FSF450R4 - Intersil Corporation - Datasheet.Directory

3-119

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

June 1998

FSF450D, FSF450R

9A, 500V, 0.600 Ohm, Rad Hard,

SEGR Resistant, N-Channel Power MOSFETs

Features

• 9A, 500V, rDS(ON) = 0.600Ω

• Total Dose

- Meets Pre-RAD Speciﬁcations to 100K RAD (Si)

• Single Event

- Safe Operating Area Curve for Single Event Effects

- SEE Immunity for LET of 36MeV/mg/cm2 with

VDS up to 80% of Rated Breakdown and

VGS of 10V Off-Bias

• Dose Rate

- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS

- Typically Survives 2E12 if Current Limited to IDM

• Photo Current

- 30nA Per-RAD(Si)/s Typically

• Neutron

- Maintain Pre-RAD Speciﬁcations

for 3E12 Neutrons/cm2

- Usable to 3E13 Neutrons/cm2

Formerly available as type TA17659.

Description

The Discrete Products Operation of Intersil Corporation has

de v eloped a series of Radiation Hardened MOSFETs specif-

ically designed for commercial and military space applica-

tions. Enhanced Power MOSFET immunity to Single Event

Eff ects (SEE), Single Ev ent Gate Rupture (SEGR) in particu-

lar, is combined with 100K RADS of total dose hardness to

provide devices which are ideally suited to harsh space envi-

ronments. The dose rate and neutron tolerance necessary

for military applications have not been sacriﬁced.

The Intersil portfolio of SEGR resistant radiation hardened

MOSFETs includes N-Channel and P-Channel devices in a

variety of voltage, current and on-resistance ratings.

umerous packaging options are also available.

This MOSFET is an enhancement-mode silicon-gate power

ﬁeld-effect transistor of the vertical DMOS (VDMOS) struc-

ture. It is specially designed and processed to be radiation

tolerant. The MOSFET is well suited for applications

e xposed to radiation environments such as switching regula-

tion, switching converters, motor drives, relay drivers and

drivers for high-power bipolar switching transistors requiring

high speed and low gate drive power. This type can be

operated directly from integrated circuits.

Reliability screening is available as either commercial, TXV

equivalent of MIL-S-19500, or Space equivalent of

MIL-S-19500. Contact Intersil for any desired deviations

from the data sheet.

Symbol

Package

TO-254AA

Ordering Information

RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND

10K Commercial FSF450D1

10K TXV FSF450D3

100K Commercial FSF450R1

100K TXV FSF450R3

100K Space FSF450R4

CAUTION: Beryllia Warning per MIL-S-19500

refer to package speciﬁcations.

File Number 3970.3

3-120

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

FSF450D, FSF450R UNITS

Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V

Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V

Continuous Drain Current

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID9A

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID6A

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 27 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation

TC = 25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT125 W

TC = 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT50 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.00 W/oC

Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . IAS 27 A

Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS9A

Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 27 A

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TJ, TSTG -55 to 150 oC

Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

(Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause per manent damage to the device. This is a stress only rating and operation

of the device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 500 - - V

Gate Threshold Voltage VGS(TH) VGS = VDS,

ID = 1mA TC = -55oC - - 5.0 V

TC = 25oC 1.5 - 4.0 V

TC = 125oC 0.5 - - V

Zero Gate Voltage Drain Current IDSS VDS = 400V,

VGS = 0V TC = 25oC--25µA

TC = 125oC - - 250 µA

Gate to Source Leakage Current IGSS VGS = ±20V TC = 25oC - - 100 nA

TC = 125oC 200 nA

Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 9A 5.67 V

Drain to Source On Resistance rDS(ON)12 ID =6A,

VGS = 12V TC = 25oC - 0.425 0.600 Ω

TC = 125oC - - 1.20 Ω

Turn-On Delay Time td(ON) VDD = 250V, ID =9A,

RL = 27.8Ω, VGS = 12V,

RGS = 2.35Ω

- - 150 ns

Rise Time tr- - 140 ns

Turn-Off Delay Time td(OFF) - - 180 ns

Fall Time tf- - 70 ns

Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 250V,

ID =9A - - 220 nC

Gate Charge at 12V Qg(12) VGS = 0V to 12V - 110 150 nC

Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 8.2 nC

Gate Charge Source Qgs -2128nC

Gate Charge Drain Qgd -4962nC

Plateau Voltage V(PLATEAU) ID = 9A, VDS = 15V - 7 - V

Input Capacitance CISS VDS = 25V, VGS = 0V,

f = 1MHz - 3150 - pF

Output Capacitance COSS - 540 - pF

Reverse Transfer Capacitance CRSS - 150 - pF

Thermal Resistance Junction to Case RθJC - - 1.00 oC/W

Thermal Resistance Junction to Ambient RθJA --48

oC/W

FSF450D, FSF450R

3-121

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Forward Voltage VSD ISD = 9A 0.6 - 1.8 V

Reverse Recovery Time trr ISD = 9A, dISD/dt = 100A/µs - - 810 ns

Electrical Speciﬁcations up to 100K RAD TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS

Drain to Source Breakdown Volts (Note 3) BVDSS VGS = 0, ID = 1mA 500 - V

Gate to Source Threshold Volts (Note 3) VGS(TH) VGS = VDS, ID = 1mA 1.5 4.0 V

Gate to Body Leakage (Notes 2, 3) IGSS VGS = ±20V, VDS = 0V - 100 nA

Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = 400V - 25 µA

Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = 12V, ID = 9A - 5.67 V

Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = 12V, ID = 6A - 0.600 Ω

NOTES:

1. Pulse test, 300µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) Note 4

TEST SYMBOL

ENVIRONMENT (NOTE 5) APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

ION

SPECIES TYPICAL LET

(MeV/mg/cm) TYPICAL

RANGE (µ)

Single Event Effects Safe Operating

Area SEESOA Ni 26 43 -15 500

Ni 26 43 -20 450

Br 37 36 -5 500

Br 37 36 -10 400

Br 37 36 -15 100

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO IAS

00 -10 -15 -20 -25

-5 VGS (V)

VDS (V)

LET = 37MeV/mg/cm2, RANGE = 36µ

300

200

100

LET = 26MeV/mg/cm2, RANGE = 43µ

400

500

600 FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

30010010

LIMITING INDUCTANCE (HENRY)

DRAIN SUPPLY (V)

1000

ILM = 10A

300A

1E-4

1E-5

1E-6

100A

30A

1E-7

1E-3

FSF450D, FSF450R

3-122

FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs

TEMPERATURE FIGURE 4. FORWARD BIAS SAFE OPERATING AREA

FIGURE 5. BASIC GATE CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE

FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

ID, DRAIN (A)

TC, CASE TEMPERATURE (oC) 150

100

500-50

VDS, DRAIN TO SOURCE VOLTAGE (V)

ID, DRAIN CURRENT (A)

100

1 10 100

0.1 1000

OPERATION IN THIS

AREA MAY BE

LIMITED BY rDS(ON)

100µs

1ms

10ms

100ms

TC = 25oC

CHARGE

QGD

QGS

12V

2.5

2.0

1.5

1.0

0.5

0.0 -80 -40 0 40 80 120 160

NORMALIZED rDS(ON)

TJ, JUNCTION TEMPERATURE (oC)

PULSE DURATION = 250µs, VGS = 12V, ID = 6A

NORMALIZED

0.1

0.01

10-5 10-4 10-3 10-2 10-1 100101

t, RECTANGULAR PULSE DURATION (s)

THERMAL RESPONSE (ZθJC)

0.001

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

0.5

NOTES:

DUTY FACTOR: D = t1/t2

PEAK TJ = PDM x ZθJC + TC

PDM

FSF450D, FSF450R

3-123

FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING

Test Circuits and Waveforms

FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS

FIGURE 11. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 12. RESISTIVE SWITCHING WAVEFORMS

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

100

0.01 0.1 1 10

tAV, TIME IN AVALANCHE (ms)

IAS, AVALANCHE CURRENT (A)

0.1 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1]

IF R ≠ 0

tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)

IF R = 0

STARTING TJ = 25oC

STARTING TJ = 150oC

VGS ≤ 20V

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

50Ω

50V-150V

IAS

ELECTRONIC SWITCH OPENS

WHEN IAS IS REACHED

CURRENT

TRANSFORMER

VDD

VDS

BVDSS

IAS

tAV

VDS

DUT

RGS

VGS = 12V

VDD

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%50%

10% PULSE WIDTH

VGS

tON

FSF450D, FSF450R

3-124

Screening Information

Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table).

Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA

Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value ±25 (Note 7) µA

Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID±20% (Note 8) Ω

Gate Threshold Voltage VGS(TH) ID = 1.0mA ±20% (Note 8) V

NOTES:

7. Or 100% of Initial Reading (whichever is greater).

8. Of Initial Reading.

Screening Information

TEST JANTXV EQUIVALENT JANS EQUIVALENT

Gate Stress VGS = 30V, t = 250µsV

GS = 30V, t = 250µs

Pind Optional Required

Pre Burn-In Tests (Note 9) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A,

Subgroup 2 (All Static Tests at 25oC)

Steady State Gate

Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B

VGS = 80% of Rated Value,

TA = 150oC, Time = 48 hours

MIL-STD-750, Method 1042, Condition B

VGS = 80% of Rated Value,

TA = 150oC, Time = 48 hours

Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests

and Limits Table All Delta Parameters Listed in the Delta Tests

and Limits Table

Steady State Reverse

Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A

VDS = 80% of Rated Value,

TA = 150oC, Time = 160 hours

MIL-STD-750, Method 1042, Condition A

VDS = 80% of Rated Value,

TA = 150oC, Time = 240 hours

PDA 10% 5%

Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A,

Subgroups 2 and 3

NOTE:

9. Test limits are identical pre and post burn-in.

Additional Screening Tests

PARAMETER SYMBOL TEST CONDITIONS MAX UNITS

Safe Operating Area SOA VDS = 200V, t = 10ms 0.90 A

Unclamped Inductive Switching IAS VGS(PEAK) = 15V, L = 0.1mH 27 A

Thermal Response ∆VSD tH = 100ms; VH = 25V; IH = 4A 136 mV

Thermal Impedance ∆VSD tH = 500ms; VH = 25V; IH = 4A 187 mV

FSF450D, FSF450R

3-125

Rad Hard Data Packages - Intersil Power Transistors

TXV Equivalent

1. Rad Hard TXV Equivalent - Standard Data Package

A. Certiﬁcate of Compliance

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

D. Group A - Attributes Data Sheet

E. Group B - Attributes Data Sheet

F. Group C - Attributes Data Sheet

G. Group D - Attributes Data Sheet

2. Rad Hard TXV Equivalent - Optional Data Package

A. Certiﬁcate of Compliance

B. Assembly Flow Chart

C. Preconditioning - Attributes Data Sheet

- Precondition Lot Traveler

- Pre and Post Burn-In Read and Record

Data

D. Group A - Attributes Data Sheet

- Group A Lot Traveler

E. Group B - Attributes Data Sheet

- Group B Lot Traveler

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup B3)

- Bond Strength Data (Subgroup B3)

- Pre and P ost High Temperature Operating

Life Read and Record Data (Subg roup B6)

F. Group C - Attributes Data Sheet

- Group C Lot Traveler

- Pre and Post Read and Record Data for

Intermittent Operating Life (Subgroup C6)

- Bond Strength Data (Subgroup C6)

G. Group D - Attributes Data Sheet

- Group D Lot Traveler

- Pre and Post RAD Read and Record Data

Class S - Equivalents

1. Rad Hard “S” Equivalent - Standard Data Package

A. Certiﬁcate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

E. Preconditioning Attributes Data Sheet

Hi-Rel Lot Traveler

HTRB - Hi Temp Gate Stress Post Rev erse

Bias Data and Delta Data

HTRB - Hi Temp Drain Stress P ost Rev erse

Bias Delta Data

F. Group A - Attributes Data Sheet

G. Group B - Attributes Data Sheet

H. Group C - Attributes Data Sheet

I. Group D - Attributes Data Sheet

2. Rad Hard Max. “S” Equivalent - Optional Data Package

A. Certiﬁcate of Compliance

B. Serialization Records

C. Assembly Flow Chart

D. SEM Photos and Report

E. Preconditioning - Attributes Data Sheet

- Hi-Rel Lot Traveler

- HTRB - Hi Temp Gate Stress Post

Reverse Bias Data and Delta Data

- HTRB - Hi Temp Drain Stress Post

Reverse Bias Delta Data

- X-Ray and X-Ray Report

F. Group A - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups A2, A3, A4, A5 and A7 Data

G. Group B - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups B1, B3, B4, B5 and B6 Data

H. Group C - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Subgroups C1, C2, C3 and C6 Data

I. Group D - Attributes Data Sheet

- Hi-Rel Lot Traveler

- Pre and Post Radiation Data

FSF450D, FSF450R

3-126

All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certiﬁcation.

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or speciﬁcations at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information fur nished by Intersil is believed to be accurate

and reliable . Howe ver, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which

may result from its use. No license is granted b y implication or otherwise under an y patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see web site http://www.intersil.com

Sales Ofﬁce Headquarters

NORTH AMERICA

Intersil Corporation

P. O. Box 883, Mail Stop 53-204

Melbourne, FL 32902

TEL: (407) 724-7000

FAX: (407) 724-7240

EUROPE

Intersil SA

Mercure Center

100, Rue de la Fusee

1130 Brussels, Belgium

TEL: (32) 2.724.2111

FAX: (32) 2.724.22.05

ASIA

Intersil (Taiwan) Ltd.

Taiwan Limited

7F-6, No. 101 Fu Hsing North Road

Taipei, Taiwan

Republic of China

TEL: (886) 2 2716 9310

FAX: (886) 2 2715 3029

FSF450D, FSF450R

TO-254AA

3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE

QH1

EØP

Øb

0.065 R MAX.

TYP.

123

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.249 0.260 6.33 6.60 -

A10.040 0.050 1.02 1.27 -

Øb 0.035 0.045 0.89 1.14 2, 3

D 0.790 0.800 20.07 20.32 -

E 0.535 0.545 13.59 13.84 -

e 0.150 TYP 3.81 TYP 4

e1 0.300 BSC 7.62 BSC 4

H10.245 0.265 6.23 6.73 -

J10.140 0.160 3.56 4.06 4

L 0.520 0.560 13.21 14.22 -

ØP 0.139 0.149 3.54 3.78 -

Q 0.110 0.130 2.80 3.30 -

NOTES:

1. These dimensions are within allow able dimensions of Re v. A of

JEDEC outline TO-254AA dated 11-86.

2. Add typically 0.002 inches (0.05mm) for solder coating.

3. Lead dimension (without solder).

4. Position of lead to be measured 0.250 inches (6.35mm) from bot-

tom of dimension D.

5. Die to base BeO isolated, terminals to case ceramic isolated.

6. Controlling dimension: Inch.

7. Revision 1 dated 1-93.

WARNING!

BERYLLIA WARNING PER MIL-S-19500

Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical

operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound

shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’

compounds.