-offdly + toff_l)

Not Recommended for New Designs

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NOTE: This diagram excludes dead time to explain the timing parameters of the pre-driver.

Figure 3. Delay Time From Input to Output

Figure 4. Dead Time

Figure 5. Motor-Current Sense and Overcurrent

Sleep

VCC

VDD

Band Gap

Charge Pump

Enable

VIH VIL

Device Active Sleep

Motor Current

MTOC SPI Register Flag

SPI Access read write 1

to clear

FAULT

Pre-Driver Enable Disable Enable

OVAD

OVADth

tfiltMTOC

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(1) MCU must set the FLTCFG.FLGLATCH_EN bit to 1 to get the latch-type operation shown in Figure 6.

(2) When MTOC condition is detected, FAULT is asserted to low if FE_MTOC bit is 1.

(3) When MTOC condition is detected, Pre Driver is disabled if SE_MTOC is 1.

Figure 6. Motor Overcurrent Event

Figure 7. I/O ENABLE Timing Chart

OSC

47 46 45 44 43 42 41 40 39 38 37

13 14 15 16 17 18 19 20 21 22 23 24

Charge Pump

SCK

DOUT

GND

PHTM

VDD

VCC

PMV2

PMV3

PH1M

NGND

PDCPV

CPRD1

CPRD2

CPRD3

CPRD4

Monitor

Control Logic

PH2M

RES

VCC

PMV1

VMS

AMP

5V Reg

3.3V Reg

OVAD

ALV

AREF

ALFB

ALM

ALP

TEST

(OPEN)

TEST I/F

AMP

COMP

ADTH

ENABLE

VCC

UHS

VHS

WHS

PDCPV

FAULT

PRN

DIN

PH3M WHS

VHS

UHS

VCOM

COMP

VCFB

VCCB

VCFB

VCC

CTLWL

CTLVL

CTLUL

CTLWH

CTLVH

CTLUH

NGND

VCP12

VCP12 TSD

SLEEP

VCC

UHS

VHS

WHS

Battery

VMS

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7 Detailed Description

7.1 Functional Block Diagram

7.2 Feature Description

7.2.1 Watchdog

A watchdog monitors the PRN signal and VCC supply level and generates a reset to the MCU via the RES pin if

the status of PRN is not normal or VCC is lower than the specified threshold level. Detection of a special pattern

on the PRN input during power up can disable the watchdog.

DIN

SCK

SPI Control Logic and

8-Bit Shift Register 8-Bit Shift Register

DOUT

System Clock

Enable

Address Write Data Read Data

Status

Clock

Monitor

Watch Dog Timer

WDT

Digital Pattern

Detection

Reset

Logic

PRN

RES

VCC

VDD

OSC1

3k

VCC

WDT

Enable

Max 100pF

To MCU

100k

VCC

From MCU

VCC Under Voltage

Detection

VDD Under Voltage

Detection

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Feature Description (continued)

Figure 8. Watchdog Block Diagram

7.2.2 Serial Port I/F

The device configuration is set and the diagnostic information read-out ocurrs through SPI. SPI operates in slave

mode. SPI uses four signals according as shown in the timing diagram of Figure 2.

Figure 9. Block Diagram of SPI

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Feature Description (continued)

7.2.2.1 CS - Chip Select

The MCU uses CS to select the IC. CS is normally high, and communication is possible only when CS is forced

low. When CS falls, communication between this IC and the MCU starts. The transmitted data are latched and

the DOUT output pin comes out of high impedance. When CS rises, communication stops. The DOUT output pin

goes into high impedance. The next falling edge starts another communication. There is a minimum waiting time

between two communications (twait). The pin has an internal pullup.

7.2.2.2 SCK - Synchronization Serial Clock

The MCU uses SCK to synchronize communication. SCK is normally low, and the valid clock-pulse number is 16.

At each falling edge, the MCU writes a new bit on the DIN input, and the IC writes a new bit on the DOUT output

pin. At each rising edge, the IC reads the new bit on DIN, and the MCU reads the new bit on DOUT. The

maximum clock frequency is 4 MHz. The pin has an internal pulldown.

7.2.2.3 DIN - Serial Input Data

DIN receives 16-bit data. The order of received bits is from the MSB (first) to the LSB (last). The pin has an

internal pulldown. Update of the internal register with the received bits occurs only if the number of clock pulses

is 16 while CS is low.

7.2.2.4 DOUT - Serial Output Data

DOUT transmits 16-bit data. DOUT is a three-state output, and is in the high-impedance state when CS is high.

The order of serial data-bit transmission is from the MSB (first) to the LSB (last).

CCP

VF VF

PDCPV

CPDR4

CPDR3

CP Logic

CPDR1

CPDR2

NGND

CP12

MAX

CP Supervisor

PDCPV

CPCLK

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Feature Description (continued)

7.2.3 Charge Pump

The charge-pump block generates a supply for the high-side and low-side pre-drivers to maintain the gate

voltage on the external FETs. Use of an external storage capacitor (CCP) and bucket capacitors (C1, C2)

supports pre-driver slope and switching-frequency requirements. R1 and R2 can reduce switching current if

required. The charge pump has voltage-supervisor functions such as overvoltage and undervoltage, and

selectable stop conditions for pre-drivers.

Figure 10. Charge-Pump Block Diagram

CTLxH

H : PU on

L : PD on

UHS/

VHS/

WHS

UH/V

H/WH

High Side Pre Driver

UL/VL

/WL

PD CTRL

PDCPV

CTLxL

H : PU on

L : PD on

NGND

Low Side Pre Driver

PD CTRL

PDCPV

LVS

VCP12

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Feature Description (continued)

7.2.4 Pre-Driver

The pre-driver block provides three high-side pre-drivers and three low-side pre-drivers to drive external N-

channel MOSFETs. The turnon side of the high-side pre-drivers supplies the large N-channel transistor current

for quick charge, and PMOS supports output voltages up to PDCPV. The turnoff side of the high-side pre-drivers

supplies the large N-channel transistor current for quick discharge. The low-side pre-drivers supply the large N-

channel transistor current for charge and discharge. VCP12 (created by a charge pump) controls the output

voltage of the low-side pre-driver to output less than 18 V. The pre-driver has a stop condition in some fault

conditions ( Fault Detection ) and SPI set ( Serial Port I/F ).

Figure 11. Pre-Driver Block Diagram

+PMV1

PMV2

PMV3

PHTM

PH1M

PH2M

PH3M

UHS,

VHS,

WHS

VCC

Clamp

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Feature Description (continued)

7.2.5 Phase Comparator

The three-channel comparator module monitors the external FETs by detecting the drain-source voltage across

the high-side and low-side FETs. PHTM is the threshold level of the comparators usable for sensorless

communication. Figure 12 shows an example of the threshold level.

Figure 12. Phase Comparator Block Diagram

Battery

R11

ALM

ALP

ALFB

R12

R22

ALV

OVAD

VCC

CLAMP

1/2ALFB

Imotor

*R11, R12, R21, R22 z 0.1%

*VGain

X10: R11 = R12 = 3 k, R21 = R22 = 30 k

X20: R11 = R12 = 1.5 k, R21 = R22 = 30 k

X30: R11 = R12 = 1 k, R21 = R22 = 30 k

*C1 = 0~10 pF

*C2 = 10 nF

*AREF: 0.5/1.0/1.5/2.0/2.5 V (SPI)

*ADTH: 2.0/2.5/3.0/3.5/4.0 V (SPI)

*ALV = VGain * (Rshunt * Imotor) + AREF

*OVADth = (2 * ADTH - AREF) / (Rshunt * VGain)

Rshunt

AREF

VCC

CLAMP

R21

CLAMP

ADTH

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Feature Description (continued)

7.2.6 Motor-Current Sense

The operational amplifier operates with an external resistor network for higher flexibility to adjust the current

measurement to application requirements. The first-stage amplifier is operating with the external resistor and the

output voltage up to VB at ALFB. The gain of amplifier is adjustable by external resistors from ×10 to ×30. The

second-stage amplifier is buffer to MCU at ALV. Current sense has comparator for motor overcurrent (OVAD).

ADTH is the overcurrent threshold level and set value by SPI. Figure 13 shows the curve of detection level.

ALFB is divided by 2 and compare this value with ADTH. In the recommended application, zero-point adjustment

is required as large error offset in initial condition.

Figure 13. Motor Current-Sense Block Diagram

CVDD

VDD

AMP

Superviser

-CVCC

VCC

AMP

Superviser

Current

Limit

VCFB

VCCB

Rsns

PNP Tr

* 0.2VáRsns*VCCOC

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Feature Description (continued)

7.2.7 Regulators

The regulator block offers a 5-V LDO and a 3.3-V LDO. The VCC LDO regulates VB down to 5 V with an

external PNP controlled by the regulator block. The 5 V is supplied to MCU and other components.

The VDD regulator regulates VB down to 3.3 V with internal FET and controller. The 5-V LDO is protected

against short to GND fault. Overvoltage and under voltage events of both supplies are detected. The under

voltage of the 5-V LDO is set by SPI.

Figure 14. VCC Block Diagram (External Driver)

Figure 15. VDD Block Diagram

TSD

IPTAT

VREF

VB VB_OV

VB_UV

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Feature Description (continued)

7.2.8 VB Monitor

The VB monitoring system has two comparators for undervoltage and overvoltage, and has pre-driver stop

controlling system respectively. Overvoltage provides pre-driver stop condition selectable (SPI control). On the

other hand, under voltage must stop pre-driver operation under detection (non-selectable). System should return

to normal operation automatically after undetected level.

Figure 16. VB Monitor Block Diagram

7.2.9 Thermal Shutdown

The device has temperature sensors that produce pre-driver stop condition if the chip temperature exceeds

175°C (typical).

Figure 17. Thermal Shutdown Block Diagram

VDD VCC

Level Shift

VCC

FAULT

VCC VDD

Level Shift

VDD

DIN

SCK

CTLxx

TEST

VCC VDD

Level Shift

VDD

PRN

VCC

V5INT

ENABLE

CLAMP V5INT

VREF

OSC1(OSC2)

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Feature Description (continued)

7.2.10 Oscillator

The oscillator block generates two 10-MHZ clock signals. OSC1 is the primary clock used for internal logic

synchronization and timing control. OSC2 is the secondary clock used to monitor the status of OSC1.

Figure 18. Oscillator Block Diagram

7.2.11 I/O

* V5INT is the internal power supply.

Figure 19. Input Buffer1 Block Diagram

Figure 20. Output Buffer1 Block Diagram

VDD VCC

RES

Level Shift

VCC

R_RES

VCC

VDD VCC

Level Shift

VCC

DOUT

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Feature Description (continued)

Figure 21. Output Buffer2 Block Diagram

Figure 22. Output Buffer3 Block Diagram

Table 1. Recommended Pin Termination

PIN NAME DESCRIPTION TERMINATION

TEST Test mode input OPEN

(1) Pre-driver is disabled if the conditions occur and SDNEN register bits are 1.

(2) FAULT pin is asserted to low if the conditions occur and FLTEN register bits are 1.

(3) Pre-driver is disabled by VCC undervoltage and VDD undervoltage conditions regardless of SPI register setting.

7.2.12 Fault Detection

Table 2. Fault Detection

ITEMS SPI FLTFLG Pre Driver(1) FAULT(2) RES Others

VB - Overvoltage VBOV Disable L H

VB - Undervoltage VBUV Disable L H

CP - Overvoltage CPOV Disable L H

CP - Undervoltage CPUV Disable L H

VCC - Overvoltage VCCOV Disable L H

VCC - Under Voltage - Disable(3) H L

VCC - Overcurrent VCCOC Disable L H

Motor - Overcurrent MTOC Disable L H

VDD - Overvoltage VDDOV Disable L H

VDD - Undervoltage - Disable(3) H L

Thermal shutdown TSD Disable L H

Watch Dog - - H L

Clock Monitor - - H L

SPI format error - - H H SPI serial out error bit

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7.3 Register Maps

7.3.1 Register Descriptions

Access type: R = Read and W = Write.

Reserved register: Read of reserved bits return 0 and write has no effect.

Table 3. CFGUNLK (Address 0x01): Configuration Unlock Register

Bit Name Type Reset Description

3:0 CFGUNLK RW 0000 DRV3204E-Q1 SPI register map has lock and unlock mode, and it is in lock mode by default.

MCU can write values of the following registers in unlock mode;

●FLTCFG

●FLTEN0 and FLTEN1

●SDNEN0 and SDNEN1

●CSCFG

●PDCFG

●WDCFG

In lock mode, read returns the values, but writing the registers have no effect.

Device enters unlock mode by writing 0x5, 0x8, 0x7 to CFGUNLK register in series. Device exits

from unlock mode by writing 0x0.

Table 4. FLTCFG (Address 0x02): Fault Detection Configuration Register

Bit Name Type Reset Description

7 FLGLATCH_EN RW 0 Fault-flag (FLTFLG*) latch enable

0: Fault events do not latch fault-flag register bits.

1: Latching of fault-flag register bits by the fault events occurs. The flag bits remain asserted until

cleared.

6:4 MTOCTH RW 000 Motor overcurrent detection threshold (ADTH)

000: 2 V

001: 2.5 V

010: 3 V

011: 3.5 V

100: 4 V

Others: 2 V

3 RSVD R 0 Reserved

2 VCCUVTH RW 0 VCC undervoltage detection threshold

0: 4 V

1: 4.2 V

1:0 VBUVTH RW 00 VB undervoltage detection threshold

00: 4 V

01: 4.5 V

10: 5 V

11: 5.5 V

Table 5. FLTEN0 (Address 0x04): FAULT Pin Enable Register 0

Bit Name Type Reset Description

7 FE_MTOC RW 1 FAULT pin enable of FLTFLG0 register bits.

0: Assertion of the FAULT pin does not occur when the fault flag bit is 1

1: Assertion of the FAULT pin to low level occurs when the fault flag bit is 1. See Figure 23

6 FE_VCCOC RW 1

5 FE_VCCOV RW 1

4 FE_VDDOV RW 1

3 FE_CPOV RW 1

2 FE_CPUV RW 1

1 FE_VBOV RW 1

0 FE_VBUV RW 1

TSD

FE_TSD

VBUV

FE_VBUV

VBOV

FE_VBOV

CPUV

FE_CPUV

CPOV

FE_CPOV

VDDOV

FE_VDDOV

VCCOV

FE_VCCOV

VCCOC

FE_VCCOC

MTOC

FE_MTOC

FAULT

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Table 6. FLTEN1 (Address 0x05): FAULT Pin Enable Register 1

Bit Name Type Reset Description

7:1 RSVD R 0000 000 Reserved

0 FE_TSD RW 1 FAULT pin enable of TSD flag bit

0: Assertion of the FAULT pin does not occur when the fault flag bit is 1

1: Assertion of the FAULT pin to low level occurs when the TSD flag bit is 1. See Figure 23

Figure 23. FAULT Pin Enable Logic

Table 7. SDNEN0 (Address 0x06): Pre-Driver Shutdown Enable Register 0

Bit Name Type Reset Description

7 SE_MTOC RW 1 Pre-driver shutdown enable of FLTFLG0 register bits

0: Disabling of the pre-driver outputs does not occur when the fault flag bit is 1.

1: Disabling of the pre-driver outputs occurs when the fault flag bit is 1. Both the high-side

and low-side FETs turn off.

See Figure 24.

6 SE_VCCOC RW 1

5 SE_VCCOV RW 1

4 SE_VDDOV RW 1

3 SE_CPOV RW 1

2 SE_CPUV RW 1

1 SE_VBOV RW 1

0 SE_VBUV RW 1

Table 8. SDNEN1 (Address 0x07): Pre-Driver Shutdown Enable Register 1

Bit Name Type Reset Description

7:1 RSVD R 0000 000 Reserved

0 SE_TSD RW 1 Pre-driver shutdown enable of TSD flag bits

0: Disabling of the pre-driver outputs does not occur when the TSD flag bit is 1.

1: Disabling of the pre-driver outputs occurs when the TSD flag bit is 1. Both the high-side and

low-side FETs turn off.

See Figure 24.

TSD

SE_TSD

VBUV

SE_VBUV

VBOV

SE_VBOV

CPUV

SE_CPUV

CPOV

SE_CPOV

VDDOV

SE_VDDOV

VCCOV

SE_VCCOV

VCCOC

SE_VCCOC

MTOC

SE_MTOC

Pre-driver

control

enable

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(1) R: Read, W: Write

(2) Assertion of the fault flags may occur during power up.

Figure 24. Pre-Driver Shutdown Logic

Table 9. FLTFLG0 (Address 0x08): Fault Flag Register 0

Bit Name Type(1) Reset Description

Fault flag bits of the following conditions;(2)

7 MTOC RW 0 MTOC: Motor overcurrent. (OVAD)

6 VCCOC RW 0 VCCOC: VCC overcurrent

5 VCCOV RW 0 VCCOV: VCC overvoltage

4 VDDOV RW 0 VDDOV: VDD overvoltage

3 CPOV RW 0 CPOV: Charge-pump overvoltage

2 CPUV RW 0 CPUV: Charge-pump undervoltage

1 VBOV RW 0 VBOV: VB overvoltage

0 VBUV RW 0 VBUV: VB undervoltage

If FLTCFG.FLGLATCH_EN = 1

0: Read = No fault condition exists since last cleared.

Write = No effect

1: Read = Fault condition exists.

Write = Clear the flag.

If FLTCFG.FLGLATCH_EN = 0

0: Read = No fault condition

Write = No effect

1: Read = Fault condition

Write = No effect

Status

FLGLATCH_EN 0 1

Fault Fault

Read Write 1

to cClear

FLTFLG

SPI Access

to FLTFLG

FAULT(1) LH

DisableEnablePre-Driver(2)

FLTFLG*

Status N FLTFLG*

Status N+1

SCK

Fault Event Status N Status N+1

SPI Read Buffer Status N Status N+1

SPI DOUT

Serial Output Format Serial Output Format

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(1) R: Read, W: Write

(2) Assertion of the fault flags may occur during power up.

Table 10. FLGFLT1 (Address 0x09): Fault Flag Register 1

Bit Name Type(1) Reset Description

7:1 RSVD R 0000 000 Reserved

0 VBUV RW 1 Fault flag bit of thermal shutdown condition.(2)

If FLTCFG.FLGLATCH_EN = 1

0: Read = No fault condition exists since last cleared.

Write = No effect

1: Read = Fault condition exists.

Write = Clear the flag

If FLTCFG.FLGLATCH_EN = 0

0: Read = No fault condition

Write = No effect

1: Read = Fault condition

Write = No effect

Figure 25. SPI Data-Out Timing Chart of Fault Flag Registers

(1) Assertion of FAULT occurs if FLTEN = 1.

(2) Disabling of pre-driveroccurs if SDNEN = 1.

Figure 26. FLGFLG and FLGLATCH_EN

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(1) R: Read W: Write

Table 11. CSCFG (Address 0x0A): Current Sense Configuration Register

Bit Name Type(1) Reset Description

7:3 RSVD R 0000 0 Reserved

2:0 CSOFFSET RW 000 Current-sense offset

000: 0.5 V

001: 1 V

010: 1.5 V

011: 2 V

100: 2.5 V

Others: 0.5 V

(1) R: Read W: Write

Table 12. PDCFG (Address 0x0B): Pre-Driver Configuration Register

Bit Name Type(1) Reset Description

7:2 RSVD R 0000 00 Reserved

1:0 DEADT RW 00 Dead time (= tdead)

00: 2.1 µs

01: 1.6 µs

10: 1.1 µs

11: 0.6 µs

The actual dead time has ±0.1 µs variation from the typical value.

Table 13. DIAG (Address 0x0C): Diagnosis Register

Bit Name Type Reset Description

7:3 RSVD R 0000 0 Reserved

2 VCCUVRST R 0 nRES reset source information

1 WDTRST R 0 Bit 2 = VCCUVRST - VCC undervoltage

0 CMRST R 0 Bit 1 = WDTRST - watchdog timer

Bit 0 = CMRST - clock monitor

0: Read = Reset has not occurred.

Write = No effect

1: Read = A corresponding reset source caused the last reset condition.

Write = No effect

Read access to this register clears the bits.

(1) R: Read W: Write

Table 14. SPARE (Address 0x0D): Spare Register

Bit Name Type(1) Reset Description

7:2 SPARE RW 0000 00 Spare registers for future use. Read and write have no effect.

1:0 SEL_COMP_HYS RW 00 Select phase comparator hysteresis voltage. The following show the typical values.

MM 00: 0 V

MM 01: 25 mV

MM 10: 50 mV

MM 11: 100 mV

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Table 15. SPI Serial Input Format

MSB D14 D13 D12 D11 D10 D9 D8

DIN RW[1] RW[0] Addr[5] Addr[4] Addr[3] Addr[2] Addr[1] Addr[0]

D7 D6 D5 D4 D3 D2 D1 LSB

DIN Data[7] Data[6] Data[5] Data[4] Data[3] Data[2] Data[1] Data[0]

Table 16. SPI Serial Output Data Format

MSB D14 D13 D12 D11 D10 D9 D8

DOUT 0 Frame fault 0 0 0 0 0 1

D7 D6 D5 D4 D3 D2 D1 LSB

DOUT Data[7] Data[6] Data[5] Data[4] Data[3] Data[2] Data[1] Data[0]

SPI serial input and output format

RW[1:0] : 01: write mode; 00: read mode

Addr[5:0] : Address of SPI access

Data[7:0] : Input data to write or output data to read

Frame fault : 0: No error exists in the previous SPI frame.

: 1: Error exists in the previous SPI frame.

Table 17. SPI Register Map

Name Addr

(Hex) b7 b6 b5 b4 b3 b2 b1 b0 Reset

(Hex)

Reserved 00 RSVD 00

CFGUNLK 01 RSVD CFGUNLK 00

FLTCFG 02 FLGLATCH_EN MTOCTH RSVD VCCUVTH VBUVTH 00

Reserved 03 RSVD 00

FLTEN0 04 FE_MTOC FE_VCCOC FE_VCCOV FE_VDDOV FE_CPOV FE_CPUV FE_VBOV FE_VBUV FF

FLTEN1 05 RSVD FE_TSD 01

SDNEN0 06 SE_MTOC SE_VCCOC SE_VCCOV SE_VDDOV SE_CPOV SE_CPUV SE_VBOV SE_VBUV FF

SDNEN1 07 RSVD SE_TSD 01

FLTFLG0 08 MTOC VCCOC VCCOV VDDOV CPOV CPUV VBOV VBUV 00

FLTFLG1 09 RSVD TSD 00

CSCFG 0A RSVD CSOFFSET 00

PDCFG 0B RSVD DEADT 00

DIAG 0C RSVD VCCUVRST WDTRST CMRST 00

SPARE 0D SPARE SEL_COMP_HYS 00

Reserved 0E-3F RSVD 00

CTLWL

VCC

PMV2

PMV3

AREF

ALFB

ALP

ALM

ALV

VCFB

VCCB

PMV1

ENABLE

VDD

DOUT

GND PHTM

PH1M

PH2M

PH3M

RES

CTLVL

CTLUL

CTLWH

CTLVH

CTLUH

TEST

WHS

FAULT

PRN

DIN

SCK

VHS

UHS

PDCPV

CPRD4

CPRD3

CPRD2

CPRD1

NGND

10 nF

4.7 pF

30 KÖ

30 KÖ1 KÖ

1 KÖ

10 Ö

10 KÖ

30 KÖ

100 KÖ10 KÖ

10 KÖ

10 KÖ15 pF

15 pF

100 KÖ

100 nF 1 µF 100 µF

1 mÖ

100 KÖ

100 µF 100 nF

1 µF 100 nF

10 Ö

47 nF

0 Ö

100 nF

47 Ö

15 pF

2.2 µF

PNP Tr

0.51 Ö

1 µF

GND

PGND

GND

PGND

GND

BLDC

Motor

PGND

GND

PGND

Controller DRV3204E-Q1

1 µF

Not Recommended for New Designs

DRV3204E-Q1

SLVSCB5B –OCTOBER 2013–REVISED JULY 2016

www.ti.com

Product Folder Links: DRV3204E-Q1

8 Application and Implementation

NOTE

Information in the following applications sections is not part of the TI component

specification, and TI does not warrant its accuracy or completeness. TI’s customers are

responsible for determining suitability of components for their purposes. Customers should

validate and test their design implementation to confirm system functionality.

8.1 Typical Application

Figure 27. Typical Application Schematic

Not Recommended for New Designs

DRV3204E-Q1

www.ti.com

SLVSCB5B –OCTOBER 2013–REVISED JULY 2016

Product Folder Links: DRV3204E-Q1

9 Device and Documentation Support

9.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper

right corner, click on Alert me to register and receive a weekly digest of any product information that has

changed. For change details, review the revision history included in any revised document.

9.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective

contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of

Use.

TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration

among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help

solve problems with fellow engineers.

Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and

contact information for technical support.

9.3 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

9.4 Electrostatic Discharge Caution

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

9.5 Glossary

SLYZ022 —TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.

10 Mechanical, Packaging, and Orderable Information

The following pages include mechanical, packaging, and orderable information. This information is the most

current data available for the designated devices. This data is subject to change without notice and revision of

this document. For browser-based versions of this data sheet, refer to the left-hand navigation.

PACKAGE OPTION ADDENDUM

www.ti.com 27-Jun-2016

Addendum-Page 1

PACKAGING INFORMATION

Orderable Device Status

(1)

Package Type Package

Drawing Pins Package

Qty Eco Plan

(2)

Lead/Ball Finish

(6)

MSL Peak Temp

(3)

Op Temp (°C) Device Marking

(4/5)

Samples

DRV3204EPHPQ1 NRND HTQFP PHP 48 250 Green (RoHS

& no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 150 DRV3204E

DRV3204EPHPRQ1 NRND HTQFP PHP 48 1000 Green (RoHS

& no Sb/Br) CU NIPDAU Level-3-260C-168 HR -40 to 150 DRV3204E

(1) The marketing status values are defined as follows:

ACTIVE: Product device recommended for new designs.

LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.

NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.

PREVIEW: Device has been announced but is not in production. Samples may or may not be available.

OBSOLETE: TI has discontinued the production of the device.

(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability

information and additional product content details.

TBD: The Pb-Free/Green conversion plan has not been defined.

Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that

lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.

Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between

the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.

Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight

in homogeneous material)

(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.

(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.

(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation

of the previous line and the two combined represent the entire Device Marking for that device.

(6) Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish

value exceeds the maximum column width.

Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information

provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and

continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.

TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.

PACKAGE OPTION ADDENDUM

www.ti.com 27-Jun-2016

Addendum-Page 2

In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.

IMPORTANT NOTICE

Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other

changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest

issue. Buyers should obtain the latest relevant information before placing orders and should verify that such information is current and

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TI warrants performance of its components to the specifications applicable at the time of sale, in accordance with the warranty in TI’s terms

and conditions of sale of semiconductor products. Testing and other quality control techniques are used to the extent TI deems necessary

to support this warranty. Except where mandated by applicable law, testing of all parameters of each component is not necessarily

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TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and

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Click to View Pricing, Inventory, Delivery & Lifecycle Information:

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DRV3204EPHPRQ1 DRV3204EPHPQ1